CY62127 Search Results

A12C

Abstract: A14C A15C CY62127V
Contextual Info: CY62127V V CYPRESS 64K x 16 Static RAM Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (l/0-| through l/0 8), is written into the location specified on the address pins (Aq

A12C

Abstract: A14C A15C CY62127V
Contextual Info: CY62127V V CYPRESS 64K x 16 Static RAM Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (l/0-| through l/0 8), is written into the location specified on the address pins (Aq

CY62127DV18

Contextual Info: CY62127DV18 MoBL2 ADVANCE INFORMATION 1M 64K x 16 Static RAM Features • Very high speed: 55 ns • Voltage range: 1.65V to 1.95V • Ultra-low active power — Typical active current: 0.5 mA @ f = 1 MHz — Typical active current: 2.5 mA @ f = fMAX • Ultra-low standby power

Contextual Info: fax id: 1099 CY62127V PRELIMINARY ¿up P Y P R F ^ R \œt*> J : JT J» l i j f e s J t s J 64K x 16 Static RAM Features Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (l/0-| through l/Og), is

CY62127BV

Abstract: CY62127BVLL-55ZI
Contextual Info: CY62127BV MoBL 1M 64K x 16 Static RAM Features significantly reduces power consumption when addresses are not toggling, or when deselected (CE HIGH or both BLE and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE

Contextual Info: CY62127DV30 MoBL 1 Mb 64K x 16 Static RAM Features • • • • • • • • Very high speed: 55 and 70 ns Wide voltage range: 2.2V to 3.6V Pin compatible with CY62127BV Ultra-low active power — Typical active current: 0.85 mA @ f = 1 MHz — Typical active current: 5 mA @ f = fMAX

Contextual Info: CY62127DV30 MoBL 1-Mbit 64 K x 16 Static RAM CY62127DV30 MoBL® 1-Mbit (64 K × 16) Static RAM Features • Temperature ranges ❐ Industrial: –40 °C to 85 °C ■ Very high speed: 55 ns ■ Wide voltage range: 2.2 V to 3.6 V ■ Pin compatible with CY62127BV

CY62127BV

Abstract: CY62127DV30 CY62127DV30L CY62127DV30LL
Contextual Info: CY62127DV30 CY62127DV30 MOBL R 1MB (64K X 16) STATIC RAM portable applications such as cellular telephones. The device Features • Temperature Ranges — Industrial: –40°C to 85°C — Automotive: –40°C to 125°C • Very high speed: 45 ns • Wide voltage range: 2.2V to 3.6V

CY62127DV20

Contextual Info: CY62127DV20 MoBL2 ADVANCE INFORMATION 1M 64K x 16 Static RAM Features • Very high speed: 55 ns • Wide voltage range: 1.65V to 2.2V • Ultra-low active power — Typical active current: 0.5 mA @ f = 1 MHz — Typical active current: 3.75 mA @ f = fMAX

Contextual Info: CY62127DV30 MoBL 1 Mb 64K x 16 Static RAM Features • • • • • • • • Very high speed: 55 and 70 ns Wide voltage range: 2.2V to 3.6V Pin compatible with CY62127BV Ultra-low active power — Typical active current: 0.5 mA @ f = 1 MHz — Typical active current: 5 mA @ f = fMAX

Contextual Info: CY62127DV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. The

Contextual Info: fax id: 1099 CY62127V PRELIMINARY 64K x 16 Static RAM Features Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (l/0-| through l/Og), is written into the location specified on the address pins (Aq

Contextual Info: CY62127DV30 MoBL 1-Mb 64K x 16 Static RAM Features • Temperature Ranges — Industrial: –40°C to 85°C — Automotive: –40°C to 125°C • Very high speed: 45 ns • Wide voltage range: 2.2V to 3.6V • Pin compatible with CY62127BV • Ultra-low active power

Contextual Info: 27DV30 ADVANCE INFORMATION CY62127DV30 MoBL 64K x 16 Static RAM Features • • • • • • • • • High speed: 55 ns Wide voltage range: 2.2V–3.6V Pin Compatible with CY62127BV Ultra-low active power — Typical active current: 0.5 mA @ f = 1MHz

Contextual Info: CY62127DV30 MoBL 1-Mbit 64 K x 16 Static RAM CY62127DV30 MoBL® 1-Mbit (64 K × 16) Static RAM Features applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. The

CY62127BV

Abstract: CY62127DV30 CY62127DV30L CY62127DV30LL
Contextual Info: CY62127DV30 MoBL 1 Mb 64K x 16 Static RAM Features • Very high speed: 45 ns • Wide voltage range: 2.2V to 3.6V • Pin compatible with CY62127BV • Ultra-low active power — Typical active current: 0.85 mA @ f = 1 MHz — Typical active current: 5 mA @ f = fMAX

CY62127BV

Abstract: CY62127DV30 CY62127DV30L CY62127DV30LL
Contextual Info: CY62127DV30 1-Mb 64K x 16 Static RAM Features • Temperature Ranges — Industrial: –40°C to 85°C — Automotive: –40°C to 125°C • Very high speed: 45 ns • Wide voltage range: 2.2V to 3.6V • Pin compatible with CY62127BV • Ultra-low active power

Contextual Info: CY62127DV30 1-Mb 64K x 16 Static RAM Features • Temperature Ranges — Industrial: –40°C to 85°C — Automotive: –40°C to 125°C • Very high speed: 45 ns • Wide voltage range: 2.2V to 3.6V • Pin compatible with CY62127BV • Ultra-low active power

CY62127DV18

Contextual Info: CY62127DV18 MoBL2 PRELIMINARY 1 Mb 64K x 16 Static RAM Features • Very high speed: 55 ns • Voltage range: 1.65V to 2.2V • Ultra-low active power — Typical active current: 0.5 mA @ f = 1 MHz — Typical active current: 3.75 mA @ f = fMAX • Ultra-low standby power

L0820

Abstract: CY62127BV CY62127DV30 CY62127DV30LL
Contextual Info: CY62127DV30 MoBL 1-Mbit 64 K x 16 Static RAM CY62127DV30 MoBL® 1-Mbit (64 K × 16) Static RAM Features • Temperature ranges ❐ Industrial: –40 °C to 85 °C ■ Very high speed: 55 ns ■ Wide voltage range: 2.2 V to 3.6 V ■ Pin compatible with CY62127BV

CY62127DV20

Contextual Info: CY62127DV20 MoBL2 ADVANCE INFORMATION 1M 64K x 16 Static RAM Features • Very high speed: 55 ns • Wide voltage range: 1.65V to 2.2V • Ultra-low active power — Typical active current: 0.5 mA @ f = 1 MHz — Typical active current: 3.75 mA @ f = fMAX

CY62127BV

Abstract: CY62127BVLL-55ZI
Contextual Info: CY62127BV MoBL 1M 64K x 16 Static RAM Features significantly reduces power consumption when addresses are not toggling, or when deselected (CE HIGH or both BLE and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE

CY62127DV18

Contextual Info: CY62127DV18 MoBL2 PRELIMINARY 1 Mb 64K x 16 Static RAM Features • Very high speed: 55 ns • Voltage range: 1.65V to 2.2V • Ultra-low active power — Typical active current: 0.5 mA @ f = 1 MHz — Typical active current: 3.75 mA @ f = fMAX • Ultra-low standby power

Contextual Info: CY62127DV30 MoBL PRELIMINARY 1 Mb 64K x 16 Static RAM Features • • • • • • • • Very high speed: 55 ns Wide voltage range: 2.2V to 3.6V Pin compatible with CY62127BV Ultra-low active power — Typical active current: 0.5 mA @ f = 1 MHz — Typical active current: 5 mA @ f = fMAX