D5B TRANSISTOR Search Results
D5B TRANSISTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
TPCP8514 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
D5B TRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 0Q247fll D5b B A P X Philips Semiconductors N AUER PHILIPS/DISCRETE NPN 3 GHz wideband transistor DESCRIPTION Product specification b?E ]> S BFG17A PINNING NPN wideband transistor in a microminiature plastic S O U 43 surface mounting envelope with double emitter bonding. |
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0Q247fll BFG17A OT143. | |
transistor smd zG
Abstract: npn smd zg smd transistor 513 BFG17 BFG17A smd jpS SMD transistor ZG
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BFG17A OT143. transistor smd zG npn smd zg smd transistor 513 BFG17 BFG17A smd jpS SMD transistor ZG | |
M61527FP
Abstract: INR10 jedec QFP80 D17b
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M61527FP REJ03F0036-0100Z -99dB/ 0/-6/-12/-18dB) M61527FP INR10 jedec QFP80 D17b | |
c2021 transistor
Abstract: transistor c2551 potentiometer 1k D9B diode VHC541 C2021 D9B TRANSISTOR OP209 NPN transistor 2n2222A C2551
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AN7852 10-Bit SPT7852 SPT7852 EB7852 1N5712 2N2222A OP291 LTC1152 c2021 transistor transistor c2551 potentiometer 1k D9B diode VHC541 C2021 D9B TRANSISTOR OP209 NPN transistor 2n2222A C2551 | |
transistor D9C
Abstract: D9C transistor inr234
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M61531FP REJ03F0050-0100Z transistor D9C D9C transistor inr234 | |
D9D TRANSISTOR
Abstract: BEST BASS TREBLE CIRCUIT capacitor 4.7u M61531FP D19c D15C D14D D19D
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M61531FP REJ03F0050-0110Z D9D TRANSISTOR BEST BASS TREBLE CIRCUIT capacitor 4.7u M61531FP D19c D15C D14D D19D | |
Contextual Info: MC10E167, MC100E167 5V ECL 6-Bit 2:1 MUX-Register The MC10E/100E167 contains six 2:1 multiplexers followed by D flip-flops with single-ended outputs. Input data are selected by the Select control, SEL. The selected data are transferred to the flip-flop outputs by a positive edge on CLK1 or CLK2 or both . A HIGH on |
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MC10E167, MC100E167 MC10E/100E167 AND8020 AN1404 AN1405 AN1406 AN1503 AN1504 AN1568 | |
Contextual Info: • 1^53=131 QDESSSti 283 H A P X Philips Semiconductors Product specification ANER PHILIPS /DISC RE TE b?E NPN 1 GHz wideband transistor DESCRIPTION BFS17 e PINNING NPN transistor In a plastic SOT23 envelope. It is intended for a wide range of RF applications, such as mixers and |
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BFS17 MEA393 MEA397 | |
D17C
Abstract: transistor D9C D19c D12B D20B D21B transistor D4C D17B D13C D13B
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M61527FP -99dB/1dBstep 0/-6/-12/-18dB) INL10 INR10 D17C transistor D9C D19c D12B D20B D21B transistor D4C D17B D13C D13B | |
Contextual Info: m u m ex KS621K40 Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S ítig lB D U rH n Q tO fl Transistor Module 400 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power |
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KS621K40 Amperes/1000 72T4b21 | |
Contextual Info: SIEMENS BUZ 50 C SIPMOS Power Transistor • N channel • Enhancement mode Type Yds b flDS on Package Ordering Code BUZ 50 C 1000 V 2.3 A 6Q TO-220 AB C67078-A1307-A5 Maximum Ratings Parameter Symbol Drain source voltage Vt)S Drain-gate voltage ^DGR Values |
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O-220 C67078-A1307-A5 bridJJ40 235b05 fl235bG5 | |
MC100E167
Abstract: 100E167 MC100E167FN MC100E167FNR2 MC10E167 MC10E167FN MC10E167FNR2
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MC10E167, MC100E167 MC10E/100E167 MC10E167FN r14525 MC10E167/D MC100E167 100E167 MC100E167FN MC100E167FNR2 MC10E167 MC10E167FN MC10E167FNR2 | |
Contextual Info: 7#. / = ^ 7 S G S - T H O M S O N M » ilL liC T M ] ( g § _ S D 1565 RF & MICROWAVE TRANSISTORS _UHF PULSED APPLICATIONS . 500 WATTS @ 250|iSec PULSE WIDTH, 10% DUTY CYCLE . REFRACTORY GOLD METALLIZATION > EMITTER BALLASTING AND LOW |
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SD1565 SD1565 | |
MC100E167
Abstract: MC10E167 MC10E167FN d5b transistor
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MC10E167, MC100E167 MC10E/100E167 MC10E167/D MC100E167 MC10E167 MC10E167FN d5b transistor | |
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2n2 j100
Abstract: u107 TRANSISTOR c104 AD607 AD712 AD812 AD9066 AD9066AR AD9066JR ADSP-21062
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28-Pin AD9066 AD9066 C2019 28-Lead 2n2 j100 u107 TRANSISTOR c104 AD607 AD712 AD812 AD9066AR AD9066JR ADSP-21062 | |
2n2 j100
Abstract: 2N2866 AD607 BR107 U108
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28-Pin AD9066 AD9066 28-Lead C2019 2n2 j100 2N2866 AD607 BR107 U108 | |
SGSF664
Abstract: NPN Transistor 450v 1A 100khz 5v transistor npn 6AN1 NPN Transistor 1A metal switching
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SGSF664 50kHz 7T5T237 SGSF664 NPN Transistor 450v 1A 100khz 5v transistor npn 6AN1 NPN Transistor 1A metal switching | |
mr 4030
Abstract: MC100E167 MC10E167 MC10E167FN
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MC10E167, MC100E167 MC10E/100E167 MC10E167/D mr 4030 MC100E167 MC10E167 MC10E167FN | |
D9D TRANSISTOR
Abstract: M61540FP d11c diode D14D diode d15c
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M61540FP REJ03F0117-0100Z M61540FP 99dB/1dBstep, D9D TRANSISTOR d11c diode D14D diode d15c | |
d5b transistorContextual Info: HCD-5B Product Details Military/Ae rospace High Pe rform an ce Re lays Previous 1 . [16] 17 18 19 20 Next Not EU RoHS or ELV Compliant Quick Links Check Pricing & Availability Search for Tooling Product Feature Selector Compare Products Contact Us About This Product |
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500Hz d5b transistor | |
Contextual Info: a FEATURES Two Matched ADCs on Single Chip CMOS-Compatible I/O Low-Power 400 mW Dissipation Single +5 V Supply On-Chip Voltage Reference Self-Biased for AC-Coupled Inputs 28-Lead SOIC and SSOP Packages APPLICATIONS Direct Broadcast Satellite (DBS) Receivers |
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28-Lead AD9066 C2019â RS-28) | |
Contextual Info: HSD-5B Product Details Military/Ae rospace High Pe rform an ce Re lays Previous 1 . [16] 17 18 19 20 Next Not EU RoHS or ELV Compliant Quick Links Check Pricing & Availability Search for Tooling Product Feature Selector Compare Products Contact Us About This Product |
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d11c diode
Abstract: M61527FP
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Contextual Info: MC10E155, MC100E155 5V ECL 6−Bit 2:1 Mux−Latch The MC10E/100E155 contains six 2:1 multiplexers followed by transparent latches with single−ended outputs. When both Latch Enables LEN1, LEN2 are LOW, the latch is transparent, and output data is controlled by the multiplexer select control, SEL. A logic |
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MC10E155, MC100E155 MC10E/100E155 AND8020 AN1404 AN1405 AN1406 AN1503 AN1504 AN1568 |