D 92 M - 03 DIODE Search Results

1N4938

Contextual Info: ¡•i" - v - v . 11 7cî'1û3 00D0357 M I 30E D B K C INTERNATIONAL s ¡r n~'03-0°i BKC IN TE RNATIONAL ELECTRONICS, INC. 6 LAKE STREET, LAWRENCE, MA 01B41 TE L NO. 508 6 8 1- 03 92 TYPE 1N4938 (SILICON DIODE) AB SO L U T E MA XI MU M RA TI NG S PEAK RE VE RS E VO LTABE

BDC08

Abstract: BDC06 MPSW92
Contextual Info: MOT ORCL A SC XSTRS/R F ISE D I t3b?aSM OOñS^lb T |T - BDC06 BDC08 CA SE 29-03, STYLE 14 TO-92 TO-226AE M A X IM U M RATINGS U nit Sym bol BDC 06 BDC 08 Collector-Emitter Voltage VCEO 300 250 Vdc Collector-Base Voltage VcBO 300 250 Vdc Em itter-Base Voltage

tic 223

Abstract: liA SOT23 7S1B-03
Contextual Info: CASE 29-04 T0 -2 2 6 AA TO-92 1 3 2 CASE 318E-04 (TO-261AA) SOT-223 CASE 318-07 (TO-236AB) SOT-23 14 CASE 646-06 (TO-116) Plastic-Encapsulated Transistors CASE 7S1B-03 SO-16 M o to ro la 's p la s tic tra n s is to rs and d io d e s e n co m p a ss huncreds of devices spanning the gamut from general-purpose

tic 2160

Abstract: BDC07 BDC05 MPSW42
Contextual Info: MO T OR OL A SC 12E D I fc.3b?aSM 0005115 ñ | X S TR S/ R F BDC05 BDC07 CASE 29-03, STYLE 14 TO-92 TO-226AE M AXIM UM RATINGS R atin g S ym b ol BDC 05 BDC 07 U n it C ollector-E m itter Voltage VCEO 3 00 250 Vdc Collector-Base Voltage VCBO 3 00 250 Vdc

F930

Abstract: T12P MPF960 F990
Contextual Info: MPF930* MPF960* MPF990* M AXIMUM RATINGS Rating Symbol MPF930 MPF960 MPF990 D ra in -S o u rc e V o lta g e V DS 35 D ra in -G a te V o lta g e V DG 35 G a te -S o u rc e V o lta g e V GS CASE 29-03, STYLE 22 TO-92 TO-226AE Unit 60 90 Vdc 60 90 V dc 3 D rain

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

ML4000

Abstract: diodes chart ML40150 ML4923 ML40019
Contextual Info: M an AMP com pany Space Qualified Diodes ML4000 Series V2.00 GaAs Gunn Diodes Minimum Output Power Po mW Operating Frequency 5 to 8GHz 8 to 12.4GHz 12.4 18.0 22.0 27.0 32.0 40.0 50.0 90.0 to to to to to to to to 18.0GHz 22.0GHz 27.0GHz 32.0GHz 40.0GHz 50.0GHz

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

RG4 DIODE

Abstract: 1N5821 MCB843 b35 DIODE schottky marking JB SCHOTTKY BARRIER DIODE 1N5820 1N5822 IEC134 MCB841
Contextual Info: SbE D • 7 1 1 D fi2 b r ilill J 9 UC1IHWVIIUUVIVI9 O lim c m i 7 T T ■ P H IN 11 T Controlled avalanche Schottky barrier diodes P H I L I P S IN T E R N A T IO N A L D E S C R IP T IO N Schottky barrier diodes in herm etically se aled S O D 8 4 A Implosion Diode ID ) envelope,

BC547 sot package sot-23

Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

MMBF4856

Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

7803 3V 1A positive voltage regulator

Abstract: 20 qfn 3x3 datasheet for 4x4 keyboard F QFN 3X3 LTC3452 LTC3524 QFN-56 5x9 50w LED driver sw 2604 ic ic sw 2604
Contextual Info: VOL 2 Power Management for LEDs High Performance Analog ICs 04109 CS3_LIN_LED_FA_10–7–08.r2.indd 2 10/24/08 3:43:50 PM LEDs and LED Driver Technology LEDs A light-emitting diode LED is a semiconductor device that emits narrow-spectrum incoherent light when forward-biased.

7803 3V 1A positive voltage regulator

Abstract: 4x5 led display 12V, 350mA LED driver LT3476 LTC3454 sw 2604 ic datasheet for 4x4 keyboard 03 07 qfn 3x3 F QFN 3X3 LT3755
Contextual Info: VOL 2 Power Management for LEDs High Performance Analog ICs 04109 CS3_LIN_LED_FA_10–7–08.r2.indd 2 10/21/08 12:52:45 PM LEDs and LED Driver Technology LEDs A light-emitting diode LED is a semiconductor device that emits narrow-spectrum incoherent light when forward-biased.

AEG T 51 N 1200

Abstract: X103 D639S Leistungsdiode aeg tt 46 n 1200 X10378 D44SR D211 AEG tt 45 F 800 D52SR
Contextual Info: A E G CORP 17E D • 002=1421, 000T333 T ■ -7 - - 03~0l Schnelle Leistungsdioden Fast power diodes Diodes de puissance rapides Typ Type If r m s m V rhm t=10n ni A V D 17 S D17SR 0 21 S D21 SR D 30 S D30SR D44S D44SR D 52 S D52SR D 67 S D67SR D 100 S D 100 SR

2SK1818-MR

Contextual Info: 2SK1818-MR FUJI POWER MOS-FET N-CHANNEL ENHANCEMENT TYPE MOS-FET F-Y SERIES I Features • O utline Draw ings Include fast recovery diode >Hign voltage Low driving power I A pp licatio n s Motor controllers Inverters Chcppors I Max. Ratings and Characteristics

BK 300 MI

Abstract: WTVA KO-48 ESAC63-004 H125
Contextual Info: ESAC63-004 2 oa i'a y h ï- 'O J T m — K SC H O T T K Y B A R R IER DIODE m n & : Features • f&vF Low Vp Super high speed switching. m m & n Connection Diagram High reliability by planer design, : Applications High speed power switching. M aximum Ratings and Characteristics

Contextual Info: ESAC63-004 2 oa : O utline D raw ings >a - y h * - ' < V 7 m — F SCHOTTKY BARRIER DIODE 03.6 *o ? 4.5 ’Ü I .32 5 08 : Features JEDEC T0-220AB Low Vp EIAJ SC-46 T.'tvT's'f a e - K ^ n t i - a s i ' Super high speed switching. m m &m •1 & V F • Connection Diagram

OA 10 diode

Contextual Info: ESA C 85-009 ioa ♦>a SCHOTTKY BARRIER DIODE • 4 $ a : Features • teV F Low VF Super high speed sw itch in g . Connection Diagram H igh reliability by planer design : Applications High speed pow er sw itch in g . ■ Æ t& fc & te : Maxim um Ratings and Characteristics

Contextual Info: PD 9.1462A International IOR Rectifier IRG4PC30UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

68W SOT

Abstract: ultra low noise 12GHz 64W SOT23 AUs SOT363 BAS 40-04 Infineon BAS 68-04 BAT 43 - 46 - 85 - 86 61 SIEMENS DIODE BAT 19 SOT143 DUAL DIODE
Contextual Info: Small CHIPS for big visions Schottky Diodes h t t p : / / w w w. i n f i n e o n . c o m Never stop thinking. max. max. typ typ t ion lica V R=0 V CT UF ( typ App ) IF = 10 m A ) IF = 1m A UF ( IF Sin gle Dua l iso lat e Dua d l se ries Dua l co m. Cat Dua

ESAC85-009

Contextual Info: E SA C 85-009 ioa ♦>a SCHOTTKY BARRIER DIODE I 4 $ A : Features te V F Low VF S uper high speed sw itch in g . Connection Diagram H igh reliability by planer design : Applications 'M&ni3X4'y*>9 H igh speed pow er sw itch in g . Maximum Ratings and Characteristics

D 92 M - 03 DIODE

Contextual Info: F 1 H 5 B - 6 1 5 Q a * ± y =e ^ = l - ) v _ FAST RECOVERY DIODE MODULE : Features Short Reverse Recovery Time • tS IM S lV ft* • Variety of Connection Menu Insulated Type • fflJ i! I A pplications Arc-W elders • 7 l) —Tfr'i —Ji»y4

Contextual Info: PLESSEY SENICOND/DISCRETE 03 DE • 7E50533 OODbbCH 3 | ~ ZC2800Er ZC2810E ZC2811E ZC5800E Schottky barrier diodes The Z C 2 8 1 0 E is not recommended for NEW DESIGNS. CH ARACTERISTICS at 2 5 ° C ambient temperature . Parameter Breakdown Voltage Reverse leakage current

ae9t

Abstract: M1011 T460 T760 TP802C09 A2D0.1 a456
Contextual Info: TP802C09 ioa SCHO TTKY B A R R IER DIODE ’ Features • 1&VF Low V p Connection Diagram Super high speed switching. High reliability by planer design I Applications High speed power switching. : Maximum Ratings and Characteristics : Absolute Maximum Ratings