D*M HIGH DENSITY Search Results

Contextual Info: DENSE-PAC MICROSYSTEMS 32 Megabit C M O S SRAM D P S1M X32M L/D PS1M X32M W PRELIMINARY DESCRIPTION: PIN-OUT DIAGRAM The D P S 1 M X 3 2 M L /D P S 1 M X 3 2 M W is a 1 M e g x 32 high density, high-speed Static Random Access M em ory SRAM module, intended

fr022

Abstract: MIL-DTL-24308 ASTM-A342
Contextual Info: D Subminiature; MIL-DTL-24308 Space/High Reliability – D*M/D*MA S pace/high reliability D*M and D*MA high performance D Subminiature connectors meet stringent tests for outgassing and residual magnetism. D*M and D*MA connectors meet the performance and dimensional requirements

SILM312

Contextual Info: SMT Power Inductor SILM312 Type Features • ■ ■ ■ ■ ■ ■ Low profile 1,2m m m ax.height S M D type. M agnetically shielded, suitable for high density mounting. Self-leads ,suitable for high density mounting. High energy storage and low D C R .

Contextual Info: E M I L E A D E D FILTERS N O IS E FILTERS D C C O M M O N M O D E C H O K E C O IL m uFfatn PLT09H S e rie s FEATURES • ■ ■ ■ Extended self-resonant frequency M eets FCC, C ISPR , VC CI noise requirem ents High current rating - 3A max. High density m ounting

mpm5192

Contextual Info: MPM5192 MPLD Features Ll J J J _1 J J J General Description C M O S , M ask- Pro g ra m m e d Lo g ic D e v ic e M P L D cap ab le of im plementing high-density custom logic functions High-volume replacement for EPM5192 E P L D designs Zero-power operation (typically 30 )j A standby)

SIH53

Contextual Info: SMT Power Inductor SIH53 Type Features • ■ ■ ■ ■ ■ Sm all size 4 .5 m m *3 .2 m m , low profile (2.8 m m m ax. height) S M D type. U nshielded. S e lf-le a d s , suitable for high density mounting. High e n ergy storage and low D C R . Provided with em bossed c a rrier tap e packing.

SIH32

Contextual Info: SMT Power Inductor SIH32 Type Features • ■ ■ ■ ■ ■ ■ Sm all s ize 3 .2 m m *1 ,8 m m , low profile (2.0 m m m ax. height) S M D type. Unshielded. S e lf-le a d s, suitable for high density mounting. High e n ergy storage and low D C R . Provided with em bossed c arrier tap e packing.

Contextual Info: DENSE-PAC 32 Megabit CMOS SRAM MICROSYSTE M S DESCRIPTION: The D PS1M X 32M L/D PS1M X 32M W is a 1 Meg x 32 high density, high-speed Static Random A ccess M em ory SRAM m odule, intended for high p e rfo rm an ce co m p u te rs and d igital sig n al p ro ce ssin g

epm5130

Abstract: EPM5016
Contextual Info: MPM5130 MPLD □ IJ □ J J □ □ J G S f lG r â l . . Description C M O S , M ask- Pro g ra m m e d Lo g ic D e v ic e M P L D cap ab le of im plementing high-density custom logic functions High-volume replacement for EPM5130 E P L D designs Zero-power operation (typically 25 ¡aA standby)

SI43

Abstract: SI43-100 SI43-101 SI43-120 SI43-150 SI43-180 SI43-1R0 SI43-1R2 SI43-1R5 SI43-1R8
Contextual Info: SMT Power Inductor SI43 Type Features • ■ ■ ■ ■ ■ ■ Low profile 2.5 m m m ax. height S M D type. U nshielded. S e lf-le a d s, suitable for high density mounting. High e n ergy storage and low D C R . Provided with em bossed ca rrier tap e packing.

SIQ65

Abstract: SIQ65-101 SIQ65-102 SIQ65-181
Contextual Info: SMT Power Inductor SIQ65 Type Features • ■ ■ ■ ■ Sm all s ize 6 .2 m m *6 .6 m m , low profile (5.0 m m max. height) S M D type. M ag n etically shielded, suitable for high density mounting. High energy storage and low D C R . Provided with em bossed ca rrier tap e packing.

Contextual Info: M t n t» DENSE-PAC MICROSYSTEMS Aa a ^ "7\ /H -T > M S M 128 Megabit C M O S D D R S D R A M D PD D 16M X 8RLA Y5 D pd d 16m x s r s a y s High Density Memory Device A D V A N C E D IN F O R M A T IO N DESCRIPTION: T h e /ti-D e m ia series is a family of interchangeable memory devices.

1305h

Abstract: 220-7H MSCDB-0905H
Contextual Info: M S C D B -H SER IE] CUTTING-EDGE TECHNOLOGIES OF EMI/EMC SOLUTIONS S M D P o w e r In d u c to rs • FEATURES High power, High saturation inductors. M axim um pow er density. A vailable on tape and reel fo r auto surface m ounting. ■ APPLICATIONS Pow er supply for VTRs.

Contextual Info: □PM DPS512S8P Dense-Pac Microsystems, Inc. 512K X 8 CMOS SRAM MODULE O D ESC R IPT IO N : The D P S5 1 2 S8 P is a 512K X 8 high-density, low-power static R A M module comprised of four 128K X 8 m onolithic S R A M 's, an advanced high-speed C M O S d eco d er and decoupling

Contextual Info: HB56A464EJ Series 4,194,304-word x 64-bit High Density Dynamic RAM Module The H B 56A 464E J belongs to 8 byte D IM M D ual — S tandby m ode (T TL : 504 m W (m ax) In -lin e M e m o ry M o d u le ) fa m ily , a n d h a s b e e n B uffered input ex cep t R A S and D Q

Contextual Info: DENSE-PAC 4 Megabit High Speed C M O S SRAM D PS512S8A P M I C R O S Y S T E M S D E S C R IP T IO N : The DPS512S8AP is a high speed 512K x 8 high-density, low-power static RAM module comprised of four high speed ceramic 128K x 8 monolithic SRAM's, an advanced high-speed CMOS

Contextual Info: EDI8L32256C M D I ELEC1ROMC D 69G N & M C 2S6Kx32 SPAM Module PRELIMINARY 256Kx32 CMOS High Speed Static RAM Features The EDI8L32256C is a high speed, high performance, four megabit density Static FtAM organized as a 256Kx32 bit 256Kx32 bit CMOS Static array.

Contextual Info: 3401-001 D*M High Density Solder Bucket Contacts D*M High Density Solder Bucket contacts compliant to ESA/ESCC 3401-001 Specification Features/Benefits Typical Applications • Compliant with ESA/ESCC specification • Space equipments • Solderable contacts

128-BWDW

Contextual Info: /H -'D c n S tiS D E N S E -P A C M High Density Memory Device i c r o s y s t e m s 4 Megabit High Speed EEPROM DPE128X32Y5 ADVANCED INFORMATION DESCRIPTION: The DPE128X32Y5 is a high-performance Electrically Erasable and Programmable Read O nly M em ory EEPROM module and may

Contextual Info: D P S512S 16U □PM Dense-Pac M icrosystem s. Inc. 512K X 16 CM OS SRAM MODULE O PRELIMINARY D E S C R IP T IO N : T he D P S 5 1 2 S 1 6 U is a 5 12 K X 16 high-density, low-power static R A M m odule com prised of eight 128K X 8 m onolithic SR A M 's, an advanced high-speed

Contextual Info: DPS256S8N Dense-Pac Microsystems, Inc. O MILITARY 256K X 8 C M O S SRAM M O D U LE D ESCRIPTIO N: The D P S2 5 6 S8 N is a Military 256K X 8 high-density, low-power static R A M module comprised of two ceramic 128K X 8 monolithic S R A M 's, an advanced high-speed C M O S decod er and de cou p lin g

Contextual Info: S ig n al In te g rity a t any D istan ce: In-house design, analysis and manufacturing of high speed connectors, circuits and subsystems. Board S pacin gs fro m 3 m m to 6 0 m m : Wide variety of high speed and high density board-to-board connectors. High Speed Connectors

Contextual Info: D-Sub, Metal Shell, High Density F o x c o n rf DV Series P/N Description DV11201-S2 m 0 H1 0 Prefix m Series DV: D-Sub High Density Type m Termination 1: Right Angle Type Œ1 Contact 1: Receptacle . 15 Pin e cm Finish m Contact Gold Flash Plating lOfj" Gold Plating

Contextual Info: NOISE FILTERS D C C O M M O N M O D E CHOKE COIL PLT09H Series FEATURES • ■ ■ ■ Extended self-resonant frequency Meets FCC, CISPR, VCCI noise requirements High current rating - 3A max. High density mounting APPLICATIONS Switching power supplies, digital equipment, CTV, VCR, ECR