D504 Search Results

NJ32

Abstract: THJ5486 THJ5459 THJ5484 THJ5485 THJ55456 THJ55466 THJ55476
Contextual Info: ALL E GR O M I C R O S Y S T E M S 8514019 SPRAGUE. INC T3 » • D50433Ô SE M IC O N D S/IC S D D G 3 S 6 1 3 ■ ALÛR 93D 0 3 5 8 1 3 > 7"-2 ?*2.S JUNCTION FIELD-EFFECT TRANSISTO R CH IPS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C Vgs oh

Contextual Info: ALLEGRO MICROSYSTEMS INC LIE » • D50433B □□□SflhS B4b ■ ALGR 2061 THRU 2069 1.5 A DARLINGTON SWITCHES High-voltage, high-current Darlington arrays ULN2061M through ULN2069B are designed for interface between low-level logic and a variety of peripheral loads such as relays, solenoids, dc and stepper

TRANSISTOR ba 751

Abstract: TRANSISTOR 751
Contextual Info: ALLEGRO MICROSYSTEMS INC ^3 D • D50433fl GDDSbST 3 ■ T - PRO CESS BNB 9 Process BNB NPN Darlington Transistor Process BNB is a double-diffused epitaxial planar NPN silicon Darlington pair. It is designed for use in high-gain, high-current amplifier circuits. Its comple­

1N914

Contextual Info: T3D J> • ALLEGRO MICROSYSTEMS INC D50433fl 00037^5 0 ■ ALGR PROCESS TTU Process TTU High-Speed Switching Diode A gold-doped silicon epitaxial diode used primarily in high-speed switching applications, Process TTU, with its P-type substrate, is the N P counterpart of PN

2851 transistor npn

Abstract: A1409-1 Transistor A14 2N2907 A-04 a1-4095 PNP 2N2907
Contextual Info: ALLE6R0 MICROSYSTEMS INC T3 D • D50433fl G003b47 7 ■ ALGR PROCESS BDA 9 / “0/ Process BDA PNP Small-Signal Transistor A general-purpose PNP transistor, Process BDA is used as a low-noise, high-gain amplifier and as a medium-power switcher at frequencies from dc to

transistor a13

Abstract: 2912 TRANSISTOR PNP A13 transistor 2912 npn D5043
Contextual Info: ALLEGRO MICROSYSTEMS INC 13 D • D50433Ö 00D3707 T ■ ALGR T -9 1 -0 1 PROCESS JMA Process JMA PNP Small-Signal Transistor Process JM A is a P N P double-diffused Silicon epi­ taxial planar transistor. Process JM A finds broad ap­ plication as a medium-power amplifier and switching

LC1210

Abstract: PIC H501 OSC500 ic c575 diagram SMDC110F K3638 SMDC110F-2 adc c520 cd 1691 cp cp c531
Contextual Info: 12位, 80 MSPS/105 MSPS/125 MSPS, 18V模数转换器 AD9233 功能框图 特性 应用 超声设备 中频采样的通信接收机 IS-95CDMA-One、IMT-2000 电池供电仪表 手持式示波仪 低成本数字示波器 概述 AD9233是一款单芯片、12位、80 MSPS/ 105 MSPS/125 MSPS

Hall Effect 3 pin ugn

Abstract: car pulse hall sensor UGN HALL Sprague Hall Effect sensor hall 4.5 24 pulse Ay hall sensor waveform of hall effect sensor UGS3056U
Contextual Info: AL LE GR O MICROSYSTEMS INC m 0SDM33S D ü G Mñ M T AL GR r-6 £ *-0 5 * AND 27612 U G S 3056 U: HALL EFFECT DIGITAL GEAR-TOOTH SENSORS WITHZERO-RPM CAPABILITY The Sprague Types UGN3056U and UGS3056U Hall effect digital gear-tooth sensors are bipolar integrated circuits that switch ON and

D504

Contextual Info: Extract from the online catalog VS-09-A-GC-ST/ST Order No.: 1689705 D-SUB panel mounting frame, shell size 1, with nine signal contacts, pin, gender changer, shielded, IP67 degree of protection

tpq2907

Contextual Info: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 S P R A GU E. T3 D • 05G433Ô GGD3ÔD7 3 ■ ALGR S E M I C O N D S / ICS 93 D 0 3 8 0 7 3 SE R IE S TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS O P R A G U E SERIES TPQ quad transistor arrays ^ are general-purpose silicon tran sisto r arrays

SDR1304

Abstract: SDR1305 SDR1306 SDR1308 TWX910-583-1807 UES1304
Contextual Info: SDR 1304 thru SDR 1308 3 AMP ULTRA FAST RECOVERY RECTIFIER 200-800 VOLTS CASE STYLE i 1-1830 Valley View Avenue La Miraaa. California 90633 1213 921-9560 T W X 910-583-^807 FA X 213-921-2396 FEATURES • • • • • • • PIV TO 800 VOLTS ULTRA FAST RECOVERY 70 NSEC MAX

transistor NEC K2500

Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
Contextual Info: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales

Contextual Info: 3-PHASE BRUSHLESS DC MOTOR CONTROLLER/DRIVER WITH BACK-EMF SENSING The A8905CLB isw a three-phase brushless dc motor controller/ driver for use with CD-ROM or DVD drives. The three half-bridge outputs are low on-resistance n-channel DMOS devices capable of

k d718

Abstract: transistor d472 D636 R transistor d669 D718 transistor d718 d718* transistor transistor d613 D674 D666
Contextual Info: Ordering number : ENN*6473 CMOS IC LC75878E, 75878W 1/8 to 1/10 Duty General-Purpose LCD Display Drivers Preliminary Overview Package Dimensions The LC75878E and LC75878W are 1/8 to 1/10 duty general-purpose LCD display drivers used for character and graphics display. These products operate under the

Contextual Info: T - 03 PRELIMINARY DATA SHEET 5 -2 1 -8 5 1SE D |fl3fe.bDll DDDlfiEM 1 | SOLID STATE DEVICES INC SDR1P THRU SDR1W .75 AMP ULTRA FAST RECOVERY RECTIHER 1 3 0 0 -1 8 0 0 VOLTS 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TW X 910-583-4807

Contextual Info: ALLEGRO MICROSYSTEMS INC TB ] • 0504330 0003bS5 b ■ ALGR r - 9 )• O i PROCESS BLA Process BLA NPN High-Voltage Transistor The NPN process BLA transistor is a double­ diffused silicon epitaxial planar device used primarily in video circuits and similar high-voltage, low-current

R5F35L3EKFF

Abstract: R5F35626
Contextual Info: M16C/5L Group, M16C/56 Group RENESAS MCU 1. REJ03B0221-0100 Rev.1.00 Feb 08, 2010 Overview 1.1 Features The M16C/5L Group, M16C/56 Group’s MCU is a single-chip control unit that utilizes high-performance silicon gate CMOS technology with the M16C/60 Series CPU core. The M16C/5L Group, M16C/56 Group

transistor C536

Abstract: transistor C535 C536 transistor C520 A/D 0603 10UH 240v AC voltage stabilizer schematic diagram c531 diode transistor C536 data sheet diode C531 C536
Contextual Info: 14-Bit, 105 MSPS/125 MSPS, 1.8 V Analog-to-Digital Converter AD9246 FEATURES FUNCTIONAL BLOCK DIAGRAM AVDD DRVDD AD9246 VIN+ VIN– 8-STAGE 1 1/2-BIT PIPELINE MDAC1 SHA 8 4 A/D 3 A/D REFT REFB CORRECTION LOGIC OR 15 OUTPUT BUFFERS DCO D13 MSB VREF D0 (LSB)

ICS9LP306

Abstract: Inventec SC7652 KBC1021 Inventec VAIL 2.0 kahuna rqa130n03 1981HD 51117 TP772
Contextual Info: GALLO 1.0 PV BUILD 2006.02.08 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : GALLO 1.0 SIZE CODE A3 CS SHEET REV DOC. NUMBER Model_No 1 OF A01 58 TABLE OF CONTENTS

BA41-00727A

Abstract: LE88CLGM 82801 hbm IDTCV179 20D2G q231 samsung lcd tv power supply schematic NH82801HEM NB8M-SE RB1 Wlan Cardbus
Contextual Info: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D TORINO 2 g n l u a s i t m

tps51620

Abstract: fds8884 tps51125 Inventec MPLC0730 AM4825P r5c804 TP889 hp d530 crb tps51125 kbc
Contextual Info: www.laptop-schematics.com INVENTEC Preliminary Test 2008/03/25 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : Preliminary Test SIZE CODE A3 CS DOC. NUMBER REV

HAMR5603

Abstract: M9-CSP64 UTC1117 KX15-50KLD SEAGATE ST340810A PMOSSOT23 ibm usa 2001 P6 MOTHERBOARD SERVICE MANUAL 180w subwoofer circuit diagram R101A w31 smd
Contextual Info: SERVICE MANUAL FOR E - 8188 BY: Rain Li TESTING TESTING TECHNOLOGY TECHNOLOGY DEPARTMENT DEPARTMENT // TSSC TSSC Apr . 2003 LCD PC E-8188 MAINTENANCE Contents 1. Hardware Engineering Specification - 3

samsung 822

Abstract: 37 TV samsung lcd Schematic circuit diagram samsung lcd tv power supply schematic schematic diagram crt tv samsung BD40 SAMSUNG TV 40 LCD SAMSUNG ELECTRONICS BA44 schematic atx 2.03 P4 37 TV samsung lcd Schematic g1003 lyon samsung
Contextual Info: -이 기술 자산으로 승인자만이 사용할사용할 수 있습니다 이 문서는 문서는삼성전자의 삼성전자의 기술 자산으로 승인자만이 수 있습니다 - This can notnot be be used without Samsung's authorization ThisDocument

c596

Abstract: 7534P-09G2-05 JS29 PC93338VJG C595 u504 suyin
Contextual Info: 1 2 3 4 5 6 7 8 VCC3_FIR VCC3 VCC3_FIR JS28 SUPER I/O CFG0=LOW DEFAULT : C595 10U 1206 10V C596 0.47U 0805 SHORT-SMT4 JS29 16 BIT ADDRESS DECODE FIR_GND CFG1=HIGH (10K PULL-HIGH): 11-BIT ADDRESS/COM2 X1(CLKIN) SA[0.15] SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8