D 92 M 03 DIODE Search Results

BC547 sot package sot-23

Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

MMBF4856

Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

Contextual Info: PD 9.1462A International IOR Rectifier IRG4PC30UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

KE 10A DIODE

Contextual Info: TS802C09< ioa SCHOTTKY BARRIER DIODE Features • »»*#1*^116 Surface mount device. • 1fcVF Low VF • X-f Xl£-KA *#*i:3fc\,' Super high speed switching. •w s& s* Connection Diagram • TV-*- Jt t f t f l MRt t High reliability by planer design. ■ £ ! & : Applications

ESAB82-004

Abstract: ESAB82M-004 ESAB82M-006 ESAB85-009 KP823C04 KS823C04 TP801C04 TP801C06 YG801C04 YG801C06
Contextual Info: Schottky-Barrier Diodes Dual package Ratings and characteristics Type M axim um ratin§ V lo rrm Volts KS823C04 40 KP823C04 40 40 If s h # 2 *1 Am ps. Am ps. 5.0 Tc=87°C 5.0 Tc=87°C) 5.0 Tc=103°C) Therm al rating Tj and Tstg °c -40 t o +125 Characteristics Ta=25°C)

HFA140NH60R

Abstract: IRFP250
Contextual Info: PD -2.446 rev. B 03/99 HFA140NH60R HEXFRED Ultrafast, Soft Recovery Diode TM LUG TERMINAL CATHODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters a d BASE ANODE VR = 600V VF typ. ƒ = 1.3V IF(AV) = 140A

HFA140NH60

Abstract: IRFP250
Contextual Info: PD -2.447 rev. B 03/99 HFA140NH60 HEXFRED Ultrafast, Soft Recovery Diode TM LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters a d BASE CATHODE V R = 600V V F typ. ƒ = 1.3V IF(AV) = 140A

Contextual Info: YG802C N 09 uoa) SCHOTTKY BARRIER DIODE •¡NHIc : Features • lfc w 11 # *e us £ t i t-.7 1\ , K ? -f 7 I nsul at ed packa g e by fu lly m o ld in g . • te V F IM tttt C onnection Diagram Low V k • X 'f S u p e r h ig h speed s w itc h in g . •

UDZ2.0B

Contextual Info: Formosa MS SMD Zener Diode UDZ2.0B THRU UDZ36B List List. 1 Package outline. 2 Features. 2

SMD ZENER DIODE 243

Contextual Info: Formosa MS SMD Zener Diode UDZ2.0B THRU UDZ36B List List. 1 Package outline. 2 Features. 2

AM B8 202

Abstract: FM receiver integrated circuit automatic tune rf mixer 200-250 mhz SMU FM IC C111 U4255BM-B U4255BM-M U4256BM
Contextual Info: Features • • • • • • • • • • FM Double-conversion System Integrated Second IF Filter with Software-controlled Bandwidth Completely Integrated FM Demodulator Soft Mute and Multipath Noise Cancellation Receiving Condition Analyzer AM Up/Down-conversion System

Contextual Info: I ^R INTERNATIONAL 4Ö55455 ooioam 4 RECTIFIER R 38B S E R I E S 3 40 0 - 2 8 0 0 VOLTS RANGE 1 0 4 0 A M P A V G H O C K E Y PUK DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE : i PAHT ; NUHBgR s W Vfl - VI Max* r«pg paak ravara« and dlraoft voltaga • i

IRF7523D1

Contextual Info: PD- 91647C IRF7523D1 FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = 30V

IN3883

Abstract: ESM 244-600 3912 esm diodes Diodes de redressement
Contextual Info: Fast recovery silicon rectifier diodes — t rr 2 0 0 ns D iodes de redressement rapides au siliciu m — trr 2 0 0 ns VF Case T <vj> °C io 'fsm (A) max Tease 100 °C tp 10 ms / (V) lp (A) IR ! V R R M (mA) 25 °C T (vj) 1 0 0 ° C trr' (ns) D R T 76 max

Diode 1N41

Abstract: N4113 1N41 N4624 tsf41 M4625
Contextual Info: em i Corp. The ótode experts SCOTTSDALE, A Z F o r m o re in fo rm a tio n call: <602 941-6300 1N 4099 thru 1N 4135 and 1N 4614 thru 1N 4627 D O -7 FEATURES SILICON 4 0 0 mW LOW NOISE ZENER DIODES • Z EN ER VOLTAGE 1.8V to 100V • A LL HAVE JA N , JA N T X and JA N T X V -1 QUALIFICATIONS TO MIL-S-19500/435

1B50

Abstract: THC-1500 lrk9 20as15
Contextual Info: Bulletin 127132 rev. D 09/97 International ISR Rectifier IRK.71, .91 SERIES THYRISTOR/ DIODE and THYRISTOR/THYRISTOR NEWADD-A-pak Power Modules Features • Electrically isolated: DBC base plate ■ 3500 VRMS isolating voltage ■ Standard JED EC package

am/zener bzx 5v6

Contextual Info: SLE D • 7^2=1237 0041504 S7T ■ S G T H rz 7 SCS-THOMSON s 4 ^-THOMSON T-11 - JI ^ 7# MeamiefiBitBiMes BZX 84 C 2V4 —» 75 ZENER DIODES D E S C R IP T IO N 350mW voltage regulator diodes designed for hy­ brid microcircuits and providing low dynamic resi­

BYV32F

Abstract: BYV32F-50
Contextual Info: BYV32F SERIES T -03-1 7 PHILIPS INTERN A T I O N A L SbE J> 711002b J V_ 00413bfl âlfl • PHIN ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in SOT-186 full-pack plastic

t593

Contextual Info: PRELIMINARY DATASHEET NO. PD-9.796 International iipRi R e c tifie r_ ir g b c 30 u d 2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT • Latch-proof • Simple gate drive • High operating frequency

J1 3009

Abstract: j1 3003 KL SN 102 w1 3005 1N4150 j3003 ci dtl 302
Contextual Info: r f' ^ > IQUALIFICATION I IREQUIREMENTS I I REMOVED I M I L - M - 3 8 5 10/33 30 June 1975 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, D T L , FLIP FLOPS, MONOLITHIC SILICON I I N A C T I V E F OR NEW D E S I G N A F T E R D A T E OF T H I S REVISIONj This specification is approved for use by all D e p a r t ­

Contextual Info: PD-2.446 bïtemational S Rectifier HFA140NH60R HEXFREDT Ultrafast, Soft Recovëry Diode LUG TERM INAL CATHO DE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters Vr 600V = Vf = 1.6V A i Qrr * = 1400nC

Contextual Info: PD-2.447 International SRectifier HFA140NH60 Ultrafast, Soft Recovfery Diode HEXFRED" LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V R = 600V ? T V f = 1.6V Q rr* = 1 4 0 0 n C

Contextual Info: PD-2.445 International ¡k?r]Rectifier HFA280NJ60C Ultrafast, Soft Recovery Diode HEXFRED LUG TERM INAL A NO D E 1 Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG TERMINAL ANODE 2 V r = 600V

IN 5821

Contextual Info: 013700^ O D O ü n O T O S L C B 43E D SEMITRON INDUSTRIES LTD - T - Q - 3 .- I 3 RECTIFIERS Schottky Barrier Rectifiers Operating/Storage Temperature Range -6 5 C - 150 C Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load