CQX 88 Search Results

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

LED56F

Abstract: F5E3 IR LED 940 nm
Contextual Info: Hermetic Light Emitting Diodes TO-46 Diode Package Flat Lens 0.209 (5.31) 0.184 (4.67) 0.030 (0.76) NOM 0.155 (3.94) MAX 1.00 (25.4) MIN ANODE (CASE) 0.100 (2.54) 0.050 (1.27) Part Number PO @ 100 mA IF VF @ 100 mA IF (mW) (V) min max max IR @ 3 V VR (µA)

marking code motorola ic

Abstract: CQX 88 MSB71O-QTI 318D-03 MSB71O-RT1
Contextual Info: Order this data sheet by MSB71 O-QTl/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-59 package which is designed for low power

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

Contextual Info: CQX48 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.

CQX 88

Contextual Info: CQX48 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.

CQX48B

Contextual Info: CQX48 Vishay Semiconductors GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.

CQX 88

Abstract: BPW78 CQX48
Contextual Info: CQX48 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.

BPW78

Abstract: CQX48
Contextual Info: CQX48 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.

Contextual Info: CQX48 Vishay Semiconductors GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.

BPW78

Abstract: BPW78A BPW78B bpw 104
Contextual Info: BPW78 Silicon NPN Phototransistor Description BPW78 is a high sensitive silicon NPN epitaxial planar phototransistor in a flat side view plastic package. A small recessed lens provides a high sensitivity in a low profile case. The epoxy package itself is an IR filter, spectrally

CQX 88

Abstract: BPW78 CQX48
Contextual Info: CQX48 Vishay Semiconductors GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.

led 7 segment anode TIL 702

Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
Contextual Info: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9

vh41

Abstract: u327
Contextual Info: DM 1M36SJ & DM 1M32SJ 1Mbx 36/1Mbx 32EnhancedDRAMSIMM A / r ^ M I R O N Features Preliminary Datasheet Architecture m Compatibility with JEDEC • ■ ■ ■ ■ ■ 1M x 36 DRAM SIMM Configuration Allows Performance Upgrades in System Integrated 512 \ 36 SRAM Cache Row Register Allows 15ns

U2794B

Abstract: U2794B-AFS AD620 U2794B-AFSG3 AD620 application note 9842
Contextual Info: U2794B TELEFUNKEN Semiconductors 1000 MHz Quadrature Demodulator Description U2794B silicon monolithic integrated circuit is a quadrature demodulator that is manufactured using TELEFUNKEN’s advanced UHF technology. This demodulator features a frequency range from

AD620

Abstract: U2794B ad620 filter st 9919 9842
Contextual Info: U2794B TELEFUNKEN Semiconductors 1000 MHz Quadrature Demodulator Description U2794B silicon monolithic integrated circuit is a quadrature demodulator that is manufactured using TELEFUNKEN’s advanced UHF technology. This demodulator features a frequency range from

AD620

Abstract: U2791B U2791B-FS
Contextual Info: Tem ic U2791B S e m i c o n d u c t o r s 1000 MHz Quadrature Demodulator Description U2791B silicon monolithic integrated circuit is a quadra­ ture demodulator that is manufactured using TEMIC Semiconductors’ advanced UHF technology. This demodulator features a frequency range from

pin diagram of IC 9976

Abstract: ad620 filter AD620 U2791B U2791B-FS ST 9841
Contextual Info: U2791B TELEFUNKEN Semiconductors 1000 MHz Quadrature Demodulator Description U2791B silicon monolithic integrated circuit is a quadrature demodulator that is manufactured using TELEFUNKEN’s advanced UHF technology. This demodulator features a frequency range from

AD620 ic circuits used in other application

Abstract: st 13007 AD620 AD620 datasheet CQX 88 ST 9841 pin diagram of IC 9976 AD620 application note CI 13007 datasheet and application AD620
Contextual Info: U2791B 1000 MHz Quadrature Demodulator Description U2791B silicon monolithic integrated circuit is a quadrature demodulator that is manufactured using TEMIC Semiconductors’ advanced UHF technology. This demodulator features a frequency range from 100 – 1000 MHz, low current consumption, selectable

pin diagram of IC 9976

Abstract: AD620 U2791B U2791B-FS ST 9841
Contextual Info: U2791B TELEFUNKEN Semiconductors 1000 MHz Quadrature Demodulator Description U2791B silicon monolithic integrated circuit is a quadrature demodulator that is manufactured using TELEFUNKEN’s advanced UHF technology. This demodulator features a frequency range from

Contextual Info: DALLAS SEMICONDUCTOR DS1021 Programmable 8-Bit Silicon Delay Line PIN ASSIGNMENT FEATURES • All-silicon time delay c 16 15 : OUT Q/PO c 3 14 S P1 c 4 13 : 12 : P7 11 : 10 C E c • Programmable using 3-wire serial port or 8-bit part llel port P2 c P3 c • Leading and trailing edge accuracy

application note of ad620

Abstract: AD620 AD620 ic circuits used in other application datasheet and application AD620 U2794B CI 13007 AD620 application note SSO20 U2794B-AFS U2794B-AFSG3
Contextual Info: U2794B 1000 MHz Quadrature Demodulator Description U2794B silicon monolithic integrated circuit is a quadrature demodulator that is manufactured using TEMIC Semiconductors’ advanced UHF technology. This demodulator features a frequency range from 70 – 1000 MHz, low current consumption, selectable

U10A-14

Abstract: U11A-8 CQX 86 512kx8 dram simm cqx 87 u12A U11C U832 U12A-14 u318
Contextual Info: DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page