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    ITS60F06P Datasheets Context Search

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    IGBT Pspice

    Contextual Info: ITS60F06 ITS60F06 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4715-2.2 DS4715-4.0 May 1999 The ITS60F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of low to medium


    Original     		its60f06ds4715-2ds4715-4igbt pspice PDF

    transistor 80505

    Contextual Info: S i GEC PLESSEY junei997 SEMI CO NDUC TOR S PRELIMINARY INFORMATION DS4715-1.3 ITS60F06 POWERLINE N-CHANNEL IGBT The ITS60F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		junei997ds4715-1its60f06transistor 80505 PDF

    DS4715-2

    Abstract: pspice high frequency igbt ITS60F06P T0247 ITS60F06
    Contextual Info: M ITEL S E M IC O N D U C T O R ITS60F06 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4715-2.2 DS4715-3.2 March 1999 Key Parameters The ITS60F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


    OCR Scan     		its60f06ds4715-2ds4715-3t0247+2pspice high frequency igbtits60f06p PDF