CY62148L Search Results

QMI 509 epoxy

Abstract: SUMITOMO eme-6600hr 6600HR SOJ package MSL QMI 509 epoxy datasheet CY7C63001A-SC JESD22 EME6600HR mold compound EME 6600HR
Contextual Info: Cypress Semiconductor Package Qualification Report QTP# 023401 VERSION 2.0 GI July, 2004 32-lead SOIC package using Sumitomo EME 6600HR Mold Compound, MSL1 Cypress Philippines CML-R CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Mira Ben-Tzur Principal Reliability Engineer

Contextual Info: fax id: 1079 CY62148 PRELIMINARY W / C Y P R E S S _ 512Kx 8 Static RAM Features an automatic power-down feature that reduces power con­ sumption by more than 99% when deselected. • 4 .5V -5.5V operation • CMOS for optimum speed/power • Low active power

32 pin soic 450mil

Abstract: CY62128LL-70SI SOIC 32
Contextual Info: fax id: 1079 W / CYPRESS PRELIMINARY_ CY62148 512 K x 8 Static RAM an automatic power-down feature that reduces power con­ sumption by more than 99% when deselected. Features • 4.5V-5.5V operation • CMOS for optimum speed/power • Low active power

Contextual Info: fax id: 1079 CY62148 512K x 8 Static RAM an automatic power-down feature that reduces power con­ sumption by more than 99% when deselected. Featu res • 4.5V -5.5V operation • CMOS for optimum speed/power • Low active power Writing to the device is accomplished by taking chip enable

CY62148

Abstract: CY62148-70SI CY62148L-70SI
Contextual Info: fax id: 1079 1CY 621 48 CY62148 PRELIMINARY 512K x 8 Static RAM Features an automatic power-down feature that reduces power consumption by more than 99% when deselected. • 4.5V−5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW max.

CY62148

Abstract: CY62148-55 CY62148-70SC CY62148L-55SC CY62148L-70SC
Contextual Info: fax id: 1079 W CYPRESS CY62148 PRELIMINARY 5 1 2 K x 8 Static RAM an automatic power-down feature that reduces power con­ sumption by more than 99% when deselected. Features • 4.5V -5.5V operation • CMOS for optimum speed/power • Low active power Writing to the device is accomplished by taking chip enable

CY62148LL-70SC

Abstract: variable frequency drive circuit diagram CY62148 SOIC 32
Contextual Info: 1CY62148 CY62148 512K x 8 Static RAM Features an automatic power-down feature that reduces power consumption by more than 99% when deselected. • 4.5V − 5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW max. • Low standby power (L version)

TSOP44 Package

Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
Contextual Info: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments

Contextual Info: fax id: 1079 W CYPRESS CY62148 PRELIMINARY 51 2 Kx 8 Static RAM an automatic power-down feature that reduces power con­ sumption by more than 99% when deselected. Features • 4.5V -5.5V operation • CMOS for optimum speed/power • Low active power Writing to the device is accomplished by taking chip enable

CY62148-70ZSC

Abstract: CY62148 CY62148-70SC CY62148-70SI CY62148L-70SC CY62148L-70ZSC CY62148LL-70SC CY62148LL-70ZSC 1838 t pin diagram
Contextual Info: CY62148 PRELIMINARY 512K x 8 Static RAM Features an automatic power-down feature that reduces power consumption by more than 99% when deselected. • 4.5V–5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW max. • Low standby power (L version)

32 pin soic 450mil

Abstract: CY62128LL-70SI s34 diode CY62148 CY62128LL-70SC CY62148-70SC CY62148-70SI CY62148-70ZSC CY62148L-70SC CY62148L-70ZSC
Contextual Info: fax id: 1079 PRELIMINARY CY62148 512K x 8 Static RAM Features an automatic power-down feature that reduces power consumption by more than 99% when deselected. • 4.5V−5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW max.