COXD Search Results

47 16L cap

Abstract: CS51021 CS51022 CS51023 CS51024 8.2Y
Contextual Info: CS51021/22/23/24 CS51021/CS51023 CS51022/CS51024 Enhanced Current Mode PWM Controller Features D escription The C S 5 1 0 2 1 /2 2 /2 3 /2 4 Fixed Frequency PW M Current M ode Controller family provides all neces­ sary features required for AC-DC or DC-DC primary side control.

ITS25F12

Abstract: ITS25F12P T0247 pspice high frequency igbt
Contextual Info: M ITEL S E M IC O N D U C T O R ITS25F12 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4718-2.3 DS4718-3.2 March 1999 Key Parameters The ITS25F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

ITS35F12

Abstract: ITS35F12P T0247
Contextual Info: M ITEL S E M IC O N D U C T O R ITS35F12 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4719-2.3 DS4719-3.2 March 1999 Key Parameters The ITS35F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

DI810

Contextual Info: M ITEL ITS06F03 Medium Frequency Powerline N-Channel IGBT SEMICONDUCTOR Supersedes April 1998 version, DS4866-1.3 DS4866-2.1 February 1999 The ITS06F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of low to medium

ITS15F12P

Abstract: T0247
Contextual Info: M ITEL S E M IC O N D U C T O R ITS15F12 Medium Frequency Powerline N-Channel IGBT Supersedes February 1998, version DS4717-2.3 DS4717-3.2 March 1999 Key Parameters The ITS15F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

IGBT Pspice

Contextual Info: ITS60F06 ITS60F06 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4715-2.2 DS4715-4.0 May 1999 The ITS60F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of low to medium

IGBT Pspice

Abstract: sc 1091
Contextual Info: MITEL ITS30F03 Medium Frequency Powerline N-Channel IGBT SEM ICON D UCTOR Supersedes April 1998, version DS4925-1.2 DS4925-2.2 February 1999 Key Parameters The ITS30F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

Contextual Info: ^ 1-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-W 0RDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM

Contextual Info: MITEL ITS18F03 Medium Frequency Powerline N-Channel IGBT SEMICONDUCTOR Supersedes April 1998, version DS4867-1.3 DS4867-2.2 February 1999 The ITS18F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of low to medium

Contextual Info: M ITEL ITS03F03 Medium Frequency Powerline N-Channel IGBT SEMICONDUCTOR Supersedes April 1998, version DS4926 - 1.1 DS4926 - 2.2 February 1999 The ITS03F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of low to medium

coxd

Contextual Info: M ITEL S E M IC O N D U C T O R ITS18F03 Medium Frequency Powerline N-Channel IGBT Supersedes April 1998, version DS4867-1.3 DS4867-2.2 February 1999 Key Parameters The ITS18F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

pspice high frequency igbt

Abstract: dc chopper circuit PSPICE Orcad ITS13F06B
Contextual Info: M ITEL S E M IC O N D U C T O R ITS13F06 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4712-2.2 DS4712-3.2 March 1999 Key Parameters The ITS13F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

T 600 D

Abstract: ITS40F06 ITS40F06P T0247 PSPICE Orcad ITS40
Contextual Info: MITEL ITS40F06 Medium Frequency Powerline N-Channel IGBT SEM ICON D UCTOR Supersedes February 1998, version DS4682-3.4 DS4682-4.2 March 1999 Key Parameters The ITS40F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

POWER BJTs

Abstract: AN1540 IXYS SCR Gate Drive vertical pnp bjt failure analysis IGBT Drive Base BJT Nippon capacitors IGBT tail time
Contextual Info: MOTOROLA Order this document by AN1540/D SEMICONDUCTOR APPLICATION NOTE AN1540 Application Considerations Using Insulated Gate Bipolar Transistors IGBTs Prepared by: C.S. Mitter Motorola Inc. DEVICE CHARACTERISTICS The recently introduced Insulated Gate Bipolar Transistor

1654p

Abstract: mj 15003 power circuit IGBT Pspice mj 15003 transistor ON MJ 15003
Contextual Info: M ITEL S E M IC O N D U C T O R ITS08F12 Medium Frequency Powerline N-Channel IGBT Supersedes February 1998, version DS4716-2.4 DS4716-3.2 March 1999 Key Parameters The ITS08F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

DS4715-2

Abstract: pspice high frequency igbt ITS60F06P T0247 ITS60F06
Contextual Info: M ITEL S E M IC O N D U C T O R ITS60F06 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4715-2.2 DS4715-3.2 March 1999 Key Parameters The ITS60F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

Power MOSFET TT 2146 sanyo

Abstract: Power MOSFET TT 2146 smd diode 107c
Contextual Info: Z£19SD Dual Output CPU Buck Controller Description The CS-5132 is a d ual o u tp u t CPU pow er supply controller. It con­ tains a synchronous du al NFET buck controller utilizing the V2 control m ethod to achieve the fastest possible transient response

pspice high frequency igbt

Abstract: DS4926
Contextual Info: MITEL ITS03F03 Medium Frequency Powerline N-Channel IGBT SEM ICON D UCTOR Supersedes April 1998, version DS4926 - 1.1 DS4926 - 2.2 February 1999 Key Parameters The ITS03F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

T0252

Abstract: ITS06F03B ITS06F03G
Contextual Info: M ITEL S E M IC O N D U C T O R ITS06F03 Medium Frequency Powerline N-Channel IGBT Supersedes April 1998 version, DS4866-1.3 DS4866-2.1 February 1999 Key Parameters The ITS06F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

pspice high frequency igbt

Abstract: DS4713-2 ITS23F06 ITS23F06P T0247
Contextual Info: M ITEL S E M IC O N D U C T O R ITS23F06 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4713-2.3 DS4713-3.2 March 1999 Key Parameters The ITS23F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for