ina 124
Abstract: CT2525ALN "beryllium oxide" HR0500 ct2335 SMT3725ALN SC0066M
Contextual Info: SES 1 Index Tedmolo^ii L Product Index EM C P art Num ber Description Pow er Level W Substrate M aterial M ax VSWR M ax Frequency (G Hz) Page N um ber TVA Series Thermopads 2 Alum ina 1.30:1 6 GHz 12 M TVAXXXXN XX Thermopads 0.2 A lum ina 1.30:1 18 GHz
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42tvar0300hr0500ts0300+12ts0300wts0400ts0500ts0500w1ts0500wts0500wb1ina 124ct2525alnberyllium oxidect2335smt3725alnsc0066m
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CT2525ALN
Abstract: CT2010A
Contextual Info: f*TTTS Tedm ohm/ Term inations Chips - Standard EMC's high power chip terminations are optimized fo r RF performance. All EMC chips are designed to minimize the variability o f capacitive reactance. Localized hot spots associated with trimming have been eliminated. Reduced
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ct2525ct3518act2335alnct2335+8ct3523tct3725alnct3725talnct3725ct3737alnct3737ct2525alnct2010a
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CT-1005
Abstract: g 0247 0372
Contextual Info: lin T u l litologi/ Chips - Standard Term inations S election Table Power W Substrate Frequency Max. Avg. (GHz) VSWR Type 2 5 5 10 15 15 15 15 20 20 20 40 50 80 85 100 120 120 150 150 150 250 * BeO Alumina AIN BeO BeO AIN BeO AIN BeO AIN Alumina AIN BeO
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ct0402ct2010act0505alnct0505+9ct1005ct1005talnct1206ct1206alnct2010ct2010alnct-1005g 02470372
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CT2525ALN
Abstract: CT3523 CT2010A
Contextual Info: Chips – Standard Terminations EMC’s high power chip terminations are optimized for RF performance. All EMC chips are designed to minimize the variability of capacitive reactance. Localized hot spots associated with trimming have been eliminated. Reduced
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ct2525ct3518act2335alnct2335+9ct3523tct3725alnct3725talnct3725ct3737alnct3737ct2525alnct3523ct2010a
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