CT 60 TRANSISTOR Search Results

marking BS SOT23

Abstract: 2N7000 circuits
Contextual Info: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 ) s ( ct 2 1 • Low Qg ■ Low threshold drive SOT23-3L Application

BD901

Abstract: case BD901 BD899 BD645
Contextual Info: File Number 1240 BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 HARR IS SENICON] S E CT OR SbE D 8-Ampere N-P-N Darlington Power Transistors • 43 02 271 GDMDtifiS 230 IHAS 45-60-80-100-Volts, 70 Watts TERMINAL DESIGNATIONS Gain of 750 at 4 A BD895A, BD897A, BD899A)

SMP50N06-25

Abstract: SMP50N06
Contextual Info: CT*S i licoriix SMP50N06-25 in c o rp o ra te d N-Channel Enhancement Mode Transistor 25 milli ohm rDS 0N TO-22 OAB TOP VIEW PRODUCT SUMMARY O V(BR)DSS rDS(ON) (il) Id (A) 60 0.025 46 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE 12 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

2N6576

Abstract: 2N6576 equivalent
Contextual Info: File Number 1152 HARR IS S E M I C O N D S E CT OR 2N6576, 2N6577, 2N6578 5bE ]> • 43 D2 27 1 OD HG S^ l bS3 H H A S 15-Ampere N-P-N Darlington Power Transistors ~ F 3 3 'Z 9 60, 90, 120 Volts, 120 Watts Gain of 2000 at 4 A TERMINAL DESIGNATIONS Features:

IRF162

Abstract: IRF152 IRF161 IRF163 IRF150 1RF16 circuits of IRF150 MOSFET IRF150 IRF151 IRF153
Contextual Info: Standard Power MOSFETs File Number 1»24 IRF150, IRF151, IRF152, IRF153 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 33 A and 40 A, 60 V - 100 V rDs on = 0.055 Ct and 0.08 Ci N -C H A N N E L E N H A N C E M E N T M O D E

Contextual Info: P 35-2^1 File Number 610 HARRI S SE MI C O N D S E CT OR 2N6386, 2N6387, 2N6388 SbE I 430 227 1 0 0 4 Q 5M 7 5Mb H H A S 10-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 40-60-80 Volts, 65 Watts Gain of 1000 at 5 A 2N6387,2N6388 Gain of 1000 at 3 A (2N6386)

2N6533

Abstract: Ha 100b 2cs24 2n651
Contextual Info: HARRI S S E I U C O N D S E CT OR SbE » • 43D 22 71 0 D 4 D S 7 2 7T1 B I H A S 2N6530,2N6531,2N6532, 2N6533 File Number 8 7 3 7 = 3 3 -2 ? 8-Ampere N-P-N Darlington Power Transistors 80,100,120 Volts, 60 Watts Gain of 1000 at 5 A 2N6530, 2N6532 Gain of 1000 at 3 A (2N6533)

sem 2005

Contextual Info: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF6522–60/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-60 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz and specified for the GSM 925 – 960 MHz band. The high

rectifier s4 79A

Abstract: 1R2132 3 phase 75kW motor soft circuit diagram 1r2152 215 dc brake rectifier motor smk 630 IR2132J UL84 230v dc motor drive circuit diagram 1 HP SINGLE PHASE induction motor speed control using pwm inverter
Contextual Info: International I R Rectifier PD6.071C PRELIMINARY IRPT1056 P C M f iR m A IN In te g ra te d P o w e r S ta g e fo r 1 h p M o t o r D riv e s • 1 bp 0.75kW power output Industrial rating ct 1 5 0 % overiood for 1 minute . 1 8 0 -24 0 V AC input, 50/60 Hz

CD40258

Abstract: CD4001B CD4002B CD4025B 8y transistor cd4001B HARRIS
Contextual Info: • 44E D HA RR IS S E M I C O N D SE CT OR 4 3 D 2 27 1 0 0 3 7 3 5 2 3 Bi HAS C D 4001B , C D 4002B , C D 4025B Types H A R R IS CMOS NOR Gates F e a tu re s : • Propagation delay time s 60 ns typ. at C l * 50 pF, V q d = 10 V * Buffered inputs and outputs

silect

Abstract: 2S503 N4060 bc182l 2N2483 2N3707 2N3709 2N929 2N930 2S501
Contextual Info: Silicon Transistors T ype C ase No. C o ^ <u M axim um R a tin g s at25°C amb. S P E C IA L C h a ra c te ris tic s FEATURES p <0 c a> o « O w fT h FE V CE SAT ' V CB V CE V EB V V V A M in. P.o, w Max. mA mA M in. 'c *B Max. M c/s mA mA V N PN Low Level

tf5r21zz

Contextual Info: Audio I DO-T Transistor Transformers L o c a t in g L in e Type No. M IL P a rt N o . 1 D 0 -T 4 4 M 2 7 /1 7 2 01 ? D O -T 2 9 M 2 7 /1 7 2 - 0 2 3 D 0 -T 1 2 4 D 0 -T 1 3 P r l. Im p . O 8 0 CT UNIT LOCATION KEY Located Type No. on Line D O -T 1 D O -T 2

NJM2368

Abstract: NJM2368D NJM2368E NJM2368M NJM2368V
Contextual Info: NJM2368 SWITCHING REGULATOR CONTROL IC FOR FLYBACK •GENERAL DESCRIPTION ■PACKAGE OUTLINE The NJM2368 is a high speed switching regulator control IC which can operate at low voltage. It uses a totempole output circuit , so that it can drive an external Bipolar Transistor directly.

Contextual Info: IRGP30B120KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT C Features • • • • • • • • VCES = 1200V Low VCE on Non Punch Through (NPT) Technology Low Diode VF (1.76V Typical @ 25A & 25°C)

DMP14

Abstract: NJM2381 NJM2381D NJM2381M NJM2381V SSOP10
Contextual Info: NJM2381 SWITCHING REGULATOR CONTROL IC FOR FLYBACK WITH CURRENT SENSE AMPLIFIER •GENERAL DESCRIPTION ■PACKAGE OUTLINE The NJM2381 is a low voltage operation DC/DC converter control IC. It features totem pole output directly driving external bipolar transistor and operates at high switching frequency

Contextual Info: NJM2381 SWITCHING REGULATOR CONTROL IC FOR FLYBACK WITH CURRENT SENSE AMPLIFIER •GENERAL DESCRIPTION ■PACKAGE OUTLINE The NJM2381 is a low voltage operation DC/DC converter control IC. It features totem pole output directly driving external bipolar transistor and operates at high switching frequency

600V 25A Ultrafast Diode

Abstract: GE power diode IC OZ 9936 in 4436 Ir 900v 60a ir igbt 1200V 40A 035H IRGP30B120KD-E PW80 irgp30b120
Contextual Info: PD- 93818A IRGP30B120KD-E Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 s Short Circuit Capability

IRGP30B60

Abstract: C-150 IRGP30B60KD-E
Contextual Info: PD - 94388A IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

njm2377

Abstract: NJM2377M NJM2377D NJM2377R NJM2377V current amplifire circuit diagram operation amplifire circuit applications
Contextual Info: NJM2377 SWITCHING REGULATOR CONTROL IC •GENERAL DESCRIPTION ■PACKAGE OUTLINE The NJM2377 is a high speed low voltage operation switching regulator control IC. It features a totem pole driver circuit that can directly drive an external Bipolar transistor.

Contextual Info: NJM2377 SWITCHING REGULATOR CONTROL IC GENERAL DESCRIPTION PACKAGE OUTLINE The NJM2377 is a high speed low voltage operation switching regulator control IC. It features a totem pole driver circuit that can directly drive an external Bipolar transistor. The NJM2377 is suitable for potable applications, including

Contextual Info: NJM2377 SWITCHING REGULATOR CONTROL IC •GENERAL DESCRIPTION ■PACKAGE OUTLINE The NJM2377 is a high speed low voltage operation switching regulator control IC. It features a totem pole driver circuit that can directly drive an external Bipolar transistor.

njm2377

Abstract: NJM2377V current amplifire circuit diagram NJM2377D NJM2377M NJM2377R
Contextual Info: NJM2377 SWITCHING REGULATOR CONTROL IC •GENERAL DESCRIPTION ■PACKAGE OUTLINE The NJM2377 is a high speed low voltage operation switching regulator control IC. It features a totem pole driver circuit that can directly drive an external Bipolar transistor.

diode 30a 400v

Abstract: 12V 30A diode 1085 CT 600v 30a IGBT C-150 IRGP30B60KD-E
Contextual Info: PD - 94388B IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

I.C LA 3778

Abstract: transistor on 4436 IRGP30B120KD-E AK 2118 250 KD res transistor VCE 1000V 30A GE-5045
Contextual Info: PD- 93818 IRGP30B120KD-E Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability