D 3SB A 60 Search Results

Contextual Info: b3E • bE4TÖ27 GDlSlbl 3Sb « H I T S M IT S U B IS H I B IP O L A R D IG IT A L IC s M54600P MITSUBISHI DGTL LOGIC DUAL PE R IP H E R A L P O S IT IV E AND D R IVER DESCRIPTION M54600P is a semiconductor integrated circuit containing 2 PIN CONFIGURATION (TOP VIEW)

3SB diode

Contextual Info: NEC ELECTRONICS INC LEE D • b42?SS5 0037^05 3Sb « N E C E DATA SHEET NEC LASER DIODE MODULE NDL5762P ELECTRON DEVICE 1 310 nm O P T IC A L F IB ER C O M M U N IC A T IO N S InG aAsP D C -P B H P U L SE D L A SE R D IO D E M O D U L E DESCRIPTIO N N D L 5 7 6 2 P is a 1 3 1 0 nm pulsed laser diode D IP module with singlemode fiber and internal thermo-electric cooler. It is

N08DPA

Abstract: NP06DZB NP05DZB NP06DZ N08DP NP04S NP04SB K25VJ85C N06D P382
Contextual Info: SMDインダクタ SMD INDUCTORS OPERATING TEMP 03, 04, 05, 06タイプ K25VJ105C （製品自己発熱を含む） 08タイプ fIncluding self-generated heatg K25VJ85C 特長 FEATURES YSmall surface area and low profile. YDesigned for high current applications where a surface mount component

S3V 8* Rectifier

Abstract: s4vb s4vb 10 46 s4vb bridge rectifier
Contextual Info: Large Ifsm I-I S MD • — 0 .8 -1 A - 0 .4 -1 A 1-1.5A Bridge * • S I P - 4~6A *?i gDiodes j 1 0 -2 5 A * S Q IP ;• 2 .3 -2 0 A 2 -1 0 A 1 5 -5 0 A * SI ZB □ S1NB □ S1W B A D S1YB □ S1ZB □ S1NB □ S1 WB(A) □ S1VB □ D2SBA □ — D 2SBD L — Low Noise

NP05DZB

Abstract: NP06DZB N08DPA N05DB NP04SB
Contextual Info: SMDインダクタ SMD INDUCTORS OPERATING TEMP 03, 04, 05, 06タイプ K25VJ105C （製品自己発熱を含む） 08タイプ fIncluding self-generated heatg K25VJ85C 特長 FEATURES YSmall surface area and low profile. YDesigned for high current applications where a surface mount component

Contextual Info: Single In-line Package B rid g e D io d e • O U T L IN E D IM E N S IO N S D3SBAD 600V 4A Unit • mm ■ R A T IN G S Absolute Maximum Ratings m g IE tj- & It em Symbol s -g -g is s /t O perating J u n c tio n Tem perature - £ A M % lK J ± Average Rectified Forward Current

Contextual Info: SIM-20SB GaAs infrared light-emitting diode This infrared GaAs LED is housed in a compact, transparent plastic housing. It has a 1.85 mm diameter lens and radiates at a wavelength of 950 nm making it suitable for silicon light detectors. Matched with the RPM-20PB light

Contextual Info: DIODE MODULE DD30HB/KD30HB UL!E76102 M Power Diode Module D D 30 H B series are designed for various rectifier circuits. D D 30 H B has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to 1,600 V is

Trompeter Electronics patch panel

Contextual Info: OATA CONTAINED IN THIS DOCUMENT IS PROPRIETARY TO TROMPETER ELECTRONICS INC. AND SHALL NOT 8E DISCLOSED. COPIED DR USED FO RT RO CU RE ME NT DR MANUFACTURE WITHOUT EXPRESS WRITTEN PERMISSION GP TROMPETER ELECTRONICS INC._ RE V IS IO NS

MS3320

Abstract: BACC18 BACC18AD MS14153 Klixon 2 32-6 ms25244 bacc18z klixon thermal switch klixon Overload Protector 2TC14-5
Contextual Info: I NNOVATIVE S OLUTIONS I N S ENSORS A ND C O N T R O L S Precision Products Aircraft Circuit Breakers Aircraft Circuit Breakers 3TC14 2TC66 2TC14 2TC49 3TC7 5TC50 6752-305 6752-12 6752-100 7277-2 7274-4 7274-2 7277-1 7274-11 and 7274-69 20TC 7271-8 7271-3

siemens SFH nm

Abstract: sfh418 SFH414
Contextual Info: SIEMENS C M P N T S t OPTO 44E D ASBbBEb OODSMfib 5 SIEMENS ISIEX S FH 414 S FH 415 S FH 416 GaAs Infrared Emitter ' - H l - II Package Dimensions in Inches mrh SFH 414/415 CWp Petition ,016(0.4) ( .1*9(4*) .165 (4¿) _ l ra i (M ) .016(0.4)-} .100 <2*54>

NJM2160

Abstract: DMP16 NJM2160A NJM2160AD NJM2160AM NJM2160AV NJM216QA
Contextual Info: NJM2160A 2 0 j &  • m sc y h 7 > ^ w *m\zm§è-£Jnt- 2 D K A ^ NJM2160Afó% ífí hTV^-e-To c £ tfWÍÉT?, I M H ï 9 V Brfs 1 4 V p pö tÜ*iii|i/)''i#b^.ifo S J ± W # 8 d B 0 ) # f c $ i T > 7 & 2 c h 1*1 L T äs y , x ^ U T t - ÿ t r E A M ^ - e f o

Contextual Info: SIEMENS Silicon Piezoresistive KPY41-R .KPY47-R Relative Pressure Sensor • • • • Low pressure and temperature hysteresis Fast response High sensitivity and linearity Fatigue free monocrystaline silicon diaphragm giving high load cycle stability • High long term stability

VP0116N5

Contextual Info: V P 0116 VP0120 in c . P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Jl BVDSS/ b V dgs Rds<on max) TO-39 TO-92 TO-220 DICEt -160V 2 5 fi -100mA VP0116N2 VP0116N3 VP0116N5 VP0116ND -200V 250 -100mA VP0120N2 VP0120N3

Contextual Info: bSE D • DfllbfiDD DQMDSfl"] b O H ■ A NA A N A LO G D EV IC ES □ " ANALOG DEVICES 12-Bit, 10 MSPS A/D Converter AD9005A INC 1.1 Scope. This specification covers the requirements for a 12-bit,high speed analog-to-digitalconverter ADC . The AD9005A is a complete 12-bit ADC which includeson-board track-and-holdamplifier, voltage

Contextual Info: 7 TH IS DRAWING IS U N P U B LIS H E D . RELEASED ALL COPYRIGHT - FOR 6 5 4 3 2 PUBLICATION RIGHTS LOC RESERVED. D IS T 47 AD BY TYCO ELECTRONICS CORPORATION. REVISIONS + 0.03 0 .9 7 -0 .0 0 H O U S IN G MATERIAL: COLOR: NATURAL. D [ED C3SC3 ŒDŒD ŒD ŒD ŒD ŒD ŒD ŒD ŒC ED ŒD

SFH229P

Abstract: SFH229PF VHZ 454
Contextual Info: SIEMENS Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon PIN Photodiode with Very Short Switching Time Silicon PIN Photodiode with Daylight Filter W esentliche M erkmale Features • • • • •

Contextual Info: Power 1. Absolute MOS F E T Specification Maximum Ratings Symbol Item Condition Ratings Unit - 5 5 - 1 5 0 ”C Storage Temperature ^stg Channel Temperature ^ch 1 5 0 •c Drain-Source Voltage V dss 6 0 0 V Gate-Sourse Voltage V gss ±3 0 V Drain Current DC

SPI-315-05

Abstract: SPI-315-44 spi-325 PI-315-65 SPI-335-14 SPI-315-04 pin connection led emitter
Contextual Info: Photoreflector 7 :t IsU 7 U ? £ Photoreflector typical characteristics Ic - I f 7 * h') 7 U9 9 (i 7 * h-í V9 7 7° 9 (CJ t - < fti • fc tíH ifc iW itt ( l e —d ) <* Vi t o ü Sí fe lá o ( F ig . 7 ,8 ,9 ) hy ^ y 7.9 9 4 7°fr ¥->J > h^ h7 > V 7 9 9 4 7° riv"üU»ftn jz é

Contextual Info: N AMER PHILIPS/DISCRETE bTE ]> b b s a ^ l □□2883'! 3bl I IAPX BLU45/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope primarily intended for use in mobile radio transmitters in the 470 MHz communications band. Features

Contextual Info: 2SB1386 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT,SOT-89 SC-62) package • package marking: 2SB1386; BH^, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.35 V for lc/lB = ~4 A/—0.1 A

Contextual Info: m gm H e w le tt mLEM P A C K A R D High Power 1480 nm MQW Lasers Technical Data FPL2600, FPL4600 Features Description • 1480 nm Wavelength The FPL2600 and FPL4600 series of semiconductor lasers are designed for high output powers in the 1480 nm wavelength

E2733

Abstract: E2715
Contextual Info: INTERNATIONAL RECTIFIER SbE D m MfiSS45E 0010b47 fi B Selection Guide E1007F INTERNATIONAL RECTIFIER \ ïA> ENCAPSULATED BRIDGE RECTIFIERS INTERNATIONAL RECTIFIER EN C AP SU LA TED B R ID G E EbE D • 4B 55 4S 2 a010b4fi T ■ R E C T IF IE R S _

Contextual Info: rz7 SGS-ni0MS0N ^ 7# M » [IL IO T M I]e S T B 6 NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB6NA80 V dss RDS on Id 800 V < 1.9 Q 5.7 A TYPICAL R d s (o ii) = 1-68 Q , ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C