CR-110 CHARGE SENSITIVE Search Results

APT55GF60BN

Contextual Info: A D V A NC ED POWER TECHNOLOGY b lE 0 2 5 7 ^ 0 ^ o o G o a a a sb3 D I AV P A dvanced R o w er Te c h n o l o g y APT55GF60BN 600V 55A POWER MOS IV IGBT N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS

Contextual Info: ADVANCED POWER TECHNOLOGY 0257^0^ QGGQflflE 5b3 H A V P blE D A dvanced P o w er Te c h n o l o g y APT55GF60BN P O W E R M O S IV 600V 55A IG B T N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol

B49100A1104M

Abstract: rf component catalog
Contextual Info: Data Sheets 2005 UltraCap Double Layer Capacitors just everywhere . www.epcos.com Welcome to the World of Passive Electronic Components Active everywhere Passive electronic components are found in every electrical and electronic product – from automotive and industrial electronics through information and communications to consumer

APT5027BNR

Abstract: APT5027
Contextual Info: s o D 6 s A d v a n ced P o w er Te c h n o l o g y • APT5027BNR 500V 20.0A 0.27Q TOWER MOS IV^ AVALANCHE RATED N -C H A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified. Parameter

Contextual Info: ADVANCED POÜIER TECHNOLOGY □ SSTIGT G000fl7fl 03S « A V P blE D A dvanced P o w er Te c h n o l o g y * APT45GF60BN 600V 45A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol V CES

transistor GC cd

Contextual Info: A DV A NC ED POWER TECHNOLOGY b lE 0 2 S 7 ti D ,i D GDODflbb 310 HAVP ADVANCED PO W ER Te c h n o lo g y APT45GL100BN 1000V 45A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol

Contextual Info: APT5028SVR A dvanced po w er Te c h n o l o g y 500V 20A 0.280Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

Contextual Info: ADVANCED POWER TECHNOLOGY L IE D • 0 2 5 7 *1 0 ^ 0000014 2ÔS ■ AVP A d v a n ced po w er Te c h n o l o g y * APT50GF100BN 1000V 50A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS

APT45GL100BN

Abstract: 10A fast Gate Turn-off Thyristor
Contextual Info: A D V A NC ED POWER TECHNOLOGY b lE OZSTSCm D OOOOèbb 310 HAVP A D V A N C ED PO W ER Te c h n o l o g y • APT45GL100BN 1000V 45A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol

APT50GL60BN

Abstract: 25CC
Contextual Info: A D V A NC ED PO WER T E C H N O L O G Y blE D • O a S ? ^ 1! OOOOflSM bTT * A V P ■ R A d v a n c W /< A P O W E R e d rJ m I T e c h n o l o g y APT50GL60BN 600V 50A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR

Contextual Info: A D V A N C E D PO WE R T E C H N O L O G Y blE D • 0257^0=1 0 0 0 0 0 5 4 bTI H A V P ■ r W /jA A dvanced pow er Te c h n o l o g y APT50GL60BN 600V 50A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR

IR E78996

Abstract: 6J450 T45 diode 6H450 E78996 rectifier module E78996 diode FK 330
Contextual Info: INTERNATIONAL RECTIFIER bSE J> Wt 4ÛSS452 001b3E3 750 • INR Bulletin E27113 International IxqrIRectifier IRFK6H450,IRFK6J450 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996.

APT45G100BN

Abstract: i287
Contextual Info: ADVANCED POUER TECHNOLOGY blE D • GSST'lD'l GOGGfl'î'î flb? ■ AVP ADVANCED PO W ER Te c h n o l o g y APT45G100BN P O W E R M O S 1000V 45A IV IG B T N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS

Contextual Info: IMAGE SENSORS DATA SHEET FTF3020M 6M Full-Frame CCD Image Sensor Product specification DALSA Professional Imaging 2007 September 5 DALSA Professional Imaging Product Specification 6M Full-Frame CCD Image Sensor FTF3020M • 35mm film compatible image format 36 x 24 mm

BC 9015 transistor

Abstract: ccd color Linear Image Sensor ccd image sensor Melles Griot pnp transistor 9015 TRANSISTOR BC 157 BG40 CM500 FTF3020M 2048 x 1 ccd linear array
Contextual Info: IMAGE SENSORS DATA SHEET FTF3020M 6M Full-Frame CCD Image Sensor Product specification DALSA Professional Imaging May 12, 2009 DALSA Professional Imaging Product Specification 6M Full-Frame CCD Image Sensor FTF3020M • 35mm film compatible image format 36 x 24 mm

DALSA AREA CCD

Abstract: dalsa FT frame transfer
Contextual Info: IMAGE SENSORS DATA SHEET FT18 1M Frame Transfer CCD Image Sensor Product specification DALSA Professional Imaging 2006 December 19 DALSA Professional Imaging Product Specification 1M Frame Transfer CCD Image Sensor • 2/3-inch optical format • 1M active pixels 1024H x 1024V

20m60

Abstract: APT20M45
Contextual Info: A dvanced P ow er Te c h n o l o g y • APT20M45BNR 200V APT20M60BNR 200V POWER MOS IV' 58A 50A 0.04512 0.060Q AVALANCHE RATED N -C H A N N E L ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

transistor N100

Abstract: N100 transistor K 192 A transistor Transistor 5331 BUZ42 N100 T0220AB V103 transistor k 3911
Contextual Info: N AMER P H I L I PS /D I SC RE T E ObE D • tb53131 Power M OS transistor OOIMSOO BU Z42 5 r - 3 7 -\i May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

APT802R4KN

Abstract: 802r8kn APT802R8KN
Contextual Info: A d v P o w a n c e d e r Technology APT802R4KN APT802R8KN 800V 4.7A 2.40 D 800V 4.4A 2.80Q P*W ER MOS IV® N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified. Parameter APT802R4KN

BC 9015 transistor

Abstract: ccd color Linear Image Sensor CCD IMAGE ccd image sensor CG1 HOYA image Sensor 28 pin Melles Griot TRANSISTOR BC 157 BG40 CM500
Contextual Info: IMAGE SENSORS DATA SHEET FTF3020C 6M Full-Frame CCD Image Sensor Product specification DALSA Professional Imaging 2007 September 05 DALSA Professional Imaging Product Specification 6M Full-Frame CCD Image Sensor FTF3020C • 35mm film compatible image format 36 x 24 mm

Contextual Info: IMAGE SENSORS DATA SHEET FTF3020C 6M Full-Frame CCD Image Sensor Product specification DALSA Professional Imaging 2006 October 30 DALSA Professional Imaging Product Specification 6M Full-Frame CCD Image Sensor FTF3020C 2 • 35mm film compatible image format 36 x 24 mm

LDR sensor light dark sensor

Abstract: ldr sensor CDS LDR 5mm 10mm ldr bc 457 Transistor WAG-05 BAT74 ccd image sensor WAG0 Melles Griot
Contextual Info: IMAGE SENSORS FTF3020-C Full Frame CCD Image Sensor Product specification File under Image Sensors Philips Semiconductors 1999 November 22 Philips Semiconductors Product specification Full Frame CCD Image Sensor FTF3020-C • 35mm film compatible image format 36 x 24 mm2

PCI-Express 2.0 X8 connector Pinout

Abstract: list of n channel fet ISL6161 ISL6161CB TB379
Contextual Info: ISL6161 Data Sheet November 2003 FN9104.2 Dual Power Distribution Controller Features The ISL6161 is a HOT SWAP dual supply power distribution controller that can be used in PCI-Express applications. • HOT SWAP Dual Power Distribution and Control for

BC 9015 transistor

Abstract: Melles Griot dalsa FT FTT1010-M ccd image sensor CCD Linear Image Sensor CG1 HOYA Dalsa FTT1010M TRANSISTOR BC 157
Contextual Info: IMAGE SENSORS DATA SHEET FTT1010M 1M Frame Transfer CCD Image Sensor Product specification DALSA Professional Imaging 2007, April 17 DALSA Professional Imaging Product Specification 1M Frame Transfer CCD Image Sensor • 1-inch optical format • 1M active pixels 1024H x 1024V