D0172 Search Results

Contextual Info: b E M S ô ET D0172bG THT • MITSUBISHI RF POWER MODULE M57786L1 380-400MHZ, 7.2V, 7W, FM PORTABLE RADIO BLOCK DIAGRAM Dimensions in mm OUTLINE DRAWING 45 ± 0 .5 42±1 2 -R 1 .6 ± 0 .5 ¥ ■€ CD D (D ¿0.4 ± 0.2 5+ 1 9+ 1 9±1 5±1 PIN : CDPin

TLG4375

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 T O S H IB A TLG2370 ^ < D IS C R E T È /O P T O TLG2380 99D TLG4 3 7 5 TDTTESO D0172ÖE 17262 D T -„ M \-3 3 TLG4385 9 Green Color, 6.3 ion Character Height and Pin Connections for Multiplex Drive. • Even Digit Space

Contextual Info: MITSUBISHI RF POWER MODULE b 2 4 ci ß 2 ci D017222 13b • _ M57764 806-825MHZ, 12.5V, 20W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm B LO C K DIAGRAM PIN : Pin © VCCI @VCC2 @ VCC3 PO © G ND : RF INPUT : 1st. DC S U P P LY : 2nd. DC S U PPLY

AB26S

Abstract: 7C109A CY7C109 CY7C109A
Contextual Info: CY7C109A PRELIMINARY l ^wSSQBBSf S S ySSt Ì p YJe JkP XRI- XjiïJF ^ 128KX 8 Static RAM Features Functional Description • H ighspeed The CY7C109A is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable

l 7251 wd

Abstract: nte CROSS-REFERENCE CTL2S l 7251 3.1 SPNS014 LT 7207 TMS370 SPNS014B 27282930 SPNSQ33B
Contextual Info: TMS370Cx6x 8-BIT MICROCONTROLLER SPNSQ33B - SEPTEMBER 1995 - REVISED MARCH 1996 1 CMOS/EEPROM/EPROM Technologies on a Single Device - Mask-ROM Devices for High-Volume Production - One-Time-Programmable OTP EPROM Devices for Low-Volume Production - Reprogrammable EPROM Devices for

Contextual Info: PRELIMINARY I TECHNOLOGY. INC. 64Kx 16/18 SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 4 .5 ,5 ,6 ,7 ,8 and 9ns Fast OE# access time: 4.5,5 and 6ns

Contextual Info: ADVANCE 256K • • • • • • • • • Fast access times: 4.5,5,5.5,6 and 7ns Fast OE# access time: 4.5,5,5.5 and 6ns +3.3V +0.3V/-0.165V power supply Vcc Separate +2.5V +0.4V/-0.125V isolated output buffer supply (VccQ) 3.3V-tolerant inputs SNOOZE MODE for reduced power standby

Contextual Info: ADVANCE fUHf— p a n i s i 1 MT58LC64K32/36E1 6 4 K x 32/36 SYNCBURST SRAM +3.3V SUPPLY, 2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • • Fast access times: 8.5,9,10,11 and 12ns

Contextual Info: ADVANCE MT58LC128K32/36F1 128K X 32/36 SYNCBURST SRAM |U |IC R O N 128K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View

Contextual Info: Transistors Digital Transistor Isolated Dual Digital Transistors UMH3N / IMH3A •E x te rn a l dim ensions (Units: mm) • F e a tu re s 1) T w o D T A K 13 T in U M T an d SM T IMH3A UMH3N packages. 2.0 ± 0.2 2) M o u n tin g p o s s ib le w ith UM T3 o r

Contextual Info: ADVANCE MT58LC128K32/36G1 128K X 32/36 SYNCBURST SRAM TECHNO OC.Y. ¡MC 128K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES • • • • • • • • • • • • • • • •

Contextual Info: ADVANCE 128K • • • • • • • • • Fast access times: 4.5,5,5.5,6,7ns Fast OE# access time: 4.5,5,5.5 and 6ns +3.3V +0.3V/-0.165V power supply Vcc Separate +2.5V +0.4V/-0.125V isolated output buffer supply (VccQ) 3.3V-tolerant inputs SNOOZE MODE for reduced power standby

Contextual Info: SUPERSEDED BY MT58LC64K18D8 I^IICRDN 64K OPTIONS A6 A7 CE# CE2 NC NC WEH# WEL# CE2# Vcc Vss CLK GW# BWE# OE# ADSC# ADSP# ADV# A8 A9 100-Pin TQFP SA-1 RRRRRRRRRRRRRRRRRRRR • Packages 100-pin TQFP VccQ ra n DQ12 vcc Vcc Nc Œ c n en c n c n DQ13 DQ14 VccQ

Contextual Info: ADVANCE M im a N I i i i - . i - i i - j i 'v MT3LST3264 P , MT5LST6464(P) 32K, 64K x 64 SYNCHRONOUS SRAM MODULE 32K, 64K x 64 SRAM SYNCHRONOUS SRAM MODULE with Tag RAM 256KB/512KB, 3.3V, FLOW-THROUGH OR PIPELINED SYNCHRONOUS BURST, SECONDARY CACHE MODULES

Contextual Info: Data Sheet May 1995 S t AT&T r Microelectronics DSP1610 Signal Coding Digital Signal Processor 1 Features 2 Description • 25 ns or 33 ns instruction cycle ■ 512 word boot ROM, and 4 Kword or 8 Kword downloadable dual-port RAM on-chip ■ Low-power (15 mW/MIPS typical)

Contextual Info: f flT N l{ HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM dt IDT7006S/L Integrated DevIce Technology, Inc. M/S = L for BUSY input on Slave • Interrupt Flag • On-chip port arbitration logic • Full on-chip hardware support of semaphore signaling between ports

Contextual Info: ggiNf HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM :| d f / IDT7005S/L Integrated Device Technology, Inc. FEATURES: • True Dual-Ported m em ory cells which allow sim ulta­ neous reads of the sam e m em ory location • High-speed access — Military: 25/35/55/70ns max.

TA7362P

Abstract: 16-SUPPLY ta7362 je 371 Transistor muting
Contextual Info: TOSHIBA-, 9 09 72 47 ELECTRONIC DE DËJ Ttm EM ? T O S H I B A . E L E C T R O N IC 02E QD17E11 5 17211' T -77-2.1 TA7362P MUTING 1C Unit in mm 23.0 MAX The TA7362P is a muting IC to prevent the ."POP" noise made at time of power ON-OFF of car audio equipment,

Contextual Info: PRELIMINARY |U |IC R O N 64K MT58LC64K16/18B3 16/18 SYNCBURST SRAM 64K x 16/18 SRAM +3.3V SUPPLY, FLOW-THROUGH AND BURST COUNTER FEATURES • • • • • • • • • • • • • • • • Fast access times: 8.5,9,10,11 and 12ns Fast OE# access times: 5 and 6ns

Contextual Info: Transistors Digital Transistor Isolated Dual Digital Transistors UMH10N / IMH10A •External dimensions (Units: mm) UMH10N IMH10A 2.o±o.a 2 .9 ± 0 .2 D D 0.7 Ml (3) [jlw [jlts> [pi ra I 0.2±0.1 I I I . (4) B ttl(3)ti](2)til(U I (5) (6) 0 .1 5 ± 0 .0 5

Contextual Info: ADVANCE 128K • • • • • • • • • PIN ASSIGNMENT Top View 100-Pin TQFP Fast access times: 4 .5 ,5 ,6 ,7 ,8 and 9ns Fast OE# access time: 4.5,5 and 6ns Single +3.3V +10%/-5% power supply SNOOZE MODE for reduced power standby Common data inputs and data outputs

Contextual Info: SUPERSEDED BY MT58LC64K18C5 MT58LC64K18C4 64K X 18 SY N C BU R ST SRAM MICRON I 'ECIIMOIOGY tHC 64K x 18 SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • P IN A S S IG N M E N T T o p V ie w

Contextual Info: ADVANCE MICRON * 64K MT58LC64K32/36D8 32/36 SYNCBURST SRAM 64K x 32/36 SRAM +3.3V SUPPLY, PIPELINED, SINGLE-CYCLE DESELECT AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • • Fast access times: 4.5 ,5 ,6 ,7 ,8 and 9ns

Contextual Info: 4 MEG x 4 EDO DRAM MICRON TECHNOLOGY. INC. lì R A M L S r T M IV I MT4LC4M4E8, MT4C4M4E8 MT4LC4M4E9, MT4C4M4E9 FEATURES PIN ASSIGNMENT Top View • Industry-standard x4 pinout, timing, functions and packages • State-of-the-art high-performance, low power CMOS