COMPLEMENTARY MMBT3904 Search Results

mmbt3904lti

Contextual Info: RECTRON SEMICONDUCTOR MMBT3906LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * As complementary type,the NPN transistor MMBT3904LTI is Recommended * Epitaxial planar die construction SOT-23 MECHANICAL DATA * * * * * Case: Molded plastic

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION  FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906  ORDERING INFORMATION Ordering Number

MMBT3904G-AE3-R

Abstract: MMBT3904G-AL3-R MMBT3904L-AE3-R MMBT3904 MMBT3904-AE3-R MMBT3904-AL3-R MMBT3904G MMBT3904L MMBT3904L-AL3-R MMBT3906
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN SILICON TRANSISTOR GENERAL PURPOSE APPLIATION „ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 Lead-free: MMBT3904L Halogen-free: MMBT3904G

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES „ * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3904 „ ORDERING INFORMATION Ordering Number Normal

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES  * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3904  ORDERING INFORMATION Ordering Number Note:

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION „ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 „ ORDERING INFORMATION Ordering Number

Contextual Info: MMBT3906 PNP Silicon Elektronische Bauelemente General Purpose Transistor A suffix of "-C" specifies halogen & lead-free ●FEATURES . RoHS Compliant Product . Epitaxial Planar Die Construction . Complementary NPN Type Available A COLLECTOR MMBT3904 L 3

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION „ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 „ ORDERING INFORMATION Ordering Number

MMBT3906G-AE3-R

Abstract: VCE30V MMBT3904 MMBT3906 MMBT3906-AE3-R MMBT3906-AL3-R MMBT3906G MMBT3906L MMBT3906L-AE3-R marking 2A
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES „ * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3904 Lead-free: MMBT3906L Halogen-free: MMBT3906G

MMBT3904-AE3-R

Abstract: MMBT3904G MMBT3904 MMBT3904-AL3-R MMBT3904G-AE3-R MMBT3904G-AL3-R MMBT3904L MMBT3904L-AE3-R MMBT3904L-AL3-R MMBT3906
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN SILICON TRANSISTOR GENERAL PURPOSE APPLIATION „ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 Lead-free: MMBT3904L Halogen-free: MMBT3904G

MMBT3906 UTC

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES „ * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3904 „ ORDERING INFORMATION Ordering Number Lead Free

mmbt3904 complementary

Abstract: MMBT3904-AE3-R MMBT3904 MMBT3904-AL3-R MMBT3904L MMBT3904L-AE3-R MMBT3904L-AL3-R MMBT3906
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN SILICON TRANSISTOR GENERAL PURPOSE APPLIATION „ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 *Pb-free plating product number: MMBT3904L „

Contextual Info: SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter

MMBT3906FW

Abstract: 1N916 SOT-523 MARKING QA
Contextual Info: MMBT3906FW PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product FEATURES • · · SOT-523 Epitaxial Planar Die Construction A Complementary NPN Type Available MMBT3904FW L Ideal for Medium Power Amplification and Switching

1N916

Abstract: MMBT3904 MMBT3906
Contextual Info: General Purpose Transistor PNP COMCHIP www.comchiptech.com MMBT3906 PNP Silicon Type Features Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT3904) Ideal for Medium Power Amplification and Switching SOT-23 .119 (3.0) .110 (2.8) .020 (0.5)

MMBT3904FW

Abstract: 1N916
Contextual Info: MMBT3904FW NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product FEATURES • · · SOT-523 A Epitaxial Planar Die Construction L Complementary PNP Type Available MMBT3906FW Ideal for Medium Power Amplification and Switching

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors MMBT3904T TRANSISTOR NPN FEATURES  Complementary to MMBT3906T  Small Package SOT–523 MARKING:1N MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

MMBT3904LT1

Abstract: MMBT3906LT1 MMBT3906LT1 semtech
Contextual Info: MMBT3906LT1 PNP Silicon General Purpose Transistor for switching and amplifier applications. As complementary types the NPN transistors MMBT3904LT1 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta=25 oC Symbol Value Unit Collector Base Voltage

MMBT3904LT1

Abstract: MMBT3906LT1
Contextual Info: MMBT3906LT1 PNP Silicon General Purpose Transistor for switching and amplifier applications. As complementary types the NPN transistors MMBT3904LT1 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta=25 oC Symbol Value Unit Collector Base Voltage

1AM marking transistor

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT3904 Plastic-Encapsulate Transistors TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE

Contextual Info: DONGGUAN FORWARD SEMICONDUCTOR CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES ● As complementary type, the NPN transistor MMBT3904LT1 is Recommended ● Epitaxial planar die construction MAXIMUM RATINGS* TA=25 unless otherwise noted

MMBT3906

Abstract: MMBT3906 SOT-23 MMBT3906-2A MMBT3906 2A MMBT3904 2A sot-23 MMBT3906 galaxy mmbt3906 2a sot-23
Contextual Info: BL Galaxy Electrical Production specification PNP General Purpose Transistor FEATURES z Epitaxial planar die construction. z Complementary NPN type available MMBT3906 Pb Lead-free MMBT3904 . z Low Current (Max:-100mA). z Low Voltage(Max:-40v). APPLICATIONS

1am3

Abstract: transistor 1am3 k1n r1 K1N TRANSISTOR sot-23 marking 1AM3 mmbt3904 complementary MMBT3906 L R1A SURFACE MOUNT TRANSISTOR MMBT3904 MMBT3906
Contextual Info: MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching SOT-23 -H : h ~ A TO P VIEW Mechanical Data_ • •