COMMON EMITTER AMPLIFIER Search Results

vp 3082

Abstract: CA3081 CA3082
Contextual Info: CA3081, CA3082 M A ßE»» General Purpose High Current NPN Transistor Arrays November 1996 Features D escription • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter

Contextual Info: VAM 120 120 Watts, 27 Volts, Class AB Defcom 100 - 150 MHz GENERAL DESCRIPTION CASE OUTLINE The VAM 120 is a COMMON EMITTER device designed to operae in a collector modulated VHF power amplifier. It is a common emitter device, optimized for use in the 100-150 MHz range.

diode BY239

Abstract: bd239 equivalent Transistor Equivalent list MLC446 copper permittivity 43081 BD239 BY239 LXE15450X SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LXE15450X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS W R amplifier. • Interdigitated common-emitter

LKE21004R

Abstract: n 431 transistor
Contextual Info: LKE21004R NPN SILICON MICROWAVE POWER TRANSISTOR DESCRIPTION: The ASI LKE21004R is Designed for Class A, Common Emitter, linear power amplifier Applications up to 2.1 GHz. PACKAGE STYLE .250 2L FLG FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting

h a 431 transistor

Abstract: LKE21050T n 431 transistor transistor F 0552 b 342 d transistor
Contextual Info: LKE21050T NPN SILICON MICROWAVE POWER TRANSISTOR DESCRIPTION: The ASI LKE21050T is Designed for Class A, Common Emitter, linear power amplifier Applications up to 2.1 GHz. PACKAGE STYLE .250 2L FLG FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting

d 317 transistor

Abstract: LTE21015R common emitter amplifier b 342 d transistor
Contextual Info: LTE21015R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The LTE21015R is Designed for Class A Common Emitter Amplifier Applications to 2.3 GHz. FEATURES INCLUDE: PACKAGE STYLE .250 2L FLG • Replacement for Philips LTE21015R • Gold Metalization • Emitter Ballasting

TVU100A

Abstract: TVU150
Contextual Info: TVU150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The TVU150 is a Common Emitter Device Designed for Class A and AB Amplifier Applications in Band IV-V TV Transmitters. FEATURES INCLUDE : • Gold Metalization • Internal Matching • Emitter Ballasting

common emitter amplifier

Abstract: b 342 d transistor
Contextual Info: LV2024E45R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The LV2024E45R is Designed for Class A Common Emitter Amplifier Applications to 2.3 GHz. FEATURES INCLUDE: • Replacement for Philips LV2024E45R • Gold Metalization • Emitter Ballasting PACKAGE STYLE .250 2L FLG

SD1169

Contextual Info: SD1169 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1169 is a Common Emitter Device Designed for Class C Amplifier Applications in HF Land Mobile Radios. PACKAGE STYLE .500 4L STUD FEATURES INCLUDE: • Aluminum Metalization • Emitter Ballasting

BLV59

Contextual Info: ASI BLV59 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV59 is a Common Emitter Device Designed for Class A and AB Amplifier Applications in TV Band IV-V Transmitters. FEATURES INCLUDE: • Gold Metalization • Intrnal Matching • Emitter Ballasting

Common emitter amplifier

Abstract: "RF Power Transistor" LKE21015R LKE21015T
Contextual Info: LKE21015T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The LKE21015T is Designed for Class A Common Emitter Amplifier Applications to 2.1 GHz. PACKAGE STYLE .250 2L FLG FEATURES INCLUDE: • Replacement for Philips LKE21015R • Gold Metalization • Diffused Emitter Ballasting

VTV-300

Abstract: VTV300
Contextual Info: VTV300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VTV300 is Designed for Class A Amplifier Applications up to 225 MHz. FEATURES INCLUDE: PACKAGE STYLE 500- 6LFLG • Common Emitter • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS IC 14 A

Contextual Info: m 2N3632 \ \ NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N3632 is Designed for Class A,B>C Amplifier,Oscillator and Driver Applications Covering 130 TO 400MHz. PACKAGE STYLE T O -60 FEATURES INCLUDE: • Emitter Ballasted • Common Emitter Package

CE 65 M

Contextual Info: 2N3632 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N3632 is Designed for Class A,B,C Amplifier,Oscillator and Driver Applications Covering 130 TO 400MHz. FEATURES INCLUDE: • Emitter Ballasted • Common Emitter Package PACKAGE STYLE TO- 60 MINIMUM

PT3642

Abstract: amplifier class c
Contextual Info: PT3642 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT3642 is Designed for Class A,B,C Amplifier, Oscillator and Driver Applications Covering 130 to 400MHz. PACKAGE STYLE TO- 60 FEATURES INCLUDE: • Emitter Ballasted • Common Emitter Package MAXIMUM RATINGS

2N5070

Abstract: 2N507
Contextual Info: 2N5070 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N5070 is Designed for High PACKAGE STYLE TO- 60 Power Linear Amplifier Application in the 2.0 to 75 MHz Range. FEATURES INCLUDE: • Emitter Ballasted • Common Emitter Package MAXIMUM RATINGS IC

TPV394

Contextual Info: TPV394 NPN RF POWER TRANSISTOR DESCRIPTION: The ASI TPV394 is a Common Emitter Device Designed for Class A High Linearity Amplifier Applications in TV Band II-III Transmitters. PACKAGE STYLE 280 4L STUD FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting

sd1490

Contextual Info: SD1490 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1490 is a Common Emitter Device Designed for Class A and AB Amplifier Applications in Television Band IV & V Transmitters. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • Internal Matching

VTV075

Contextual Info: VTV075 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VTV075 is Designed for Class A Amplifier Applications up to 225 MHz. PACKAGE STYLE 500- 6LFLG FEATURES INCLUDE: • Common Emitter • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS IC 4.0 A

Contextual Info: TVU100AX NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU100AX is a Common Emitter Device Designed for Class A and AB Amplifier Applications in TV Band IV-V Transmitters. FEATURES INCLUDE: • Gold Metalization • Input Matched • Emitter Ballasting

BLV99

Contextual Info: BLV99 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV99 is a Common Emitter Device Designed for Amplifier Applications up to 860 MHz. FEATURES INCLUDE: PACKAGE STYLE 205 4L STUD • Gold Metallization • Emitter Ballasting • High Gain MAXIMUM RATINGS

PH0810-15

Contextual Info: PH0810-15 Wireless Power Transistor 15W, 850-960MHz, 26V Features • Designed for linear amplifier applications • Class AB: -30 dBc typ. 3rd IMD at 15 W PEP • Common emitter configuration • Internal input impedance matching • Diffused emitter ballasting

MMBTH24

Abstract: MPSH11 MPSH24
Contextual Info: MPSH24/MMBTH24 MPSH24/MMBTH24 NPN General Purpose Amplifier 3 • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator

BFY88

Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
Contextual Info: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration