COMMON EMITTER AMPLIFIER Search Results

Contextual Info: VAM 120 120 Watts, 27 Volts, Class AB Defcom 100 - 150 MHz GENERAL DESCRIPTION CASE OUTLINE The VAM 120 is a COMMON EMITTER device designed to operae in a collector modulated VHF power amplifier. It is a common emitter device, optimized for use in the 100-150 MHz range.

BLV59

Contextual Info: ASI BLV59 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV59 is a Common Emitter Device Designed for Class A and AB Amplifier Applications in TV Band IV-V Transmitters. FEATURES INCLUDE: • Gold Metalization • Intrnal Matching • Emitter Ballasting

Contextual Info: m 2N3632 \ \ NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N3632 is Designed for Class A,B>C Amplifier,Oscillator and Driver Applications Covering 130 TO 400MHz. PACKAGE STYLE T O -60 FEATURES INCLUDE: • Emitter Ballasted • Common Emitter Package

sd1490

Contextual Info: SD1490 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1490 is a Common Emitter Device Designed for Class A and AB Amplifier Applications in Television Band IV & V Transmitters. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • Internal Matching

BLV99

Contextual Info: BLV99 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV99 is a Common Emitter Device Designed for Amplifier Applications up to 860 MHz. FEATURES INCLUDE: PACKAGE STYLE 205 4L STUD • Gold Metallization • Emitter Ballasting • High Gain MAXIMUM RATINGS

MMBTH24

Abstract: MPSH11 MPSH24
Contextual Info: MPSH24/MMBTH24 MPSH24/MMBTH24 NPN General Purpose Amplifier 3 • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator

2N3632

Contextual Info: 2N3632 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N3632 is Designed for Class A,B,C Amplifier, Oscillator and Driver Applications Covering 130 to 400 MHz. PACKAGE STYLE TO- 60 FEATURES INCLUDE: • Emitter Ballasted • Common Emitter Package MAXIMUM RATINGS

MSC82100

Contextual Info: MSC82100 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY ∞:1 @ RATED CONDITIONS ft 1.6 GHz TYPICAL NOISE FIGURE 15.5 dB @ 2 GHz POUT = 27 dBm MIN. @ 1.0 GHz

MSC80185

Abstract: S027
Contextual Info: MSC80185 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 20:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.0 dB @ 2 GHz POUT = 28 dBm MIN. @ 2.0 GHz

80196

Abstract: MSC80196
Contextual Info: MSC80196 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 15:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.5 dB @ 2 GHz POUT = 30.0 dBm MIN. .250 2LFL S011

TRANSISTOR BV 32

Abstract: Bv 42 transistor PH1617-30 K010 G177
Contextual Info: an AMP ZE comDanv r = Wireless Bipolar Power Transistor, 1.6 - 1.7 GHz 30W PHI 617-30 Features l l l l l Designed for Linear Amplifier Applications -30 dBc Typ 3rd IMD at 30 Watts PEP Common Emitter Class AB Operation Internal Input Impedance Matching Diffused Emitter Ballasting

MSC80185

Abstract: MSC80186 S027
Contextual Info: MSC80186 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 15:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.5 dB @ 2 GHz POUT = 30.0 dBm MIN. .230 4L STUD S027

20AWG

Abstract: M208 SD4590 R45X
Contextual Info: SD4590  RF POWER TRANSISTORS 800-960 MHz CELLULAR BASE STATION ν ν ν ν ν ν ν ν GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT/OUTPUT MATCHING COMMON EMITTER CONFIGURATION DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY 26 VOLT,

Contextual Info: U fi SGS-THOMSON IlLiêTMOtêi MSC80185 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . • • . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 20:1 @ RATED CONDITIONS . ft 3.2 GHz TYPICAL . NOISE FIGURE 12.0 dB @ 2 GHz

Contextual Info: N AMER PHILIPS/DISCRETE ObE D bbS3T31 0D14T07 T • LAE4002S _ r-3 i-3ii MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for common-emitter class-A linear power amplifiers up to 4 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich metallization ensure

21-030-J

Contextual Info: Sfï SGS-1H0MS0N MSC80196 \u RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 15:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.5 dB @ 2 GHz P out = 30.0 dBm MIN.

Contextual Info: i_L ObE » N AMER PHILIPS/DISCRETE l bb53^31 0015001 LV2327E40R 3 i- o * ? r - MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear wideband power amplifier from 2,3 to 2,7 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide

TF135

Abstract: bf308
Contextual Info: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.

MPSH10 s parameters

Contextual Info: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency

Contextual Info: I 1 N AMER PHILIPS/DIS.CRETE MAINTENANCE TYPE ObE D bbSBTBl 0014^51 2 • LKE32002T LKE32004T T -Si-os' ~ MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 3 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry and gold sandwich

sealectro matrix

Abstract: sealectro
Contextual Info: SGS-1H0MS0N 5 1 . MSC80195 IH[ RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 20:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.0 dB @ 2 GHz P o u t = 28 dBm MIN. @ 2.0 GHz

MPS5179

Abstract: TRANSISTOR C 3223 MPS5179 small signal transistor MMBT5179 PN5179
Contextual Info: MPS5179 PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency

MPSH11

Abstract: MPS-H11 transistor mark l6 MMBTH11 Q100 Z-235 Ohmite RF transistor x vs L1245 P4 transistor
Contextual Info: MPSH11 MMBTH11 C E C TO-92 BE SOT-23 B Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving

Contextual Info: N AMER PHILIPS/DISCRETE ObE D • bb 5 3 T 31 Q O m ^ b ? b ■ J V LTE42005S LTE42008R MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4,2 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich