COMMON EMITTER AMPLIFIER Search Results

Contextual Info: VAM 120 120 Watts, 27 Volts, Class AB Defcom 100 - 150 MHz GENERAL DESCRIPTION CASE OUTLINE The VAM 120 is a COMMON EMITTER device designed to operae in a collector modulated VHF power amplifier. It is a common emitter device, optimized for use in the 100-150 MHz range.

BLV59

Contextual Info: ASI BLV59 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV59 is a Common Emitter Device Designed for Class A and AB Amplifier Applications in TV Band IV-V Transmitters. FEATURES INCLUDE: • Gold Metalization • Intrnal Matching • Emitter Ballasting

Contextual Info: m 2N3632 \ \ NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N3632 is Designed for Class A,B>C Amplifier,Oscillator and Driver Applications Covering 130 TO 400MHz. PACKAGE STYLE T O -60 FEATURES INCLUDE: • Emitter Ballasted • Common Emitter Package

sd1490

Contextual Info: SD1490 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1490 is a Common Emitter Device Designed for Class A and AB Amplifier Applications in Television Band IV & V Transmitters. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • Internal Matching

MSC82100

Contextual Info: MSC82100 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY ∞:1 @ RATED CONDITIONS ft 1.6 GHz TYPICAL NOISE FIGURE 15.5 dB @ 2 GHz POUT = 27 dBm MIN. @ 1.0 GHz

MSC80185

Abstract: S027
Contextual Info: MSC80185 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 20:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.0 dB @ 2 GHz POUT = 28 dBm MIN. @ 2.0 GHz

80196

Abstract: MSC80196
Contextual Info: MSC80196 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 15:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.5 dB @ 2 GHz POUT = 30.0 dBm MIN. .250 2LFL S011

MSC80185

Abstract: MSC80186 S027
Contextual Info: MSC80186 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 15:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.5 dB @ 2 GHz POUT = 30.0 dBm MIN. .230 4L STUD S027

SD4590

Abstract: atcb M208 20AWG R45X 2x200
Contextual Info: SD4590 RF POWER TRANSISTORS 800-960 MHz CELLULAR BASE STATION ν ν ν ν ν ν ν ν GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT/OUTPUT MATCHING COMMON EMITTER CONFIGURATION DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY 26 VOLT,

Contextual Info: i_L ObE » N AMER PHILIPS/DISCRETE l bb53^31 0015001 LV2327E40R 3 i- o * ? r - MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear wideband power amplifier from 2,3 to 2,7 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide

TF135

Abstract: bf308
Contextual Info: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.

MPSH10 s parameters

Contextual Info: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency

sealectro matrix

Abstract: sealectro
Contextual Info: SGS-1H0MS0N 5 1 . MSC80195 IH[ RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 20:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.0 dB @ 2 GHz P o u t = 28 dBm MIN. @ 2.0 GHz

Contextual Info: N AMER PHILIPS/DISCRETE ObE D • bb 5 3 T 31 Q O m ^ b ? b ■ J V LTE42005S LTE42008R MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4,2 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich

MRF240

Abstract: BUY60 MRF240 equivalent
Contextual Info: MOTOROLA Order this document by MRF240/D SEMICONDUCTOR TECHNICAL DATA MRF240 . . . designed for 13.6 volt VHF large–signal class C and class AB linear power amplifier applications in commercial and industrial equipment. • High Common Emitter Power Gain

MRF1946

Abstract: MRF1946A MOTOROLA 381 equivalent MRF1946 equivalent J-101-15
Contextual Info: MOTOROLA Order this document by MRF1946/D SEMICONDUCTOR TECHNICAL DATA MRF1946 MRF1946A . . . designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment. • High Common Emitter Power Gain • Specified 12.5 V, 175 MHz Performance

transistor npn 100w amplifier

Abstract: 2SC3660 rf power amplifier 100w 470-860 rf amplifier 100w npn 28v 100w amplifier
Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2SC3660 Silicon NPN high power UHF transistor 2SC3660 is designed for Class AB Push­ Pull linear power amplifier applications in a common emitter configuration specifically in operating TV transmitters . Output Power: Frequency Range:

PH1516-100

Contextual Info: an AMP comDanv Wireless Bipolar 1450 - 1550 MHz Power Transistor, 1 OOW PH1516-100 Features - _~. - - Designed for Linear Amplifier Applications Class AB: -32 dBc Typ 3rd IMD at 100 Watts PEP Common Emitter Configuration Internal Input Impedance Matching

MRF340

Abstract: transistor mrf340
Contextual Info: MRF340 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF340 is Designed for VHF Radios that use Collector Modulation in the Driver/Final Amplifiers to Produce an Amplitude Modulated Signal. PACKAGE STYLE TO-220AB COMMON EMITTER FEATURES INCLUDE: •

HF8-28S

Abstract: ASI10736
Contextual Info: HF8-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF8-28S is a common Emitter transistor, designed for broadband amplifier operations in military, commercial and amateur communication equipment. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: C B

VLB40-12S

Abstract: vhf fm amplifier ASI10735 TRansistor A 940
Contextual Info: VLB40-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VLB40-12S is a common Emitter transistor, designed for VHF FM amplifier operations in military, commercial and amateur communication equipment. PACKAGE STYLE .380 4L STUD A .112x45° FEATURES:

sps 1951 transistor

Abstract: mrf857s MOTOROLA ELECTROLYTIC CAPACITOR transistor motorola 359 mrf857
Contextual Info: MOTOROLA Order this document by MRF857/D SEMICONDUCTOR TECHNICAL DATA MRF857S Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. CLASS A

MOTOROLA ELECTROLYTIC CAPACITOR

Abstract: motorola L6 transistor NPN 30 watt BD136 MRF897R TL11 250UF 10 uF 35 volt capacitor
Contextual Info: MOTOROLA Order this document by MRF897R/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF897R Designed for 24 Volt UHF large–signal, common emitter, class–AB linear amplifier applications in industrial and commercial FM/AM equipment operating

GX-0300-55-22

Abstract: UT-85-M17 motorola L6 OMNI SPECTRA BD136 MRF897 TL11 motorola rf Power Transistor 250UF 35 W 960 MHz RF POWER TRANSISTOR NPN
Contextual Info: MOTOROLA Order this document by MRF897/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF897 Designed for 24 Volt UHF large–signal, common emitter, class–AB linear amplifier applications in industrial and commercial FM/AM equipment operating