D 756 TRANSISTOR Search Results

2SC756

Contextual Info: sony: S E M I C O N D U C T O R S V - — h 7 v >>X * 2 SC 756 {±, $f b L < H fg § ft tz, 7 'y 'v 7^9 Advanced Passivated Mesa APM M / ' Transistor) T", , -f-coii M i- L , fciS ffllg , ^ f f l 'l t i O b 7 2 SC 756 ( i , S& S& to If i ft 3£ 32 v 9 9 • x i

SE024 ic

Abstract: MAX756 equivalent Sumida CD54-220 MAX757 SE024 CMOS step-up DC-DC switching regulator for small, low input voltage MAX756 190113 MAX756EPA MAX756CSA
Contextual Info: 19-0113; Rev. 0:6/93 3.3V/5V /A djustable O utput, Step-Up, DC-DC C onverters The MAX756/MAX757 provide three improvements over previous devices. Physical size is reduced - the high switching frequencies up to 0.5MHz made possible by MOSFET power transistors allow for tiny (<5mm diameter)

MAX756CSA

Contextual Info: 19-0113; Rev. 0; 6/93 3.3V/5V /A djustable Output, Step-Up, DC-OC Converters The MAX756/MAX757 provide three improvements over previous devices. Physical size is reduced - the high switching frequencies up to 0.5MHz made possible by MOSFET power transistors allow for tiny (<5mm diameter)

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-92 Plastic Package CP756 CP757 PNP SILICON PLANAR EPITAXIAL TRANSISTORS Medium Power High Voltage Transistors

MAX756 for low power DC-DC converter

Abstract: MAX756CSA MAX757
Contextual Info: 19-0113; Rev. 1; 10/93 /• /■ yjxiyi/i 3 .3V/5V/A djustable Output, Step-Up, DC-DC C onverters The MAX756/MAX757 provide three improvements over previous devices. Physical size is reduced - the high switching frequencies up to 0.5MHz made possible by

irfd110

Abstract: fd110
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD110 IRFD113 TMOS Field Effect Transistor Dual In-Line Package N-Channel Enhancement Mode TM O S FET TR A NSISTO R S FET DIP Ideal for Peripheral Control Applications Intermediate 1 Watt Power Capability Standard DIP Outline

ESM379

Abstract: esm diodes
Contextual Info: *E S M 379 PNP SILICON TRANSISTOR, PLANAR TRANSISTOR PNP S ILIC IU M , PLAN A R He Preferred device D is p o s itif recommandé The ESM 379 is a low noise high current transistor w ith very good signal handling capability. It is intended for use as input am plifier in large signal

darlington 8A 300V

Abstract: 2SD1534
Contextual Info: Power Transistors 2SD1534 2S D 1534 Silicon PNP Triple-Diffused Planar Darlington Type • Package Dim ensions High Power A m plifier Unit ! mm ■ Features • V ery goo d lin earity o f DC c u r re n t gain • High c o lle c to r-b a s e v o lta g e I i f e

BC264A

Abstract: BC264D IEC134
Contextual Info: 711002b G0b745T T3b IPHIN BC264A to D N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical N-channel planar epitaxial junction field-effect transistors In a plastic TO-92 variant; in­ tended for hi-fi amplifiers and other audio-frequency equipment. QUICK REFERENCE D A TA

35606

Abstract: NR041
Contextual Info: sa NATL S E M I C O N D { D I S C R E T E } 650 1130 2T 0 . NATL SEMICOND, bsoiiao D0 3 Sb0 h dëT| DISCRETE 28C 35605 r- National Semiconductor D * o fiC NR041(NPN) low-level signal switching transistor features | 1 | package and lead coding • 40mV guaranteed V c e (sat) characteristics at

2SK241

Contextual Info: TOSHIBA 2SK241 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK241 FM TUNER, VHF AND RF AM PLIFIER APPLICATIONS. • • • • ¿am . Low Reverse Transfer Capacitance Crss = 0.035pF Typ. NF = 1.7dB (Typ.) Low Noise Figure High Power Gain Gps - 28dB (Typ.)

2SK241

Abstract: 2SK24
Contextual Info: TOSHIBA 2SK241 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK241 FM TUNER, VHF AND RF AM PLIFIER APPLICATIONS. • • • • ¿am . Low Reverse Transfer Capacitance Crss = 0.035pF Typ. NF = 1.7dB (Typ.) Low Noise Figure High Power Gain Gps - 28dB (Typ.)

Contextual Info: N AMER PHILIPS/DISCRETE bbSB'lBl DDEfilBS 4T0 • IAPX b'JE T> A ZN ZyU b 2N2906A SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P medium power transistors in TO-18 metal envelopes designed primarily for high-speed switching and driver applications for industrial service.

FET marking FL

Abstract: TRANSISTOR MARKING FA D 756 transistor BCR400 Q62702-C2479 transistor marking fl 3VS4 FLC103 Siemens transistors rf marking W4s
Contextual Info: SIEMENS BCR 400R Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from

marking w4s

Abstract: marking code transistor ND D 756 transistor MARKING HRA transistor wc
Contextual Info: SIEMENS BCR 400R Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage a nd extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of N P N transistors a nd F E T s from

vct 4953

Abstract: MJH13090 MJH13091 IU70
Contextual Info: MJH13090 MJH13091 HIGH SPEED NPN POWER TRANSISTORS 400 & 450 VOLTS 15 AMPS, 125 WATTS The MJH13090 and MJH13091 transistors are designed for high-voltage, high-speed power switching in inductive cir­ cuits where fall time is critical. They are particularly suited for

I8212

Contextual Info: TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF PHILIPS INTERNATIONAL 5 bE D I 7 1 1 DflEb [IDM3 4 bb 7 G 0 « P H I N SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, for use in audio output stages and for general purpose amplifier and high-speed switching applications.

MGF4918D

Abstract: MGF4910D MGF4916D MGF4917D mgf4914 mitsubishi mgf mitsubishi mgf-4918d
Contextual Info: ! MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4910D Series TAPE CARRIER SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF4910D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to l< band amplifiers. The hermetically sealed metal-ceramic

AO4456

Abstract: 24V 20A SMPS SMPS 24V 24v 5a smps SMPS 30v 20a
Contextual Info: AO4456 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load

c 879 transistor

Abstract: BFT24 t 326 Transistor 702 P TRANSISTOR
Contextual Info: Product specification Philips Sem iconductors Ê= NPN 2 GHz wideband transistor PHILIPS INTERNATIONAL 5LE • D BFT24 B FT24 5 7110fl5b O G M S ^ b TMT « P H I N PINNING DESCRIPTION NPN transistor in a plastic SO T37 envelope. DESCRIPTION PIN 1 base It is prim arily intended for use in RF

s22b

Abstract: bf181 s21b b 514 transistor bf 181 bf181 transistor ic s21b J BF181 MAX S21B
Contextual Info: *BF181 NPN S IL IC O N T R A N S IS T O R , P LA N A R TRANSISTOR NPN S ILIC IU M , PLANAR sfc Preferred device D isp o sitif recommandé The NPN plan transi to r BF 181 is intended for use in U H F converter and oscillator stages television receivers. Le transistor plan NPN BF 181 est destiné à être u tili­

JV48C

Abstract: BUV48B
Contextual Info: S G S -T H O M S O N [*[R } om iO T (Q « S BUX48B/V48B/V48BFI BUX48C/V48C/V48CFI HIGH VOLTAGE POWER SWITCHING DESCRIPTION The BUX48B/C, BUV48B/C and BUV48BFI/CFI are silicon multiepitaxial mesa NPN transistors moun­ ted respectively in TO-3 metal case, TO-218 plastic

Contextual Info: Philips Sem iconductors b b 5 3 ^ 3 1 DDE6TES 756 APX Product specification BLV13 VHF power transistor M AUER PHILIPS/DISCRETE QUICK REFERENCE DATA RF performance at T ^ = 25 °C in a common emitter test circuit. FEATURES • Gold metallization ensures excellent reliability.

transistor D 4515

Abstract: PJ 1179 D 4515 ST2000 4463 SL71Y STE2001 701023 Pj 1189 1 928 403 226
Contextual Info: Solutions for Sales Offices 69050-002 Manaus/AM Costantino Nery Street, 2789 80 Stair - 806 Room Chapada Tel. +55 92 657 0017 Fax +55 92 657 0157 COLORADO Longmont Tel. +303 772 9729 Fax +303 381 3680 CONNECTICUT Woodstock Tel. +860 928 7700 Fax +860 928 2722