D 998 TRANSISTOR CIRCUIT Search Results

transistor Bs 998

Contextual Info: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 F e a tu re s • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz 5:1 Type B F 998 M arking MO O rd ering C o d e tape and reel 1 Q 6 2 7 0 2 -F 1 129

Contextual Info: 33E D • Ô23b350 001bô30 1 M S I P Silicon N-Channel MOSFET Tetrode BF 998 SIEMENS/ SPCL-, SEMICONDS • Short-channel transistor w ith high S /C quality factor • For low-noise, gain-controlled input stages up to 1 GHz T -3 I-2 S ' Type M arkin g O rd erin g coda

2SC998

Abstract: 2sc998 transistor 10N40 0F34 Toshiba 2SC998
Contextual Info: 5; ' J D y N P N I t i 5 > * = y J , U 7 L s - ï B h 5 y S ; Z 5 > SILICON NPN EPITAXIAL PLANAR TRANSISTOR O 1 5 0 ~ 1 7 5MHz * 2 s c 998 ) o VHF Power Amplifier Application (Low Supply a f i l i é INDUSTRIAL APPLICATIONS Vo 11age Use) ° Un it: mm Land-Mobile Power Amplifier and Frequency

Contextual Info: MITSUBISHI HVIGBT MODULES CM800HB-66H somB HIGH POWER SWITCHING USE INSULATED TYPE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules APPLICATIO N Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM

6r280e6

Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R280E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R280E6, IPA60R280E6

Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R190E6 Data Sheet Rev. 2.0, 2010-05-03 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R190E6, IPA60R190E6

6R190E6

Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R190E6 Data Sheet Rev. 2.0, 2010-05-03 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R190E6, IPA60R190E6

6r280e6

Abstract: 6R280E
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R280E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R280E6, IPA60R280E6

Contextual Info: S IE M E N S Silicon N Channel M O SFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 G H z Type Marking Ordering Code tape and reel Pin Configuration 1 2 4 3 B F 998

6R380E6

Abstract: id48
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R380E6, IPA60R380E6

Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R520E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R520E6, IPA60R520E6

6R190E6

Abstract: TO-247 FULLPAK Package IPA60R190E6 IPP60R190E6 IPW60R190E6 JESD22 6r190 6r190e
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R190E6 Data Sheet Rev. 2.0, 2010-05-03 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R190E6, IPA60R190E6

6R190E6

Abstract: 6R19 6r190 6r190e IPA60R190E6 IPA60R190 IPP60R190E6 IPW60R190E6 JESD22
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R190E6 Data Sheet Rev. 2.0, 2010-05-03 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R190E6, IPA60R190E6

6R280E6

Abstract: IPA60R280E6 IPP60R280E6 IPW60R280E6 6r280 JESD22
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R280E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R280E6, IPA60R280E6

6R520E6

Abstract: IPA60R520E6 JESD22
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R520E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R520E6, IPA60R520E6

6R280E6

Abstract: IPA60R280E6 IPP60R280E6 IPW60R280E6 JESD22
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R280E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R280E6, IPA60R280E6

6R600E6

Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.0, 2010-04-12 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPD60R600E6, IPP60R600E6

smd transistor 8c

Abstract: Diode SMD SJ 8C 6R160C6 transistor SMD 2h TRANSISTOR SMD MARKING CODE m3 IPA60R160C6 IPB60R160C6 IPP60R160C6 IPW60R160C6 JESD22
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R160C6, IPB60R160C6

6R600E6

Abstract: diode smd E6 to252 footprint wave soldering infineon marking TO-252 IPA60R600E6 IPD60R600E6 JESD22 marking code ll SMD Transistor Diode SMD SJ 19
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.0, 2010-04-12 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPD60R600E6, IPP60R600E6

Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet 2010-04-12 Rev. 2.0, 2.1, 2013-07-31 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPD60R600E6, IPP60R600E6

6R380E6

Abstract: 6r380
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R380E6, IPA60R380E6

Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R380E6, IPA60R380E6

6R190

Abstract: 6R190C6 6r190c IPW60R190
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6

smd transistor 8c

Abstract: 6R160C6 SMD TRANSISTOR MARKING 2h marking code ll SMD Transistor Diode SMD SJ 8C IPA60R160C6 IPB60R160C6 IPP60R160C6 IPW60R160C6 JESD22
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R160C6, IPB60R160C6