CQX 88 Search Results

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

Contextual Info: CQX48 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.

CQX 88

Contextual Info: CQX48 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.

BPW78

Abstract: CQX48
Contextual Info: CQX48 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.

Contextual Info: CQX48 Vishay Semiconductors GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.

AD620

Abstract: U2794B ad620 filter st 9919 9842
Contextual Info: U2794B TELEFUNKEN Semiconductors 1000 MHz Quadrature Demodulator Description U2794B silicon monolithic integrated circuit is a quadrature demodulator that is manufactured using TELEFUNKEN’s advanced UHF technology. This demodulator features a frequency range from

pin diagram of IC 9976

Abstract: ad620 filter AD620 U2791B U2791B-FS ST 9841
Contextual Info: U2791B TELEFUNKEN Semiconductors 1000 MHz Quadrature Demodulator Description U2791B silicon monolithic integrated circuit is a quadrature demodulator that is manufactured using TELEFUNKEN’s advanced UHF technology. This demodulator features a frequency range from

pin diagram of IC 9976

Abstract: AD620 U2791B U2791B-FS ST 9841
Contextual Info: U2791B TELEFUNKEN Semiconductors 1000 MHz Quadrature Demodulator Description U2791B silicon monolithic integrated circuit is a quadrature demodulator that is manufactured using TELEFUNKEN’s advanced UHF technology. This demodulator features a frequency range from

Contextual Info: Tem ic U2794B S e m i c o n d u c t o r s 1000-MHz Quadrature Demodulator Description The U2794B silicon monolithic integrated circuit is a quadrature demodulator which is manufactured using TEMIC Semiconductors’ advanced UHF technology. This demodulator features a frequency range from

Photo diode TFK S 186 P

Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
Contextual Info: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission

CS4810

Contextual Info: Temic U2791B S e m i c o n d u c t o r s 1000-MHz Quadrature Demodulator Description The U2791B silicon monolithic integrated circuit is a quadrature demodulator which is manufactured using TEMIC Semiconductors’ advanced U HF technology. This demodulator features a frequency range from

AD620

Abstract: U2794B CI 13007 SSO20 U2794B-MFS U2794B-MFSG3
Contextual Info: U2794B 1000-MHz Quadrature Demodulator Description The U2794B silicon monolithic integrated circuit is a quadrature demodulator which is manufactured using Atmel Wireless & Microcontrollers’ advanced UHF technology. This demodulator features a frequency range

CS4810

Contextual Info: U2794B 1000-MHz Quadrature Demodulator Description The U2794B silicon monolithic integrated circuit is a quadrature demodulator which is manufactured using TEMIC Semiconductors’ advanced UHF technology. This demodulator features a frequency range from 70 MHz to 1000 MHz, low current consumption, selectable gain, power-down mode and adjustment-free

Contextual Info: Tem ic U2794B S e m i c o n d u c t o r s 1000-MHz Quadrature Demodulator Description The U2794B silicon monolithic integrated circuit is a quadrature demodulator which is manufactured using TEMIC Semiconductors’ advanced U HF technology. This demodulator features a frequency range from

U23C-36

Contextual Info: •K p n h o n p p f V i i DM 1M64DT6/DM1M72DT6 Multibank EDOEDRAM m m * d 1 2 ra m d i m m ProductSpecification Features ■ 16Kbytes SAM Cache Memory for 12ns Random Reads Within Eght Active Pages Multi bank CSche ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page

Contextual Info: IBM14M3272IBM14M6472 IBM14M3264 High Performance SRAM Modules Features • 256K and 512K secondary cache module family using Synchronous and Asynchronous SRAM for PowerPC applications • Single +3.3V or +5V, +/- 5% power supply • Organized as a 32K or 64K x 72 package on a

pin DIAGRAM OF IC 7428

Contextual Info: IBM14N3264 IBM14N6464 High Performance SRAM Modules Features • 256KB and 512KB secondary cache module family for Intel Triton chip set. • Organized as a 32K or 64K x 64 package on a 4.34” x 1.13”, 160-lead, Dual Read-out DIMM • Available in interleaved ¡486/Pentium burst

Contextual Info: Enhanced IV f e m o iy S y s t e m s DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 Enhanced DRAM SIMM In c . Product Specification Features A rchitecture The DM2M36SJ • 4KByte SRAM Cache Memory for 12ns Random Reads Within Two Active Cache Pages ■ Fast DRAM Array for 30ns A sess to Any New Page

RNS-D

Abstract: LBGH
Contextual Info: V,yujwj}rxw dx dn{vrwxuxpRwm X~rmnurwn| _o bnuj- `{nojln 9?= Tqjy}n{ H dqn Sj|rl dn{vrwxuxp- _o bnuj-| 9?> 85 Gnms`bs T`q`ldsdqr /sgd ntsots ne sgd qdk`xr0 9?> 95 Gg`q`bsdqhrshbr T`q`ldsdqr 9? :5 Gnhk T`q`ldsdqr /sgd hmots ne sgd qdk`xr0 9?@ ;5 W`edsx Eooqnu`k

L14F1 phototransistor datasheet

Abstract: l14f1 ir phototransistor PIN CONFIGURATION OF L14F1 L14F1 PHOTOTRANSISTOR Phototransistor L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3
Contextual Info: Infrared Products Selection Guide Analog Discrete Interface & Logic Optoelectronics July 2002 • • • • • • Electrical and Optical Specifications Absolute Maximum Ratings Package Specifications Ordering Information Glossary of Terms Frequently Asked Questions

Contextual Info: Enhanced H IV f e m o iy S u t e r n s DM512K64DTBDM512K72DTE Multibank Burst EDOEDRAM 5 12Kb x 64/512Kb x 72 Enhanced DRAM DIMM b e . Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache

Contextual Info: Enhanced DM1M64DTE/DM1M72DTE M ultibank Burst EDOEDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM IVfemoiy Suterns be. H Product Specification Features row register over a 2Kbyte-wide bus in just 18ns for an effective cache • 16Kbytes SRAM Cache Memory for 12ns Random Reads Within

TFK 7 segment displays

Abstract: TFK 609 7-segment display tfk "seven segment display" tfk tfk 648 TFK BPW 41 N smd code marking Ld50 tfk 605 TFK 7 segment d 350 28 tfk 727
Contextual Info: LEDs and Displays Data Book 1996 TELEFUNKEN Semiconductors Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Selector Guide – Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .