D2021 Search Results

Contextual Info: TetraFET D2021UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W – 28V – 1GHz SINGLE ENDED H K FEATURES M L J E F • SIMPLIFIED AMPLIFIER DESIGN G SO8 PACKAGE

D2021UK

Abstract: PLC 168 h 6906
Contextual Info: TetraFET D2021UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W – 28V – 1GHz SINGLE ENDED H K FEATURES M L J E F • SIMPLIFIED AMPLIFIER DESIGN G SO8 PACKAGE

D2021UK

Contextual Info: TetraFET D2021UK METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W – 28V – 1GHz SINGLE ENDED H K FEATURES M L J • SIMPLIFIED AMPLIFIER DESIGN E F G • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D2021UK METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W – 28V – 1GHz SINGLE ENDED H K FEATURES M L J E F • SIMPLIFIED AMPLIFIER DESIGN G SO8 PACKAGE PIN 1 – SOURCE

CL333

Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH64S72AWJA -5, -6,-7 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72AWJA is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of t hirty -six

Contextual Info: MITSUBISHI LSIs MH32S72BBFA -7,-8 2,41 5,9 1 9,1 04-B IT 33,554,432-W O R D BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72BBFA is 33554432 - word x 72-bit S ynchronous DRAM stacked structural module. This consist of th irty -s ix industry standard 1 6 M x 4

Contextual Info: MITSUBISHI LSIs MH32S72BAFA -7,-8 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72BAFA is 33554432 - word x 72-bit Synchronous DRAM stacked structural module. This consist of thirty-six industry standard 16M x 4 Synchronous

D2018

Abstract: D2017 Transformer EN60742 Transformer D2017 D2020 D2021 d2017 transistor D2019 d2022 transformer 230v 3VA application
Contextual Info: DAGNALL ELECTRONICS LIMITED Shuttleworth Road, Elms Industrial Estate, Bedford. MK41 0EP UK TEL +44 0 1234 330077 FAX +44(0)1234 330088 E-mail sales@dagnall-electronics.com Iss 1 09/01/03 • 1 of 3 P R O D U C T D A T A S H E E T 2.3VA PCB MOUNTED ENCAPSULATED TRANSFORMER

Contextual Info: M IT S U B IS H I LSIs MH32S72BAFA -7,-8 2,415,919,104-BIT 33,554,432-W O RD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72BAFA is 33554432 - word x 72-bit Synchronous DRAM stacked structural module. This consist of thirty-six industry standard 16M x 4 Synchronous

D3031

Contextual Info: DP83265 PRELIMINARY National Semiconductor DP83265 BSI Device FDDI System Interface General Description Features The DP83265 BSI device implements an interface between the National FDDI BMACtm device and a host system. It provides a multi-frame, MAC-level interface to one or more

Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH64S72AWJA -6,-7 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72AWJA is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of t hirty -six

Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH28S72PJG -5,-6,-7 9,663,676,416-BIT 134,217,728-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH28S72PJG is 134,217,728 - word x 72-bit Sy nchronous DRAM stacked structural module. This

Contextual Info: MITSUBISHI LSIs MH32S72BBFA -6 2,41 5,9 1 9,1 04-B IT 33,554,432-W O R D BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72BBFA is 33554432 - word x 72-bit S ynchronous DRAM stacked structural module. This consist of th irty -s ix industry standard 1 6 M x 4

JXXX

Contextual Info: MITSUBISHI LSIs e MH64S72QJA -7,-8 e°- 4,831,838,208-BIT 67,108,864-WQRD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY S o m e o f c o n te n ts are s u b je c t to c h a n g e w ith o u t n o tice . DESCRIPTION The MH64S72QJA is 67108864 - word x 72-bit

MH32S72BBFA

Abstract: MH32S72BBFA-7 MH32S72BBFA-8
Contextual Info: MITSUBISHI LSIs MH32S72BBFA -7,-8 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72BBFA is 33554432 - word x 72-bit Sy nchronous DRAM stacked structural module. This consist of thirty -six industry standard 16M x 4

MH32S72DBFA

Abstract: MH32S72DBFA-6
Contextual Info: MITSUBISHI LSIs Preliminary Spec. Some contents are subject to change without notice. MH32S72DBFA -6 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72DBFA is 33554432 - word x 72-bit Sy nchronous DRAM stacked structural module. This

MO-150

Abstract: W223
Contextual Info: W223 SDRAM Buffer -2 DIMM Features Key Specification • Ten skew-controlled CMOS outputs SDRAM0:9 • Supports two SDRAM DIMMs • Ideal for high performance systems designed around Intel’s latest Mobile chip set • I2C Serial configuration interface

MH32S72DBFA

Abstract: MH32S72DBFA-6
Contextual Info: MITSUBISHI LSIs Preliminary Spec. Some contents are subject to change without notice. MH32S72DBFA -6 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72DBFA is 33554432 - word x 72-bit Sy nchronous DRAM stacked structural module. This

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

Contextual Info: MITSUBISHI LSIs MH32S72BAFA -7,-8 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72BAFA is 33554432 - word x 72-bit Synchronous DRAM stacked structural module. This consist of thirty-six industry standard 16M x 4 Synchronous

Contextual Info: MITSUBISHI LSIs MH64S72QJA -6 4 ,8 3 1 ,838,208-B IT 64,108,864-W Q RD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72QJA is 64108864 - word x 72-bit Synchronous DRAM stacked structural module. This consist of th irty-six industry standard 32M x 4

432w

Contextual Info: MITSUBISHI LSIs MH32S72BAFA -7,-8 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72BAFA is 33554432 - word x 72-bit Synchronous DRAM stacked structural module. This consist of thirty-six industry standard 16M x 4 Synchronous

MH64S72QJA

Abstract: MH64S72QJA-7 MH64S72QJA-8
Contextual Info: MITSUBISHI LSIs MH64S72QJA -7,-8 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are subject to change w ithout notice. DESCRIPTION The MH64S72QJA is 67108864 - word x 72-bit Sy nchronous DRAM stacked structural module. This

MH64S72QJA

Abstract: MH64S72QJA-6
Contextual Info: MITSUBISHI LSIs MH64S72QJA -6 4,831,838,208-BIT 64,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72QJA is 64108864 - word x 72-bit Sy nchronous DRAM stacked structural module. This consist of thirty -six industry standard 32M x 4