Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CT 60 TRANSISTOR Search Results

    CT 60 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    93425ADM/B
    Rochester Electronics LLC 93425 - 1K X 1 TTL SRAM PDF Buy
    27S185DM/B
    Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 PDF Buy

    CT 60 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    marking BS SOT23

    Abstract: 2N7000 circuits
    Contextual Info: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 ) s ( ct 2 1 • Low Qg ■ Low threshold drive SOT23-3L Application


    Original
    2N7000 2N7002 OT23-3L, OT23-3L marking BS SOT23 2N7000 circuits PDF

    BD901

    Abstract: case BD901 BD899 BD645
    Contextual Info: File Number 1240 BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 HARR IS SENICON] S E CT OR SbE D 8-Ampere N-P-N Darlington Power Transistors • 43 02 271 GDMDtifiS 230 IHAS 45-60-80-100-Volts, 70 Watts TERMINAL DESIGNATIONS Gain of 750 at 4 A BD895A, BD897A, BD899A)


    OCR Scan
    BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 45-60-80-100-Volts, BD901 case BD901 BD899 BD645 PDF

    SMP50N06-25

    Abstract: SMP50N06
    Contextual Info: CT*S i licoriix SMP50N06-25 in c o rp o ra te d N-Channel Enhancement Mode Transistor 25 milli ohm rDS 0N TO-22 OAB TOP VIEW PRODUCT SUMMARY O V(BR)DSS rDS(ON) (il) Id (A) 60 0.025 46 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE 12 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)


    OCR Scan
    SMP50N06-25 SMP50N06-25 SMP50N06 PDF

    2N6576

    Abstract: 2N6576 equivalent
    Contextual Info: File Number 1152 HARR IS S E M I C O N D S E CT OR 2N6576, 2N6577, 2N6578 5bE ]> • 43 D2 27 1 OD HG S^ l bS3 H H A S 15-Ampere N-P-N Darlington Power Transistors ~ F 3 3 'Z 9 60, 90, 120 Volts, 120 Watts Gain of 2000 at 4 A TERMINAL DESIGNATIONS Features:


    OCR Scan
    2N6576, 2N6577, 2N6578 15-Ampere O-204AA 2N6578 2N6576 2N6576 equivalent PDF

    IRF162

    Abstract: IRF152 IRF161 IRF163 IRF150 1RF16 circuits of IRF150 MOSFET IRF150 IRF151 IRF153
    Contextual Info: Standard Power MOSFETs File Number 1»24 IRF150, IRF151, IRF152, IRF153 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 33 A and 40 A, 60 V - 100 V rDs on = 0.055 Ct and 0.08 Ci N -C H A N N E L E N H A N C E M E N T M O D E


    OCR Scan
    IRF150, IRF151, IRF152, IRF153 IRF152 IRF153 75BVDSS IRF162 IRF161 IRF163 IRF150 1RF16 circuits of IRF150 MOSFET IRF150 IRF151 PDF

    Contextual Info: P 35-2^1 File Number 610 HARRI S SE MI C O N D S E CT OR 2N6386, 2N6387, 2N6388 SbE I 430 227 1 0 0 4 Q 5M 7 5Mb H H A S 10-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 40-60-80 Volts, 65 Watts Gain of 1000 at 5 A 2N6387,2N6388 Gain of 1000 at 3 A (2N6386)


    OCR Scan
    2N6386, 2N6387, 2N6388 10-Ampere 2N6387 2N6388) 2N6386) O-22QAB PDF

    rectifier s4 79A

    Abstract: 1R2132 3 phase 75kW motor soft circuit diagram 1r2152 215 dc brake rectifier motor smk 630 IR2132J UL84 230v dc motor drive circuit diagram 1 HP SINGLE PHASE induction motor speed control using pwm inverter
    Contextual Info: International I R Rectifier PD6.071C PRELIMINARY IRPT1056 P C M f iR m A IN In te g ra te d P o w e r S ta g e fo r 1 h p M o t o r D riv e s • 1 bp 0.75kW power output Industrial rating ct 1 5 0 % overiood for 1 minute . 1 8 0 -24 0 V AC input, 50/60 Hz


    OCR Scan
    IRPT1056 80-240V IR2132J rectifier s4 79A 1R2132 3 phase 75kW motor soft circuit diagram 1r2152 215 dc brake rectifier motor smk 630 UL84 230v dc motor drive circuit diagram 1 HP SINGLE PHASE induction motor speed control using pwm inverter PDF

    CD40258

    Abstract: CD4001B CD4002B CD4025B 8y transistor cd4001B HARRIS
    Contextual Info: • 44E D HA RR IS S E M I C O N D SE CT OR 4 3 D 2 27 1 0 0 3 7 3 5 2 3 Bi HAS C D 4001B , C D 4002B , C D 4025B Types H A R R IS CMOS NOR Gates F e a tu re s : • Propagation delay time s 60 ns typ. at C l * 50 pF, V q d = 10 V * Buffered inputs and outputs


    OCR Scan
    CD4001B, CD4002B, CD4025B 20-Volt CD4001B CD4002B CD4025B CD40258 8y transistor cd4001B HARRIS PDF

    silect

    Abstract: 2S503 N4060 bc182l 2N2483 2N3707 2N3709 2N929 2N930 2S501
    Contextual Info: Silicon Transistors T ype C ase No. C o ^ <u M axim um R a tin g s at25°C amb. S P E C IA L C h a ra c te ris tic s FEATURES p <0 c a> o « O w fT h FE V CE SAT ' V CB V CE V EB V V V A M in. P.o, w Max. mA mA M in. 'c *B Max. M c/s mA mA V N PN Low Level


    OCR Scan
    2N929 2N930 2N2483 N2484 2S501 2S502 2S503 2N3707 2N3012 TIS50 silect N4060 bc182l 2N3709 PDF

    tf5r21zz

    Contextual Info: Audio I DO-T Transistor Transformers L o c a t in g L in e Type No. M IL P a rt N o . 1 D 0 -T 4 4 M 2 7 /1 7 2 01 ? D O -T 2 9 M 2 7 /1 7 2 - 0 2 3 D 0 -T 1 2 4 D 0 -T 1 3 P r l. Im p . O 8 0 CT UNIT LOCATION KEY Located Type No. on Line D O -T 1 D O -T 2


    OCR Scan
    PDF

    NJM2368

    Abstract: NJM2368D NJM2368E NJM2368M NJM2368V
    Contextual Info: NJM2368 SWITCHING REGULATOR CONTROL IC FOR FLYBACK •GENERAL DESCRIPTION ■PACKAGE OUTLINE The NJM2368 is a high speed switching regulator control IC which can operate at low voltage. It uses a totempole output circuit , so that it can drive an external Bipolar Transistor directly.


    Original
    NJM2368 NJM2368 NJM2368D NJM2368E NJM2368M NJM2368V NJM2368D NJM2368E NJM2368M NJM2368V PDF

    Contextual Info: IRGP30B120KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT C Features • • • • • • • • VCES = 1200V Low VCE on Non Punch Through (NPT) Technology Low Diode VF (1.76V Typical @ 25A & 25°C)


    Original
    IRGP30B120KD-EP O-247AD PDF

    SSOP10

    Abstract: DMP14 NJM2381 NJM2381D NJM2381M NJM2381V
    Contextual Info: NJM2381 SWITCHING REGULATOR CONTROL IC FOR FLYBACK WITH CURRENT SENSE AMPLIFIER •GENERAL DESCRIPTION ■PACKAGE OUTLINE The NJM2381 is a low voltage operation DC/DC converter control IC. It features totem pole output directly driving external bipolar transistor and operates at high switching frequency


    Original
    NJM2381 NJM2381 DIP14, DMP14, SSOP10 NJM2381D NJM2381M NJM2381V 1000pF) SSOP10 DMP14 NJM2381D NJM2381M NJM2381V PDF

    IRGP30B60

    Abstract: C-150 IRGP30B60KD-E
    Contextual Info: PD - 94388A IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.


    Original
    4388A IRGP30B60KD-E O-247AD O-247AD IRGP30B60 C-150 IRGP30B60KD-E PDF

    Contextual Info: NJM2377 SWITCHING REGULATOR CONTROL IC GENERAL DESCRIPTION PACKAGE OUTLINE The NJM2377 is a high speed low voltage operation switching regulator control IC. It features a totem pole driver circuit that can directly drive an external Bipolar transistor. The NJM2377 is suitable for potable applications, including


    Original
    NJM2377 NJM2377 NJM2377D NJM2377V NJM2377M NJM2377R PDF

    Contextual Info: NJM2377 SWITCHING REGULATOR CONTROL IC •GENERAL DESCRIPTION ■PACKAGE OUTLINE The NJM2377 is a high speed low voltage operation switching regulator control IC. It features a totem pole driver circuit that can directly drive an external Bipolar transistor.


    Original
    NJM2377 NJM2377 NJM2377D NJM2377V NJM2377M NJM2377R PDF

    njm2377

    Abstract: NJM2377V current amplifire circuit diagram NJM2377D NJM2377M NJM2377R
    Contextual Info: NJM2377 SWITCHING REGULATOR CONTROL IC •GENERAL DESCRIPTION ■PACKAGE OUTLINE The NJM2377 is a high speed low voltage operation switching regulator control IC. It features a totem pole driver circuit that can directly drive an external Bipolar transistor.


    Original
    NJM2377 NJM2377 NJM2377D NJM2377V NJM2377M NJM2377R NJM2377V current amplifire circuit diagram NJM2377D NJM2377M NJM2377R PDF

    diode 30a 400v

    Abstract: 12V 30A diode 1085 CT 600v 30a IGBT C-150 IRGP30B60KD-E
    Contextual Info: PD - 94388B IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.


    Original
    94388B IRGP30B60KD-E O-247AD O-247AD diode 30a 400v 12V 30A diode 1085 CT 600v 30a IGBT C-150 IRGP30B60KD-E PDF

    Contextual Info: PD - 94388 IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.


    Original
    IRGP30B60KD-E O-247AD O-247AD PDF

    800v irf

    Abstract: IGBT 900V 80A ir igbt 1200V 40A IRF 725 IRGP8B120KD-E 40A vp
    Contextual Info: PD - 94386A IRGP8B120KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original
    4386A IRGP8B120KD-E O-247AD O-247AD O-247 800v irf IGBT 900V 80A ir igbt 1200V 40A IRF 725 IRGP8B120KD-E 40A vp PDF

    ML200D

    Abstract: 64DPCH SOF-26 TAJA105K020R MCH185A100JK l1303 spa152 MCH185A101JK
    Contextual Info: Preliminary SPA-1526Z Product Description Sirenza Microdevices’ SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT amplifier housed in a surfacemountable plastic encapsulated package. This HBT amplifier is made with


    Original
    SPA-1526Z SPA-1526Z co105847 SPA-1526Z-EVB1 910MHz SPA-1526Z-EVB2 1960MHz SPA-1526Z-EVB3 ML200D 64DPCH SOF-26 TAJA105K020R MCH185A100JK l1303 spa152 MCH185A101JK PDF

    ZXCT1032

    Abstract: Electronic fuse capacitor trip device TS16949 ZXCT1032N8TA
    Contextual Info: ZXCT1032 High-side inrush controller and electronic fuse Description The ZXCT1032 is a high-side current monitor that drives a PMOS or PNP transistor to provide in-rush current limit and over-current protection. The ZXCT1032 includes a high accuracy high-side current monitor, a start-up


    Original
    ZXCT1032 ZXCT1032 D-81541 Electronic fuse capacitor trip device TS16949 ZXCT1032N8TA PDF

    SPB2026Z

    Abstract: SPB-2026Z TL 188 TRANSISTOR PIN DIAGRAM SPB-2026
    Contextual Info: Advanced Information SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is


    Original
    SPB-2026Z 10mil EDS-105436 SPB-2026Z SPB2026Z TL 188 TRANSISTOR PIN DIAGRAM SPB-2026 PDF

    bc 303 transistor

    Abstract: LL1608-FS3N9 TAJA105K020R MCH185A8R2JK GTEK MCH185CN104KK ML200D SOF-26 avg9 SPA1426Z
    Contextual Info: Preliminary SPA-1426Z Product Description Sirenza Microdevices’ SPA-1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT amplifier housed in a surfacemountable plastic encapsulated package. This HBT amplifier is made with


    Original
    SPA-1426Z SPA-1426Z co105883 SPA-1426Z-EVB1 910MHz SPA-1426Z-EVB2 1960MHz SPA-1426Z-EVB3 bc 303 transistor LL1608-FS3N9 TAJA105K020R MCH185A8R2JK GTEK MCH185CN104KK ML200D SOF-26 avg9 SPA1426Z PDF