CR-110 CHARGE SENSITIVE Search Results

schematic diagram pulse shaping

Abstract: CR-110 cremat CR-150-AC-C CR-110 charge sensitive cremat 150 CREMAT CR110 CREMAT cr-160 Landis FR cr series
Contextual Info: CR-200 Gaussian shaping amplifier Rev. 2 : application guide General Description Equivalent circuit diagram The CR-200 is a single channel shaping amplifier, intended to be used to read out the signals from charge sensitive preamplifiers (e.g. Cremat CR-110 or equivalent). Gaussian shaping amplifiers (also known as

APT55GF60BN

Contextual Info: A D V A NC ED POWER TECHNOLOGY b lE 0 2 5 7 ^ 0 ^ o o G o a a a sb3 D I AV P A dvanced R o w er Te c h n o l o g y APT55GF60BN 600V 55A POWER MOS IV IGBT N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS

Contextual Info: ADVANCED POWER TECHNOLOGY 0257^0^ QGGQflflE 5b3 H A V P blE D A dvanced P o w er Te c h n o l o g y APT55GF60BN P O W E R M O S IV 600V 55A IG B T N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol

schematic diagram UPS active power 600

Abstract: solar inverters schematic diagram carbon resistor siemens crane regenerative power B48621A5225Q012 schematic diagram UPS 600 Power free SIEMENS epcos CAPACITORS pirelli cable industrial B48621A4205Q006 B48621A4305Q006
Contextual Info: UltraCap Contents Over view of types 3 5 Introduction 7 UltraCap technology Cell voltage balancing 10 15 Measurement methods and electrical characteristics 16 Quality and environment Cautions 17 21 UltraCap single cells 22 UltraCap modules 27 Symbols and terms

B49100A1104M

Abstract: rf component catalog
Contextual Info: Data Sheets 2005 UltraCap Double Layer Capacitors just everywhere . www.epcos.com Welcome to the World of Passive Electronic Components Active everywhere Passive electronic components are found in every electrical and electronic product – from automotive and industrial electronics through information and communications to consumer

APT5027BNR

Abstract: APT5027
Contextual Info: s o D 6 s A d v a n ced P o w er Te c h n o l o g y • APT5027BNR 500V 20.0A 0.27Q TOWER MOS IV^ AVALANCHE RATED N -C H A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified. Parameter

Contextual Info: ADVANCED POÜIER TECHNOLOGY □ SSTIGT G000fl7fl 03S « A V P blE D A dvanced P o w er Te c h n o l o g y * APT45GF60BN 600V 45A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol V CES

1SV80

Abstract: APT45GF60BN Thyristor BT 102 A 03e 000D t71 thyristor
Contextual Info: ADVANCED POI dER TECHNOLOGY b lE 025710^ 0000070 032 « A V P D A d van ced PO W ER Te c h n o l o g y " APT45GF60BN 600V 45 A POWER MOS IV 1GBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.

transistor GC cd

Contextual Info: A DV A NC ED POWER TECHNOLOGY b lE 0 2 S 7 ti D ,i D GDODflbb 310 HAVP ADVANCED PO W ER Te c h n o lo g y APT45GL100BN 1000V 45A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol

Contextual Info: APT5028SVR A dvanced po w er Te c h n o l o g y 500V 20A 0.280Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

Contextual Info: ADVANCED POWER TECHNOLOGY L IE D • 0 2 5 7 *1 0 ^ 0000014 2ÔS ■ AVP A d v a n ced po w er Te c h n o l o g y * APT50GF100BN 1000V 50A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS

APT45G100BN

Contextual Info: ADVANCED POIdER T E C H N O L O G Y bl E □ 2 5 7 ^ 0*1 OOOOfl'i'ï flb? D A d van ced po w er Tec h n o lo g y * APT45G100BN 1000V 45A POWER MOS IV IGBT N -C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS

APT45GL100BN

Abstract: 10A fast Gate Turn-off Thyristor
Contextual Info: A D V A NC ED POWER TECHNOLOGY b lE OZSTSCm D OOOOèbb 310 HAVP A D V A N C ED PO W ER Te c h n o l o g y • APT45GL100BN 1000V 45A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol

Contextual Info: APT10M11JVR ADVANCED W 7Æ P o w e r Te c h n o l o g y ioov i44a 0 .01 m POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Brushless DC BLDC Single-Chip Motor Drive IC

Abstract: pwm ic 494 ECN3018SPR motor softstart 3 phase pwm signal generator ic hall 3018 ECN3018 ECN3018SP ECN3018SPV high voltage 3-phase motor driver ic
Contextual Info: HIGH VOLTAGE MONOLITHIC IC ECN3018 Brushless DC BLDC Single-Chip Motor Drive IC The ECN3018 is a fully integrated, single-chip BLDC motor driver that facilitates a rapid design process and low part count solution. The chip integrates BLDC Logic with a 3-Phase

APT50GL60BN

Abstract: 25CC
Contextual Info: A D V A NC ED PO WER T E C H N O L O G Y blE D • O a S ? ^ 1! OOOOflSM bTT * A V P ■ R A d v a n c W /< A P O W E R e d rJ m I T e c h n o l o g y APT50GL60BN 600V 50A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR

xr 2204

Abstract: Amptek XR-100CR XR-100T-CZT RTD 1055 lemo 6 pin connector lemo connector LEMO px2cr 9pin D-connector
Contextual Info: R AMP TEK All Solid State Design No Liquid Nitrogen s Landed on Mar 7 9 19 , 4 ly Ju FET Be Window Detector Temperature Monitor Cooler Mounting Stud • • • • • • Si-PIN Photodiode Thermoelectric Cooler Beryllium Window Hermetic Package TO-8 Wide Detection Range

Contextual Info: ADVANCED POWER TECHNOLOGY blE D Bi QSSTIQT 0000Ô56 244 B A V P • R A d v a n ced F M P o w er Te c h n o l o g y APT75GL60BN 600V 75A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS

Contextual Info: A D V A N C E D PO WE R T E C H N O L O G Y blE D • 0257^0=1 0 0 0 0 0 5 4 bTI H A V P ■ r W /jA A dvanced pow er Te c h n o l o g y APT50GL60BN 600V 50A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR

IR E78996

Abstract: 6J450 T45 diode 6H450 E78996 rectifier module E78996 diode FK 330
Contextual Info: INTERNATIONAL RECTIFIER bSE J> Wt 4ÛSS452 001b3E3 750 • INR Bulletin E27113 International IxqrIRectifier IRFK6H450,IRFK6J450 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996.

APT45G100BN

Abstract: i287
Contextual Info: ADVANCED POUER TECHNOLOGY blE D • GSST'lD'l GOGGfl'î'î flb? ■ AVP ADVANCED PO W ER Te c h n o l o g y APT45G100BN P O W E R M O S 1000V 45A IV IG B T N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS

Contextual Info: IMAGE SENSORS DATA SHEET FTF3020M 6M Full-Frame CCD Image Sensor Product specification DALSA Professional Imaging 2007 September 5 DALSA Professional Imaging Product Specification 6M Full-Frame CCD Image Sensor FTF3020M • 35mm film compatible image format 36 x 24 mm

Contextual Info: IMAGE SENSORS DATA SHEET FTF3020M 6M Full-Frame CCD Image Sensor Product specification DALSA Professional Imaging 2006 October 30 DALSA Professional Imaging Product Specification 6M Full-Frame CCD Image Sensor FTF3020M 2 • 35mm film compatible image format 36 x 24 mm

BC 9015 transistor

Abstract: ccd color Linear Image Sensor ccd image sensor Melles Griot pnp transistor 9015 TRANSISTOR BC 157 BG40 CM500 FTF3020M 2048 x 1 ccd linear array
Contextual Info: IMAGE SENSORS DATA SHEET FTF3020M 6M Full-Frame CCD Image Sensor Product specification DALSA Professional Imaging May 12, 2009 DALSA Professional Imaging Product Specification 6M Full-Frame CCD Image Sensor FTF3020M • 35mm film compatible image format 36 x 24 mm