D 6 MARKING PNP Search Results

Transistor hFE CLASSIFICATION Marking CE

Abstract: KTX111T
Contextual Info: SEMICONDUCTOR KTX111T TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES E K ᴌIncluding two devices in TS6. 1 6 G 2 5 G Thin Super Mini type with 6 pin K B 3 4 DIM A B C D E 6 5 C 4 J Marking Q1 h FE Rank Q2 Type Name

supersot 6 TE

Contextual Info: S E M IC O N D U C T O R tm FMBA0656 Package: SuperSOT-6 C2 Device Marking: .003 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT- 6 Surface Mount Packsige

D marking PNP

Abstract: MARKING IC RP 6 PR63
Contextual Info: S E M IC O N D U C T O R tm FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. V E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT-6 Surface Mount Packa ge

transistor Y4

Abstract: complementary npn-pnp power transistors marking A1 TRANSISTOR FMB1020 marking 004
Contextual Info: D is cr ete Power S iq n a l T e ch n o lo g ie s MICDNDUCTDRtm ^ ^ FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complem entary Dual Transistor SuperSOT-6 Surface Mount Package

marking Y1 transistor

Abstract: y1 transistor complementary npn-pnp power transistors y1 npn transistor marking y1 FMB2227A Supersot 6 transistor y1
Contextual Info: S E M IC O N D U C T O R FMB2227A ,r , C2 ei -•P C1 Package: SuperSOT-6 Device Marking: .001 i Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 w" E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT-6 Surface Mount Packa ge

H119

Abstract: TK71 T092-3
Contextual Info: TK71150N SPECIFICATION TABLE OF CONTENTS 1.Purpose 2.TOKO Part Number 3. F u n d ion 4.Applications 5.Structure 6.Package Outline 7.Absolute Maximum Ratings 8.Electrical Characteristics 9.Test Circuit Pin Assignment 10.Block Diagram 11.Definition 12.Package Outline D i mensions/Marking

supersot 6 TE

Abstract: Supersot 6
Contextual Info: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB1020 4p Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Com plem entary Dual Transistor

ITK71120N

Abstract: TK71 TK71120N
Contextual Info: TK71120N TABLE OF CONTENTS 1.Purpose 2.TOKO Part Number 3. F u n d ion 4. Applications 5.Structure 6.Package Outline 7.Absolute Maximum Ratings 8.Electrical Characteristics 9.Test Circuit Pin Assignment 10.Block Diagram 11.Definition 12.Package Outline Dimensions/Marking

TK71

Abstract: TK71220M 1220M
Contextual Info: TK71220M' TABLE OF CONTENTS 1.Purpose 2.TOKO Part Number 3. F u n d ion 4. Applications 5. Structure 6.Package Outline 7.Absolute Maximum Ratings 8.Electrical Characteristics 9.Test Circuit 10.Pin Assignment 11.Block Diagram 12.Definition 13.Package Outline Dimensions/Marking

Low Drop Low Power Voltage Regulator

Abstract: TK71 TK71328M
Contextual Info: SPECIFICATION TABLE OF CONTENTS 1.Purpose 2.TOKO Part Number 3. F u n d ion 4. Applications 5.Structure 6.Package Outline 7.Absolute Maximum Ratings 8.Electrical Characteristics 9.Test Circuit 10.Pin Assignment 11.Block Diagram 12.Definition 13.Package Outline Dimensions/Marking

supersot 6 TE

Contextual Info: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB3946 C2 E1 C1 <• Package: SuperSOT-6 Device Marking: .002 g2 Note: The " . " dot signifies Pin 1 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Com plem entary Dual Transistor

Contextual Info: BCR192. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 22kΩ , R2 = 47kΩ • BCR192U: Two internally isolated transistors with good matching in one multichip package

Contextual Info: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 10 kΩ • BCR183S / U: Two internally isolated transistors with good matching in one multichip package

SMBT3906U

Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

BCR183

Abstract: BCR183F BCR183S BCR183U BCR183W marking WMs infineon marking code B2 SOT23 transistor marking 6c1
Contextual Info: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 10 kΩ • BCR183S / U: Two internally isolated transistors with good matching in one multichip package

s2A SOT23

Abstract: marking s2A sot23 SMBT3906U
Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

Contextual Info: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 10 kΩ • BCR183S / U: Two internally isolated transistors with good matching in one multichip package

transistor marking code wts

Abstract: BCR108T BCR166 BCR166F BCR166L3 BCR166T BCR166W SC75 STP8
Contextual Info: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ , R2 = 47 kΩ BCR166/F/L3 BCR166T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR166 WTs

BCR108T

Abstract: BCR191 BCR191F BCR191L3 BCR191T BCR191W SC75
Contextual Info: BCR191. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 22 kΩ , R2 = 22 kΩ BCR191/F/L3 BCR191T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR191 WOs

MARKING W2S

Contextual Info: BCR189. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 22 kΩ BCR189F/L3 BCR189T C 3 R1 1 B 2 E EHA07180 Type Marking Pin Configuration Package BCR189F W2s 1=B 2=E 3=C

Contextual Info: BCR164. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 10kΩ BCR164F/L3 BCR164T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration Package BCR164F*

BCR108T

Abstract: BCR158 BCR158F BCR158L3 BCR158T BCR158W SC75
Contextual Info: BCR158. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ BCR158/F/L3 BCR158T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR158 WIs 1=B

marking WSs

Contextual Info: BCR169. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ • BCR169S / U: Two internally isolated transistors with good matching in one multichip package BCR169/F/L3

Contextual Info: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101