CY62128DV Search Results

Contextual Info: 28DV30 ADVANCE INFORMATION CY62128DV30 MoBL 128K x 8 Static RAM Features • • • • • • • • • portable applications, such as Wireless LAN. The device also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not

TSOP 32 thermal resistance

Abstract: CY62128DV cy62128dv30ll-55ZXI SOIC-32L
Contextual Info: CY62128DV30 1-Mb 128K x 8 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip

Contextual Info: CY62128DV30 1-Mb 128K x 8 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip

CY62128DV30

Abstract: CY62128EV30 CY62128EV30LL CY62128EV30LL-45SXI CY62128EV30LL-45ZAXI CY62128EV30LL-45ZXI
Contextual Info: CY62128EV30 MoBL 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ■ Temperature ranges: ❐ Industrial: –40 °C to +85 °C ■ Wide voltage range: 2.2 V to 3.6 V ■ Pin compatible with CY62128DV30

Contextual Info: CY62128DV30 1-Mb 128K x 8 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip

Contextual Info: CY62128DV30 MoBL 1-Mb 128K x 8 Static RAM Features • • • • • • • • • an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip Enable 1

CY62128DV30LL-55ZI

Abstract: CY62128DV30LL-70SI CY62128DV30L-55ZI CY62128DV30 CY62128DV30L-55SI CY62128V
Contextual Info: CY62128DV30 MoBL 1 Mb 128K x 8 Static RAM Features • • • • • • • • power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip Enable 1

CY62128DV30LL-55ZI

Abstract: CY62128DV30LL-70SXI CY62128DV30LL-70ZXI CY62128DV30 CY62128DV30L-55SI CY62128V CY62128DV30LL-70ZAXI
Contextual Info: CY62128DV30 1-Mb 128K x 8 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip

CY62128DV30

Abstract: CY62128DV30L-55SI CY62128V TSOP 32 thermal resistance
Contextual Info: CY62128DV30 1-Mb 128K x 8 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip

Contextual Info: CY62128DV30 MoBL PRELIMINARY 1 Mb 128K x 8 Static RAM Features • • • • • • • • Very high speed: 55 ns Wide voltage range: 2.2V to 3.6V Pin compatible with CY62128V Ultra-low active power — Typical active current: 0.5 mA @ f = 1 MHz — Typical active current: 5 mA @ f = fMAX

Contextual Info: CY62128DV30 MoBL 1 Mb 128K x 8 Static RAM Features • • • • • • • • power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip Enable 1

CY62128DV30

Abstract: CY62128EV30 CY62128EV30LL CY62128EV30LL-45SXI CY62128EV30LL-45ZAXI CY62128EV30LL-45ZXA CY62128EV30LL-45ZXI CY62128EV30LL-55ZXE
Contextual Info: CY62128EV30 MoBL 1 Mbit 128K x 8 Static RAM Functional Description[1] Features • Very high speed: 45 ns • Temperature ranges– The CY62128EV30 is a high performance CMOS static RAM module organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active

CS16LV40963

Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
Contextual Info: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D

Contextual Info: CY62128EV30 MoBL 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62128EV30 is a high performance CMOS static RAM module organized as 128K words by 8-bits. This device features

Contextual Info: DLP-FPGA LEAD-FREE USB - FPGA MODULE MOSFET Power Switch 5V 3.3V PWREN USB Type 'B' Connector to Host Windows/ Linux/Mac PC 5V VREGs VCCIO Dual Channel USB IC VCC USBDP USBDM XILINX FPGA CH B 50-pin, 0.9-inch Wide Interface Headers XC3S250E -4TQ144 FTDI FT2232D

Contextual Info: CY62128EV30 MoBL 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Functional Description Features The CY62128EV30 is a high performance CMOS static RAM module organized as 128K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This

K6X0808C1D-BF55

Abstract: HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L
Contextual Info: cross_reference Density Organization Alliance Alliance Part Number Alliance Package Alliance Speed Samsung Samsung Part Number Cypress Cypress Part Number Cypress Package Cypress Package Code Cypress Speed IDT Part Number IDT Package IDT Package Code IDT Speed ISSI

TC554161A

Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
Contextual Info: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA

CY62128EV301

Contextual Info: CY62128EV30 MoBL 1-Mbit 128K x 8 Static RAM 1-Mbit (128K x 8) Static RAM Features Functional Description • Very high speed: 45 ns ■ Temperature ranges: ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C ❐ Automotive-E: –40°C to +125°C

Contextual Info: CY62128EV30 MoBL 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62128EV30 is a high performance CMOS static RAM module organized as 128K words by 8-bits. This device features

HM628100

Abstract: HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006
Contextual Info: BSI Low Power SRAM Cross Reference Table Nov-30-2008 Density Configuration Part No. Speed ns Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax Voltage (V) Samsung Cypress 2.4~5.5 x8 BS62LV256 70 0.05uA 0.1uA 0.4uA 1mA 20mA 35mA BS62LV1027 55/70 0.1uA

TC55VEM416AXBN

Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
Contextual Info: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA

K6F1008V2C-YF55

Abstract: S34 ST 55NS BS62LV1028 CY62128DV30LL-55ZAI CY62128VLL-55ZAI 650-0029
Contextual Info: APPROVED MANUFACTURERS LIST FOR WEB PARTS ITEM NUMBER 650-0029 -WEB 650-0029 PART DESCRIPTION SRAM 128K X8 3.3V 55NS STSOP SMTR REVISION HISTORY Rev F G H ECO # Description of Change Proj Eng E12147 UPDATE DATASHEETS AND RELEASE TO WEB STORE. E12762 ADD NEW CYPRESS P/N AS THEIR REPLACEMENT

24-PIN

Abstract: CY62128DV30 CY62128EV30 CY62128EV30LL CY62128EV30LL-45SXI CY62128EV30LL-45ZAXI CY62128EV30LL-45ZXA CY62128EV30LL-45ZXI
Contextual Info: CY62128EV30 MoBL 1 Mbit 128K x 8 Static RAM Features Functional Description The CY62128EV30[1] is a high performance CMOS static RAM module organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This