A456 Search Results

N565

Abstract: C741 017A2 E5819
Contextual Info: @?85,A *;5:5*B.): 0)C6=56'*+$$+ !"#$$%&' )*+$*,-*&./,%0/1-2*34567)*!58)1),9:.%;/8/7/4, <=1:/(1)>)67*5,?*;)-=1:/(1)>)67 @(1/A5:/4,7 • ;<=>('5*&,:0,02& ■ ;<=>7)*,$+(*+?+52.(:@%'0.%$"0&1 ■ <*A$%$&1'-7,$%$#'0A$(52@'0&1 ;)7A6/(:/4, &.)*!"#$$%:'()*+$*,-*:./,%D/1-*D/1:)62*A4567)*E58)1),9:.%

HC-45

Abstract: XT042
Contextual Info: CONNOR—WINFIELD CORPORATION H C 4 5 /U CRYSTAL UNIT AURORA, IL. 60505 PHONE 630 851-472 2 FAX (630) 851 -5 0 4 0 A456FEF0— 20 SPECIFICATIONS Frequency (Fo) Frequency Tolerance (at 25’ C) Temperature Stability Operating Temperature Range Mode Shunt Capacitance (Co)

Contextual Info: bel/defining a degree of excellence PULSE WIDTH GENERATOR SER IES A456 TTL COMPATIBLE TECHNICAL INFORMATION TEST CONDITIONS Pulse Vbltage Rise Time Pulse Width Pulse Period 3.2 Vblts 3.0 Nsec 10%-90% 10 Nsec 4 x Output Pulse Width Supply Current 60.0 Milliamps

Contextual Info: bel/ defining a degree of excellence PULSE WIDTH GENERATOR SERIES A456 TTL COMPATIBLE TECHNICAL INFORMATION 285 MAX. TEST CONDITIONS Pulse Voltage Rise Time Pulse Width Pulse Period 3.2 Vblts 3.0 Nsec 10%-90°/o 10 Nsec 4 x Output Pulse Width 60.0 Milliamps

QT33

Abstract: 143-E BD 7954 12635 13579
Contextual Info: *+*,-+./01234567189: 1'#$ +4;<6=4>?641;@5@?A456>A6?6 BCB3DEF1'3127321##217 CBC3DEF1'3127321##217 4%4 &3D ' ‰q3Š3T3Š33 ‹ PD8F21 1444E&345371 D P QQ894E&34531754   33 33 33T 33 33T 33 33

XT042

Contextual Info: CONNOR-WINFIELD CORPORATION AURORA, IL. 60505 PHONE 63 0 8 5 1 -4 7 2 2 FAX (630) 8 5 1 -5 0 4 0 H C 4 5 / U CRYSTAL UNIT A456FEF0— 20 SPECIFICATIONS Frequency (Fo) Frequency Tolerance (a t 25'C) Tem perature S tability Operating Tem perature Range Mode

HA12003

Abstract: 6x40 lcd transistor a226 BU45584 BU4558 A226 transistor monostable multivibrator using cmos 8ch pnp DARLINGTON TRANSISTOR ARRAY BA3922 ba3916
Contextual Info: Standard ICs Operational am plifier /c o m p a ra to r •Operational amplifier BA14741/F ± 2 — ±18 B A4558/F/N ± 4 — ±18 B A728/F/N ± 2 — ±16 BA15532/F/N ± 3 — ±20 BA4510F ± 1 — ±3 .5 B A4560/F/N ± 4 — ±18 Oi Offset voltage mV 2

TC5116160

Abstract: A461
Contextual Info: T O S H IB A TC5116160AI/AFT-60/70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5116160AJ/AFT is the new generation dynam ic RAM organized 1,048,576 w ord by 16 bit. The TC5116160AJ/AFT utilizes T oshiba's CM OS silicon gate process technology as well as advanced circuit

TC511664BJl

Abstract: toshiba TC511664BJL TC511664
Contextual Info: T EN TA TIV E D A TA 65,536 W O R D x 16 BIT D Y N A M IC RAM DESCRIPTION T: '1'Call SG4TUL/EZL is the new generation dynamic RAM organized 65,536 words by 16 bits. The lc3 ibJL/'BZL utilizes TOSHIBA'S CMOS Silicon gate process technology as well as advanced

Contextual Info: 1 0 4 8 ,5 7 6 W O R D x PRELIMINARY 4 BIT D Y N A M IC R A M DESCRIPTION The TC514402AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514402AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

sandisk eMMC 4.41

Abstract: toshiba emmc 4.4 spec SANDISK inand Samsung eMMC 4.41 sandisk emmc 4.5 bcm 4330 programming Guide Sandisk iNAND eMMC toshiba emmc 4.4 linux toshiba emmc 4.4.1 spec sandisk inand extreme emmc
Contextual Info: An addendum for this document is available. See Document ID#: IMX25RMAD. i.MX25 Multimedia Applications Processor Reference Manual Supports i.MX251 MCIMX251 i.MX253 (MCIMX253) i.MX255 (MCIMX255) i.MX257 (MCIMX257) i.MX258 (MCIMX258) IMX25RM Rev. 1 06/2009

Contextual Info: TENTATIVE DATA 65,535 WORD x 15 BIT DYNAMIC RAM D E S CRIPTION T b e T C S l l GkW BJL'BZL is the new g e n e ra tio n dyna^nic R A M o rg an ize d 6 5 ,536 w ords by 16 b its. The T C £ t J6 6 4 0 JL /3 Z .L u tilize s T O S H IB A 'S C M O S S ilic c r. p:.te p rocess tech n ology as weii a s ad van ced

marking A4

Abstract: A4-241J A4-100K A4-150K A4-R15K A4-R22K A4-R33K A4-R47K A4-R56K
Contextual Info: 98 SPECIFICATIONS AXIAL MOLDED RF INDUCTOR SERIES A4 FEATURES - Meets all requirements of MIL-C-15305 - Sturdy construction - High reliability, uniform in size, ideal for auto insertion - Precision performance ELECTRICAL CHARACTERISTICS - Inductance range

a1277

Abstract: a968 a1684 B41822 b43822 A4108 A1567 A1474 a933 B41835
Contextual Info: Single Ended GP - Capacitors B 41821 Standard Series - 85°C B 43821 Construction Radial leads Charge-discharge proof, polar Aluminum case, insulating sleeve Minus pole marking on case surface Stand off rubber seal Features Miniaturized dimensions High CV product, i.e. Very compact

M1217

Abstract: din 439 b
Contextual Info: Capacitors with Screw Terminals B 43 456 85 °C B 43 458 B 43 456, B 43 458 LL grade Compact high-voltage type For professional power supplies Construction • Charge-discharge proof, polar ■ Aluminum case with insulating sleeve ■ Poles with screw terminal connections

TDA4565

Abstract: TDA4555 TDA4650 TDA4670 TDA4680 TDA4685 TDA4686 TDA4686WP 12C-bus 15354 time switch
Contextual Info: b3E D NAPC/PHILIPS SEMICOND • ^53*124 D07Ö4MM 411 W Ë S I C 3 Preliminary specification Philip* Sem iconductor* Video Products Video processor, with automatic cut-off control FEATURES TDA4686 • Cut-off measurement pulses after end of the vertical blanking pulse or end of an

YG835C03R

Contextual Info: YG835C03R 30V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2

8C740

Contextual Info: 123456789AB8CDEF E 6  8B8 66 2 667 SSC Drawn Customer Approval Approval 123456466 7898AB8145C6D64 EEE4F24 서식번호 : SSC- QP- 7- 07- 24 Rev.00 123456789AB8CDEF E 6  8B8 66 667 1. Description 2. Absolute Maximum Ratings

transistor c4108

Abstract: C4108 C4108M a539 c4108 datasheet equivalent of transistor c4108 A4108 c4108 transistor C5108 IEC 68-2-6
Contextual Info: Capacitors with 4 Snap-In Terminals and Solder Pins 85 °C B 43 511 B 43 521 LL grade Especially high volumetric efficiency Construction ● ● ● ● Charge-discharge proof, polar Aluminum case, fully insulated Overload protection by preset break point in case

1332L

Abstract: BA6919FP-Y a7356 7657F A7657S 3842F BA3838F 8206F 7046F 6208F
Contextual Info: Optical disc ICs/Magnetic disk ICs Products List Optical disc IC/Magnetic disk 1C Products List The data fo r Rohm m onolithic and hybrid ICs are pub­ lished in seven different volum es separated by classifi­ cation. •M e m o ry/S ta nd a rd ICs •R e g u la to r/M o to r driver ICs

A7188

Abstract: EPCOS CS 230 04 07 0 A7827 A6688M B43456
Contextual Info: Aluminum electrolytic capacitors Capacitors with screw terminals Series/Type: B43456, B43458 Date: December 2010 EPCOS AG 2010. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

1990- 2335 optocoupler

Abstract: philips 3139 147 tv tuner TDA6101Q equivalent TDA3827 tda6100 ofw g 3201 ica v94 display OFW G 3352 BB515 pj 2309 smd diode
Contextual Info: Philips S em iconductors S em ico n d u cto rs fo r Television and V id eo S ystem s Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintainance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors

Digital Delay Lines

Abstract: Delay Lines "Digital Delay Lines" digital delay generator 0438 Series
Contextual Info: defining a degree of excellence DELAY LINES TABLE OF CONTENTS GENERAL CHARACTERISTICS 4 Considerations for specifying delay lines DELAY LINE MEASURING TECHNIQUES DEFINITIONS DELAY LINE APPLICATIONS 5 6-7 8 TTL DIGITAL DELAY LINES A447-XXXX-02 A447-XXXX-10

B43458

Abstract: B43456 epcos A9228 A9478
Contextual Info: Aluminum electrolytic capacitors Capacitors with screw terminals Series/Type: B43456, B43458 Date: November 2008 EPCOS AG 2008. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.