D54 MARKING Search Results

TRANSISTOR D54

Abstract: d54 marking TRANSISTOR B54
Contextual Info: NPN medium power transistor Die no. D-54 These are epitaxial planar NPN silicon transistors. Dimensions Units : mm MPT3 Features available in a MPT3 (MPT, SOT-89) package, see page 300 I1.5( — TY ‘ 0.1 collector-to-emitter breakdown voltage, BVCE0 = 80 V (min) at

Contextual Info: Die no. D-54 NPN medium power transistor These are epitaxial planar NPN silicon transistors. Dimensions Units : mm M PT3 Features available in a MPT3 (MPT, SOT-89) package, see page 300 4 . 5 —o ) I l .6 ± 0 .l 1 .5 -0 .1 ~ ,m collector-to-emitter breakdown

d54 marking

Abstract: MARKING D53 SOT23 marking D53 PT-200 2SD780A hFE CLASSIFICATION Marking
Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxia 2SD780A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High DC current gain. hFE: 200TYP. VCE=1.0V,IC=50mA . 1 0.55 Micro package. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SD780/2SD780A TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation W (Tamb=25℃) 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9

MARKING D53 SOT23

Contextual Info: IC SMD Type Product specification 2SD780A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High DC current gain. hFE: 200TYP. VCE=1.0V,IC=50mA . 1 0.55 Micro package. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

transistor D55

Abstract: 2SD780 d54 marking 2SD780A marking D53 2SD78 TRANSISTOR D54 D51 marking
Contextual Info: 2SD780/2SD780A SOT-23-3L 2SD780/2SD780A TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation W (Tamb=25℃) 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9 Collector current ICM: 0.3 A Collector-base voltage 60 V 2SD780 V(BR)CBO: 80

SOT89 MARKING CODE

Abstract: RXT-A14 RXT-A28 RXTA28 marking DG sot89 marking code C37 marking a38 marking code B25 sot-89 marking code DH RXT-A76
Contextual Info: U.S. European Type Series MPT SOT-89 IPackage style and dimensions (Unit : mm) M PT Pac ka ge Recommendable copper plate area dimension on printed circuit board (U.S.A. SOT-89) 1.6±0.1 h— 1 - m nn Dimensions \ |p . 4 ± 0 . 1 iTdîo, (1) Bass (2) Collector

Darlington pair IC

Abstract: marking cb b54 marking MPT3 MARKING DF ad marking diagram
Contextual Info: Transistors For Medium Power Amplification Part No. Package SST3 SMT3 SSTA56 MMSTA56 BV cbO BVceO BVebo Min. Min. M in. 80V I I 80V , 4V Ic b o @Vcb . ^ @IC & VCE VUE 8aÖ Mm. Max. Max. Max. , 100nA 80V , . 100 10mA 1V 100 100mA 1V & VM (Sat Max. 0.25V

d54 marking

Abstract: sot-89 marking code DH marking DG sot89 marking t101 marking CB RXT3906
Contextual Info: U.S. European Type Series MPT SOT-89 IPackage style and dimensions (Unit : mm) MPT Recommendable copper plate area dimension on printed circuit board (U.S.A. SOT-89) - r p Dimensions \ : 1/ 0 . 4 ± 0 . i j l , 0 - 5^ ,0 - 1] |p . 4 ± Q . I 1.5 + 0 . 1.

D70 SOT23

Abstract: D46 diode dual zener MARKING D53 SOT23 marking D58 AZ23C3V0 d54 marking marking code d47 MARKING D53 PART NUMBER MARKING d45
Contextual Info: AZ23-V-G-Series Vishay Semiconductors Small Signal Zener Diodes, Dual Features • Dual silicon planar Zener diodes, common anode • The Zener voltages are graded according to the international E 24 standard • The parameters are valid for both diodes in one case. ΔVZ and ΔRzj of the two

Contextual Info: PNP medium power transistor Die no. B-54 These are epitaxial planar PNP silicon transistors. Features • available in a MPT3 MPT, SOT-89 package, see page 300 • collector-to-emitter breakdown voltage, BVCEO = 80 V (min) at lc = 1 mA • • Dimensions (Units : mm)

transistor b54

Abstract: b54 marking
Contextual Info: PNP medium power transistor Die no. B-54 Dimensions Units : mm These are epitaxial planar PNP silicon transistors. MPT3 Features • • • available in a MPT3 (MPT, SOT-89) package, see page 300 1.6 ± 0 .1 -m collector-to-emitter breakdown voltage, BVCEO = 80 V (min) at

AZ23B3V9-V-G

Abstract: D70 SOT23 D50 SOT23
Contextual Info: AZ23-V-G-Series Vishay Semiconductors Small Signal Zener Diodes, Dual Features • Dual silicon planar Zener diodes, common anode • The Zener voltages are graded according to the international E 24 standard • The parameters are valid for both diodes in one case. ΔVZ and ΔRzj of the two

D55 SOT 23-5

Abstract: D70 SOT23 MARKING D53 SOT23 D56 SOT23 AZ23B3V9-V-G D61 SOT-23 marking D58 marking D63 D45 SOT23 AZ23C6V2-V-G
Contextual Info: AZ23-V-G-Series Vishay Semiconductors Small Signal Zener Diodes, Dual Features • Dual silicon planar Zener diodes, common anode • The Zener voltages are graded according to the international E 24 standard • The parameters are valid for both diodes in one case. ΔVZ and ΔRzj of the two

MARKING 43 SOT23 6 pin

Abstract: PACDN044Y5R sc70 package dimensions D44 SOT23 D44 SOT23 6pin micro USB B 5pin
Contextual Info: PACDN042/43/44/45/46 Transient Voltage Suppressors / ESD Protectors Features Product Description • The PACDN042/43/44/45/46 family of transient voltage suppressor arrays provide a very high level of protection for sensitive electronic components which may be

marking D63

Contextual Info: AZ23-V-G-Series Vishay Semiconductors Small Signal Zener Diodes, Dual Features • Dual silicon planar Zener diodes, common anode • The Zener voltages are graded according to the international E 24 standard • The parameters are valid for both diodes in one case. ΔVZ and ΔRzj of the two

Contextual Info: Data sheet acquired from Harris Semiconductor SCHS286A − October 2003 The CD74AC623 is supplied in 20-lead dual-in-line plastic packages E suffix and in 20-lead small-outline packages (M, M96, and NSR suffixes). The CD74ACT623 is supplied in 20-lead small-outline

w41 transistor

Abstract: TRANSISTOR D206 w64 transistor transistor w32 MARKING W63
Contextual Info: LCD Segment Drivers Multi- function LCD Segment Drivers BU97510CKV-M MAX 216 Segment 54SEGx4COM General Description Key Specifications The BU97510CKV-M is 1/4 or 1/3-Duty general-purpose LCD driver that can be used for frequency display in electronic tuners under the control of a microcontroller.

marking code d47

Abstract: marking D63 D61 SOT-23
Contextual Info: AZ23-V-G-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes, Dual FEATURES • Dual silicon planar Zener diodes, common anode 1 2 • The Zener voltages are graded according to the international E 24 standard • The parameters are valid for both diodes in one

AZ23B3V9-V-G

Abstract: D41 marking D61 SOT-23
Contextual Info: AZ23-V-G-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes, Dual FEATURES • Dual silicon planar Zener diodes, common anode 1 2 • The Zener voltages are graded according to the international E 24 standard • The parameters are valid for both diodes in one

micro USB 5Pin B SMT

Abstract: D44 SOT23 6pin marking E1 D054 PACDN044 d056 MSOP PACDN043 PACDN045 PACDN046 D44 SOT23
Contextual Info: PACDN042/43/44/45/46 Transient Voltage Suppressors / ESD Protectors Features Product Description • The family of devices consists of the PACDN042, PACDN043, PACDN044, PACDN045, and PACDN046. These devices are transient voltage suppressor arrays that provide a very high level of protection for sensitive

Contextual Info: W-Series Connectors The W-Series are plastic, rectangular, board level connectors,with .100" pitch contacts side by side and .050" offsetrow to row, allowing higher density contact packaging. Additional features: Configurations: Right angle or Straight, pins or sockets, withor without mounting ears.

2SD780

Abstract: d53 pnp transistor marking D53 MARKING D53 5L 2SD780A 1264B J22686
Contextual Info: NEC SILICON TRANSISTORS ELECTRON DEVICE 2 S D 7 8 0 .2 S D 7 8 0 A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE D IM ENSIO NS The 2SD780, 2SD780A are designed for use in small type equipments espe­ in millimeters

2SD780

Abstract: 7802S
Contextual Info: NEC SILICON TRANSISTORS BECTRON DEVICE 2SD780,2SD780A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2S0780, 2SD780A are designed fo r use in small type equipments espe­ in m illim eters 2 .8 + 0 2