D1016 Search Results
D1016 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| D1016UK | Semelab | Metal Gate RF Silicon FET | Original | 46.22KB | 4 | ||
| D1016UK | Unknown | Shortform Datasheet & Cross References Data | Short Form | 76.63KB | 1 |
D1016 Price and Stock
Samtec Inc PMSD-10-16-K-05.96-D-LDS |
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Samtec Inc PMSD-10-16-K-06.50-S |
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Samtec Inc PMSD-10-16-K-10.00-D-LDX.165 POWER MATE DOUBLE |
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PMSD-10-16-K-10.00-D-LDX |
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PMSD-10-16-K-10.00-D-LDX | Bulk | 3 Weeks | 1 |
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PMSD-10-16-K-10.00-D-LDX | 1 |
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Samtec Inc PMSD-10-16-K-28.25-S-M |
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PMSD-10-16-K-28.25-S-M |
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Samtec Inc PMSD-10-16-K-30.06-S |
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D1016 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: bGE » - • 6133167 ÜÜDOTBfl 40b ■ S f I L B SEHELAB PLC ^ P 3 \-2 _ S SEMELAB D1016UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOSRFFET 20W -28V -500M H z PUSH-PULL MECHANICAL DATA Dimensions FEATURES • SIMPLIFIED AMPLIFIER DESIGN |
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d1016uk-500m300/j | |
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Contextual Info: TetraFET D1016UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 500MHz PUSH–PULL B H C G 2 3 1 D A E 5 4 F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N M J O K • SUITABLE FOR BROAD BAND APPLICATIONS |
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d1016uk500mhz | |
18-50VContextual Info: H D 10160 1 2 - b it P a r it y G e n e r a t o r / C h e c k e r Unconnected inputs are pulled to low logic levels • _ _ _ _ _ _ anH n e n p r a tin n fo r leSS The H D10160 consists of nine Exclusive-OR gates in a single package, internally connected to |
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hd1016012-bit18-50v | |
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Contextual Info: TetraFET D1016UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 500MHz PUSH–PULL B H C G 3 2 1 D A E 5 4 P F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N M J O K • SUITABLE FOR BROAD BAND APPLICATIONS |
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d1016uk500mhz50ohm19swg+1 | |
coax 50ohmContextual Info: TetraFET D1016UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 500MHz PUSH–PULL B H C G 2 3 1 A D E 5 4 F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N M J O K • SUITABLE FOR BROAD BAND APPLICATIONS |
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d1016uk500mhz50ohm19swg+2 | |
D1016
Abstract: D1016UK T50-6 coax 50ohm 19SW
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d1016uk500mhz50ohm19swg+4 | |
t50-6 toroid
Abstract: D1016UK T50-6, toroid T50-6
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d1016uk500mhz50ohm19swg+3 | |
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Contextual Info: nil Vrr r = mi TetraFET SEM E D1016UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 500MHz PUSH-PULL “1 _ < F ► FEATURES i i • SIMPLIFIED AMPLIFIER DESIGN r r • SUITABLE FOR BROAD BAND APPLICATIONS |
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d1016uk500mhz | |
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Contextual Info: TetraFET D1016UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 500MHz PUSH–PULL B H C G 2 3 1 A D E 5 4 F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N M J O K • SUITABLE FOR BROAD BAND APPLICATIONS |
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d1016uk500mhz50ohm19swg+1 | |
HD10160Contextual Info: H D 10160 1 2 - b it P a r it y G e n e r a t o r / C h e c k e r Unconnected inputs are pulled to low logic levels • _ anH n e n p r a tin n fo r leSS The H D10160 consists of nine Exclusive-OR gates in a single package, internally connected to than 12 bits. |
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hd1016012-bit-301c | |
D1016UK
Abstract: T50-6 t50-6 toroid
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d1016uk500mhz50ohm19swg+2 | |
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Contextual Info: TetraFET D1016UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 500MHz PUSH–PULL B H C G 2 3 1 A D E 5 4 F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N M J O K • SUITABLE FOR BROAD BAND APPLICATIONS |
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d1016uk500mhz50ohm19swg+1 | |
D1016UK
Abstract: power amplifier s band 3 ghz 100w
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d1016uk500mhz27x45power amplifier s band 3 ghz 100w | |
K975
Abstract: transistor K975 k974 K972 transistor k974 K973 k972 transistor D1071 transistor K973 K971
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d10161d10361d10711d10721+16 | |
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ADCMP671Contextual Info: FEATURES FUNCTIONAL BLOCK DIAGRAM VDD Window monitoring with minimum processor I/O Individually monitoring N rails with only N + 1 processor I/O 400 mV, ± 0.275% threshold at VDD = 3.3 V, 25°C Supply range: 1.7 V to 5.5 V Low quiescent current: 17 A maximum at 125°C |
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adcmp671400mv02808-amo-193-aa+2 | |
17A17Contextual Info: Ordering number : EN385193B CMOS P-sub LC4103TAB-01,4103TAB-02,4103C N0 . 3& 5193B SA\YO STN LCD Dot Matrix Common Driver i Preliminary Overview The LC4103 is a common driver LSI fen- large-scale dot matrix LCD displays. It includes a 160-bit bidirectional |
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en385193b5193blc4103tab-014103tab-02+5 | |
m7101
Abstract: hp 2140 circuit diagram of motherboard uli m1573 m1573 m1573 a1 AOS3413 schematic diagram lcd tv sharp inverter ATI-RS480M M1573M keyboard and touchpad schematic
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m1573u1014j1014q1027+15 | |
BFM12
Abstract: BFM33 BFM34 BFM21 BFM-12 BFM32 D1022UK D1053UK D1015UK
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bfm12bfm21bfm22bfm23+10 | |
2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
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2n7588p3139bc233asprague 40d+6 | |
BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
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bs9000d3007he4000b80ribution+10 | |
D1016
Abstract: epcos D1016 B7630 B7631 UMTS frontend
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d1016epcos d1016b7630b7631+1 | |
RE10711
Abstract: K975
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erg4005re10711k975 | |
D10-160GH
Abstract: oscilloscope tube
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d10-iso-d10-160ghd10-160gmd10-160gp+1 | |
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Contextual Info: VSC6134 Datasheet Features ● ● ● ● ● ● ● ● ● ● Two ITU-T G.709-compliant processors GR253-compliant STS192 section and line processor OTU synchronous and asynchronous mapping 10 GbE transport with RMON MIB per IEEE 802.3 ITU-T G.975 Reed Solomon encoder and decoder |
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vsc6134709-compliantgr253-compliantsts192+5 | |