D030B Search Results

BUK454-800A

Abstract: BUK454-800B T0220AB
Contextual Info: N AUER PHILIPS/DISCRETE fc^E D • bb53T31 D030b35 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: ÿ CYPRESS PRELIMINARY W 195B Frequency Generator for Integrated Core Logic Features SDRAM, APIC, 48MHz Output Skew: . .250 ps • Maximized EMI suppression using Cypress’s Spread Spectrum Technology • Low jitter and tightly controlled clock skew

5962-9752701Q3A

Abstract: qml-38535
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 REV STATUS OF SHEETS PMIC N/A REV SHEET 1 2 3 5 4 6 7 8 9 10 11 12 13 PREPARED BY DEFENSE SUPPLY CENTER COLUMBUS Joseph A. Kerby STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE

Contextual Info: N AMER PHILIPS/DISCRETE bR E D bb53T31 □□3Db40 RR1 « A P X Product Specification Philips Semiconductors BUK455-60A/B PowerMOS transistor GENERAL DESCRIPTION Q is n D S O N PARAMETER MAX. MAX. BUK455 Drain-source voltage Drain current (DC) Total power dissipation

Contextual Info: A D V A N C E D MI CR O D E V I C E S 3ÖE D 0 2 5 7 5 2 5 QQ3fit,bö 3 IAMD1 Preliminary Advanced Micro Devices 80C186 CMOS High Integration 16-Bit Microprocessor DISTINCTIVE CHARACTERISTICS • Direct addressing capability to 1 MByte of memory and 64-KByte I/O

mcm6830

Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
Contextual Info: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories

Contextual Info: N AMER P H IL IP S /D IS C R E T E bRE D • bb5 3 R31 DD3 0 b 35 Philips Sem iconductors N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: HARRIS SENICOND S ECTOR H a r r i H3DSS71 Q D 3 ñ b m MbE D IHAS T 82C237 s S E M I C O N D U C T O R CMOS High Performance Programmable DMA Controller February 1992 Features Description • Fully Compatible with Harris 82C37A - 82C237 May be Used in 8MHz and 12.5MHz 82C37A

VHZ 463

Abstract: nsk Crystal 2N41
Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R -B R O W N E INA110 1 INA110 Fast-Settling FET-lnput INSTRUMENTATION AMPLIFIER APPLICATIONS • FAST SETTLING: 4|is to 0.01% • MULTIPLEXED INPUT DATA ACQUISITION SYSTEM • HIGH CMR: 106dB min; 90dB at 10kHz

qpsk modulator chip stanford telecom

Abstract: 39HXC
Contextual Info: <$2¡L0E A d v a n c e In f o r m a t io n S p e c if ic a t io n Z2000 S prea d -S pectrum T r a n s c e iv e r FEATURES BENEFITS • C o m p le te D ire c t S e q u e n c e S p re a d -S p e c tru m Transceiver in a Single CMOS 1C ■ High Performance and High Reliability for Reduced

Contextual Info: MITSUBISHI LSIs <DRAM MODULE MH2V325CJJ-5,-6,-7,-5S,-6S,-7S HYPER PAGE MODE 67108864-BIT 2097152-WORD BY 32-BIT) DYNAMIC RAM DESCRIPTION The MH2V325CJJ is 2097152-word x 32-bit dynamic RAW. This consists of four industry standard 2M x 8 dynamic RAMs in TSOP.

STK 4301

Abstract: STK power amplifier 4301 PIC16F690 PWM c programming PIC16F/LF1946/47 PIC16F1947 pic16lf1947 PIC16F1946 PIC16F690 LED project with assembly language PIC16F194 DS41414B
Contextual Info: PIC16F/LF1946/47 Data Sheet 64-Pin Flash-Based, 8-Bit CMOS Microcontrollers with LCD Driver and nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41414B Note the following details of the code protection feature on Microchip devices:

Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R -B R O W N | B B INA103 | i i I INA103 Low Noise, Low Distortion INSTRUMENTATION AMPLIFIER APPLICATIONS • LOW NOISE: 1nV/VHz • LOW THD+N: 0.0009% at 1kHz, G = 100 • HIGH QUALITY MICROPHONE PREAMPS

100-P

Abstract: BUK456 BUK456-60A BUK456-60B T0220AB dm 369 rv
Contextual Info: N AMER PHILIPS/DISCRETE bTE D bbSBTBl 0030b7D LET • APX Product Specification Philips Semiconductors B U K456-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: N AMER PHILIPS/DISCRETE b^E bbS3T31 003Dbb5 Ebl * A P X D Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: MITSUBISHI LSIs DRAM MODULE MH1M72CTJ-6.-7 FAST PAGE MODE 75497472-BIT(1048576-WORD BY 72-BIT)DYNAMIC RAM DESCRIPTION The MH1M72CTJ is 1048576-word x 7 2 -b it dynamic RAM module. This consists of eighteen industry standard 1M x 4 dynamic RAMs in TSOP and tw o industry standard input

Contextual Info: AMP Card Edge Connectors Board-to-Board, Wire-to-Board Catalog 82619 Revised 8-96 Standard Edge .050 Series Connectors Product Facts Standard Edge .050 Series Connectors • High density .050 [1.27] centerline spacing of contacts ■ Easy mating of high-circuit

Contextual Info: CYPRESS PRELIMINARY W199 Spread Spectrum FTG for VIA Apollo Pro-133 Features Table 1. Mode Input Table • Maximized EMI suppression using Cypress’s Spread Spectrum Technology • Single-chip system frequency synthesizer for VIA Apollo Pro-133 Pin 2 PCLSTOP#

BUK582-100A

Contextual Info: N AUER p HT/l IPS/EISCRETE b'iE ]> • 1^53^31 ÜD3DÛ4Ô T44 * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK582-100A Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode