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    CS 2131 Search Results

    CS 2131 Result Highlights (5)

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    10137785-052131LF
    Amphenol Communications Solutions Minitek® Pwr 4.2 HCC, Single Row, Vertical Through Hole Header, LCP, Gold Flash plating, Natural Color, 5 Positions, GW Compatible, with Post, Tray packing. PDF
    20021311-00086T1LF
    Amphenol Communications Solutions 1.27mm (0.05in.) pitch, Receptacle Top entry, 86 contacts PDF
    20021311-00032T1LF
    Amphenol Communications Solutions 1.27mm (0.05in.) pitch, Receptacle Top entry, 32 contacts PDF
    20021311-00058T8LF
    Amphenol Communications Solutions 1.27mm (0.05in.) pitch, Receptacle Top entry, 58 contacts PDF
    20021311-00038T4LF
    Amphenol Communications Solutions 1.27mm (0.05in.) pitch, Receptacle Top entry, 38 contacts PDF
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    CS 2131 Price and Stock

    TE Connectivity

    TE Connectivity 202K132-3/42-0CS2131

    202K132-3/42-0CS2131 MOQ Reduction
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    TE Connectivity BND40AB90-1407V-CS-2131

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    TE Connectivity 202K132-100/86-0CS2131

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    TE Connectivity 202K121-100/180-0CS2131

    Te Connectivity / Raychem 202K121-100/180-0CS2131
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    CS 2131 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    8237AE-5

    Abstract: UM8237AE 8237ae UM8237AE-5 UM8237AE-4-5 8085 block transfer program UM8237 8085AH-2 8237AH UM8237A
    Contextual Info: UNICORN MIC RO ELE CT RO NI CS 24E D •Î27fl7flë GGQ0177 3 S 33^ r - Z Z l - 3 3 - 1? UM8237AE-4-5 Programmable DMA Controller DMAC Features Second w ith 5 MHz UM8237AE-5 • Enable/Disable Control o f Individual DMA Requests ■ Directly Expandable to any Number of Channels


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    Contextual Info: R F W i MICRO DEVICES DUAL-MODE CDMA/AM PS OR TOMA/AMPS 3 V POWER A M PLIFIER Typical Applications • Spread Spectrum Systems • 3 V JCDM A /TA CS Cellular Handsets • C D P D Portable Data Cards • 3 V T D M A /A M P S Cellular Handsets • Portable Battery-Powered Equipment


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    rf215228v5o1960khecffset27dbm PDF

    TEKELEC 297

    Abstract: intel 4269 mcs48 assembly language SEVEN SEGMENT FUNCTION TABLE OF IC 7447 bcd to hex using ic 7447 Intel 8245 intel 8048 8245 mcs-48 intel 4269 rep 197b TA 365 TEKELEC
    Contextual Info: intJ AP-40 APPLICATION NOTE June 197B <s> r? tV8P> A sy rV A''" O ? N ^ rf<> > v « ® Intel Corporation, 1978 w ^ •c T v > V 9800755 R elated In te l P u b lic atio n s ” M CS-48 M ic ro c o m p u te r F a m ily U sers' M a n u a l” "M C S-48 A s s e m b ly Language P ro g ra m m in g M a n u a l”


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    F48D

    Abstract: SI07
    Contextual Info: »RODUCT r m3 fin 76764— X69 g 2 3 u5 Tnm onnt « tfw oroowty at «nd » "TnO — onxnMary O M g n * o< N 5ERG ELfCTW ONCS D M 9 I0 N al OLI PONT OC NEM O URS N E C tR U W O B V No pari oI V « d M q n tfiovn on IN * orrt mmr be uaatf m any ««y «Mihout m« «mttwi conmmrt oi BERG ELECTRO M CS O M SiO N »-Henogenboech.


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    si-07-/f48dsi07 PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    rca sk cross-referencecd40032n2505tf408+61n4465250pa1202n3017pt 3570 trw rfpa189semicon volume 1 PDF

    Contextual Info: Memory ICs 1,024-Bit Serial Electrically Erasable PROM BR93LL46F/BR93LL46FV •Features • Low power CMOS technology • 64 x 16 bit configuration • 1.8V to 4.0V operation • Low power consumption - 0.5mA typ. active current - 0.4 f i k (typ.) stanby current


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    024-bitbr93ll46f/br93ll46fvd021317 PDF

    MCM514258AZ80

    Abstract: MCM 2128 RAM MCM514258AZ70 MCM 2128 M514258A MCM5142S8A-70
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M CM 514258A 2 5 6 K x 4 C M O S Dynam ic R A M S tatic Column The MCM514258A is a 1.0/t CMOS high-speed, dynam ic random access m em ory. It is organized as 262,144 fo u r-b it w ords and fabricated w ith CMOS silicon-gate process tech­


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    14258amcm514258a300-mil100-mil+9numbers-mcm514258ap70mcm514257ap80mcm514258ap10mcm514258az80mcm 2128 rammcm514258az70mcm 2128m514258amcm5142s8a-70 PDF

    XLS93C46-3

    Abstract: XL93C46 XLE93C46-3 SK 702 XL93C46-3 93c46 wp Exel
    Contextual Info: ROHM CORP/ EXEL NELECS k/fcrf bbE D • 7fiE‘i G m MICROELECTRONICS GÜDlb7S ST7 XL93C46-3 Exot/tonetIn$ 1,024-Bit Serial 3V to 5V Electrically Erasable PROM with 2V Read Capability F E A TU R ES PIN C O N F IG U R A TIO N S ■ S tate-o f-th e-A rt A rch itecture


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    00dlb75xl93c46-3024-bitxls93c46-3+5xl93c46xle93c46-3sk 70293c46 wpexel PDF

    Contextual Info: im X25021 2K 256 x 8 Bit SPI Serial E2PROM with Block Lock Protection FEATURES DESCRIPTION • 1MHz Clock Rate • SPI Modes 0,1 & 1,0 • 256 X 8 Bits — 4 Byte Page Mode • Low Power CMOS — 10|iA Standby Current — 3mA Active Current • 2.7V To 5.5V Power Supply


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    x25021 PDF

    Contextual Info: X25021 2K 256 x 8 Bit SPI Serial E2PROM With BLOCK LOCK PROTECTION FEATURES DESCRIPTION • 1 MHz Clock Rate • SRI Modes 0,1 & 1,0 • 256 X 8 Bits — 4 Byte Page Mode • Low Power CMOS — 150)iA Standby Current — 3mA Active Current • 2.7V To 5.5V Power Supply


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    x25021d0d44dd PDF

    Contextual Info: NT2GT72U4NA0BV 2GB: 256M x 72 Preliminary Low Profile Registered DDR2 SDRAM DIMM 240pin Low Profile Registered DDR2 SDRAM MODULE Based on 128Mx4 DDR2 SDRAM Features • On Die Termination • 256Mx72 Low Profile Registered DDR2 DIMM based on • Data is read or written on both clock edges


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    nt2gt72u4na0bv240pin128mx4256mx72+2240-pinpc2-3200 PDF

    Contextual Info: NT2GT72U4NA0BV 2GB: 256M x 72 Low Profile Registered DDR2 SDRAM DIMM 240pin Low Profile Registered DDR2 SDRAM MODULE Based on 128Mx4 DDR2 SDRAM Features • On Die Termination • 256Mx72 Low Profile Registered DDR2 DIMM based on • Data is read or written on both clock edges


    Original
    nt2gt72u4na0bv240pin128mx4256mx72+3240-pinpc2-3200sstl-18 PDF

    Contextual Info: im X25021 2K 256 x 8 Bit SPI Serial E2PROM With BLOCK LOCK PROTECTION FEATURES DESCRIPTION • 1MHz Clock Rate • SPI Modes 0,1 & 1,0 • 256 X 8 Bits — 4 Byte Page Mode • Low Power CMOS — 150|iA Standby Current — 3mA Active Current • 2.7V To 5.5V Power Supply


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    x250212048-bit PDF

    Contextual Info: SIEMENS Nonvolatile Memory 4-Kbit E2PROM with I 2C Bus Interface SDA 2546 MOS 1C Features • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 512 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)


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    q67100-h509625x46-5q67100-h3259e1414+1023sbg5 PDF

    Contextual Info: SIEMENS Nonvolatile Memory 8-Kbit E2PROM with I2C Bus and Write Protection SDA 3586-5 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 1024 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (l2C Bus)


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    q67100-h5102e1414023sbg5 PDF

    siemens master drive circuit diagram

    Abstract: AKER Ah NL-2500 TD13 park 16068 siemens 7st
    Contextual Info: SIEMENS Nonvolatile Memory 4-Kbit E2PROM with I2C Bus and Write Protection SDA 3546-5 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 512 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (l2C Bus)


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    q67100-h5098s-164fl23sbg5siemens master drive circuit diagram+5aker ahnl-2500td13park 16068siemens 7st PDF

    Contextual Info: STI7216018UD2-10V G—Preliminary 168-PIN OIMMS 16M X 72 Bits SDRAM Unbuffered DIMM Optimized for ECC FEATURES GENERAL DESCRIPTION The Simple Technology STI7216018UD2-10VG is a 16M x 72 bits Synchronous Dynamic RAM SDRAM Dual n-line Memory Module (DIMM). The Simple Technology STI7216018UD210VG consists of eighteen CMOS 4M x 8 bits x 2 banks


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    sti7216018ud2-10v168-pin100mhzcycles/64ms+5sti7216018ud2-10vgsti7216018ud210vg54-pin400-mil83mhz PDF

    DQ380

    Abstract: U4 Package ADQ36
    Contextual Info: STI644006UD2-1OVG 168-PIN DIMMS 4M X 64 Bits SDRAM Unbuffered DIM M FEATURES GENERAL DESCRIPTION • Maximum frequency=100MHz tcc=10ns • Burst Mode Operation • Auto and self refresh capability (4096 cycles/64ms refresh) • • LVTTL compatible inputs and outputs


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    sti644006ud2-1ovg100mhzcycles/64ms168-pin+7sti644006ud2-10vgsti644006ud2-150-pin400-mildq380u4 packageadq36 PDF

    Contextual Info: SIEMENS Nonvolatile Memory 2-Kbit E2PROM with l 2C Bus and 2 K Write Protection SDA 3526 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 256 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)


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    q67100-h3254q67100-h34e1414023sbg5 PDF

    MPC821

    Abstract: PA10 PA11 PA13 PA15 PB30 PB31 b30r
    Contextual Info: SECTION 21 ELECTRICAL CHARACTERISTICS This section contains detailed information on power considerations, DC/AC electrical characteristics, and AC timing specifications for the MPC821. NOTE The MPC821 electrical specifications are preliminary and many specs are from design simulations. These specifications may


    Original
    mpc821pa10pa11pa13+4pa15pb30pb31b30r PDF

    SEIKO Year of assembly

    Abstract: S22H12I01
    Contextual Info: S-22H12R/I 256-word x4-bit parallel NON-VOLATILE RAM The S-22H12R/I is a non-volatile CMOS RAM, composed of a CMOS static RAM and a non-volatile electrically erasable programmable memory E2PROM to backup the SRAM. The organization is 256-word x 4-bit (total 1024 bits) and


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    s-22h12r/i256-wordx2212pi133+3a123443seiko year of assemblys22h12i01 PDF

    e1414

    Abstract: siemens master drive circuit diagram Siemens pulse sequence
    Contextual Info: SIEMENS Nonvolatile Memory 2-Kbit E2PROM with I 2C Bus Interface SDA 2526 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 256 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (l2C Bus)


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    25x26-525x26q67100-h5095q67100-h3253+6q67100-h3257q67100-h3258e1414023sbg5siemens master drive circuit diagramsiemens pulse sequence PDF

    ADVM

    Abstract: cy7c379 CY7C178 CY7C179 RD7I141
    Contextual Info: PRELIMINARY CYPRESS Features • Supports 66-MHzPentium micro­ processor cache systems with zero wait states • 32K by 18 common I/O • Fast clock-to-output times — 8.5 ns • Itoo-bit wraparound counter support­ ing Pentium and 486 burst sequence


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    cy7c178cy7c17966-mhz52-pin+412ymbadvmcy7c379rd7i141 PDF

    e1414

    Abstract: siemens master drive circuit diagram L1152B siemens sda
    Contextual Info: SIEMENS Nonvolatile Memory 1-Kbit E2PROM with PC Bus Interface SDA 2516 MOSIC Features • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 128 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)


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    25x16-525x16q67100-h5092q67100-h3252+7q67100-h3255q67100-h3256e1414023sbg5siemens master drive circuit diagraml1152bsiemens sda PDF