D4340 Search Results

upd434000

Abstract: D434000GW-55L
Contextual Info: NEC D434000 524,288 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description 524,288-w ord by 8-bit organization Single + 5 -v o lt pow er supply Fully static o peration — no clock or refreshing T TL -com patible inputs and outputs Com m on I/O using three-state outputs

SSI117

Abstract: D4340 M3330 ssi-117
Contextual Info: *#fü COMPUTER & PERIPHERAL COMPONENTS PRELIMINARY IMP4250 Programmable Continuous-time Filter General Description Features The IMP4250 is a CMOS, programmable, continuous­ time active filter. It allows microprocessor control of precise filter functions over a broad spectrum. The filter

D434004

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT D434004A 4M -BIT CMOS FAST SRAM 1M-W ORD BY 4-BIT Description The /¿D434004A is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.

UPD434016A

Abstract: D434016
Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT D434016A 4M -BIT CMOS FAST SRAM 256K-W ORD BY 16-BIT Description The /¿D434016A is a high speed, low power, 4,194,304 bits 262,144 w ords by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.

D434008ALLE

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT /¿D434008AL 4M -BIT CMOS FAST SRAM 512K-W ORD BY 8-BIT Description The /¿D434008AL is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

D434008ALE

Abstract: d434008 PD434008A PD434
Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT D434008A 4M -BIT CMOS FAST SRAM 512K-W ORD BY 8-BIT Description The /¿D434008A is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.

D434008

Abstract: D434008AL
Contextual Info: PRlORi I \ PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT _¿ ¿ P P 4 3 4 0 0 8 A L 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT Description The /D434008AL is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. OpenHUg suppty voltage is 3.3 V ± 0.3 V.

D434001

Abstract: D434001ALG5
Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT D434001 AL 4M -BIT CMOS FAST SRAM 4M-W ORD BY 1-BIT Description The /¿D434001AL is a high speed, low power, 4,194,304 bits 4,194,304 words by 1 bit CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT U P D 4 3 4 0 1 6 A L 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The ^¡D434016AL is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

D434004

Abstract: PD434004AL
Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT /¿D434004AL 4M -BIT CMOS FAST SRAM 1M-W ORD BY 4-BIT Description The /¿D434004AL is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

D434001

Abstract: D4340
Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT D434001 A 4M -BIT CMOS FAST SRAM 4M-W ORD BY 1-BIT Description The /¿D434001A is a high speed, low power, 4,194,304 bits 4,194,304 w ords by 1 bit CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.

UPD434000

Abstract: CZ-70
Contextual Info: NEC D434000 524,288 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description The ¿D434000 is a 524,288-word by 8-bit static RAM fabricated with advanced silicon-gate technology. CMOS peripheral circuits and N-channel memory cells with thin-film transistor TFT loads make the