D 92 M - 03 DIODE Search Results

BDC08

Abstract: BDC06 MPSW92
Contextual Info: MOT ORCL A SC XSTRS/R F ISE D I t3b?aSM OOñS^lb T |T - BDC06 BDC08 CA SE 29-03, STYLE 14 TO-92 TO-226AE M A X IM U M RATINGS U nit Sym bol BDC 06 BDC 08 Collector-Emitter Voltage VCEO 300 250 Vdc Collector-Base Voltage VcBO 300 250 Vdc Em itter-Base Voltage

tic 2160

Abstract: BDC07 BDC05 MPSW42
Contextual Info: MO T OR OL A SC 12E D I fc.3b?aSM 0005115 ñ | X S TR S/ R F BDC05 BDC07 CASE 29-03, STYLE 14 TO-92 TO-226AE M AXIM UM RATINGS R atin g S ym b ol BDC 05 BDC 07 U n it C ollector-E m itter Voltage VCEO 3 00 250 Vdc Collector-Base Voltage VCBO 3 00 250 Vdc

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

RG4 DIODE

Abstract: 1N5821 MCB843 b35 DIODE schottky marking JB SCHOTTKY BARRIER DIODE 1N5820 1N5822 IEC134 MCB841
Contextual Info: SbE D • 7 1 1 D fi2 b r ilill J 9 UC1IHWVIIUUVIVI9 O lim c m i 7 T T ■ P H IN 11 T Controlled avalanche Schottky barrier diodes P H I L I P S IN T E R N A T IO N A L D E S C R IP T IO N Schottky barrier diodes in herm etically se aled S O D 8 4 A Implosion Diode ID ) envelope,

BC547 sot package sot-23

Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

MMBF4856

Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

2SK1818-MR

Contextual Info: 2SK1818-MR FUJI POWER MOS-FET N-CHANNEL ENHANCEMENT TYPE MOS-FET F-Y SERIES I Features • O utline Draw ings Include fast recovery diode >Hign voltage Low driving power I A pp licatio n s Motor controllers Inverters Chcppors I Max. Ratings and Characteristics

BK 300 MI

Abstract: WTVA KO-48 ESAC63-004 H125
Contextual Info: ESAC63-004 2 oa i'a y h ï- 'O J T m — K SC H O T T K Y B A R R IER DIODE m n & : Features • f&vF Low Vp Super high speed switching. m m & n Connection Diagram High reliability by planer design, : Applications High speed power switching. M aximum Ratings and Characteristics

Contextual Info: ESAC63-004 2 oa : O utline D raw ings >a - y h * - ' < V 7 m — F SCHOTTKY BARRIER DIODE 03.6 *o ? 4.5 ’Ü I .32 5 08 : Features JEDEC T0-220AB Low Vp EIAJ SC-46 T.'tvT's'f a e - K ^ n t i - a s i ' Super high speed switching. m m &m •1 & V F • Connection Diagram

OA 10 diode

Contextual Info: ESA C 85-009 ioa ♦>a SCHOTTKY BARRIER DIODE • 4 $ a : Features • teV F Low VF Super high speed sw itch in g . Connection Diagram H igh reliability by planer design : Applications High speed pow er sw itch in g . ■ Æ t& fc & te : Maxim um Ratings and Characteristics

Contextual Info: PD 9.1462A International IOR Rectifier IRG4PC30UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

ESAC85-009

Contextual Info: E SA C 85-009 ioa ♦>a SCHOTTKY BARRIER DIODE I 4 $ A : Features te V F Low VF S uper high speed sw itch in g . Connection Diagram H igh reliability by planer design : Applications 'M&ni3X4'y*>9 H igh speed pow er sw itch in g . Maximum Ratings and Characteristics

ae9t

Abstract: M1011 T460 T760 TP802C09 A2D0.1 a456
Contextual Info: TP802C09 ioa SCHO TTKY B A R R IER DIODE ’ Features • 1&VF Low V p Connection Diagram Super high speed switching. High reliability by planer design I Applications High speed power switching. : Maximum Ratings and Characteristics : Absolute Maximum Ratings

KE 10A DIODE

Contextual Info: TS802C09< ioa SCHOTTKY BARRIER DIODE Features • »»*#1*^116 Surface mount device. • 1fcVF Low VF • X-f Xl£-KA *#*i:3fc\,' Super high speed switching. •w s& s* Connection Diagram • TV-*- Jt t f t f l MRt t High reliability by planer design. ■ £ ! & : Applications

HFA140NH60R

Abstract: IRFP250
Contextual Info: PD -2.446 rev. B 03/99 HFA140NH60R HEXFRED Ultrafast, Soft Recovery Diode TM LUG TERMINAL CATHODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters a d BASE ANODE VR = 600V VF typ. ƒ = 1.3V IF(AV) = 140A

HFA140NH60

Abstract: IRFP250
Contextual Info: PD -2.447 rev. B 03/99 HFA140NH60 HEXFRED Ultrafast, Soft Recovery Diode TM LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters a d BASE CATHODE V R = 600V V F typ. ƒ = 1.3V IF(AV) = 140A

Contextual Info: ESJA92 iokv , 12kV : Outline Drawings H IG H VO LTA G E S IL IC O N D IO D E '>'&>?• -y ESJ A 92 li, * ‘>#}J|g U T i i j L l / i 6 ESJA92 is high reliability resin molded type high speed high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin.

Contextual Info: YG802C N 09 uoa) SCHOTTKY BARRIER DIODE •¡NHIc : Features • lfc w 11 # *e us £ t i t-.7 1\ , K ? -f 7 I nsul at ed packa g e by fu lly m o ld in g . • te V F IM tttt C onnection Diagram Low V k • X 'f S u p e r h ig h speed s w itc h in g . •

1mb50-090a

Abstract: ERD65-090 H150 1mb60-090
Contextual Info: ERD65-090 30A * ± 'J K rHi FAST RECOVERY DIODE : Features • ¡ftMJ± High Voltage • Low forward Voltage drop. #/jvgu/\°.y4-—v Small Package Connection Diagram : Applications • W /ifc&tg ®® Voltage Resonance Power Supply Induction Heater • 1M B50-090A, 1 M B 6 0 -0 9 0 £ *fc f# ffl

OF LED 55B

Abstract: LED55B LED55C LED56 LED56F 55BF ge 55b NMTC LED55BF LED55CF
Contextual Info: Optoelectronic Specifications Infrared Emitter LED55B, LED55C,LED56, LED55BF, LED55CF, LED56F Gallium Arsenide Infrared-Em itting Diode The GE Solid State LED55B-LED55C-LED56 Series are gallium arsenide, light em itting diodes which emit non-coherent, infrared energy with a peak wave length of

P4 diode

Abstract: RHS 25 105 OHMS J 300 Amps SCR 18XX00 R7S0 scr control circuit for welding Z7A marking TT 80 SCR MODULE scr 209 PEC 816
Contextual Info: POWEREX INC 1SE » • 72T4b51 0003^07 T ■ f O M Æ V K G i r POW-R-BRIK Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 72.75.15 P h d S B C O tltfO l

Contextual Info: M fa e c m M an A M P c o m p a n y Case Styles Space Qualified Diodes 31 30 - H DIA. - D DIA. » B DIA. MILLIMETERS MIN. MAX. INCHES MIN. MAX. DIM. A 0 .119 0 .127 3.02 3.22 B 0.060 0.064 1.52 1.63 C 0.205 0.225 5.21 5.72 D 0.085 0.097 2.16 2.46 DIM. E 0.060

UDZ2.0B

Contextual Info: Formosa MS SMD Zener Diode UDZ2.0B THRU UDZ36B List List. 1 Package outline. 2 Features. 2

SMD ZENER DIODE 243

Contextual Info: Formosa MS SMD Zener Diode UDZ2.0B THRU UDZ36B List List. 1 Package outline. 2 Features. 2