COND Search Results

Contextual Info: GaAÄAs IRED a PHOTO-MOS FET TLP595G TELECOMMUNICATION Unit in m m DATA ACQUISITION MEASUREMENT INSTRUMENTATION The T O S H I B A T L P 5 9 5 G condists of an a l u m i n u m g alium ar s e n i d e infra red e m i tting diode o p t i c a l l y coupled to a p h o t o - M O S FET in a eight lead plastic D IP

TLP55

Contextual Info: T O SH IB A TLP5590GM TOSHIBA PHOTOCOUPLER GaAM s IRED + PHOTO-IC TLP55 90GM) TRANSISTOR INVERTOR U nit in mm INVERTER FOR AIR CONDITIONER LINE RECEIVER IPM INTERFACES The TOSHIBA TLP559 IGM) consists of a GaA£As high-output light emitting diode and a high speed detector of one chip photo diodetransistor.

thyristor

Abstract: reverse-conducting thyristor Gate Turn-off Thyristor Thyristor triac
Contextual Info: 7. GRAPHICAL SYMBOL Type P Gate Thyristor SCR Bi Directional Triode Thyristor (Triac) Reverse-Conducting Thyristor Gate Turn-off Thyristor Graphical Symbol - ^ T,- 1 - - N-Gate Thyristor (PUT) 84 V T'

F585

Contextual Info: February 6, 1997 TIM5964-16L-151 1•RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Pow er at 1dB SYMBOL CONDITION P id B Ta= 25 °C MIN. TYP. MAX. UNIT 41.5 42.5 6.0 7.0 — dBm Com pression Point Pow er G ain at 1dB G id B Com pression Point V d s = 10V

Contextual Info: Apr. 1998 T IM 3 7 4 2 -4 5 S L -3 4 1 1. RF PERFORMANCE SPECIFICATIONS f Ta= 25 °C CHARACTERISTICS SYMBOL CONDITION MIN. TYP. MAX. UNIT Output Power at 1dB 46.0 46.5 PldB — dBm Compression Point VDS= 10V GldB — Power Gain at 1dB 10.0 f=3.3-3.6GHz —

74AC series

Abstract: POM-n
Contextual Info: 9 P R E C A U T IO N S IN D E S IG N IN G C IR C U IT S 9-1 Input Processing 1 Processing of unused gates. Inputs of CMOS IC have such a high im pedance th at the logic level becom es undefined under open conditions. If the input is a t an interm ediate level, the P -channel and N -channel transistors both turn

S5J53

Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Contextual Info: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction

CS thyristor

Abstract: Thyristor CS 165 SHR400 cs50n SG1500GXH25 SL3000GX22 2500v SHR400R22 reverse conducting thyristor 4500v
Contextual Info: Gate Turn-O ff Thyristors Anode Short Type Reverse Conducting Type Symmetrical Type -> Peak Off State Voltage 2500V 4500V Type No. SG800EX25* SG1400EX25" SGB00GXH25 SGR3000EX26 SG1500GXH25 SG3000GXH25 SGR3000GXH26 It q q m 800 1400 1500 3000 C2 C2 * underdevelopment

ieee754

Abstract: TRW LSI Products IEEE-754 ABMT C3202
Contextual Info: Floating-Point Arithmetic T iT w V Fixed-point digital signal processor design requires careful attention to dynam ic range, limit cycles, and overflow conditions. Block floating-point is often used to extend the dynam ic range, but it carries with it significant bookkeeping overhead.

Contextual Info: 4. Solder-mounting Flat Package ICs 1. Soldering conditions a. Soldering iron Solder a t lead tem p eratu re of 2 6 0 t for no m ore than 10 conds or a t 350°C fo r no m ore th a n 3 conds. b. Infrared reflow 1 W e recom m end heating m ethods in far-interm ediate infrared shown a t the top and bottom of

Contextual Info: TOSHIBA July 1997 TIM1414-7-252 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C Ì CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT 37.0 38.0 — dBm

Contextual Info: Oct. 1998 PRELIMINARY TIM5964-4SL-031 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C Ì CHARACTERISTICS SYMBOL CONDITION MIN. TYP. MAX. UNIT Output Power at ldB PldB 35.5 36.5 dBm Compression Point Vds= 10V Power Gain at ldB GldB f-5.9-6.4GHz 8.0 9.0 dB IDS-1.1A

5252 F ic

Contextual Info: TOSHIBA July 1997 TIM1414-5-252 1. R F PERFO R M A N CE SP E C IFIC A T IO N S CHARACTERISTICS SYMBOL Output Power at ldB Compression Point P i dB Power Gain at ldB Compression Point GldB CONDITION MIN. TYP. MAX. UNIT 36.5 37.5 — dBm 4.5 5.5 — dB - 2.0

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-15L RF Performance Specifications Ta = 25°C Characteristic Symbol Output Power at 1 dB Compression Point P 1dB Power Gain at 1dB Compression Point G 1dB Condition Unit Min. Typ. Max. dBm 41.0 42.0 - dB 6.0 7.0 -

polyester TRW capacitor

Contextual Info: TR Ì TDC4169 Precision +10.000 Volt Voltage Reference The TDC4169 is a voltage reference offering exceptional accuracy and stab ility over a w ide range of tem perature and power supply conditions. The TDC4169 produces a reference voltage of +10.000 Volts generated from a power

CIRCUITS-13

Contextual Info: 9. PRECAUTIONS IN DESIGNING CIRCUITS 9-1 Input Processing 1 Processing of unused gate Inputs of CMOS IC have such a high im pedance th at th e logic level becom es undefined under open conditions. If th e input is a t an interm ediate level, the P-channel and N-channel transistors both tu rn on, and excessive supply cu rren t flows.

947-75

Contextual Info: Oct. 1997 JS9P08-AS Draft 1 RF PERFORMANCE. SPECIFICATIONS CHARACTERISTICS O utput Powder at ldB Com pression Point Pow er Gain, at ldB Compression Point D rain C urrent Pow er Added Efficiency ( Ta= 2K°C 1 SYMBOL CONDITION MIN. TYP. M AX U N IT PldB 21.5 23.0 — dBm

Contextual Info: TOSHIBA MICROWAVE POW ER MMIC S9782 MICROWAVE CONDUCTOR TECHNICAL DATA Preliminarv 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C ^ CHARACTERISTICS |SYMBOL CONDITION | M IN. 1 TYP. O u tp u t Pow er Po 37.0 38.0 v d d i= v d d 2 = v d d 3 = io v U N IT —

SMC MARKING Sk

Abstract: SK520C
Contextual Info: SK52C - SK520C CREAT BY ART 5.0AMPS Surface Mount Schottky Barrier Rectifiers SMC/DO-214AB Features — For surface mounted application — Metal to sillicon rectifier, majority carrier conduction — Low forward voltage drop — Easy pick and place — High surge current capability

Contextual Info: SSH210 CREAT BY ART 2.0AMPS. Surface Mount Schottky Barrier Rectifier SMB Pb RoHS COMPLIANCE Features — For surface mounted application — Easy pick and place — Metal to silicon rectifier, majority carrier conduction — Low power loss, high efficiency —

Contextual Info: Advance Product Information November 26, 2002 6 - 18 GHz 2.8 Watt, 24 dB Power Amplifier TGA2501-EPU Key Features and Performance • • • • • • • Preliminary Measured Performance Primary Applications Bias Conditions: VD = 8V ID = 1.2A 20 S21 28

6045pt

Abstract: MBR6050PT-60100PT PT-60 MBR60XXPT
Contextual Info: MBR6035PT - MBR60100PT CREAT BY ART Pb 60.0AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD RoHS COMPLIANCE Features — UL Recognized File # E-326243 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction

a12 SOT363

Abstract: W1 sot 363
Contextual Info: MBD4448HAQW/HADW/HCDW/HSDW/HTW Switching Diode Preliminaty Small Signal Diode SOT-363 Features Fast switching speed Surface device type mounting Moisture sensitivity level 1 High Conductance Power Dissipation For General Purpose Switching Applications

OC74

Contextual Info: Advance Product Information September 27, 2004 10Gb/s Wide Dynamic Range Differential TIA TGA4817-EPU Key Features and Performance • • • • • • • • Preliminary Measured Performance Bias Conditions: V+=3.3V I+=70mA 76 Differential Zt dB-Ohm