COMMON EMITTER AMPLIFIER Search Results

Contextual Info: VAM 120 120 Watts, 27 Volts, Class AB Defcom 100 - 150 MHz GENERAL DESCRIPTION CASE OUTLINE The VAM 120 is a COMMON EMITTER device designed to operae in a collector modulated VHF power amplifier. It is a common emitter device, optimized for use in the 100-150 MHz range.

d 317 transistor

Abstract: LTE21015R common emitter amplifier b 342 d transistor
Contextual Info: LTE21015R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The LTE21015R is Designed for Class A Common Emitter Amplifier Applications to 2.3 GHz. FEATURES INCLUDE: PACKAGE STYLE .250 2L FLG • Replacement for Philips LTE21015R • Gold Metalization • Emitter Ballasting

BLV59

Contextual Info: ASI BLV59 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV59 is a Common Emitter Device Designed for Class A and AB Amplifier Applications in TV Band IV-V Transmitters. FEATURES INCLUDE: • Gold Metalization • Intrnal Matching • Emitter Ballasting

Common emitter amplifier

Abstract: "RF Power Transistor" LKE21015R LKE21015T
Contextual Info: LKE21015T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The LKE21015T is Designed for Class A Common Emitter Amplifier Applications to 2.1 GHz. PACKAGE STYLE .250 2L FLG FEATURES INCLUDE: • Replacement for Philips LKE21015R • Gold Metalization • Diffused Emitter Ballasting

Contextual Info: m 2N3632 \ \ NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N3632 is Designed for Class A,B>C Amplifier,Oscillator and Driver Applications Covering 130 TO 400MHz. PACKAGE STYLE T O -60 FEATURES INCLUDE: • Emitter Ballasted • Common Emitter Package

sd1490

Contextual Info: SD1490 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1490 is a Common Emitter Device Designed for Class A and AB Amplifier Applications in Television Band IV & V Transmitters. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • Internal Matching

BLV99

Contextual Info: BLV99 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV99 is a Common Emitter Device Designed for Amplifier Applications up to 860 MHz. FEATURES INCLUDE: PACKAGE STYLE 205 4L STUD • Gold Metallization • Emitter Ballasting • High Gain MAXIMUM RATINGS

MMBTH24

Abstract: MPSH11 MPSH24
Contextual Info: MPSH24/MMBTH24 MPSH24/MMBTH24 NPN General Purpose Amplifier 3 • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator

BFY88

Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
Contextual Info: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration

2N3632

Contextual Info: 2N3632 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N3632 is Designed for Class A,B,C Amplifier, Oscillator and Driver Applications Covering 130 to 400 MHz. PACKAGE STYLE TO- 60 FEATURES INCLUDE: • Emitter Ballasted • Common Emitter Package MAXIMUM RATINGS

Contextual Info: /IT SGS-THOMSON SD4590 RF & MICROWAVE TR AN SISTO RS 800-960 MHz CELLULAR BASE STATION . . . . . . . GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT/OUTPUT MATCHING COMMON EMITTER CONFIGURATION DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY

MSC82100

Contextual Info: MSC82100 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY ∞:1 @ RATED CONDITIONS ft 1.6 GHz TYPICAL NOISE FIGURE 15.5 dB @ 2 GHz POUT = 27 dBm MIN. @ 1.0 GHz

MSC80185

Abstract: S027
Contextual Info: MSC80185 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 20:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.0 dB @ 2 GHz POUT = 28 dBm MIN. @ 2.0 GHz

80196

Abstract: MSC80196
Contextual Info: MSC80196 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 15:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.5 dB @ 2 GHz POUT = 30.0 dBm MIN. .250 2LFL S011

MSC80185

Abstract: MSC80186 S027
Contextual Info: MSC80186 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 15:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.5 dB @ 2 GHz POUT = 30.0 dBm MIN. .230 4L STUD S027

20AWG

Abstract: M208 SD4590 R45X
Contextual Info: SD4590  RF POWER TRANSISTORS 800-960 MHz CELLULAR BASE STATION ν ν ν ν ν ν ν ν GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT/OUTPUT MATCHING COMMON EMITTER CONFIGURATION DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY 26 VOLT,

Contextual Info: U fi SGS-THOMSON IlLiêTMOtêi MSC80185 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . • • . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 20:1 @ RATED CONDITIONS . ft 3.2 GHz TYPICAL . NOISE FIGURE 12.0 dB @ 2 GHz

SD4590

Abstract: atcb M208 20AWG R45X 2x200
Contextual Info: SD4590 RF POWER TRANSISTORS 800-960 MHz CELLULAR BASE STATION ν ν ν ν ν ν ν ν GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT/OUTPUT MATCHING COMMON EMITTER CONFIGURATION DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY 26 VOLT,

Contextual Info: N AMER PHILIPS/DISCRETE ObE D bbS3T31 0D14T07 T • LAE4002S _ r-3 i-3ii MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for common-emitter class-A linear power amplifiers up to 4 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich metallization ensure

Contextual Info: N AMER PHILIPS/DISCRETE bb53T31 0014^47 0 QbE D MAINTENANCE TYPE LKE27010R V V T -33-O jT MICROWAVE LINEAR POWER TRANSISTOR NPN transistor for use in a common-emitter class-A linear power amplifier up to 3,3 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry and gold metallization

21-030-J

Contextual Info: Sfï SGS-1H0MS0N MSC80196 \u RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 15:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.5 dB @ 2 GHz P out = 30.0 dBm MIN.

MPSH10 fairchild transistor

Abstract: MMBTH10 Spice Model MPS-H10 MMBTH10 MPSH10 TRANSISTOR C 3223 1358p
Contextual Info: MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency

Contextual Info: i_L ObE » N AMER PHILIPS/DISCRETE l bb53^31 0015001 LV2327E40R 3 i- o * ? r - MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear wideband power amplifier from 2,3 to 2,7 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide

dsb 3305

Abstract: ic-110 LUE2003S LUE2009S
Contextual Info: ^ SbE J> PHILIPS INT ERNATIONAL • 3 3 -0 5 LUE2003S LUE2009S 711Gfl2b DD4ti2S0 253 ■ PHIN MICROWAVE LINEAR POWER TRANSISTORS NPN silicon transistors for use in common-emitter class-A linear power amplifiers up to 4 GHz. Diffused emitter ballasting resistors, a self-aligned process entirely ion implanted and gold sandwich