D 3151 Search Results

HXTR-3101

Abstract: HXTR-3121 SAJ 210 equivalent HXTR-3185 HXTR3101 HXTR-3101TX HXTR3121 2N6838 saj 141 HSMX-3131
Contextual Info: HEWLETT-PACKARD-. CMPNTS EOE D B M4M7SA4 0005553 7 E9 T/llft HEWLETT m L /ia P A C K A R D r - i h o i G en eral P u rp o se T ran sistors HXTR-3001 C hip Technical D ata HXTR-3101, TX and TXV 2N6838 HXTR-3103, TX and TXV HSMX-3131 HSMX-3151 F eatu res D escrip tion

Contextual Info: M MOTOROLA M ilita ry 54L S 1 9 0 4-B it D ecad e Counter W ith M ode Control ELECTRICALLY TESTED PER: MIL-M-38510/31513 M T h e 5 4L S 1 9 0 is an a syn ch ro n o u s U P/D O W N B C D D ecade (8421) C o u n te r and th e 54LS191 is a syn chro n o us U P/D O W N M o du lo -16 B inary

HXTR-3101

Contextual Info: HEWLETT-PACKARDi CNPNTS SOE D B M447SÔ4 0005523 7 El w m h ewlett mi.E3 PA C K A R D T 'H -O Ì G eneral Purpose Transistors HXTR-3001 Chip Technical Data HXTR-3101, TX and TXV 2N6838 HXTR-3103, TX and TXV HSMX-3131 HSMX-3151 Features D escription • H ig h G ain

Contextual Info: tile techie mbehallen/ i l l rights resttied k 5 1 2 3 D c - 1 i i_ — „ > 09 69 210 0033.500 09 69 210 0033 Par t number i_ — i -1-1 -1- ,' L pB B D e lo il. Non magnet i c D o l. Nome 1 2 /1 1 /0 1 AF losp. 32119 2 3 /0 6 /0 4 AC 31519

ESR Tester

Abstract: C6713 DSK bios cmos TMS320C6211 dsk
Contextual Info: TMS320C6211, TMS320C6211B FIXEDĆPOINT DIGITAL SIGNAL PROCESSORS SPRS073L − AUGUST 1998 − REVISED JUNE 2005 D Excellent Price/Performance Digital Signal D D D Processors DSPs : TMS320C62x (TMS320C6211 and TMS320C6211B) − Eight 32-Bit Instructions/Cycle

fm radio using cd 1619 CP ic circuit diagram

Abstract: PNA7509P TDA1517 equivalent TDA1541A S1 PNA7518P tda7052 equivalent TDA1011 equivalent TEA5570 TEA5570 equivalent mesa
Contextual Info: RADIO, A U D IO AND ASSOCIATED SYSTEMS BIPOLAR, MOS Part a page Selection guide Functional in d e x . Numerical in d e x .

DS0164

Contextual Info: - . AICO INDUSTRIES INC . nE D • >5^04*120 00 31512 5 ■ ¡ 34 I

3015K

Abstract: 3-027K 3470K L3206 3821K 3330K
Contextual Info: OHMITE LITTLE HENRIES Inductive Components Manufacturing Company .2 5 0 ± .0 1 0 .2 5 0 ± .0 1 0 Test Procedure for inductance and Q B : T h e p ro c e d u re fo r m e a s u rin g o f in d u c ta n c e a n d Q as o u tlin e d in M IL -C -1 5 3 0 5 a n d re p ro d u c e d h e re o n is

54LS190/BEAJC

Abstract: MICROCIRCUIT,DIGITAL TTL,COUNTER 54LS190 7603-5 SNJ54LS190J
Contextual Info: 1 R E V IS IO N S Device 01 inactive for new design. Use M38510/31513B-. D E S C R IP T IO N D ATE Remove vendor CAGE 18324. Add LCC package, logic diagram, and waveforms. Convert to military drawing format. Change code ident. no. to 67268. 19 OCT. 1987 LTR

1N3289

Abstract: 1N3291 1N3293 1N3294 1N3295 1N329 MIL-STD-750 method 2073
Contextual Info: MIL SPECS I C | D O D D i a S DDG1313 T | M I L - S - 1 9 5 0 0 / 2 4 5F AMENDMENT 1 14 May 1985 MILITARY SPECIFICATION S E M I C O N D U C T O R D E V I C E , D I O D E , S I L I C O N , PO.JER R E C T I F I E R . T Y P E S 1N32-39, 1 N 3 2 9 1 , 1 N 3 2 9 3 , 1 N 3 2 9 4 , 1 N 3 2 9 5 , A N D R T Y P E S ,

CPN-1

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256K x 40 Bit Dynamic Random Access Memory Module MCM40256 MCM40L256 for Error Correction Applications T h e M C M 4 0 2 5 6 S a n d M C M 4 0 L 2 5 6 S a r e 1 0 M , d y n a m ic ra n d o m a c c e s s m e m o ry D R A M m o d u le s o rg a n iz e d a s 2 6 2 ,1 4 4 x 4 0 b its . T h e m o d u le is a 7 2 - le a d

Contextual Info: 4 7 REVISIO NS ISS d e s c r i p t i o n \p e r ZONE r e q u e s t \d a t e 1, C R I M P E D HEX F C O N F IG U R A T IO N NO CHANG ES PPAP P E R M IH E D Q U A L IR IE D CONTROL: TO CUSTO M ER 2. C R I M E E D RECOMMENDED D R A W IN G SO. W IT H O U T FERRCLE

1000w audio amplifier

Abstract: led 3w vacuum tube amplifier eb600 Eimac 450
Contextual Info: TENTATIVE DATA 3UJ5000F3 E I T E L - M c C U L L O U G H , I nc SAN BRUNO, M E D IU M MU-TRIODE CALIFORNIA T he E im a c 3 W 5 0 0 0 F 3 ¡s a w a te r-c o o le d , m e d iu m -m u p o w e r trio d e in te n d e d fo r a m p lifie r, o sc illa to r o r m o d u la to r service . It h as a m axim um p late d is sip a t io n r a tin g o f 5 0 0 0 w a tts a n d is c a p a b le o f h ig h

3052a

Abstract: LC6512a LC865008A lc6514 300PA20 3044b LC67216A LC66516B lc864016 boe vfd
Contextual Info: VLSIs The ra p id g ro w th in d e m a n d for ASICs con tin ue s w ith a significant increase in th e ra n g e o f a p p lica tio n s a r d g re a te r th e sim plification o f design im p le m e n ta tio n procedures. To su p p ort this grow th, Sanyo's g a te array a n d sta n d a rd cell p ro d u cts are im p le m e n te d

M0090

Contextual Info: T E LE D Y N E COMPONENTS •. 2 fl£ ■ . D ■ f l ci l ? t i O d . .1 ■■■ Q 0 Q fci4a2 -i. 3 _ B § T -2 9 -2 5 — VP0104, VP0I06 SEMICONDUCTOR_ VPOIQ9 P-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION

RSN 3306 H

Abstract: ITT RZ2 g6 TDA 8841 IC rsn 3404 SN76670 4L71 bu 2508 af equivalent MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR sn76131 a1208 transistor
Contextual Info: G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS O R D ER IN G INSTRUCTIO NS A N D M EC HA NICA L D ATA MACH IV PROCUREMENT SPECIFICATION L IN EA R CIRCUITS ECL CIRCUITS SERIES 54S/74S CIRCUITS

Contextual Info: 7 D RAWING THIS MADE IN D RAWING @ THIRD IS ANGLE UNPUBLISHED. COPYRIGHT 19 6 5 3 4 2 PROJECTION RELEASED BY AMP FOR PUBLICATION INCORPORATED. ALL LOG ,19 I NTERNATI ONAL RIGHTS D I 5T 39 AD RESERVED. REV I5 I0N5 p F ZONE LTR B C D E F CONTACT AREA PLATED WITH .000762 [.000030] GOLD;

Contextual Info: 4 REVISIONS I5S ZONE DESCRIPTION\PER REOU EST\DATE F F RECOMMENDED CARLE STRIPPING D 4 8 4 IIAF.4 E E D D C NOTES: 1. 2. 5. 4. FINISH (PLATING THICKNESS IN MICRO-INCHES) BRASS PER OQ -B-6S6 NICKEL PL. 100 MIN. THICK OVER COPPER STRIKE BERYLLIUM COPPER PER D 0 - C - 5 3 0

Contextual Info: FUter-D-Subminiature Filtered-D-Subminiature connectors, with integrated ferrite plate D escription: Electromagnetic wave Interference in electric equipments has become a serious problem recently. The result Is that we must now find new ways to deal with the

HXTR-5103

Contextual Info: HEliJLETT-PACKARDi C MPNT S E OE D □ 4447SÔ4 OOOSS41 =1 □ K ’h n b H E W LETT HOM P A C K A R D _ ~ X '~ 1 'i~ 0 5 L inear P ow er Transistors HXTR-5001 Chip Technical D ata 2N6701 HXTR-5101, TX andTXV 2N6741 (HXTR-5103, TX andTXV) Features D escription

HXTR-3102

Abstract: 3104j HXTR-3104 HXTR-3002 3002 ic equivalent 3002 TRANSISTOR equivalent 2N6839 high power transistor s-parameters HXTR-3102TXV Silicon Bipolar Transistor Hewlett-Packard
Contextual Info: HEWLETT-PACKARD i C MP N T S 50E D D 4MM75Ö4 0D0SS3S 3 Q HEW LETT ¿ rJ l P A C K A R D T - 3 1 -3 -3 T ' 3 3 -0 5 - L in ea r P o w e r T ran sistors HXTR-3002 C hip Technical D ata HXTR-3102, TX and TXV

PD72120

Abstract: WW76H DA16-DA23 MPD72120 UPD72120
Contextual Info: NEC NEC Electronics Inc. Description Th e ^ P D 7212 0 A dvanced G raph ics Display C on troller A G D C displays ch aracters an d g rap hics on a raster scan device from co m m an ds and param eters received from a ho st processor or CPU. Features of th e A G D C

Contextual Info: TH 1S DRAW 1NO 1S UNPUBL1SHED. C 20 RELEASED FOR PUBLICATION LOC AD BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. COPYRIGHT 20 R E V 1S I O N S D I ST 00 p LTR u V DESCR1PTION DATE R E V I S E D P E R EC 0 S I B - 0 I 1 3 - 0 1 A D D E D : - 1 3 P E R EC O S I B - O I 1 4 - 0 1

VP0104

Abstract: VP0109 VP0109ND TELEDYNE VP0104N3 VP0104ND VP0106 VP0106N3 VP0106ND VP0109N3
Contextual Info: 2fi£ D T E LE DY NE COMPONENTS • S11?bQd GD0b4S2 - d l T-29-25 VP0104, VP0106 VP0109 SEMICONDUCTOR P-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION TO-22CAA TO-92 Plastic Package VP0104N3 VP0104ND -40V, 8.0 ohm