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    COMMON EMITTER AMPLIFIER Search Results

    COMMON EMITTER AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LM759H/B
    Rochester Electronics LLC LM759 - Power Operational Amplifier PDF Buy
    HA2-2541-2
    Rochester Electronics LLC HA2-2541 - Operational Amplifier PDF Buy
    11C90DM
    Rochester Electronics LLC 11C90 - Prescaler, ECL Series PDF Buy
    LM759CH
    Rochester Electronics LLC LM759 - Power Operational Amplifier, MBCY8 PDF Buy
    100324/VYA
    Rochester Electronics LLC 100324 - TTL to ECL Translator, 6 Func, Complementary Output, ECL - Dual marked (5962-9153001VYA) PDF Buy

    COMMON EMITTER AMPLIFIER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    vp 3082

    Abstract: CA3081 CA3082
    Contextual Info: CA3081, CA3082 M A ßE»» General Purpose High Current NPN Transistor Arrays November 1996 Features D escription • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter


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    CA3081, CA3082 CA3081 CA3082 100mA) vp 3082 PDF

    Contextual Info: VAM 120 120 Watts, 27 Volts, Class AB Defcom 100 - 150 MHz GENERAL DESCRIPTION CASE OUTLINE The VAM 120 is a COMMON EMITTER device designed to operae in a collector modulated VHF power amplifier. It is a common emitter device, optimized for use in the 100-150 MHz range.


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    diode BY239

    Abstract: bd239 equivalent Transistor Equivalent list MLC446 copper permittivity 43081 BD239 BY239 LXE15450X SC15
    Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LXE15450X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS W R amplifier. • Interdigitated common-emitter


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    LXE15450X MLC446 OT439A. diode BY239 bd239 equivalent Transistor Equivalent list MLC446 copper permittivity 43081 BD239 BY239 LXE15450X SC15 PDF

    LKE21004R

    Abstract: n 431 transistor
    Contextual Info: LKE21004R NPN SILICON MICROWAVE POWER TRANSISTOR DESCRIPTION: The ASI LKE21004R is Designed for Class A, Common Emitter, linear power amplifier Applications up to 2.1 GHz. PACKAGE STYLE .250 2L FLG FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting


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    LKE21004R LKE21004R n 431 transistor PDF

    h a 431 transistor

    Abstract: LKE21050T n 431 transistor transistor F 0552 b 342 d transistor
    Contextual Info: LKE21050T NPN SILICON MICROWAVE POWER TRANSISTOR DESCRIPTION: The ASI LKE21050T is Designed for Class A, Common Emitter, linear power amplifier Applications up to 2.1 GHz. PACKAGE STYLE .250 2L FLG FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting


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    LKE21050T LKE21050T h a 431 transistor n 431 transistor transistor F 0552 b 342 d transistor PDF

    d 317 transistor

    Abstract: LTE21015R common emitter amplifier b 342 d transistor
    Contextual Info: LTE21015R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The LTE21015R is Designed for Class A Common Emitter Amplifier Applications to 2.3 GHz. FEATURES INCLUDE: PACKAGE STYLE .250 2L FLG • Replacement for Philips LTE21015R • Gold Metalization • Emitter Ballasting


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    LTE21015R LTE21015R ASI10473 d 317 transistor common emitter amplifier b 342 d transistor PDF

    TVU100A

    Abstract: TVU150
    Contextual Info: TVU150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The TVU150 is a Common Emitter Device Designed for Class A and AB Amplifier Applications in Band IV-V TV Transmitters. FEATURES INCLUDE : • Gold Metalization • Internal Matching • Emitter Ballasting


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    TVU150 TVU150 TVU100A TVU100A PDF

    common emitter amplifier

    Abstract: b 342 d transistor
    Contextual Info: LV2024E45R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The LV2024E45R is Designed for Class A Common Emitter Amplifier Applications to 2.3 GHz. FEATURES INCLUDE: • Replacement for Philips LV2024E45R • Gold Metalization • Emitter Ballasting PACKAGE STYLE .250 2L FLG


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    LV2024E45R LV2024E45R ASI10472 common emitter amplifier b 342 d transistor PDF

    SD1169

    Contextual Info: SD1169 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1169 is a Common Emitter Device Designed for Class C Amplifier Applications in HF Land Mobile Radios. PACKAGE STYLE .500 4L STUD FEATURES INCLUDE: • Aluminum Metalization • Emitter Ballasting


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    SD1169 SD1169 100mA PDF

    BLV59

    Contextual Info: ASI BLV59 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV59 is a Common Emitter Device Designed for Class A and AB Amplifier Applications in TV Band IV-V Transmitters. FEATURES INCLUDE: • Gold Metalization • Intrnal Matching • Emitter Ballasting


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    BLV59 BLV59 PDF

    Common emitter amplifier

    Abstract: "RF Power Transistor" LKE21015R LKE21015T
    Contextual Info: LKE21015T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The LKE21015T is Designed for Class A Common Emitter Amplifier Applications to 2.1 GHz. PACKAGE STYLE .250 2L FLG FEATURES INCLUDE: • Replacement for Philips LKE21015R • Gold Metalization • Diffused Emitter Ballasting


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    LKE21015T LKE21015T LKE21015R Common emitter amplifier "RF Power Transistor" LKE21015R PDF

    VTV-300

    Abstract: VTV300
    Contextual Info: VTV300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VTV300 is Designed for Class A Amplifier Applications up to 225 MHz. FEATURES INCLUDE: PACKAGE STYLE 500- 6LFLG • Common Emitter • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS IC 14 A


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    VTV300 VTV300 VTV-300 PDF

    Contextual Info: m 2N3632 \ \ NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N3632 is Designed for Class A,B>C Amplifier,Oscillator and Driver Applications Covering 130 TO 400MHz. PACKAGE STYLE T O -60 FEATURES INCLUDE: • Emitter Ballasted • Common Emitter Package


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    2N3632 2N3632 400MHz. PDF

    CE 65 M

    Contextual Info: 2N3632 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N3632 is Designed for Class A,B,C Amplifier,Oscillator and Driver Applications Covering 130 TO 400MHz. FEATURES INCLUDE: • Emitter Ballasted • Common Emitter Package PACKAGE STYLE TO- 60 MINIMUM


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    2N3632 400MHz. CE 65 M PDF

    PT3642

    Abstract: amplifier class c
    Contextual Info: PT3642 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT3642 is Designed for Class A,B,C Amplifier, Oscillator and Driver Applications Covering 130 to 400MHz. PACKAGE STYLE TO- 60 FEATURES INCLUDE: • Emitter Ballasted • Common Emitter Package MAXIMUM RATINGS


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    PT3642 PT3642 400MHz. amplifier class c PDF

    2N5070

    Abstract: 2N507
    Contextual Info: 2N5070 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N5070 is Designed for High PACKAGE STYLE TO- 60 Power Linear Amplifier Application in the 2.0 to 75 MHz Range. FEATURES INCLUDE: • Emitter Ballasted • Common Emitter Package MAXIMUM RATINGS IC


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    2N5070 2N5070 2N507 PDF

    TPV394

    Contextual Info: TPV394 NPN RF POWER TRANSISTOR DESCRIPTION: The ASI TPV394 is a Common Emitter Device Designed for Class A High Linearity Amplifier Applications in TV Band II-III Transmitters. PACKAGE STYLE 280 4L STUD FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting


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    TPV394 TPV394 PDF

    sd1490

    Contextual Info: SD1490 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1490 is a Common Emitter Device Designed for Class A and AB Amplifier Applications in Television Band IV & V Transmitters. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • Internal Matching


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    SD1490 SD1490 -16dB PDF

    VTV075

    Contextual Info: VTV075 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VTV075 is Designed for Class A Amplifier Applications up to 225 MHz. PACKAGE STYLE 500- 6LFLG FEATURES INCLUDE: • Common Emitter • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS IC 4.0 A


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    VTV075 VTV075 PDF

    Contextual Info: TVU100AX NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU100AX is a Common Emitter Device Designed for Class A and AB Amplifier Applications in TV Band IV-V Transmitters. FEATURES INCLUDE: • Gold Metalization • Input Matched • Emitter Ballasting


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    TVU100AX TVU100AX PDF

    BLV99

    Contextual Info: BLV99 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV99 is a Common Emitter Device Designed for Amplifier Applications up to 860 MHz. FEATURES INCLUDE: PACKAGE STYLE 205 4L STUD • Gold Metallization • Emitter Ballasting • High Gain MAXIMUM RATINGS


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    BLV99 BLV99 PDF

    PH0810-15

    Contextual Info: PH0810-15 Wireless Power Transistor 15W, 850-960MHz, 26V Features • Designed for linear amplifier applications • Class AB: -30 dBc typ. 3rd IMD at 15 W PEP • Common emitter configuration • Internal input impedance matching • Diffused emitter ballasting


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    PH0810-15 850-960MHz, PH0810-15 PDF

    MMBTH24

    Abstract: MPSH11 MPSH24
    Contextual Info: MPSH24/MMBTH24 MPSH24/MMBTH24 NPN General Purpose Amplifier 3 • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator


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    MPSH24/MMBTH24 100mA 300MHz, MPSH11 OT-23 MMBTH24 MPSH24 PDF

    BFY88

    Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
    Contextual Info: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration


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    i200Rb D0DS332 ft-11 569-GS 000s154 hal66 if-11 BFY88 Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288 PDF