COMMON EMITTER AMPLIFIER Search Results
COMMON EMITTER AMPLIFIER Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| LM759H/B |
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LM759 - Power Operational Amplifier |
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| HA2-2541-2 |
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HA2-2541 - Operational Amplifier |
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| 11C90DM |
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11C90 - Prescaler, ECL Series |
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| LM759CH |
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LM759 - Power Operational Amplifier, MBCY8 |
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| 100324/VYA |
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100324 - TTL to ECL Translator, 6 Func, Complementary Output, ECL - Dual marked (5962-9153001VYA) |
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COMMON EMITTER AMPLIFIER Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: VAM 120 120 Watts, 27 Volts, Class AB Defcom 100 - 150 MHz GENERAL DESCRIPTION CASE OUTLINE The VAM 120 is a COMMON EMITTER device designed to operae in a collector modulated VHF power amplifier. It is a common emitter device, optimized for use in the 100-150 MHz range. |
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d 317 transistor
Abstract: LTE21015R common emitter amplifier b 342 d transistor
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LTE21015R LTE21015R ASI10473 d 317 transistor common emitter amplifier b 342 d transistor | |
BLV59Contextual Info: ASI BLV59 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV59 is a Common Emitter Device Designed for Class A and AB Amplifier Applications in TV Band IV-V Transmitters. FEATURES INCLUDE: • Gold Metalization • Intrnal Matching • Emitter Ballasting |
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BLV59 BLV59 | |
Common emitter amplifier
Abstract: "RF Power Transistor" LKE21015R LKE21015T
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LKE21015T LKE21015T LKE21015R Common emitter amplifier "RF Power Transistor" LKE21015R | |
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Contextual Info: m 2N3632 \ \ NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N3632 is Designed for Class A,B>C Amplifier,Oscillator and Driver Applications Covering 130 TO 400MHz. PACKAGE STYLE T O -60 FEATURES INCLUDE: • Emitter Ballasted • Common Emitter Package |
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2N3632 2N3632 400MHz. | |
sd1490Contextual Info: SD1490 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1490 is a Common Emitter Device Designed for Class A and AB Amplifier Applications in Television Band IV & V Transmitters. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • Internal Matching |
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SD1490 SD1490 -16dB | |
BLV99Contextual Info: BLV99 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV99 is a Common Emitter Device Designed for Amplifier Applications up to 860 MHz. FEATURES INCLUDE: PACKAGE STYLE 205 4L STUD • Gold Metallization • Emitter Ballasting • High Gain MAXIMUM RATINGS |
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BLV99 BLV99 | |
MMBTH24
Abstract: MPSH11 MPSH24
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MPSH24/MMBTH24 100mA 300MHz, MPSH11 OT-23 MMBTH24 MPSH24 | |
BFY88
Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
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i200Rb D0DS332 ft-11 569-GS 000s154 hal66 if-11 BFY88 Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288 | |
2N3632Contextual Info: 2N3632 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N3632 is Designed for Class A,B,C Amplifier, Oscillator and Driver Applications Covering 130 to 400 MHz. PACKAGE STYLE TO- 60 FEATURES INCLUDE: • Emitter Ballasted • Common Emitter Package MAXIMUM RATINGS |
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2N3632 2N3632 | |
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Contextual Info: /IT SGS-THOMSON SD4590 RF & MICROWAVE TR AN SISTO RS 800-960 MHz CELLULAR BASE STATION . . . . . . . GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT/OUTPUT MATCHING COMMON EMITTER CONFIGURATION DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY |
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SD4590 SD4590 | |
MSC82100Contextual Info: MSC82100 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY ∞:1 @ RATED CONDITIONS ft 1.6 GHz TYPICAL NOISE FIGURE 15.5 dB @ 2 GHz POUT = 27 dBm MIN. @ 1.0 GHz |
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MSC82100 MSC82100 | |
MSC80185
Abstract: S027
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MSC80185 MSC80185 S027 | |
80196
Abstract: MSC80196
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MSC80196 MSC80196 80196 | |
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MSC80185
Abstract: MSC80186 S027
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MSC80186 MSC80185 MSC80186 S027 | |
20AWG
Abstract: M208 SD4590 R45X
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SD4590 -28dB STD-883D SD4590 20AWG M208 R45X | |
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Contextual Info: U fi SGS-THOMSON IlLiêTMOtêi MSC80185 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . • • . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 20:1 @ RATED CONDITIONS . ft 3.2 GHz TYPICAL . NOISE FIGURE 12.0 dB @ 2 GHz |
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MSC80185 MSC80185 2-030J J135023F | |
SD4590
Abstract: atcb M208 20AWG R45X 2x200
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SD4590 -28dB STD-883D SD4590 atcb M208 20AWG R45X 2x200 | |
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Contextual Info: N AMER PHILIPS/DISCRETE ObE D bbS3T31 0D14T07 T • LAE4002S _ r-3 i-3ii MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for common-emitter class-A linear power amplifiers up to 4 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich metallization ensure |
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bbS3T31 0D14T07 LAE4002S | |
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Contextual Info: N AMER PHILIPS/DISCRETE bb53T31 0014^47 0 QbE D MAINTENANCE TYPE LKE27010R V V T -33-O jT MICROWAVE LINEAR POWER TRANSISTOR NPN transistor for use in a common-emitter class-A linear power amplifier up to 3,3 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry and gold metallization |
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bb53T31 LKE27010R -33-O 150S2) | |
21-030-JContextual Info: Sfï SGS-1H0MS0N MSC80196 \u RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 15:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.5 dB @ 2 GHz P out = 30.0 dBm MIN. |
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MSC80196 MSC80196 S96184 015-H---NO. 21-030-J 21-030-J | |
MPSH10 fairchild transistor
Abstract: MMBTH10 Spice Model MPS-H10 MMBTH10 MPSH10 TRANSISTOR C 3223 1358p
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MPSH10 MMBTH10 OT-23 MPSH10 MPSH10 fairchild transistor MMBTH10 Spice Model MPS-H10 MMBTH10 TRANSISTOR C 3223 1358p | |
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Contextual Info: i_L ObE » N AMER PHILIPS/DISCRETE l bb53^31 0015001 LV2327E40R 3 i- o * ? r - MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear wideband power amplifier from 2,3 to 2,7 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide |
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LV2327E40R bb53131 7Z88736 7Z88737 | |
dsb 3305
Abstract: ic-110 LUE2003S LUE2009S
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LUE2003S LUE2009S 711Gfl2b 004fc FO-163 LUE2009S dsb 3305 ic-110 | |