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    CS 2131 Search Results

    CS 2131 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    20021311-00096T4LF
    Amphenol Communications Solutions 1.27mm (0.05in.) pitch, Receptacle Top entry, 96 contacts PDF
    20021311-00094T8LF
    Amphenol Communications Solutions 1.27mm (0.05in.) pitch, Receptacle Top entry, 94 contacts PDF
    20021311-00026T4LF
    Amphenol Communications Solutions 1.27mm (0.05in.) pitch, Receptacle Top entry, 26 contacts PDF
    20021311-000A0T4LF
    Amphenol Communications Solutions 1.27mm (0.05in.) pitch, Receptacle Top entry, 100 contacts PDF
    20021311-00046T8LF
    Amphenol Communications Solutions 1.27mm (0.05in.) pitch, Receptacle Top entry, 46 contacts PDF
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    CS 2131 Price and Stock

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    Hirose Electric Co Ltd HCS2-131-F(40)

    IC RF SWITCH COAX
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    DigiKey HCS2-131-F(40) Bulk 1
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    Newark HCS2-131-F(40) Bulk 1
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    TE Connectivity 202K174-25-0CS2131

    202K174-25-0CS2131
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    Interstate Connecting Components 202K174-25-0CS2131
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    Master Electronics 202K174-25-0CS2131
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    TE Connectivity 202K132-3-42-0CS2131

    202K132-3/42-0CS2131
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    TE Connectivity 202K132-100-86-0CS2131

    202K132-100/86-0CS2131
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    TE Connectivity BND40AB90-1407V-CS-2131

    BND40AB90-1407V-CS-2131
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    Onlinecomponents.com BND40AB90-1407V-CS-2131
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    Master Electronics BND40AB90-1407V-CS-2131
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    CS 2131 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    8237AE-5

    Abstract: UM8237AE 8237ae UM8237AE-5 UM8237AE-4-5 8085 block transfer program UM8237 8085AH-2 8237AH UM8237A
    Contextual Info: UNICORN MIC RO ELE CT RO NI CS 24E D •Î27fl7flë GGQ0177 3 S 33^ r - Z Z l - 3 3 - 1? UM8237AE-4-5 Programmable DMA Controller DMAC Features Second w ith 5 MHz UM8237AE-5 • Enable/Disable Control o f Individual DMA Requests ■ Directly Expandable to any Number of Channels


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    QQ0Q17T r-ZZl-33-1? UM8237AE-4-5 UM8237AE-5 UM8237AE/-4/-5 UM8237AE-4/-5 UM8237AE UM8237AÃ UM8237AE-5 8237AE-5 8237ae UM8237AE-4-5 8085 block transfer program UM8237 8085AH-2 8237AH UM8237A PDF

    Contextual Info: R F W i MICRO DEVICES DUAL-MODE CDMA/AM PS OR TOMA/AMPS 3 V POWER A M PLIFIER Typical Applications • Spread Spectrum Systems • 3 V JCDM A /TA CS Cellular Handsets • C D P D Portable Data Cards • 3 V T D M A /A M P S Cellular Handsets • Portable Battery-Powered Equipment


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    RF2152 28V5O 1960kHecffset) 27dBm PDF

    TEKELEC 297

    Abstract: intel 4269 mcs48 assembly language SEVEN SEGMENT FUNCTION TABLE OF IC 7447 bcd to hex using ic 7447 Intel 8245 intel 8048 8245 mcs-48 intel 4269 rep 197b TA 365 TEKELEC
    Contextual Info: intJ AP-40 APPLICATION NOTE June 197B <s> r? tV8P> A sy rV A''" O ? N ^ rf<> > v « ® Intel Corporation, 1978 w ^ •c T v > V 9800755 R elated In te l P u b lic atio n s ” M CS-48 M ic ro c o m p u te r F a m ily U sers' M a n u a l” "M C S-48 A s s e m b ly Language P ro g ra m m in g M a n u a l”


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    AP-40 CS-48 B-1160 D-2085 D-8000 0732t RG20LS TEKELEC 297 intel 4269 mcs48 assembly language SEVEN SEGMENT FUNCTION TABLE OF IC 7447 bcd to hex using ic 7447 Intel 8245 intel 8048 8245 mcs-48 intel 4269 rep 197b TA 365 TEKELEC PDF

    F48D

    Abstract: SI07
    Contextual Info: »RODUCT r m3 fin 76764— X69 g 2 3 u5 Tnm onnt « tfw oroowty at «nd » "TnO — onxnMary O M g n * o< N 5ERG ELfCTW ONCS D M 9 I0 N al OLI PONT OC NEM O URS N E C tR U W O B V No pari oI V « d M q n tfiovn on IN * orrt mmr be uaatf m any ««y «Mihout m« «mttwi conmmrt oi BERG ELECTRO M CS O M SiO N »-Henogenboech.


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    Si-07-/ F48D SI07 PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    PDF

    Contextual Info: Memory ICs 1,024-Bit Serial Electrically Erasable PROM BR93LL46F/BR93LL46FV •Features • Low power CMOS technology • 64 x 16 bit configuration • 1.8V to 4.0V operation • Low power consumption - 0.5mA typ. active current - 0.4 f i k (typ.) stanby current


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    024-Bit BR93LL46F/BR93LL46FV D021317 PDF

    MCM514258AZ80

    Abstract: MCM 2128 RAM MCM514258AZ70 MCM 2128 M514258A MCM5142S8A-70
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M CM 514258A 2 5 6 K x 4 C M O S Dynam ic R A M S tatic Column The MCM514258A is a 1.0/t CMOS high-speed, dynam ic random access m em ory. It is organized as 262,144 fo u r-b it w ords and fabricated w ith CMOS silicon-gate process tech­


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    14258A MCM514258A 300-mil 100-mil 14258A Numbers-MCM514258AP70 MCM514257AP80 MCM514258AP10 MCM514258AZ80 MCM 2128 RAM MCM514258AZ70 MCM 2128 M514258A MCM5142S8A-70 PDF

    XLS93C46-3

    Abstract: XL93C46 XLE93C46-3 SK 702 XL93C46-3 93c46 wp Exel
    Contextual Info: ROHM CORP/ EXEL NELECS k/fcrf bbE D • 7fiE‘i G m MICROELECTRONICS GÜDlb7S ST7 XL93C46-3 Exot/tonetIn$ 1,024-Bit Serial 3V to 5V Electrically Erasable PROM with 2V Read Capability F E A TU R ES PIN C O N F IG U R A TIO N S ■ S tate-o f-th e-A rt A rch itecture


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    00Dlb75 XL93C46-3 024-Bit XLS93C46-3 XL93C46 XLE93C46-3 SK 702 XL93C46-3 93c46 wp Exel PDF

    Contextual Info: im X25021 2K 256 x 8 Bit SPI Serial E2PROM with Block Lock Protection FEATURES DESCRIPTION • 1MHz Clock Rate • SPI Modes 0,1 & 1,0 • 256 X 8 Bits — 4 Byte Page Mode • Low Power CMOS — 10|iA Standby Current — 3mA Active Current • 2.7V To 5.5V Power Supply


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    X25021 PDF

    Contextual Info: X25021 2K 256 x 8 Bit SPI Serial E2PROM With BLOCK LOCK PROTECTION FEATURES DESCRIPTION • 1 MHz Clock Rate • SRI Modes 0,1 & 1,0 • 256 X 8 Bits — 4 Byte Page Mode • Low Power CMOS — 150)iA Standby Current — 3mA Active Current • 2.7V To 5.5V Power Supply


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    X25021 D0D44DD PDF

    Contextual Info: NT2GT72U4NA0BV 2GB: 256M x 72 Preliminary Low Profile Registered DDR2 SDRAM DIMM 240pin Low Profile Registered DDR2 SDRAM MODULE Based on 128Mx4 DDR2 SDRAM Features • On Die Termination • 256Mx72 Low Profile Registered DDR2 DIMM based on • Data is read or written on both clock edges


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    NT2GT72U4NA0BV 240pin 128Mx4 256Mx72 240-pin PC2-3200 PDF

    Contextual Info: NT2GT72U4NA0BV 2GB: 256M x 72 Low Profile Registered DDR2 SDRAM DIMM 240pin Low Profile Registered DDR2 SDRAM MODULE Based on 128Mx4 DDR2 SDRAM Features • On Die Termination • 256Mx72 Low Profile Registered DDR2 DIMM based on • Data is read or written on both clock edges


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    NT2GT72U4NA0BV 240pin 128Mx4 256Mx72 240-pin PC2-3200 SSTL-18 PDF

    Contextual Info: im X25021 2K 256 x 8 Bit SPI Serial E2PROM With BLOCK LOCK PROTECTION FEATURES DESCRIPTION • 1MHz Clock Rate • SPI Modes 0,1 & 1,0 • 256 X 8 Bits — 4 Byte Page Mode • Low Power CMOS — 150|iA Standby Current — 3mA Active Current • 2.7V To 5.5V Power Supply


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    X25021 X25021 2048-bit PDF

    Contextual Info: SIEMENS Nonvolatile Memory 4-Kbit E2PROM with I 2C Bus Interface SDA 2546 MOS 1C Features • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 512 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)


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    Q67100-H5096 25X46-5 Q67100-H3259 E1414 023SbG5 PDF

    Contextual Info: SIEMENS Nonvolatile Memory 8-Kbit E2PROM with I2C Bus and Write Protection SDA 3586-5 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 1024 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (l2C Bus)


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    Q67100-H5102 E1414 023SbG5 PDF

    siemens master drive circuit diagram

    Abstract: AKER Ah NL-2500 TD13 park 16068 siemens 7st
    Contextual Info: SIEMENS Nonvolatile Memory 4-Kbit E2PROM with I2C Bus and Write Protection SDA 3546-5 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 512 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (l2C Bus)


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    Q67100-H5098 S-164 fl23SbG5 siemens master drive circuit diagram AKER Ah NL-2500 TD13 park 16068 siemens 7st PDF

    Contextual Info: STI7216018UD2-10V G—Preliminary 168-PIN OIMMS 16M X 72 Bits SDRAM Unbuffered DIMM Optimized for ECC FEATURES GENERAL DESCRIPTION The Simple Technology STI7216018UD2-10VG is a 16M x 72 bits Synchronous Dynamic RAM SDRAM Dual n-line Memory Module (DIMM). The Simple Technology STI7216018UD210VG consists of eighteen CMOS 4M x 8 bits x 2 banks


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    STI7216018UD2-10V 168-PIN 100MHz cycles/64ms STI7216018UD2-10VG STI7216018UD210VG 54-pin 400-mil 83MHz PDF

    DQ380

    Abstract: U4 Package ADQ36
    Contextual Info: STI644006UD2-1OVG 168-PIN DIMMS 4M X 64 Bits SDRAM Unbuffered DIM M FEATURES GENERAL DESCRIPTION • Maximum frequency=100MHz tcc=10ns • Burst Mode Operation • Auto and self refresh capability (4096 cycles/64ms refresh) • • LVTTL compatible inputs and outputs


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    STI644006UD2-1OVG 100MHz cycles/64ms 168-PIN STI644006UD2-10VG STI644006UD2-1 50-pin 400-mil DQ380 U4 Package ADQ36 PDF

    Contextual Info: SIEMENS Nonvolatile Memory 2-Kbit E2PROM with l 2C Bus and 2 K Write Protection SDA 3526 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 256 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)


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    Q67100-H3254 Q67100-H34 E1414 023SbG5 PDF

    MPC821

    Abstract: PA10 PA11 PA13 PA15 PB30 PB31 b30r
    Contextual Info: SECTION 21 ELECTRICAL CHARACTERISTICS This section contains detailed information on power considerations, DC/AC electrical characteristics, and AC timing specifications for the MPC821. NOTE The MPC821 electrical specifications are preliminary and many specs are from design simulations. These specifications may


    Original
    MPC821. MPC821 PA10 PA11 PA13 PA15 PB30 PB31 b30r PDF

    SEIKO Year of assembly

    Abstract: S22H12I01
    Contextual Info: S-22H12R/I 256-word x4-bit parallel NON-VOLATILE RAM The S-22H12R/I is a non-volatile CMOS RAM, composed of a CMOS static RAM and a non-volatile electrically erasable programmable memory E2PROM to backup the SRAM. The organization is 256-word x 4-bit (total 1024 bits) and


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    S-22H12R/I 256-word S-22H12R/I X2212 Pi133 A123443 SEIKO Year of assembly S22H12I01 PDF

    e1414

    Abstract: siemens master drive circuit diagram Siemens pulse sequence
    Contextual Info: SIEMENS Nonvolatile Memory 2-Kbit E2PROM with I 2C Bus Interface SDA 2526 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 256 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (l2C Bus)


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    25X26-5 25X26 Q67100-H5095 Q67100-H3253 Q67100-H3257 Q67100-H3258 E1414 023SbG5 siemens master drive circuit diagram Siemens pulse sequence PDF

    ADVM

    Abstract: cy7c379 CY7C178 CY7C179 RD7I141
    Contextual Info: PRELIMINARY CYPRESS Features • Supports 66-MHzPentium micro­ processor cache systems with zero wait states • 32K by 18 common I/O • Fast clock-to-output times — 8.5 ns • Itoo-bit wraparound counter support­ ing Pentium and 486 burst sequence


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    CY7C178 CY7C179 66-MHz CY7C178) CY7C179) 52-pin CY7C179 CY7C178â 12YMB ADVM cy7c379 RD7I141 PDF

    e1414

    Abstract: siemens master drive circuit diagram L1152B siemens sda
    Contextual Info: SIEMENS Nonvolatile Memory 1-Kbit E2PROM with PC Bus Interface SDA 2516 MOSIC Features • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 128 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)


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    25X16-5 25X16 Q67100-H5092 Q67100-H3252 Q67100-H3255 Q67100-H3256 E1414 023SbG5 siemens master drive circuit diagram L1152B siemens sda PDF