D054 Search Results

transistor marking 4D

Abstract: BC859BW BC859CW BC859W BC860AW BC860BW BC860CW BC860W Transistor marking S
Contextual Info: bbS B 'm Philips Semiconductors D0544fl4 012 IAPX Product specification PNP general purpose transistor A MER FEATURES BC859W; BC860W PHILIPS/DISCRETE b?E PIN CONFIGURATION • S- mini package. • Low noise H i. EL 1 c DESCRIPTION PNP transistor in a plastic SOT323

TMP68661

Contextual Info: TOSHIBA UC/UP S4E D • c]0,ì 7 2 4 Iì G 0 5 4 G 7 5 TO SHIBA Ö24 * T 0 S 3 TM P68661 1. INTRODUCTION - r - is - 3 1 - a n The TMP68661 enhanced program m able communications interface (EPCI) is a universal synchoronous/asynchronous data communications controller chip th at is an

2269H

Contextual Info: TOSHIBA THMY7216C1EG-80H TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216C1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.

On semiconductor date Code sot-143

Abstract: 846AB SOT23 A1 TSSOP-8 footprint and soldering sot-23 d056 sot23 8X SOT23-5 318 SOT23 marking L2 sot23 MARKING CODE SOT23-5 HE marking L2 SOT23 6
Contextual Info: PACDN042 Transient Voltage Suppressors and ESD Protectors Product Description The PACDN042/43/44/45/46 family of transient voltage suppressor arrays provide a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge ESD .

18f24k22

Abstract: PIC18f45k22 example C18 codes pic18F26K22 example C codes pic18F44K22 PIC18F45K22 PIC18f46k22 example C18 codes i2c pin diagram of PIC18f45k22 pin diagram of PIC18LF45k22 embedded microcontroller PIC18FXXK22 PIC18 example C18 codes spi
Contextual Info: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41412B Note the following details of the code protection feature on Microchip devices: •

LC1210

Abstract: PIC H501 OSC500 ic c575 diagram SMDC110F K3638 SMDC110F-2 adc c520 cd 1691 cp cp c531
Contextual Info: 12位, 80 MSPS/105 MSPS/125 MSPS, 18V模数转换器 AD9233 功能框图 特性 应用 超声设备 中频采样的通信接收机 IS-95CDMA-One、IMT-2000 电池供电仪表 手持式示波仪 低成本数字示波器 概述 AD9233是一款单芯片、12位、80 MSPS/ 105 MSPS/125 MSPS

2SC930

Abstract: transistor 2SC930 2SC930NP 2SC2839 2SC930SPA 2SC930 D
Contextual Info: SANYO SEMICONDUCTOR CORP l^ifir|~^?cn 7 0 7 b % 2SC930 D004141 r-s/'/5r T “ 3 2 03 3 í - | 7 NPN. Epitaxial Planar Silico n Transistor 200 3 A AM Converter, FM RF • IF Amp Applications 545E The 2SC930 has two types of packges SPA and NP. Use • FM RF amp, mixer, OSC, converter, and IF amplifier.

pin diagram of PIC18f45k22

Abstract: PIC18F45K22 18F25K22 pic18F26K22 example C codes PIC18F26k22 PIC18F k22 PIC18LF26K22 PIC18F46K22 DS41412D PIC18FXXK22
Contextual Info: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41412D Note the following details of the code protection feature on Microchip devices: •

tfk 136

Contextual Info: TOSHIBA THMY6416C1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416C1BEG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: SIEMENS TEMPFET BTS115 Not for new design Replacement: BTS 115A • • • • • N channel Logic Level Enhancement mode Tem perature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 2 3 G D S Refer to circuit design hints (see chapter Technical Inform ation)

dynamic microphone

Abstract: D054 Gulton mic 342 buchanan electro-voice
Contextual Info: Sm ooth, wide-range response, and low sensitivity to m echanical shock, com bined w ith functional “ easy to h o ld ” styling, m akes the D 0 5 4 a versatile professional m icrophone suited for any num ber o f uses. The non­ reflecting, fawn beige M icom atte finish elim inates h ot

AD5932 evaluation board

Abstract: AD5932 AD59321
Contextual Info: Programmable Frequency Scan Waveform Generator AD5932 Data Sheet FEATURES GENERAL DESCRIPTION Programmable frequency profile No external components necessary Output frequency up to 25 MHz Burst-and-listen capability Preprogrammable frequency profile minimizes number of

AD520* differential amplifier

Abstract: ADR440 ADR441 ADR443 ADR444 ADR445
Contextual Info: Ultralow Noise, LDO XFET Voltage References with Current Sink and Source ADR440/ADR441/ADR443/ADR444/ADR445 PIN CONFIGURATIONS Ultralow noise 0.1 Hz to 10 Hz ADR440: 1 V p-p ADR441: 1.2 μV p-p ADR443: 1.4 μV p-p ADR444: 1.8 μV p-p ADR445: 2.25 μV p-p

63b01

Abstract: AC1331 3B01
Contextual Info: 3B Series 16 Channel Backplane 3B01 FEATURES Mix and Match 3B Series I/O Module Capability Factory Mutual FM Approved CE Certified +1500 V peak Channel/Channel and Input/Output Isolation -25oC to +85oC Temperature Range LEDs indicate when power is applied

u560100

Abstract: 2SA1318 2sc3331 transistor 2SC3331 2sa131
Contextual Info: Ordering number: EN 16 00A 2SA1318/2SC3331 PNP/ NPN Epitaxial Planar Silicon Transistors A F Am p Applications M, ,ár%& Use . Capable of being used in the low frequenoy to high frequency range. Features ♦ Large current oapaeity and wide ASO. : 2SA1318

Contextual Info: TO SH IB A THMY728071BEG-80.-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY728071BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFT/BFTL DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY7280D1EG-80H TENTATIVE T O SH IB A H YBRID D IG ITA L IN TEG R A T ED CIRCU IT 8,388,608-W ORD BY 72-BIT SYNCHRONOUS DRAM M O DULE DESCRIPTION The THMY7280D1EG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408FT DRAMs and an unbuffer on a printed circuit board.

814260

Abstract: PJ 1269
Contextual Info: November 1993 Edition 2.0 FUJITSU DATA SHEET M B 8 14260-60/-70/-80 CM O S 2 5 6 K X 16 BIT FAST PAGE M O D E DYNAMIC RAM CMOS 262,144 x 16 bit Fast Page Mode Dynamic RAM The Fujitsu MB814260 is a fully decoded CMOS Dynamic RAM DRAM that oontains 4,194,304

Contextual Info: TOSHIBA THLD25N01 B70#75#80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THLD25N01B is a 33,554,432-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 8 TC59WM815BFT DRAMs on a printed circuit board.

OQ45

Abstract: D018 D019 D032
Contextual Info: TOSHIBA THMY7216D0CEG-75,-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216D0CEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6404CFT DRAMs and PLL/Registers on a printed circuit board.

Contextual Info: TOSHIBA THLY641641 FG-80t-80L,-10,-1 OL TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY641641FG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM716FT/FTL DRAMs on a printed circuit board.

3B03

Abstract: AC1333
Contextual Info: 3B Series 4 Channel Backplane 3B03 FEATURES Mix and Match 3B Series I/O Module Capability Factory Mutual FM Approved CE Certified +1500 V peak Channel/Channel and Input/Output Isolation -25oC to +85oC Temperature Range LEDs indicate when power is applied

Contextual Info: Low Power, Low Noise Voltage References with Sink/Source Capability ADR360/ADR361/ADR363/ADR364/ADR365/ADR366 FEATURES APPLICATIONS Battery-powered instruments Portable medical instruments Data acquisition systems Industrial process controls Automotive NC 1

MS-012-AA

Contextual Info: Dual-Channel Digital Isolator ADuM1210 FEATURES GENERAL DESCRIPTION Narrow body, 8-lead SOIC Low power operation 5 V operation 1.1 mA per channel maximum @ 0 Mbps to 2 Mbps 3.7 mA per channel maximum @ 10 Mbps 3 V operation 0.8 mA per channel maximum @ 0 Mbps to 2 Mbps