D 756 TRANSISTOR Search Results

2SC756

Contextual Info: sony: S E M I C O N D U C T O R S V - — h 7 v >>X * 2 SC 756 {±, $f b L < H fg § ft tz, 7 'y 'v 7^9 Advanced Passivated Mesa APM M / ' Transistor) T", , -f-coii M i- L , fciS ffllg , ^ f f l 'l t i O b 7 2 SC 756 ( i , S& S& to If i ft 3£ 32 v 9 9 • x i

GaN ADS

Abstract: CGH40010 Large Signal Model CGH40010 AlGaN/GaN HEMTs CGH40010 ads Class E amplifier class E power amplifier GaN amplifier class d amplifier theory transistor 40361
Contextual Info: A High Power, High Efficiency Amplifier using GaN HEMT Bumjin Kim, D. Derickson, and C. Sun California Polytechnic State University –Electrical Engineering Department San Luis Obispo, CA 93407 csun@calpoly.edu, 805-756-2004 Abstract—A class B and a class F power amplifier are

ztx756

Abstract: SE179
Contextual Info: PNP Silicon Planar Medium Power High Voltage Transistors ZTX 756 ZTX 757 FEATURES • • • • • 1W p o w e r d issip a tio n a t T >mb = 2 5 ° C E xce lle n t gain c h a ra c te ristic s at lc = 1 0 0 m A V o lta g e s up to 3 0 0 V L o w sa tu ra tion v o lta g e s

SE024 ic

Abstract: MAX756 equivalent Sumida CD54-220 MAX757 SE024 CMOS step-up DC-DC switching regulator for small, low input voltage MAX756 190113 MAX756EPA MAX756CSA
Contextual Info: 19-0113; Rev. 0:6/93 3.3V/5V /A djustable O utput, Step-Up, DC-DC C onverters The MAX756/MAX757 provide three improvements over previous devices. Physical size is reduced - the high switching frequencies up to 0.5MHz made possible by MOSFET power transistors allow for tiny (<5mm diameter)

MAX756CSA

Contextual Info: 19-0113; Rev. 0; 6/93 3.3V/5V /A djustable Output, Step-Up, DC-OC Converters The MAX756/MAX757 provide three improvements over previous devices. Physical size is reduced - the high switching frequencies up to 0.5MHz made possible by MOSFET power transistors allow for tiny (<5mm diameter)

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-92 Plastic Package CP756 CP757 PNP SILICON PLANAR EPITAXIAL TRANSISTORS Medium Power High Voltage Transistors

schematic diagram of a router

Abstract: "plasma generator " schematic D 756 transistor jk flip flop to d flip flop conversion IGC10000 IGC10408 IGC10756 IGC11500 power supply tester schematic diagram 3 phase inverter simulation diagram
Contextual Info: llDßfinii^DtL The IG C 10000 Series C M O S Gate Arrays FEATURES GENERAL DESCRIPTION • Complexity from 408 to 1500 Equivalent 2-input Gates ■ Mature Silicon Gate CMOS Technology — Low development cost —3.3 to 9V nominal power supply range An IGC10000 Gate Array is a m atrix o f identical cells,

MAX756 for low power DC-DC converter

Abstract: MAX756CSA MAX757
Contextual Info: 19-0113; Rev. 1; 10/93 /• /■ yjxiyi/i 3 .3V/5V/A djustable Output, Step-Up, DC-DC C onverters The MAX756/MAX757 provide three improvements over previous devices. Physical size is reduced - the high switching frequencies up to 0.5MHz made possible by

irfd110

Abstract: fd110
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD110 IRFD113 TMOS Field Effect Transistor Dual In-Line Package N-Channel Enhancement Mode TM O S FET TR A NSISTO R S FET DIP Ideal for Peripheral Control Applications Intermediate 1 Watt Power Capability Standard DIP Outline

BC87

Contextual Info: SIEMENS PNP Silicon Darlington Transistors • BC 876 . BC 880 High current gain • High collector current • Low collector-emitter saturation voltage • Complementary types: BC 875, BC 877, BC 879 NPN Type Marking BC 876 BC 878 BC 880 Ordering Code

ESM379

Abstract: esm diodes
Contextual Info: *E S M 379 PNP SILICON TRANSISTOR, PLANAR TRANSISTOR PNP S ILIC IU M , PLAN A R He Preferred device D is p o s itif recommandé The ESM 379 is a low noise high current transistor w ith very good signal handling capability. It is intended for use as input am plifier in large signal

darlington 8A 300V

Abstract: 2SD1534
Contextual Info: Power Transistors 2SD1534 2S D 1534 Silicon PNP Triple-Diffused Planar Darlington Type • Package Dim ensions High Power A m plifier Unit ! mm ■ Features • V ery goo d lin earity o f DC c u r re n t gain • High c o lle c to r-b a s e v o lta g e I i f e

BFQ253A

Abstract: BFQ233 BFQ233A BFQ253
Contextual Info: Philips Semiconductors b b £ 3 R 3 ]i G D 3 1 7 D ti EGO NPN 1 GHz video transistors M l APX Product specification BFQ233; BFQ233A "• N AMER PHILIPS/DISCRETE DESCRIPTION blE D PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with emitter-ballasting resistors and a

4G lte RF Transceiver

Abstract: UMTS band 1 SMA duplexer LTE filter band 13 LTE bandpass filter PIN DIODES OFFER HIGH POWER HF BAND SWITCHING LTE rf front end 3g phone CIRCUIT diagram bgsf18 3G HSDPA circuits diagram BGA749N16
Contextual Info: BGA748N16 B G A 7 4 8 N 1 6 f o r 3 G / HS P A / L T E A ppl ic atio ns Suppo r t i ng B an d s 4,13 and 17 with Reference Resistor Rref= 8.2 kΩ Application Note AN239 Revision: Rev. 1.0 2010-09-02 RF and Protecti on Devi c es Edition 2010-09-02 Published by

4G lte RF Transceiver

Abstract: RF transceiver LTE 3G HSDPA circuits diagram circuit diagram transceiver 3g BGA736L16 murata LTE duplexer band 20 lte RF Transceiver MURATA Duplexers BGA711L7 BGA735N16
Contextual Info: BGA748N16 B G A 7 4 8 N 1 6 f o r 3 G / HS P A / L T E A ppl ic atio ns Suppo r t i ng B an d s 4,13 and 17 with Reference Resistor Rref= 2.7 kΩ Application Note AN238 Revision: Rev. 1.0 2010-09-02 RF and Protecti on Devi c es Edition 2010-09-02 Published by

35606

Abstract: NR041
Contextual Info: sa NATL S E M I C O N D { D I S C R E T E } 650 1130 2T 0 . NATL SEMICOND, bsoiiao D0 3 Sb0 h dëT| DISCRETE 28C 35605 r- National Semiconductor D * o fiC NR041(NPN) low-level signal switching transistor features | 1 | package and lead coding • 40mV guaranteed V c e (sat) characteristics at

Contextual Info: SIEMENS BCR 400R Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from

2SK241

Contextual Info: TOSHIBA 2SK241 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK241 FM TUNER, VHF AND RF AM PLIFIER APPLICATIONS. • • • • ¿am . Low Reverse Transfer Capacitance Crss = 0.035pF Typ. NF = 1.7dB (Typ.) Low Noise Figure High Power Gain Gps - 28dB (Typ.)

LD 757 ps

Abstract: smd code cfa
Contextual Info: SIEMENS BUZ104L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dw/df rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ104L l'os 50 V fa 17.5 A ffesíon

2SK241

Abstract: 2SK24
Contextual Info: TOSHIBA 2SK241 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK241 FM TUNER, VHF AND RF AM PLIFIER APPLICATIONS. • • • • ¿am . Low Reverse Transfer Capacitance Crss = 0.035pF Typ. NF = 1.7dB (Typ.) Low Noise Figure High Power Gain Gps - 28dB (Typ.)

Contextual Info: SIEMENS BUZ 104L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ104L Vos 50 V b 17.5 A flDS on

Contextual Info: N AMER PHILIPS/DISCRETE bbSB'lBl DDEfilBS 4T0 • IAPX b'JE T> A ZN ZyU b 2N2906A SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P medium power transistors in TO-18 metal envelopes designed primarily for high-speed switching and driver applications for industrial service.

FET marking FL

Abstract: TRANSISTOR MARKING FA D 756 transistor BCR400 Q62702-C2479 transistor marking fl 3VS4 FLC103 Siemens transistors rf marking W4s
Contextual Info: SIEMENS BCR 400R Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from

Contextual Info: Philips Semiconductors M bb.53^31 ODBITD1! 200 • A P X ^Productspecificatlon NPN 1 GHz video transistors BFQ233; BFQ233A 1 N AMER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with emitter-ballasting resistors and a