CONTINUOUS DRAIN Search Results

Contextual Info: TECHNICAL BULLETIN TB-3060 Full-Time Continuous Monitor Installation, Operation and Maintenance Figure 1. Desco Full-Time Continuous Monitor Description Leading companies use continuous monitors as a cost effective component in satisfying the paragraph 6.1.3

smd transistor bq

Abstract: smd transistor H F BQ 20 smd transistor buk202-50y
Contextual Info: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK202-50Y QUICK REFERENCE DATA SYMBOL PARAMETER •l Nominal load current ISO SYMBOL PARAMETER APPLICATIONS Continuous off-state supply voltage Continuous load current Continuous junction temperature

Contextual Info: QS6K1 Transistors Switching 30V, 1.0A QS6K1 !External dimensions (Units : mm) TSMT6 Continuous Drain current Pulsed Source current Continuous (Body diode) Pulsed Total power dissipation (TC=25°C) Channel temperature Storage temperature (2) (3) 0.4 +0.1

K01 equivalent

Contextual Info: QS6K1 Transistors Switching 30V, 1.0A QS6K1 zExternal dimensions (Unit : mm) TSMT6 Continuous Drain current Pulsed Source current Continuous (Body diode) Pulsed Total power dissipation (TC=25°C) Channel temperature Storage temperature (2) (3) 0.4 +0.1 −0.05

Contextual Info: Æxitxan PRODUCT DEVICES.INC. 200V, 120A, 0.03n ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER DRAIN-SOURCE VOLTAGE DRAIN-GATE VOLTAGE Rgs=1 .OMn GATE-SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT CONTINUOUS (Tc = 25*C) DRAIN CURRENT PULSED TOTAL POWER DISSIPATION

Contextual Info: QS6K1 Transistors Switching 30V, 1.0A QS6K1 zExternal dimensions (Unit : mm) TSMT6 Continuous Drain current Pulsed Source current Continuous (Body diode) Pulsed Total power dissipation (TC=25°C) Channel temperature Storage temperature (2) (3) 0.4 +0.1 −0.05

Contextual Info: QS6K1 Transistors Switching 30V, 1.0A QS6K1 zExternal dimensions (Unit : mm) TSMT6 Continuous Drain current Pulsed Source current Continuous (Body diode) Pulsed Total power dissipation (TC=25°C) Channel temperature Storage temperature (2) (3) 0.4 +0.1 −0.05

DIODE l02

Abstract: code l02 2n7002 pinout marking 02J sot transistor pinout marking l02
Contextual Info: CMLDM7002A CMLDM7002AJ* SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode)

CMLDM7002AJ

Abstract: 2N7002 CMLDM7002A marking 02J
Contextual Info: CMLDM7002A CMLDM7002AJ SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode)

DIODE l02

Abstract: dual mosfet "marking code 30" marking l02
Contextual Info: CMLDM7002A DUAL N-CHANNEL ENHANCEMENT-MODE SURFACE MOUNT MOSFET SOT-563 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current

CMXDM7002A

Abstract: X02A 2N7002
Contextual Info: CMXDM7002A DUAL N-CHANNEL ENHANCEMENT-MODE SURFACE MOUNT MOSFET SOT-26 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current

c702a

Contextual Info: CMPDM7002A SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-23 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current

MPF910

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Sw itching M PF910 N-Channel — Enhancement 3 DRAIN MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage — Continuous — Non-repetitive tp < 50 j i s Drain Current - Continuous^) - Pulsedi2) Symbol

X02A

Abstract: CMXDM7002A 2N7002
Contextual Info: CMXDM7002A SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-26 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current

L3705N

Abstract: 1RLZ34N l3705nl 1RLZ24 91323 IRL3103L IRL2505 IRL2203N L-370
Contextual Info: HEXFE1 Power MOSFETs International IC2R Rectifier !d •d v {BR 0SS Continuous R0 Drain-to-Source *DS on) Continuous Drain Current On-State Drain Current Breakdown Max. Thermal Max. Power 100° Part Resistance Voltage Resistance Dissipation 25°C Number

BR2450A

Abstract: BR2477A BR2450
Contextual Info: BR2450A/ BR2477A / • Dimensions mm ■ Dimensions(mm) 0.5 1.6 Chapter 2 ■ Specification ■ Specification 3 Nominal voltage(V) 3 Nominal capacity(mAh) Continuous drain(mA) 550 Nominal capacity(mAh) Continuous drain(mA) 1,000 0.03 Operating temperature(˚C)

CR2354

Abstract: CR2330
Contextual Info: CR2330 CR2354 • Dimensions mm ■ Dimensions(mm) Chapter 2 ■ Specification ■ Specification 3 Nominal voltage(V) 3 Nominal capacity(mAh) Continuous drain(mA) 265 Nominal capacity(mAh) Continuous drain(mA) 560 0.2 Operating temperature(˚C) -30 to +60

Contextual Info: BR1225A/ BR1632A/ • Dimensions mm ■ Dimensions(mm) Chapter 2 ■ Specification ■ Specification 3 Nominal voltage(V) 3 Nominal capacity(mAh) Continuous drain(mA) 48 0.03 Nominal capacity(mAh) Continuous drain(mA) 0.03 Operating temperature(˚C) -40 to +125

Contextual Info: B 59 9-97 J232 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR AUDIO AMPLIFIER Absolute maximum ratings at TA= 25'C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Process NJ16

Contextual Info: CR2477 CR3032 • Dimensions mm ■ Dimensions(mm) Chapter 2 ■ Specification ■ Specification 3 Nominal voltage(V) 3 Nominal capacity(mAh) Continuous drain(mA) 1,000 Nominal capacity(mAh) Continuous drain(mA) 500 0.2 -30 to +60 Operating temperature(˚C)

2n5020

Contextual Info: B 18 9 -9 7 2N5020, 2N5021 P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maxim um ratings a t T * = 25°C • Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation

BR1632A

Abstract: br1225a
Contextual Info: BR1225A/ BR1632A/ • Dimensions mm ■ Dimensions(mm) Chapter 2 ■ Specification ■ Specification 3 Nominal voltage(V) 3 Nominal capacity(mAh) Continuous drain(mA) 48 0.03 Nominal capacity(mAh) Continuous drain(mA) 0.03 Operating temperature(˚C) -40 to +125

BS107

Abstract: BS107 application BS107A BS107ARL1 BS107ARLRM BS107ARLRP BS107RL1 BS107RLRA
Contextual Info: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N–Channel TO–92 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage – Continuous – Non–repetitive tp ≤ 50 µs Drain Current Continuous (Note 1.) Pulsed (Note 2.)

Contextual Info: CR1216 CR1220 • Dimensions mm ■ Dimensions(mm) Chapter 2 ■ Specification ■ Specification 3 Nominal voltage(V) 3 Nominal capacity(mAh) Continuous drain(mA) 25 0.1 Nominal capacity(mAh) Continuous drain(mA) 0.1 Operating temperature(˚C) -30 to +60