D2G2 Search Results

Contextual Info: O K I Semiconductor MSM51V17805A 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V17805A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17805A achieves high integration, high-speed operation, and lowpow er consumption due to quadruple polysilicon double metal CMOS. The MSM51V17805A is

dg1u

Abstract: XD2PA22 XD2PA24 XD2PA12 XD2PA14 ZB2BV6 D1L20 xb2bs8445 ZB2BY4101 xd2pa
Contextual Info: Control and signalling units Ø 22 mm fixing Type XB2-B, with chromium plated metal bezel Characteristics Environment Conforming to standards EN 947-5-1 Ambient air temperature Operation : - 25…+ 70 °C Degree of protection IP 65 : Double-headed pushbuttons : IP 40 (IP 65 with sealing boot ZB2-BW008)

Contextual Info: O K I Semiconductor MSM5 1 16160 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160A achieves high integration, high-speed operation, and low-power

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

Contextual Info: 8 SCHEMATIC 1,240 [31.5] SPEC IFIC A T IO N S 0,827 [21,0] - FUNCTION: 1P1T OFF-ON RATINGS: 20A 125VAC [UL, cUL] 16A 250VAC [UL, cUL] 3/4 HP 250VAC [UL, cUL] 16 4 A 250V~1E4 T125 [European] 10(2)A 250V~5E4 T125 [European] O ELECTRICAL LIFE: 10,000 Cycles CONTACT RESISTANCE: