D2012 TRANSISTOR Search Results

D2012 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA011		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini	Datasheet
TPCP8513		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8	Datasheet

D2012 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor d2012 Abstract: d2012 transistor TRANSISTOR-D2012 D2012 transistor equivalent d2012 Contextual Info: D2012 YOUDA TRANSISTOR Si NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES Collector-Emitter voltage: BVCBO= 60V Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage	Original	d2012 transistor--d2012 transistor d2012 d2012 transistor +2transistor-d2012 transistor equivalent d2012	PDF
D2012 Contextual Info: D2012 YOUDA TRANSISTOR SI NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES Collector-Emitter voltage: BVCBO= 60V Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage	Original	d2012	PDF
transistor d2012 Abstract: D2012 Contextual Info: D2012 YOUDA TRANSISTOR Si NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES Collector-Emitter voltage: BVCBO= 60V Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage	Original	d2012 transistor d2012	PDF
transistor d2012 Abstract: transistor d2012 specification d2012 transistor D2012 BTD2012FP Contextual Info: CYStech Electronics Corp. Spec. No. : C822FP Issued Date : 2005.07.29 Revised Date : Page No. : 1/ 5 Low Vcesat NPN Epitaxial Planar Transistor BTD2012FP Features • Low collector-to-emitter saturation voltage, typically VCE SAT =0.25V at IC / IB=2A / 0.2A	Original	c822fp btd2012fp o-220fp ul94v-0 +4transistor d2012 transistor d2012 specification d2012 transistor d2012	PDF
Contextual Info: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)	Original	2sd2012	PDF
transistor d2012 Abstract: d2012 transistor br d2012 d2012 AMPLIFIER 2SD2012 D2012 D2012 toshiba toshiba d2012 Contextual Info: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)	Original	2sd2012 transistor d2012 d2012 transistor br d2012 +4d2012 amplifier d2012 d2012 toshiba toshiba d2012	PDF
D2012 toshiba Abstract: transistor d2012 d2012 transistor br d2012 transistor 2SD2012 Contextual Info: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)	Original	2sd2012 2-10r1a d2012 toshiba transistor d2012 +3d2012 transistor br d2012 transistor 2sd2012	PDF
transistor d2012 Abstract: d2012 transistor D2012 toshiba d2012 AMPLIFIER br d2012 2SD2012 D2012 Contextual Info: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)	Original	2sd2012 transistor d2012 d2012 transistor d2012 toshiba +3d2012 amplifier br d2012 d2012	PDF
transistor d2012 Abstract: d2012 transistor d2012 AMPLIFIER BR D2012 2SD2012 D2012 D2012 toshiba Contextual Info: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • Low saturation voltage: VCE sat = 0.4 V (typ.) (IC = 2A / IB = 0.2A) • High power dissipation: PC = 25 W (Tc = 25°C) Unit: mm Absolute Maximum Ratings (Ta = 25°C)	Original	2sd2012 transistor d2012 d2012 transistor d2012 amplifier +3br d2012 d2012 d2012 toshiba	PDF
J1-0603 Abstract: SSD2119 LM LED driver SD card socket, footprint to PCB transistor d2012 HDR 2x5 GCM155R71C104KA HDR1X4 microSD card adapter circuit diagram 60pin LCD RGB Contextual Info: Stellaris Intelligent Display Module with 3.5" Landscape Display Reference Design Kit User ’s Manual RDK-BDC-06 Co pyrigh t 2 008– 201 0 Te xas In strumen ts Copyright Copyright © 2008–2010 Texas Instruments, Inc. All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments.	Original	rdk-bdc-06 j1-0603 ssd2119 lm led driver +7sd card socket, footprint to pcb transistor d2012 hdr 2x5 gcm155r71c104ka hdr1x4 microsd card adapter circuit diagram 60pin lcd rgb	PDF
70H40 Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©	OCR Scan	2sa1162 2sa1163 2sc1815 2sa1015 +162sc2458 2sc2459 2sa1048 2sa1049 2sc2712 2sc2713 70h40 transistor equivalent d2012 2sc734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk for low noise audio amplifier applications 2sa970 bl equivalent 2sa776 gr	PDF
transistor D2058 Abstract: K D2058 Y transistor D2041 D2058 transistor transistor K D2059 D2061 transistor KPC-CC01 d2058 D2061 Transistor D2010 Contextual Info: PLEASE READ PRIOR TO INSTALLATION FOR SAFETY.  AC input power must be disconnected before any wiring to the AC motor drive is made. DANGER  Even if the power has been turned off, a charge may still remain in the DC-link capacitors with hazardous voltages before the POWER LED is OFF. Please do	Original	c2000 transistor d2058 k d2058 y transistor d2041 +7d2058 transistor transistor k d2059 d2061 transistor kpc-cc01 d2058 d2061 transistor d2010	PDF