D*M HIGH DENSITY Search Results

mpm5192

Contextual Info: MPM5192 MPLD Features Ll J J J _1 J J J General Description C M O S , M ask- Pro g ra m m e d Lo g ic D e v ic e M P L D cap ab le of im plementing high-density custom logic functions High-volume replacement for EPM5192 E P L D designs Zero-power operation (typically 30 )j A standby)

epm5130

Abstract: EPM5016
Contextual Info: MPM5130 MPLD □ IJ □ J J □ □ J G S f lG r â l . . Description C M O S , M ask- Pro g ra m m e d Lo g ic D e v ic e M P L D cap ab le of im plementing high-density custom logic functions High-volume replacement for EPM5130 E P L D designs Zero-power operation (typically 25 ¡aA standby)

Contextual Info: DENSE-PAC 4 Megabit High Speed C M O S SRAM D PS512S8A P M I C R O S Y S T E M S D E S C R IP T IO N : The DPS512S8AP is a high speed 512K x 8 high-density, low-power static RAM module comprised of four high speed ceramic 128K x 8 monolithic SRAM's, an advanced high-speed CMOS

Contextual Info: S ig n al In te g rity a t any D istan ce: In-house design, analysis and manufacturing of high speed connectors, circuits and subsystems. Board S pacin gs fro m 3 m m to 6 0 m m : Wide variety of high speed and high density board-to-board connectors. High Speed Connectors

Contextual Info: T iF N W A/L-Tfoi M<U€ 512 Megabit CMOS 3.3V EDO DRAM High Density Memory Device 256 M egabit CMOS 3.3V EDO DRAM 128 M egabit c m o s 3.3 V e d o d r a m D A T , / m i c r o s y s t e m s Ls&WSWS PRELIMINARY DESCRIPTION: The / H - D s m n s series is a family of interchangeable memory

Contextual Info: DPS512S8AP □PM Dense-Pac Microsystems. Inc. ^ H IG H SPEED 512K X 8 C M O S SR AM M O D U L E PRELIMINARY D E SC R IPT IO N : The D P S 5 1 2 S 8 A P is a high speed 5 1 2K X 8 high-density, low -pow er static R A M m odule comprised of four 128K X 8 monolithic SR A M 's, an

68 VHDCI Offset

Contextual Info: Catalog 1307515 Issued 9-99 C H A M P Ribbon Style Connectors C o n tin u e d CHAMP 0.8mm High Density Interconnection System Product Facts • E M I s h ie ld e d high d en sity and lo w -p ro file I/O syste m ■ C o n ta c ts on 0 .8 m m c e n te rlin e s — o ffe r 3 0 %

Contextual Info: □PM DPS256S8N Dense-Pac Microsystems, Inc. MILITARY 256K X 8 C M O S SRAM MODULE O DESCRIPTIO N: The D P S2 5 6 S8 N is a Military 256K X 8 high-density, low-power static R A M module comprised of two ceramic 128K X 8 monolithic SR A M 's, an advanced high-speed C M O S d ecod er and d e cou p lin g

Contextual Info: DRAM MODULE KM M 372V 125AJ 1M x72 D R A M KMM372V125AJ Fast Page M ode D IM M w ith Q C A S , 1 K R e fr e s h , GENERAL DESCRIPTION 3 .3 V FEATURES • Performance Range: The Sam sung K M M 372V 125A is a 1M bit x 72 D ynam ic RAM high density m em ory module. The

a1601

Contextual Info: INTEGRATED DEVICE IDT M Ô 2 S 7 7 1 O O l M M S b 104 bflE D 32K x 32 128K x 32 CMOS STATIC RAM MODULES IDT7M4003 IDT7M4013 In te g ra te d D evice Technology, Inc. FEATURES DESCRIPTION • • The IDT7M4003/4013 are high-speed, high-density 1Mb/ 4Mb CMOS Static RAM modules constructed on a multilayer

Contextual Info: □PM DPS256S8P Dense-Pac Microsystems, Inc. 256K X 8 CMOS SRAM MODULE O DESCRIPTION: The D P S256 S8P is a 256K X 8 high-density, low-power static RAM module comprised of two 1 2 8 K X 8 m o no lithic SR A M 's, an advanced high-speed C M O S d e co d er and deco upling

Contextual Info: HghAxxracy8-Rn InstrurrentationAmplifier ANALOG DEVICES FEATURES Low O ffset V o lta g e : 100 jiV m ax Low D rift: 2 |xV /°C m ax W id e G ain Range 1 to 10,000 High C o m m o n -M o d e R ejection: 115 dB m in High B a n d w id th (G = 1000 : 200 kH z ty p

MLWS-815

Abstract: mlwf-200 MLWS-805 MLWD-812F Lambda Hybrid MLWS-705 LAMBDA mil 600 mil std 1275 power supply 952F MLWS-705F
Contextual Info: Part II - DC-to-DC Converters LAMBDA'S MLW SERIES High Density, High Reliability Converters for MIL-Environments Lambda's M LW Series isolated D C -to -D C converters and filters provide an idea! solution fo r the unique requirements o f m ilitary and civilian aerospace applications.

Contextual Info: D PS5 1 2 S8 P 512KX8 CMOS SRAM MODULE DESCRIPTION: T h e D P S 512 S 8P is a 5 1 2K X 8 high-density, low-power static RAM module comprised of four 12 8 K X 8 m o no lithic S R A M 's, an advanced high-speed C M O S d e co d er and deco up ling capacitors surface mounted on a co-fired ceramic

Contextual Info: 4SE D ISOCOM COMPONENTS LTD MßöbSID QQGQSfiQ S « I S O T -m - IISP817, ISP827, ISP847 p - 1 _ — jjHigh Density Mounting ¡Optically Coupled Isolators. PACKAGE DIMENSIONS / SCHEMATICS FEA TU RES ISP817 High D C current transfer ratio 50% m il. .

Contextual Info: MP1810 MPLD Features □ J J L □ □ □ □ General Description C M O S , M a sk -P ro g ra m m e d L ogic D ev ice M P L D ) ca p a b le of im plem enting high-density cu stom logic fu nctions H ig h -vo lu m e replacem e n t for E P 1 8 1 0 / E P 1 8 0 0 E P L D designs

HM5117400J

Contextual Info: M l •u* INEWPRODUCT HB56A832B Series 8,388,608-Word X 32-Bit High Density Dynamic RAM Module - PRO D UCT P R E V IE W $ H IT A C H I Rev.O Dec. 24. 1991 D escription The HB5GA832B is a 8 M X 32 dynamic R A M module, mounted 16 pieces o f l 6Mbit D R A M

Contextual Info: D -S u b c o n n e c to rs - S ta m p e d a n d F o rm e d C o n ta c ts mai n characteristics RIGHT ANGLE HIGH TEMPERATURE AND HIGH DENSITY CONNECTORS Specifications = The Amphenol "HT" series allow the • C onnectors acco rding to M IL C 24308 *-« o. customers to use through holes

as033

Contextual Info: DENSE-PAC M icrosystems /H-Dmsus “ High Density Memory Device e d o d ra m DP3ED32MX4RY5 DESCRIPTION: ssries is a fara i]y o f in teich an g eab ie m era ory m o d u ie s. T he 64 M egabitD RAM is am era b e r o f th is fara iiy w h ich u tilize s th e new an d innovative space saving TSO P

55sc

Contextual Info: November 1997 FAIRCHILD M lC O N D U C T O R FDC6322C Dual N & P Channel, Digital FET General Description Features T h e s e dual N & P C hannel logic level en hance m en t m ode field effe c transistors a re produced using Fairchild's proprietary, high cell density, D M O S technology. T h is v e ry high density

A202I

Abstract: CLA5000 2A20 3-input xnor cla52 plessey application note an 112 202A2I CI 3060 elsys CLA5000 Series 2A202I
Contextual Info: CLA5000 series Sem iconductors MICROGATE-C CLA5000 SERIES M icro gate -C is a sem i-custom design tech niq ue fo r the pro d u ctio n o f high density, high perform ance gate arrays on P lessey S e m ic o n d u c to rs 2 -m ic ro n Is o p la n a r C M O S

P552

Contextual Info: D C -D C U > M - 2 DC-DC CONVERTER fE £ O IR 6 # : •s /h s • \m • Super mini and thinner size • High wattage density 20W/cc • Realization of high efficiency with the adoption of synchronous rectification method • Adjustable output voltage with external voltage

LS 1691 BM

Abstract: GDD50S GDI-30F color gd itt series
Contextual Info: GD* Grommet D • Environmental Protection ITT Cannon developed G D * connectors to m eet the • M IL-C -2 4 3 0 8 Com patibility needs of the avionics industry. These connectors • Reliability and V ersatility provide high-density and m oisture protection.

DPS512S8

Contextual Info: 4 Megabit CMOS SRAM D E N S E - P A C D PS512S8N M Ï C R O S Y S T EMS D ESCRIPTION: The DPS512S8N is a M ilitary 512K X 8 high-density, low-power static RAM module comprised of four ceramic 128K X 8 monolithic SRAM's, an advanced high-speed CMOS decoder and decoupling capacitors