D03D Search Results

Contextual Info: N AP1ER PHILIPS/PISCRETE b'lE D bb53T31 D03D675 T73 * A P X Product Specification Philips semiconductors PowerMOS transistor BUK638-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

BUK444-500B

Abstract: transistor BUK444-500B transistor npc 231
Contextual Info: N AUER PHILIPS/DISCRETE b^E » • bbSB'iBl D03D535 b43 « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

P721

Abstract: LQFP080-P-1414A MN101D03A d03D
Contextual Info: □ M N 1 0 1 D 0 3 A 1 Type / D 0 3 D / D F 0 3 D MN101D03A under planning / D03D / DF03D (under development) 1 ROM (x8-Bit) 32 K / 64 K / 64 K (built-in flash EEPROM) 1 RAM ( 8-Bit) 1 024 / 2 048 / 2 048 1 Minimum Instruction Execution Time 0.10 us (at 4.5 V to 5.5 V, 20 MHz)

fccj

Abstract: BUK456-1000B TRANSISTOR na 44 B44 transistor
Contextual Info: N AUER PHILIPS/DISCRETE bTE D • bbS3T31 D03Db^S TT1 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: HM101494 Series-16384-Words x 4-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM101494 is ECL 100K compatible, 16384-words by 4-bits read/write random access memory developed for high speed sys­ tems such as scratch pads and control/buffer storage.

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson BURR - BROW N i INA115 1 Precision INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION • LOW OFFSET VOLTAGE: 50|iV max T h e IN A 1 15 is a low cost, general purpose instru m en ­ tation am plifier o ffering excellen t accuracy. Its versa­

Zl11

Abstract: A12C
Contextual Info: ADV MI CRO MEMORY 4ÔE » 0E5755Ö GÜ3 D4 b ö ö • AÎ1DM T—46—13-29 Advanced Micro Devices Am27C020 2 Megabit (262,144 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ 100% Flashrlte programming -typical programming time of 30 seconds Fast access time

1001d

Contextual Info: CYPRESS PRELIMINARY C Y 7 C 95 4D X ATM HOTLink Transceiver Features technology, functionality, and integration over the field proven CY7B923/933 HOTLink. Second generation HOTLink technology UTOPIA level I and II compatible host bus interface Three-bit Multi-phy address capability built-in

Contextual Info: ADV MICRO MEMORY MAE D Q257S2Û 0D304Ô4 b IA M D 4 T -4 6 -1 3 -2 9 Advanced Micro Devices Am27C2048 2 Megabit (131,072 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ Fast access time -v 100 ns Low power consumption - 25 mA typical CMOS standby current

SGSP474

Contextual Info: 30E t • 7iai237 0030021 S ■ _ / = 7 S G S - T H O M S O N 5 T ? ' ,H t " SM S G S P 4 7 4 ^ 7 # [ÜDffi Q [E[L[i(g¥^(ó)iD(gÍ SG SP 475 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on) SGSP474 SGSP475 450 V 400 V 0.7 fi 0.55 fi

28F010

Abstract: AM28F010 AMD 478 socket pinout
Contextual Info: AD V MICRO MEMORY 4ÖE » G2S7S5Û Preliminary 0030715 T •AMD4 a T—46—13—27 Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time Low power consumption

Contextual Info: TAS5086 www.ti.com SLES131 – FEBRUARY 2005 PurePath Digital AUDIO SIX-CHANNEL PWM PROCESSOR FEATURES • • • Audio Input/Output – Automatic Master Clock Rate and Data Sample Rate Detection – Four Serial Audio Inputs Eight Channels – Support for 32, 44.1, 48, 88.2, 96, 176.4, and

Contextual Info: KM 4 1 6 C 1 2 0 0 B T CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

qml-38535

Abstract: CDFP2-F10 CQCC1-N20 GDFP1-F10 003001b
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MODA APPROVED Make change to interim electricals as specified in TABLE In accordance with N.O.R. 5962-R042-96. 96-01-17 M. A. FRYE Add case outline H and device type 02. Make changes to 1.2.2, 1.3, 1.4, TABLE I, and FIGURE 1. ro

Contextual Info: N ANER PHILIPS/DISCRETE fc.'lE D bbSBTBl DQBDafciD SHI * A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. FREDFET with fast recovery

BLRM

Abstract: TRANSISTOR FS 10 TM
Contextual Info: N AMER PHILIPS/DISCRETE bb53T31 D03041fl bfi3 * A P X bRE D Product Specification Philips Semiconductors PowerMOS transistor BUK105-50L/S Logic level TOPFET_ BUK105-50LP/SP DESCRIPTION Monolithic temperature and overload protected logic level power

Contextual Info: N AUER PHILIPS/DISCRETE bRE D bb53R31 003040? flTfl M A R X Product Specification Philips Semiconductors BUK104-50L/S BUK104-50LP/SP PowerMOS transistor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overloadprotected logic level power MOSFET in a 5 pin plastic

Contextual Info: N AUER PHI LIP S/ DIS CR ETE bRE D • bbS3R31 0D30727 33R « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.

Contextual Info: N AMER PHILIPS/DISCRETE bTE ]> bbS3^31 Q03D70S 77fl W A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in

Contextual Info: N AMER PHILIPS/DISCRETE bRE D • bbS3R31 0D3QSbS 3fi0 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: Philips S em iconductors bbSHTBl Q0301Mb ATS M APX Product specification UHF push-pull power MOS transistor — •— BLF545 N AMER PHILIPS/DISCRETE FEATURES b^E D _ PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

Contextual Info: ADV MICRO M E M O R Y 4ÛE D 025752Û DD3DSÛ3 ö T—46—13-25 Am27X512 Advanced Micro Devices 65,536 x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • ■ ■ As an OTP EPROM alternative: - Factory optimized programming - Fully tested and guaranteed

mcm6830

Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
Contextual Info: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories

transistor A 564

Abstract: 100-C BUK637-400B
Contextual Info: N AflER P H I L I P S / D I S C R E T E Philips Semiconductors blE D • bbS3T31 DDBOfibS OHB W A P X - Product Specification PowerMOS transistor BUK637-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode