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    D MARKING Search Results

    D MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2910/BQA
    		Rochester Electronics LLC 2910 - Microprogram Controller - Dual marked (7801701QA) PDF Buy
    MQ80C186-12/BYA
    		Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) PDF Buy
    54L04/BDA
    		Rochester Electronics LLC 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) PDF Buy
    9936/BCA
    		Rochester Electronics LLC 9936 - Hex Inverter - Dual marked (M38510/03003BCA) PDF Buy
    54AC86/SDA-R
    		Rochester Electronics LLC 54AC86/SDA-R - Dual marked (M38510R75202SDA) PDF Buy

    D MARKING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1212CN

    Contextual Info: VIEW ON MATING SIDE —— L1 — - ^ ROW E D C B A L2 1 C C D E D <5ZZ MARKING PERFO RM ANC E L E V E L F L U X PROOF LUBRICATION DIMENSIONS TECHNICAL D A T A 2 3 4 C C C C C C D D D E E E D D D PIN Q U AN TITY 5 C C D E D 6 C C D E D PIN 6 6 6 6 6 =30 STANDARDS


    OCR Scan     		sd-85801-008ps-85801-002sd-85801-0101290f+11212cn PDF

    1206-8

    Abstract: Si5402BDC
    Contextual Info: Si5402BDC New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.7 0.042 @ VGS = 4.5 V 6.1 D 1206-8 ChipFETr 1 D D D D D D G G S Marking Code AD XXX Lot Traceability


    Original     		si5402bdcsi5402bdc-t1--e308-apr-051206-8 PDF

    1206-8

    Abstract: marking code AD Si5402BDC
    Contextual Info: Si5402BDC New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.7 0.042 @ VGS = 4.5 V 6.1 D 1206-8 ChipFETr 1 D D D D D D G G S Marking Code AD XXX Lot Traceability


    Original     		si5402bdcsi5402bdc-t1--e3s-41495--rev09-jun-04+21206-8marking code ad PDF

    Si5402BDC

    Contextual Info: Si5402BDC New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.7 0.042 @ VGS = 4.5 V 6.1 D 1206-8 ChipFETr 1 D D D D D D G G S Marking Code AD XXX Lot Traceability


    Original     		si5402bdcsi5402bdc-t1--e318-jul-08 PDF

    1N4148 75V 150mA Diodes

    Abstract: 1n4148 1N4148.1N4448 free download datasheet 1N4148 1N4448
    Contextual Info: 1N4148 & 1N4448 Fast Switching Diode Features: D Fast Switching Speed D General Purpose Rectification D Silicon Epitaxial Planar Construction Mechanical Data: D Case: DO-35 D Leads: Solderable per MIL-STD-202, Method 208 D Polarity: Cathode Band D Marking: Type Number


    Original     		1n41481n4448do-35mil-std-202+4100ma1n4148 75v 150ma diodes1n4148.1n4448free download datasheet 1n4148 PDF

    1N4148 75V 150mA Diodes

    Abstract: 1N4148 75v 150mA diode 1n4148 1N4148 75V 150mA 500mW 1N4148 diode data sheet 1N4148.1N4448 1N4448
    Contextual Info: 1N4148 & 1N4448 Fast Switching Diode Features: D Fast Switching Speed D General Purpose Rectification D Silicon Epitaxial Planar Construction Mechanical Data: D Case: DO−35 D Leads: Solderable per MIL−STD−202, Method 208 D Polarity: Cathode Band D Marking: Type Number


    Original     		1n41481n4448do-35mil-std-202+6100ma1n4148 75v 150ma diodes1n4148 75v 150ma diode1n4148 75v 150ma 500mw1n4148 diode data sheet1n4148.1n4448 PDF

    SI5435BDC

    Abstract: Si5435BDC-T1
    Contextual Info: Si5435BDC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.045 @ VGS = −10 V −5.9 0.080 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFETS 1206-8 ChipFETr S 1 D D G D D D D G S Marking Code


    Original     		si5435bdcsi5435bdc-t1--e318-jul-08si5435bdc-t1 PDF

    SI5435BDC

    Contextual Info: Si5435BDC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.045 @ VGS = −10 V −5.9 0.080 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFETS 1206-8 ChipFETr S 1 D D G D D D D G S Marking Code


    Original     		si5435bdcsi5435bdc-t1--e3s-41887--rev18-oct-04 PDF

    Si5435BDC-T1

    Abstract: SI5435BDC
    Contextual Info: Si5435BDC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.045 @ VGS = −10 V −5.9 0.080 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFETS 1206-8 ChipFETr S 1 D D G D D D D G S Marking Code


    Original     		si5435bdcsi5435bdc-t1--e308-apr-05si5435bdc-t1 PDF

    SI5402DC

    Contextual Info: Si5402DC New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V "6.7 0.055 @ VGS = 4.5 V "5.3 D 1206-8 ChipFET 1 D D D D D D G G Marking Code S AA XX Lot Traceability and Date Code S Part # Code


    Original     		si5402dcs9926715-nov-99 PDF

    Si5404BDC

    Contextual Info: Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code


    Original     		si5404bdcsi5404bdc-t1--e308-apr-05 PDF

    Si5404BDC

    Contextual Info: Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code


    Original     		si5404bdcsi5404bdc-t1--e318-jul-08 PDF

    S 71062

    Abstract: Si5402DC MARKING CODE AA S9926
    Contextual Info: Si5402DC New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V "6.7 0.055 @ VGS = 4.5 V "5.3 D 1206-8 ChipFET 1 D D D D D D G G S Marking Code AA XX Lot Traceability and Date Code S Part # Code


    Original     		si5402dcs-99267--rev15-nov-99s 71062+2marking code aas9926 PDF

    MARKING CODE AA

    Abstract: Si5402DC Vishay DaTE CODE 1206-8 Si5402DC-T1
    Contextual Info: Si5402DC Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.035 @ VGS = 10 V 6.7 0.055 @ VGS = 4.5 V 5.3 D 1206-8 ChipFETt 1 D D D D D D G G S Marking Code AA XX Lot Traceability and Date Code S Part # Code


    Original     		si5402dcsi5402dc-t1s-21251--rev05-aug-02+2marking code aavishay date code 1206-8 PDF

    SI5402DC

    Contextual Info: Si5402DC Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V "6.7 0.055 @ VGS = 4.5 V "5.3 D 1206-8 ChipFETt 1 D D D D D D G G S Marking Code AA XX Lot Traceability and Date Code S Part # Code Bottom View


    Original     		si5402dcsi5402dc-t108-apr-05 PDF

    Si5402DC

    Abstract: Si5402DC-T1
    Contextual Info: Si5402DC Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V "6.7 0.055 @ VGS = 4.5 V "5.3 D 1206-8 ChipFETt 1 D D D D D D G G S Marking Code AA XX Lot Traceability and Date Code S Part # Code Bottom View


    Original     		si5402dcsi5402dc-t1s-21251--rev05-aug-02 PDF

    Si5404BDC-T1-E3

    Abstract: SI5404BDC
    Contextual Info: Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code


    Original     		si5404bdcsi5404bdc-t1--e3s-41826--rev11-oct-04+1si5404bdc-t1-e3 PDF

    SI5461EDC

    Contextual Info: Si5461EDC New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V –6.2 –20 0.060 @ VGS = –2.5 V –5.4 0.082 @ VGS = –1.8 V –4.6 1206-8 ChipFET S 1 D D D D D D G S Marking Code LA


    Original     		si5461edcs-03083--rev12-feb-01 PDF

    Si5475DC

    Abstract: S0233
    Contextual Info: Si5475DC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.031 @ VGS = –4.5 V –7.6 0.041 @ VGS = –2.5 V –6.6 0.054 @ VGS = –1.8 V –5.8 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code BF XX


    Original     		si5475dcs-02332--rev23-oct-00s0233 PDF

    Si5435DC

    Abstract: Si5435DC-T1
    Contextual Info: Si5435DC Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (Ω) ID (A) 0.050 @ VGS = -10 V -5.6 0.080 @ VGS = -4.5 V -4.0 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BE XX Lot Traceability and Date Code Part # Code


    Original     		si5435dcsi5435dc-t1s-21251--rev05-aug-02 PDF

    Si5465EDC

    Abstract: siliconix
    Contextual Info: Si5465EDC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.037 @ VGS = –4.5 V –7.0 0.048 @ VGS = –2.5 V –6.1 0.065 @ VGS = –1.8 V –5.2 S 1206-8 ChipFET 1 D D G 5.4 kW D D D D G S Marking Code


    Original     		si5465edcs-03912--rev21-may-01siliconix PDF

    Si5435DC

    Abstract: 41AR Si5435DC-T1
    Contextual Info: Si5435DC Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (Ω) ID (A) 0.050 @ VGS = -10 V -5.6 0.080 @ VGS = -4.5 V -4.0 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BE XX Lot Traceability and Date Code Part # Code


    Original     		si5435dcsi5435dc-t108-apr-0541ar PDF

    Contextual Info: Si5465EDC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.037 @ VGS = –4.5 V –7.0 –12 0.048 @ VGS = –2.5 V –6.1 0.065 @ VGS = –1.8 V –5.2 1206-8 ChipFET S 1 D D D D D D G S Marking Code 5.4 kW


    Original     		si5465edcs-03191--rev12-mar-01 PDF

    Contextual Info: Si5435DC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.050 @ VGS = –10 V –5.6 0.080 @ VGS = –4.5 V –4.0 –30 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code BE XX Lot Traceability and Date Code


    Original     		si5435dcs-00233--rev21-feb-00 PDF