CURRENT TAIL TIME OF IGBT Search Results

POWER BJTs

Abstract: AN1540 IXYS SCR Gate Drive vertical pnp bjt failure analysis IGBT Drive Base BJT Nippon capacitors IGBT tail time
Contextual Info: MOTOROLA Order this document by AN1540/D SEMICONDUCTOR APPLICATION NOTE AN1540 Application Considerations Using Insulated Gate Bipolar Transistors IGBTs Prepared by: C.S. Mitter Motorola Inc. DEVICE CHARACTERISTICS The recently introduced Insulated Gate Bipolar Transistor

igbts

Abstract: local lifetime mitsubishi igbt cm
Contextual Info: 3DJHRI AN INVESTIGATION OF TURN-OFF PERFORMANCE OF PLANAR AND TRENCH GATE IGBTS UNDER SOFT AND HARD SWITCHING Hideo Iwamoto*, Hisao Kondo*, Satoshi Mori*, John F. Donlon*, and Akira Kawakami* *Mitsubishi Electric Corporation, Power Device Division, Fukuoka, Japan

static characteristics of mosfet and igbt

Abstract: IGBT tail time 2A mosfet igbt driver stage mosfet, igbt, transistor Semiconductor Group igbt driver igbt SIEMENS SIEMENS thyristor main disadvantages of mosfet comparison of IGBT and MOSFET transistor igbt
Contextual Info: Conductivity-Modulated FETs-IGBT Up to a reverse voltage of VDS ≤ 200 V, power MOSFETs are superior in all respects to any other switching devices components. With a supply voltage of VB > 200 V, the bipolar transistor has a lower saturation voltage VCE sat ≤ VDSon and is cheaper. In comparison with a

3EML

Abstract: C-580 D-12 IRGB420U IRGB430U diodes ir
Contextual Info: PD - 9.784A International [ÏÔR]Rectifier IRGB420U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Rg. 1 for Current vs. Frequency curve

IGBT tail time

Abstract: igbt simulation NATIONAL IGBT local lifetime IGBT cross IGBT PNP Semiconductor Group igbt mitsubishi igbt cm
Contextual Info: 168 IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, VOL. 38, NO. 1, JANUARY/FEBRUARY 2002 A New Punch-Through IGBT Having a New n-Buffer Layer Hideo Iwamoto, Hideki Haruguchi, Yoshifumi Tomomatsu, John F. Donlon, Senior Member, IEEE, and Eric R. Motto, Member, IEEE

CMI-12024SI

Contextual Info: Preliminary COMPOSITE MODULES INCORPORATED Single N-Channel IGBT In A Hermetic TO-258 Package CMI-12024SI Features: u u u u u u SMALL CASE SIZE HIGH INPUT IMPEDANCE HERMETIC PACKAGE LOW Vsat FAST SWITCHING AVAILABLE WITH FREE WHEELING DIODE u ISOLATED PACKAGE

2A mosfet igbt driver stage

Abstract: igbt qualification circuit S-IGBT igbt 600V IGBT 600V 16 siemens igbt UPS SIEMENS zvs flyback driver BUP410 SGP06N60
Contextual Info: TECHNOLOGY A MOSFET alternative for switching frequencies up to more than 300 kHz High-speed 600V IGBT in NPT technology Because of its many advantages over PT technology, NPT technology has gained increasing acceptance for IGBTs with breakdown voltages of over 1 kV. Siemens is now continuing this logical progression with

22a ic

Abstract: IRGPH30S
Contextual Info: Preliminary Data Sheet PD - 9.1139 IRGPH30S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz VCES = 1200V VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 13A

TRANSISTOR BIPOLAR 400V 20A

Abstract: igbt 20A 1200v IRGPH40S
Contextual Info: Preliminary Data Sheet PD - 9.1085 IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz VCES = 1200V VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 20A

igbt 20A 1200v

Abstract: TRANSISTOR BIPOLAR 400V 20A IRGPH40S
Contextual Info: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1085 IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz

IGBT 500V 35A

Abstract: 600v 30a IGBT what is fast IGBT transistor APT0408 APT5014B2LL IGBT tail time MOSFET 1200v 30a snubber circuit Current tail time of IGBT dodge IGBT structure
Contextual Info: Technology to the Next Power Application Note APT0408 IGBT Technical Overview Distinguishing Features Application Tips Jonathan Dodge, P.E. Applications Engineering Manager Advanced Power Technology 29 November 2004 TECHNOLOGY TO THE NEXT POWER 1 What is an IGBT?

IRGPH40M

Contextual Info: Preliminary Data Sheet PD - 9.1029A IRGPH40M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

c313 TRANSISTOR DATA

Abstract: C-313 D-12 IRGBC40M
Contextual Info: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1074 IRGBC40M Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses

TRANSISTOR BIPOLAR 400V 20A

Abstract: igbt 20A 1200v IRGPH40S igbt 1200V 20A
Contextual Info: Preliminary Data Sheet PD - 9.1085 IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz VCES = 1200V VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 20A

c313 TRANSISTOR DATA

Abstract: c313 transistor same C313 MOSFET 40A 600V C-313 D-12 IRGBC40M
Contextual Info: Preliminary Data Sheet PD - 9.1074 IRGBC40M Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

IRGPH40M

Abstract: 400V 10A 10KHz power MOSFET
Contextual Info: Preliminary Data Sheet PD - 9.1029A IRGPH40M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

c313 TRANSISTOR DATA

Abstract: C-313 D-12 IRGBC40M
Contextual Info: Preliminary Data Sheet PD - 9.1074 IRGBC40M Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

IRGMIC50U

Abstract: DIODE 27A
Contextual Info: PD -90813A IRGMIC50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE C Features • • • • • VCES = 600V Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Ultra Fast operation > 10 kHz

TO-3P Jedec package outline

Abstract: IRGPH50S
Contextual Info: Preliminary Data SheetPD - 9.760 IRGPH50S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve

IRGPH50S

Contextual Info: Preliminary Data SheetPD - 9.760 IRGPH50S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve

IRGPH50S

Contextual Info: Previous Datasheet Index Next Data Sheet Preliminary Data SheetPD - 9.760 IRGPH50S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve

VQE 22

Contextual Info: Preliminary Data Sheet PD - 9.1085 International IsHRectifier IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all “tail" losses • Optimized for line frequency operation to 400H z V CES = 1 200V

g10 smd transistor

Abstract: C347 gFE smd diode AN-994 D-12 IRGBC40M-S SMD-220 transistor c347 c347 transistor
Contextual Info: Preliminary Data Sheet PD - 9.1135 IRGBC40M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

Contextual Info: Preliminary Data Sheet PD - 9.1029 bitemational 11»]Rectifier IRGPH40M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 1 0ps @ 125°C, V qe = 15V • Switching-loss rating includes all “tail" losses • Optimized for medium operating frequency 1 to