D044 Z Search Results

E4000

Abstract: E408 D138 marking d037 D058
Contextual Info: DIELECTRIC MATERIALS E4000 - General description E4000 SERIES Description TEMEX has designed a range of very high Q dielectric resonators operating in microwave and millimetric frequency range. This series offers a typical Q factor of 15000 at 10 GHz. The E4000 series is especially suitable for applications which

BA1A11

Abstract: DPSD8MX64RSW
Contextual Info: DENSE-PAC MIC R OS Y ISI'.; MS 64 Megabyte SDRAM SODIMM DPSD8MX64RSW DESCRIPTION: PIN-OUT DIAGRAM The JEDEC compatible DPSD8MX64RSW is a high speed 64 Megabyte CMOS Synchronous DRAM Srnail Outline DIMM consisting of eight 2Mx8x4 SDRAM devices. These modules offer substantial advances in DRAM operating performance, including the ability

D043B

Abstract: A06A D043C PIC18F458 pin configuration D043A D005 PIC18F2585 PIC18F2680 PIC18F458 PIC18F4585
Contextual Info: PIC18F2585/2680/4585/4680 PIC18F2585/2680/4585/4680 Rev. A1 Silicon/Data Sheet Errata The PIC18F2585/2680/4585/4680 Rev. A1 parts you have received conform functionally to the Device Data Sheet DS39625B , except for the anomalies described below. Microchip intends to address all issues listed here in

M1110

Abstract: D004 ic P155
Contextual Info: M1110 Parallel Ein-/Ausgabe Box Beckhoff II/O-System M1110 Parallel Ein-/Ausgabe Box Technische Beschreibung Eiserstraße 5 33415 Verl Datum 05.05.94 Telefon 05246/709-0 Telefax 05246/70980 Version 2.1 Seite 1 von 17 M1110 Parallel Ein-/Ausgabe Box Beckhoff II/O-System

commax

Abstract: d040
Contextual Info: Ordering number : EN5782 CM OS 1C LC4608C ISAHrni Printer Head Driver Overview The LC4608C is a driver for ink-jet printer heads with 64bit output. It converts 4-bit parallel input into 16-step gray scale output by regulating the transmission gate’s output

Dense-Pac Microsystems

Contextual Info: Intel PCI 00 Approved 128 MB DIMM by Dense-Pac for use in Intel® 440BX AGP Chip Set (Nightshade motherboard) See Intel’s web page for more information: http://support.inteL com/support/m otherboartis/server/n440bx/nbx_mem.htm ORDER NOW! DPSD16MS72RW-PC100-C

Contextual Info: LSI LOGIC L64281 FFT Video Shift Register FFTSR Preliminary General Description The L64281 is a high-speed Fast Fourier Trans­ form (FFT) video shift register. It is used to per­ form data formatting in real-time FFT systems using the L64280 Fast Fourier Transform Pro­

PBSRAM

Abstract: 80364K64 DQ571
Contextual Info: MC 8 0 3 6 4K 64 Low M o S ys Power 3.3V/2.5V 64K x 64 P B S R A M High perform ance, low pow er pipeline burst SRAM • Ultra low pow er single chip 512Kbyte Cache for green PC and battery pow ered PC 2 High perform ance • • • • 83-133M Hz Speed grades

ed16m

Abstract: iRAM
Contextual Info: D E N S E -P A C 128 Megabyte DRAM SODIMM M I C R O S Y S T E M S DP3ED16MX64RSW5 PRELIMINARY DESCRIPTION: PIN-OUT The DP3 ED16MX64RSW5 is the 16 Meg x 64, 3.3 Volt, EDO Dynamic RAM module that utilize the new and innovative space saving TSOP stacking technology. The module

Nippon capacitors

Contextual Info: HB56UW3273 Series 33554432-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-653 Z Preliminary Rev. 0.0 Sep. 6, 1996 Description The HB56UW3273 Series belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been developed an optimized main memory solution for 4 and 8-byte processor applications. The

Contextual Info: HB56UW3273 Series 33554432-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-653 Z Preliminary Rev. 0.0 Sep. 6,1996 Description The HB56UW3273 Series belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been developed an optimized main memory solution for 4 and 8-byte processor applications. The

Contextual Info: TO S H IB A THMY6440F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6440F1BEG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY723281 EG-80f-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY723281EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM708FT/FTL DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY7216C1BEG-80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216C1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: T O S H IB A THLY6416G1 FG-80,-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY6416G1FG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716FT/FTL DRAMs on a printed circuit board.

PC133-SDRAM

Contextual Info: T O S H IB A THMY7232G1EG-75 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7232G1EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY7232G1 EG-80#-80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7232G1EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM708FT/FTL DRAMs and an unbuffer on a printed circuit board.

THMY7280F1BEG-80

Abstract: TC59S6408BFT THMY7280F1BBG CS13X OA54
Contextual Info: TOSHIBA THMY7280F1 BEG-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 8,388,6O8-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7280F1BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFT DRAMs and an unbufler on a printed circuit board.

Intel 1103 DRAM

Abstract: D03B intel 1103 ram D018 D019 D032
Contextual Info: TOSHIBA THMY6432G1EG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS D RAM MODULE DESCRIPTION The THMY6416E1BEG is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY7280F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The T H M Y 7 2 8 0 F 1 B E G is a 8,3 8 8 ,6 0 8 -w o rd by 7 2 -b it synchronous dynam ic RAM module consisting of

TC59S6416BFT

Abstract: THMY6440F1BEG-80
Contextual Info: TO SH IB A THMY6440F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6440F1BEG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TO SH IBA THMY51N01 B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51N01B is a 67,108,864-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59SM808BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY641691 EG-80#-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY641691EG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM708FT DRAMs and an unbuffer on a printed circuit board.

U1680

Contextual Info: TO SH IB A THMY6440F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6440F1BEG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416BFT DRAMs and an unbuffer on a printed circuit board.