CREE RF CMPA801B025F Search Results
CREE RF CMPA801B025F Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| BLA1011-300 |
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BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| CLF1G0035-100P |
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CLF1G0035-100 - 100W Broadband RF power GaN HEMT |
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| LXMSJZNCMH-225 | Murata Manufacturing Co Ltd | Ultra small RAIN RFID chip tag | |||
| LXMS21NCMH-230 | Murata Manufacturing Co Ltd | Ultra small RAIN RFID chip tag | |||
| LBAA0QB1SJ-295 | Murata Manufacturing Co Ltd | SX1262 MODULE WITH OPEN MCU |
CREE RF CMPA801B025F Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
CMPA801B025
Abstract: X-band Internally Matched Power GaN HEMTs
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CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 X-band Internally Matched Power GaN HEMTs | |
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Contextual Info: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher |
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CMPA801B025F CMPA801B025F CMPA80 1B025F | |
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Contextual Info: CMPA801B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher |
Original |
CMPA801B025F CMPA801B025F CMPA80 1B025F | |
CMPA801B025
Abstract: CMPA801B025F x-band mmic 3.5 DC Jack
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CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 x-band mmic 3.5 DC Jack | |
CMPA801B025F
Abstract: CMPA801B025 cree rf 1B025F package 440208 cree rf cmpa801b025f
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CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 cree rf package 440208 cree rf cmpa801b025f |