COMPRESSION Search Results

Contextual Info: Texas Instruments TGA8300 Monolithic 2- to 18-GHz Amplifier Features • ■ ■ ■ ■ 18-dBm typical output power at 1-dB gain compression 6.5-dB gain Input and output SWR less than 2:1 Size: 0.093 x 0.064 x 0.006 inch Recessed V ^ m gate structure Description

TIM1414-4LA-371

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation

Contextual Info: Texas Instruments Microwave Military Components TGM8014 Carrier Plate Assembly Product Features • 0.6-watt average output power at 1-dB gain compression ■ 6 to 18 GHz bandwidth ■ Automated assembly ■ Selectable gate biasing ■ 100% RF screening Product Description

Contextual Info: Apr. 1998 T IM 3 7 4 2 -4 5 S L -3 4 1 1. RF PERFORMANCE SPECIFICATIONS f Ta= 25 °C CHARACTERISTICS SYMBOL CONDITION MIN. TYP. MAX. UNIT Output Power at 1dB 46.0 46.5 PldB — dBm Compression Point VDS= 10V GldB — Power Gain at 1dB 10.0 f=3.3-3.6GHz —

Contextual Info: TOSHIBA July 1997 TIM1414-7-252 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C Ì CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT 37.0 38.0 — dBm

TRF1015

Contextual Info: TRF1015 CELLULAR RECEIVER FRONT-END ^ • • • • • • • • • - JUNE 1996 Low-Noise Amplifier LNA , Radio Frequency (RF) Mixer, and Voltage-Controlled Oscillator (VCO) High 1-dB Compression Mode

Contextual Info: Oct. 1998 PRELIMINARY TIM5964-4SL-031 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C Ì CHARACTERISTICS SYMBOL CONDITION MIN. TYP. MAX. UNIT Output Power at ldB PldB 35.5 36.5 dBm Compression Point Vds= 10V Power Gain at ldB GldB f-5.9-6.4GHz 8.0 9.0 dB IDS-1.1A

Contextual Info: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P05-AS FEATURES: •H IG H POWER P1dB=28dBm ■C H IP FORM IHIGH GAIN GldB= f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB

5252 F ic

Contextual Info: TOSHIBA July 1997 TIM1414-5-252 1. R F PERFO R M A N CE SP E C IFIC A T IO N S CHARACTERISTICS SYMBOL Output Power at ldB Compression Point P i dB Power Gain at ldB Compression Point GldB CONDITION MIN. TYP. MAX. UNIT 36.5 37.5 — dBm 4.5 5.5 — dB - 2.0

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-15L RF Performance Specifications Ta = 25°C Characteristic Symbol Output Power at 1 dB Compression Point P 1dB Power Gain at 1dB Compression Point G 1dB Condition Unit Min. Typ. Max. dBm 41.0 42.0 - dB 6.0 7.0 -

Contextual Info: TOSHIBA July 1997 TIM1414-15-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS O utput Power at ldB Compression Point Power Gain at ldB Compression Point D rain C urrent — ; Power Added Efficiency SYMBOL PldB GldB CONDITION VDS= 9V f= 13.75-14.5GHz Ids

dual-gate

Abstract: TGA8622 amplifier 1 2 ghz
Contextual Info: Texas Instruments TGA8622 Monolithic 2- to 20-GHz Dual-Gate Distributed Amplifier Features • 7.5-dB gain with greater than 30-dB gain control capability ■ 20-dBm output power at 1-dB gain compression ■ 7-dB noise figure ■ Input and output SWR less than 2.3:1 over

TGA8061

Contextual Info: Texas Instruments TGA8061 Monolithic 100-MHz to 3.5-GHz Low-Noise Amplifier Features • 3-dB bandwidth exceeds 5 octaves ■ 2.4-dB noise figure with low input and output SWR ■ 18.0-dB gain ■ 15-dBm output power at 1-dB gain compression ■ Operates from single 12-volt supply

947-75

Contextual Info: Oct. 1997 JS9P08-AS Draft 1 RF PERFORMANCE. SPECIFICATIONS CHARACTERISTICS O utput Powder at ldB Com pression Point Pow er Gain, at ldB Compression Point D rain C urrent Pow er Added Efficiency ( Ta= 2K°C 1 SYMBOL CONDITION MIN. TYP. M AX U N IT PldB 21.5 23.0 — dBm

zener diode c12

Abstract: ZENER SINGLE COLOR CODE c12 zener zener diode code color zener c12 MARKING band color code zener
Contextual Info: 1N4728G-1N4758G Pb 1W DO-41 Zener Voltage Regulators RoHS COMPLIANCE DO-41 Features — Zener Voltage Range 3.3. to 56Volts. — DO-41 Package JEDEC — Through-Hole Device Type Mounting — Hermetically Sealed Glass — Compression Bonded Construction — All External Suface Are Corrosion Resistant And

TML9052

Contextual Info: RF LIMITING AMPLIFIER MODEL TML9052 Available as: TML9052, 5 Pin TO-8 T5 TNL9052, 4 Pin Surface Mount (SM3) BXL9052, Connectorized Housing (H1) Features „ „ „ „ Absolute Maximum (No Damage) Ratings Frequency: 5 to 500 MHz Low Phase Shift per dB of Compression

EMP212

Contextual Info: EMP212-Q5 9.5 – 12.0 GHz Surface-Mounted PA UPDATED: 04/24/2008 FEATURES • • • • • 9.5 – 12.0 GHz Operating Frequency Range 30 dBm Output Power at 1dB Compression 14.0 dB Typical Small Signal Gain -40dBc OIMD3 @Each Tone Pout 19.5dBm 5X5 mm QFN Package

Contextual Info: EIC1010A-12 10.0-10.25 GHz 12-Watt Internally Matched Power FET ISSUED: 07/24/2007 Excelics FEATURES • • • • • • .024 EIC1010A-12 .827±.010 .669 10.0-10.25GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5dBm Output Power at 1dB Compression

Contextual Info: RFMA1214-0.5W-Q7 12.5– 14.5GHz High Gain Surface-Mounted PA UPDATED: 04-24-2008 FEATURES • • • • • 12.5 – 14.5GHz Operating Frequency Range 26.5dBm Output Power @1dB Compression 29.0dB Typical Power Gain @1dB Compression -41dBc OIMD3 @Pout 16.5dBm/tone

Contextual Info: EIC1314-12 13.75-14.50 GHz 12-Watt Internally Matched Power FET ISSUED 10/17/2008 FEATURES • • • • • • • 13.75– 14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression

RFMA2124-2W

Contextual Info: RFMA2124-2W-P3 21.2 – 23.6 GHz Power Amplifier MMIC UPDATED: 01/09/2007 FEATURES • • • • 21.2– 23.6GHz Operating Frequency Range 31.0dBm Output Power at 1dB Compression 22dB Typical Power Gain @ 1dB Gain Compression -39dBc Typical OIM3 @ each tone Pout 20dBm

Contextual Info: EIM1011-4 10.7 – 11.7GHz Multi-Stage Power Amplifier UPDATED: 01/15/2008 FEATURES • • • • • 10.7– 11.7GHz Operating Frequency Range 35.5dBm Output Power @1dB Compression 27.0 dB Typical Power Gain @1dB gain compression -45dBc Typical OIM3 @each tone Pout 22dBm

Contextual Info: EID1718A1-4 17.3–18.1 GHz 4-Watt Internally-Matched Power FET UPDATED: 07/12/2007 FEATURES • 17.3-18.1 GHz Bandwidth • Input/Output Impedance Matched to 50 Ohms • +36.0 dBm Output Power at 1dB Compression • 6.0 dB Power Gain at 1dB Compression • 25% Power Added Efficiency

Contextual Info: EID1616A1-12 16.0-16.5 GHz 12-Watt Internally Matched Power FET UPDATED 07/12/2007 FEATURES • 16.0-16.5 GHz Bandwidth • Input/Output Impedance Matched to 50 Ohms • +41.0 dBm Output Power at 1dB Compression • 5.0 dB Power Gain at 1dB Compression • 23% Power Added Efficiency