D0345 Search Results

1N5415

Abstract: 1N5415US 1N5416US 1N5417US 1N5420 1N5420US
Contextual Info: MME D MIL SPECS MILS □□□□IBS 0Q3MSbS 2TT i- 1 I INCH-POUND | I_ l | The documentation and process conversion | j measures necessary to comply with this | | revision shall be completed by 1 August 19941

KM44C4004B

Contextual Info: KM44C4004BS CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

Contextual Info: BD950; 952 BD954; 956 _ y v SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic TO-220 envelope. With their n-p-n complements BD949; 951; 953 and 955 they are intended for use in a wide range o f power amplifiers and for switching applications.

Z16C32

Contextual Info: P r e l im in a r y P r o d u c t S pecific a tio n < £ SLO E Z16C32 IU SC I n t e g r a t e d U n i v e r s a l S e r ia l C o n t r o l l e r FEATURES • Two Full-Capacity 20 MHz DMA Channels, Each with 32-Bit Addressing and 16-Bit Data Transfers.

10BASE2

Abstract: 10BASE5 dcuo-0509d PCnet-Family PCI Ethernet Adapter Am79C900
Contextual Info: PRELIMINARY Am79C970 PCnet -PCI Single-Chip Ethernet Controller for PCI Local Bus Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Single-chip Ethernet controller for the Periph­ eral Component Interconnect PCI local bus ■ Supports ISO 8802-3 (IEEE/ANSI 802.3) and

b0951

Abstract: BD951 b0949 B0950 LL90 BD949 BD950 BD953 BD955 IEC134
Contextual Info: BD949; 951 BD953; 955 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic TO-220 envelope. W ith th e ir p-n-p complements BD950; 952; 954 and 956 they are intended fo r use in a wide range o f power amplifiers and fo r switching applications.

980202

Abstract: 5962L9160102HZC ao3454 QML-38534 5962-9160101HXA
Contextual Info: REVISIONS LTR DESCRIPTION DATE Added RadHard and Class K devices. Added RadHard requirements. Redrew entire document, -sld 97-10-29 K.A. Cottongim Table I; Changed the max limit for the output ripple voltage test V ^p for device type 02 from 80 mVp-p to 175 mVp-p. -sld

DD345

Abstract: D0345 5962-8864601XA 5962-8864601NA 5962-8864601UA OM-1850-S-T-M OMNIREL 5962-8864601ua 5962-8864
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add vendor CAGE 69210. Add case outline U. Editorial chanqes throuqhout. 90-09-24 W. J. Johnson B Add case outline N. Editorial chanqes throughout. 96-01-16 M. A. Frye C Changes in accordance with NOR 5962-R104-96.

j1N750A-1

Abstract: 1N6326C MIL-S-19500/533 j1n750a j1N758a 1N759A JANTXV 1N4370A-1 1N4370AUR-1 1N4370C-1 1N4372AUR-1
Contextual Info: MIL SPECS 44E D □ □□□125 0034547 274 » M I L S ! INCH-POUND I | The documentation and process conversion [ measures necessary to comply with this I revision shall be completed by 14 June 1994 MIL-S-19500/127M 14 March 1994 SUPERSEDING MIL-S-19500/127L

KM44C4100BK

Abstract: cd-rom circuit diagram D0345 KM44C4100B
Contextual Info: KM44C4100BK CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a fam ily of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of mem ory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle