D1005UK Search Results

Contextual Info: bDE D M 6133107 OODOTlfl blû • S M L B - 'T-1>\-ZS SEMELAB SEMELAB PLC D1005UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RFFET 80W -28V -175M H z SINGLE ENDED MECHANICAL DATA Dim ensions FEATURES

Contextual Info: TetraFET D1005UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED M F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J I K • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: II I TetraFET itti SEME il D1005UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 8 0 W -2 8 V -1 7 5 M H z SINGLE ENDED *• F 4 FEATURES t H y • SIMPLIFIED AMPLIFIER DESIGN . K i J • SUITABLE FOR BROAD BAND APPLICATIONS

D1005UK

Contextual Info: TetraFET D1005UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED M F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J I K • SUITABLE FOR BROAD BAND APPLICATIONS

D1005UK

Contextual Info: TetraFET D1005UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED M F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J I K • SUITABLE FOR BROAD BAND APPLICATIONS

D1005UK

Abstract: D1005
Contextual Info: TetraFET D1005UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED M F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J I K • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D1005UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED M F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J I K • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: IUI TetraFET =MMË SEM E D1005UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 8 0 W -2 8 V -1 7 5 M H z SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN H K I J • SUITABLE FOR BROAD BAND APPLICATIONS

BFM12

Abstract: BFM33 BFM34 BFM21 BFM-12 BFM32 D1022UK D1053UK D1015UK
Contextual Info: R.F. Division Semelab Device Type Working Power Working b v dss *D Freq. W atts Voltage Volts Am ps Min. Gain 13db BFM12 4 28 70 5 200MHz BFM21 0.75 0.75 4 28 12 65 0,2 0.2 2.5GHz 2.5GHz 1 2GHz 11db 13db 1.6 2 1GHz 13db 1GHz 13db 1GHz 13db 0.8GHz 13db 16db

transistor 5cw

Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

GNS430

Abstract: D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK
Contextual Info: Images of Garmin's GNS530 and GNS430 courtesy of Garmin Ltd. Copyright 1998-2006: Garmin Ltd. or its subsidiaries. All rights reserved. Technical Excellence Quality and Experience in RF Technology Worldwide RF Sales Representatives Semelab RF MOSFETs are manufactured using a unique silicon