CT 60 TRANSISTOR Search Results

marking BS SOT23

Abstract: 2N7000 circuits
Contextual Info: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 ) s ( ct 2 1 • Low Qg ■ Low threshold drive SOT23-3L Application

BD901

Abstract: case BD901 BD899 BD645
Contextual Info: File Number 1240 BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 HARR IS SENICON] S E CT OR SbE D 8-Ampere N-P-N Darlington Power Transistors • 43 02 271 GDMDtifiS 230 IHAS 45-60-80-100-Volts, 70 Watts TERMINAL DESIGNATIONS Gain of 750 at 4 A BD895A, BD897A, BD899A)

SMP50N06-25

Abstract: SMP50N06
Contextual Info: CT*S i licoriix SMP50N06-25 in c o rp o ra te d N-Channel Enhancement Mode Transistor 25 milli ohm rDS 0N TO-22 OAB TOP VIEW PRODUCT SUMMARY O V(BR)DSS rDS(ON) (il) Id (A) 60 0.025 46 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE 12 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

IRF162

Abstract: IRF152 IRF161 IRF163 IRF150 1RF16 circuits of IRF150 MOSFET IRF150 IRF151 IRF153
Contextual Info: Standard Power MOSFETs File Number 1»24 IRF150, IRF151, IRF152, IRF153 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 33 A and 40 A, 60 V - 100 V rDs on = 0.055 Ct and 0.08 Ci N -C H A N N E L E N H A N C E M E N T M O D E

CD40258

Abstract: CD4001B CD4002B CD4025B 8y transistor cd4001B HARRIS
Contextual Info: • 44E D HA RR IS S E M I C O N D SE CT OR 4 3 D 2 27 1 0 0 3 7 3 5 2 3 Bi HAS C D 4001B , C D 4002B , C D 4025B Types H A R R IS CMOS NOR Gates F e a tu re s : • Propagation delay time s 60 ns typ. at C l * 50 pF, V q d = 10 V * Buffered inputs and outputs

NJM2368

Abstract: NJM2368D NJM2368E NJM2368M NJM2368V
Contextual Info: NJM2368 SWITCHING REGULATOR CONTROL IC FOR FLYBACK •GENERAL DESCRIPTION ■PACKAGE OUTLINE The NJM2368 is a high speed switching regulator control IC which can operate at low voltage. It uses a totempole output circuit , so that it can drive an external Bipolar Transistor directly.

Contextual Info: IRGP30B120KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT C Features • • • • • • • • VCES = 1200V Low VCE on Non Punch Through (NPT) Technology Low Diode VF (1.76V Typical @ 25A & 25°C)

SSOP10

Abstract: DMP14 NJM2381 NJM2381D NJM2381M NJM2381V
Contextual Info: NJM2381 SWITCHING REGULATOR CONTROL IC FOR FLYBACK WITH CURRENT SENSE AMPLIFIER •GENERAL DESCRIPTION ■PACKAGE OUTLINE The NJM2381 is a low voltage operation DC/DC converter control IC. It features totem pole output directly driving external bipolar transistor and operates at high switching frequency

njm2377

Abstract: NJM2377M NJM2377D NJM2377R NJM2377V current amplifire circuit diagram operation amplifire circuit applications
Contextual Info: NJM2377 SWITCHING REGULATOR CONTROL IC •GENERAL DESCRIPTION ■PACKAGE OUTLINE The NJM2377 is a high speed low voltage operation switching regulator control IC. It features a totem pole driver circuit that can directly drive an external Bipolar transistor.

Contextual Info: NJM2377 SWITCHING REGULATOR CONTROL IC •GENERAL DESCRIPTION ■PACKAGE OUTLINE The NJM2377 is a high speed low voltage operation switching regulator control IC. It features a totem pole driver circuit that can directly drive an external Bipolar transistor.

diode 30a 400v

Abstract: 12V 30A diode 1085 CT 600v 30a IGBT C-150 IRGP30B60KD-E
Contextual Info: PD - 94388B IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 94388 IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

800v irf

Abstract: IGBT 900V 80A ir igbt 1200V 40A IRF 725 IRGP8B120KD-E 40A vp
Contextual Info: PD - 94386A IRGP8B120KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

ML200D

Abstract: 64DPCH SOF-26 TAJA105K020R MCH185A100JK l1303 spa152 MCH185A101JK
Contextual Info: Preliminary SPA-1526Z Product Description Sirenza Microdevices’ SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT amplifier housed in a surfacemountable plastic encapsulated package. This HBT amplifier is made with

RG105

Abstract: ir igbt 1200V 10A SS850 sa wf IRGP20B120UD-E
Contextual Info: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability

Contextual Info: ZXCT1032 High-side inrush controller and electronic fuse Description The ZXCT1032 is a high-side current monitor that drives a PMOS or PNP transistor to provide in-rush current limit and over-current protection. The ZXCT1032 includes a high accuracy high-side current monitor, a start-up

Contextual Info: Preliminary SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is

Contextual Info: Preliminary SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is

Contextual Info: Central CM PT2907A Sem iconductor Corp. PNP SILICON TRAN SISTO R DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and

Contextual Info: AUIRGP4063D AUIRGP4063D-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA

MB3782

Abstract: MB3782P MB3782PF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27205-4E ASSP Power Supplies BIPOLAR Switching Regulator Controller MB3782 • DESCRIPTION The FUJITSU MB3782 is a PWM-type switching regulator controller, designed with open-collector output for connection to external drive transistors and coils, providing a selection of three types of output voltage: stepup, step-down or inverting inverting output is available on one circuit only .

NJM2368

Abstract: triangle waveform NJM2378 NJM2378D NJM2378E NJM2378M NJM2378V TRANSISTOR 6Cs
Contextual Info: NJM2378 PWM SWITCHING REGULATOR CONTROL IC FOR SLAVE TYPE • GENERAL DESCRIPTION The NJM2378 is a high speed switching regulator control IC, and directly drive an external Bipolar Transistor to use internal totempole output circuit. The NJM2378 operate slave mode which synchronous

Contextual Info: BD241A-A NPN power transistor Features . • This device is qualified for automotive application ■ NPN transistor Applications ■ s ct u d o Audio, general purpose switching and amplifier transistors r P e 1 2 3 TO-220 Description The devices are manufactured in Planar

transistor 2N4033

Abstract: 2n4033 datasheet 2N4033
Contextual Info: 2N4033 SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The 2N4033 is a silicon Planar Epitaxial PNP transistor in Jedec TO-39 metal case primary intended for large signal, low noise industrial applications. c u d TO-39 e t le s t o r P INTERNAL SCHEMATIC DIAGRAM