DD345 Search Results

947f

Contextual Info: BD943F; BD945F BD947F J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT 186 envelope w ith an electrically insulated mounting base. PNP complements are BD944F, BD946Fand BD948F. QUICK REFERENCE DATA BD943F 94SF 947F

Contextual Info: KM44C4005BS CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Extended Data Out Mode DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.

Contextual Info: Philips Com ponents D a ta sh e e t s ta tu s Product specification d a te o f is s u e Apr# 1991 B D S 61/61A / 61B / 61C NPN silicon Darlington power transistors DESCRIPTION PINNING - SOT223 NPN silicon pow er transistors in a m onolithic Darlington circu it in a

10BASE2

Abstract: 10BASE5 dcuo-0509d PCnet-Family PCI Ethernet Adapter Am79C900
Contextual Info: PRELIMINARY Am79C970 PCnet -PCI Single-Chip Ethernet Controller for PCI Local Bus Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Single-chip Ethernet controller for the Periph­ eral Component Interconnect PCI local bus ■ Supports ISO 8802-3 (IEEE/ANSI 802.3) and

BD844

Abstract: BD840 BD842 BD839 lem HA BD841 BD843
Contextual Info: BD840 BD842 BD844 SILICON PLANAR EPITAXIAL POWER TRANSISTORS P-N-P silicon transistors, in a plastic T0-202 envelope, recommended for use in television circuits and audio applications. N-P-N complements are BD839, BD841 and BD843. Q U ICK R E F E R E N C E D A T A

KM44C4100BS

Contextual Info: KM44C4100BS CMOS D R A M ^ ^ ^ ^ ^ ^ E L E C T R O N IC S 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle