HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET
Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
Contextual Info: M A G IMA r^ T E C BUZ 900D BUZ 9 0 1 D NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SW ITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIG NED AND DIFFUSED
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buz905dbuz906d-100ma-160v+11-200vhitachi 2sj56 to-3 amp 200v 125w mosfet2sj56 2sk176mosfet cross reference2sk135 audio applicationlateral mosfet audio amplifierbuz901p2sj50 mosfethitachi mosfet power amplifier audio applicationbuz900pbuz900d
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SE012
Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2sa11862sa12152sa12162sa1262+162sa12942sa12952sa13032sa13862sa1386a2sa1488se012se090se140nse115ndiode2sc5487sta474a8050ese110nsla-7611
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Varistor RU
Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2sa11862sa12152sa12162sa1262+162sa12942sa12952sa13032sa13862sa1386a2sa1488varistor ruse110ntransistor2sc54872sa2003se090nhigh voltage transistorse090rbv-4062sc5586
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2SC5586
Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2sa11862sa12152sa12162sa1262+162sa12942sa12952sa13032sa13862sa1386a2sa14882sc5586transistor 2sc5586diode ru 3am2sa2003microwave oven diodesingle phase bridge rectifier ic with output 1a2sc5487rg-2a diodedual mosfet 606tfd312s-f
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em 234 stepper
Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
Contextual Info: Bulletin No O01ED0 Jun.,2001 SEMICONDUCTORS SHORT FORM CATALOG ICs TRANSISTORS THYRISTORS DIODES LIGHT EMITTING DIODES CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility
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o01ed0h1-o01ed0-0106030ndem 234 stepper2sc5586 equivalent+88002 1018 audio amplifier2sc55862sc5487voltage doubler bridgevaristor 560-22sa2003se125nse090
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smd code marking NEC
Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
Contextual Info: Power Management Devices Selection Guide > Power MOSFETs > ESD Protection Diodes > Regulators August 2008 www.am.necel.com/powermanagement TABLE OF CONTENTS Contents Low-Voltage Power By Part
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g18756eu3v0sg00smd code marking nectransistor smd code package sot89 52 10a38w smd transistor+7smd mark code 38wsmd 8pin ic marking code 251marking code e1 smd 5pin6pin dip smd mosfet marking code tmosfet smd code package sot89 52 10amarking code e2 p smd transistortransistor smd marking code mp
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2SC5586 equivalent
Abstract: 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent
Contextual Info: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements
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tm1641s-ltm1661b-ltm1661p-ltm1661s-l+16tm2541b-ltm2561b-ltm341m-ltm341s-ltm341s-rtm361m-l2sc5586 equivalent2sc55862sa1694 equivalent2sc5487transistor 2sc5586str83159em 234 stepperse090sk 5154s2sk3460 equivalent
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2SK1133
Abstract: 2SK113 2SJ166 marking G11
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1133 SWITCHING N-CHANNEL MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1133, N-channel vertical type MOSFET, is a switching 2.8 ±0.2 0.4 +0.1 –0.05 device which can be driven directly by the output of ICs having a
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2sk11332sk1132sj166marking g11 |
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toshiba laptop charging CIRCUIT diagram
Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
Contextual Info: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5
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bce0082htoshiba laptop charging circuit diagramtpc8123tph1400anh+6tpca8047-htpc 8127tpc8123 cross referencessm3j328rssm3j334rtpc8120
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LME49830
Abstract: DG8 Transistor Yageo LME49830TB MFR Yageo KobiConn fairchild dg5 Header, 4 pin, 0.1 Inch Spacing BD13916STU ct Potentiometer
Contextual Info: Bill of Materials for LME49830 EF125WT1 Reference Design 6/19/2008 Assembly Notes: - No special considerations. Reference Value Tolerance Type/Description Manufacturer Part Number CS1, CS2, CS3, CS4, CS10, CS11, CS9, CSN1 0.1 F 10% 250V, metalized polyester
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lme49830ef125wt1ecq-e2104kfeeu-fc2a471+14cd15ed200j03cd15ed300j03et01md1abe156mil161-0097-edg8 transistoryageolme49830tbmfr yageokobiconnfairchild dg5header, 4 pin, 0.1 inch spacingbd13916stuct potentiometer
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complementary MOSFET 2sk
Abstract: 2SK series transistor 2sk 2sk 2sj complementary mosfet 2sk to-92 2sk mosfet nec mosfet 2SK type UMOS-2 TO-220ISO
Contextual Info: Low voltage MOSFET Short reference guide Introduction As a leading supplier of PowerMOSFET devices, NEC Electronics offers an extensive range of over 500 different devices suitable for 0.25 µm UMOS-4 28M cell/cm2 to provide low on-resistance RDS(on), avalanche capability, low gate charge and lower leakage current.
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d17356ee1v0pf00complementary mosfet 2sk2sk seriestransistor 2sk+72sk 2sj complementary mosfet2sk to-922sk mosfetnec mosfet2sk typeumos-2to-220iso
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C2021M
Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)
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2sc2021ljne2sb8212sa937aln\2sc2021ln+162sb12762021m2sa937am2sb7372sd7862sa1137c2021mb1568mosfet ftr 032sc1b152sa1904mosfet ftr 03-e2sc2021e2sc1740 transistor2sk22952s0240
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2sk3625
Abstract: 2SK3566 equivalent 2SK3868 2SK3878 2sj618 NTPCA8008-H 2sk 2sj complementary mosfet TPC8107 2SK2611 MOSFET TOSHIBA 2SK2917
Contextual Info: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)
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2sk29632sk29622sj5082sj509+162sk36702sj3132sj3382sk20132sk21622sj3602sk36252sk3566 equivalent2sk38682sk38782sj618ntpca8008-h2sk 2sj complementary mosfettpc81072sk2611mosfet toshiba 2sk2917
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on line ups circuit diagrams
Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
Contextual Info: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm
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ep51ecph6605mch6613ech8609+16cph3424cph3427k3614fw343fw356fw360on line ups circuit diagrams2sk3850242mssfp packagek34923ln03mch3435cph5612three phase on line ups circuit diagramstn6r04
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2SK1058 MOSFET APPLICATION NOTES
Abstract: BD139 heat sink lm4702 OUTPUT STAGE INFORMATION 2sk1058 2SJ162 2SK1058 specification of 2SK1058 LM4702 BJT BD139 BJT small signal low power BD139 transistor 2sj162
Contextual Info: Introduction How To Choose A MOSFET This application note provides supporting design information regarding National Semiconductor’s newest offering of highperformance, ultra high-fidelity audio amplifier driver ICs. The LM4702 and its derivatives provide a highly reliable, fully
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lm4702an-16452sk1058 mosfet application notesbd139 heat sink+7lm4702 output stage information2sk1058 2sj1622sk1058specification of 2sk1058bjt bd139bjt small signal low power bd139transistor 2sj162
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2SC1740 transistor
Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Contextual Info: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN
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2sc2021ln2sb8212sb12762sc2021mln+16o-92lo-92ls2sb737v2sd7862sa11372sc17402sc1740 transistora1757b1130am2sd2061f2sd14662sc5083b1236amos-fet darlington2sc4721transistor 2sa1819
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TK12A10K3
Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
Contextual Info: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4
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tk12a10k3tk12a10ktk33a60vtpca*8065+6tk40e10k3ssm6k407tutpca*8064tk6a65d equivalenttpca*8036tk100g10n1
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MCR-2A
Abstract: 0.033f 5.5v AIC1628 AN97001 1N5819 1N5820 2SK1463 2SK940 CDR105 PFM design
Contextual Info: AN97-001 A Versatile Step-Up and Step-down Converter Design Using AIC1628 Ben Tai The AIC1628 step-up DC/DC Converter can achieve very high efficiency in VIN various applications, especially for +12V flash memory + 60mV 8 VREF 2 PFM OSCILLATOR 3 1.22V REFERENCE
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an97-001aic16281n58192sk1463+71n5820mcr-2a0.033f 5.5van970012sk940cdr105pfm design
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2SK940
Abstract: buss 2A 2SK1463 MCR-2A 1N5819 1N5820 AIC1628 CDR105 AN001 converter circuit dc to Dc 2V to 24V
Contextual Info: AN001 A Versatile Step-Up and Step-down Converter Design Using AIC1628 The AIC1628 step-up DC/DC Converter can achieve very high efficiency in VIN 8 CL VREF 2 PFM OSCILLATOR 3 1.22V REFERENCE VOLTAGE programming voltage and color LCD contrast bias control voltage applications; the efficiency of these
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an001aic16281n58192sk1463+61n58202sk940buss 2amcr-2acdr105converter circuit dc to dc 2v to 24v
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DIODE 1n5819
Abstract: 2SK940 1N5819 1N5820 2SK1463 AIC1628 CDR105
Contextual Info: AN96-SR01EN May 1996 A Versatile Step-Up and Step-down Converter Design Using AIC1628 Ben Tai The AIC1628 step-up DC/DC Converter can achieve VIN very high efficiency in various applications, especially for +12V flash memory programming voltage and VREF 2
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an96-sr01enaic16282sk14631n5820+4diode 1n58192sk9401n5819cdr105
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2SK3878 equivalent
Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Contextual Info: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)
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2sk29632sk29622sj5082sj509+152sk36702sj3132sj3382sk20132sk21622sj3602sk3878 equivalent2sk26112sk37592sk38782sk3869toshiba power mos fet 2sj 2sk2sk38682sk3567 equivalent2sk2718
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TPCA*8064
Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Contextual Info: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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bce0082btpca*8064tk12a10k3tpca8077+72sk3567 equivalentssm3j328tpca8077-htj11a10m3tk50e06k3atpca*8077tpca8028
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TPCA8077
Abstract: TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A
Contextual Info: 製品カタログ 2010-3 東芝半導体 製品カタログ MOSFET h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3
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bcj0082cbcj0082btpca8077tk12a10k3+8tk25e06k3tpca*8030tj11a10m3ssm6j501nutpca8057-h2sk4112tpc8217-htk50e06k3a
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TK12A10K3
Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
Contextual Info: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3
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bcj0082dbcj0082ctk12a10k3tk25e06k3+8tk50e06k3atk20e60utpca*8065tj11a10m3ssm6j501nutpca8077tj9a10m3tk8a10k3
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