COMMON COLLECTOR NPN ARRAY Search Results

NJD6506S

Abstract: NJM6506 NJD65Q6 6506 NJD6507S NJD650SS
Contextual Info: NPN TRANSISTOR ARRAY NJM6506/6507 The NJD65Q6 and NJD6507 each consist of four general purpose silicon NPN transistors on common emitter. The NJD 6506 contains resistors for input bias. • Absolute Maximum Ratings Ta=25°C (6506) (6507) (6507) (6507) Collector to Emitter Voltage

ULN2003 ac

Contextual Info: UTC ULN2003 LINEAR INTEGRATED CIRCUIT THESE HIGH-VOLTAGE,HIGHCURRENT DESCRIPTION Darlington arrays are comprised of seven silicon NPN darlington pairs on a common monolithic substrate. All units have open-collector outputs and integral diodes for inductive

Darlington pair IC

Abstract: darlington arrays darlington buffer array J2004
Contextual Info: PJ2003/PJ2004 High-Voltage, High-Current Darlington Arrays arlington arrays are comprised of seven silicon NPN darlington pairs on a common monolithic substrate. All units have open-collector outputs and integral diodes for inductive load transient suppression.

darlington buffer array

Abstract: Darlington pair IC darlington arrays
Contextual Info: PJ2003/PJ2004 High-Voltage, High-Current Darlington Arrays arlington arrays are comprised of seven silicon NPN darlington pairs on a common monolithic substrate. All units have open-collector outputs and integral diodes for inductive load transient suppression.

ULN2003 features

Abstract: ULN2003 Darlington pair IC pin of uln2003 data sheet uln2003 uln2003 AND PIN Darlington pair IC schematic ULN2003 ttl ULN2003 IC ULN2003 application note
Contextual Info: ULN2003 LINEAR INTEGRATED CIRCUIT THESE HIGH-VOLTAGE,HIGHCURRENT DESCRIPTION Darlington arrays are comprised of seven silicon NPN darlington pairs on a common monolithic substrate. All units have open-collector outputs and integral diodes for inductive load transient suppression.

ne5504n

Abstract: NE5501 NE5503N Ne5502 NE5504 cmos open collector NE5501N Transistor 5503
Contextual Info: N E5501/5502/5503/5504-N DESCRIPTION BLOCK DIAGRAM PIN CONFIGURATION These high-voltage, high-current Darling­ ton transistor arrays are comprised of seven silicon NPN Darlington pairs on a common m onolithic substrate. All units feature open collector outputs and integral suppression

Contextual Info: CA3082 Transistors Common Collector Transistor Array Number of Devices7 Type NPN/PNP V(BR)CEO (V)16 V(BR)CBO (V) I(C) Max. (A)100m P(D) Max. (W)750m Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)125 I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: CA3082N Transistors Common Collector Transistor Array Number of Devices7 Type NPN/PNP V(BR)CEO (V) V(BR)CBO (V) I(C) Max. (A) P(D) Max. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.30Ž

Contextual Info:  !" MONOLITHIC 9 NPN PHOTRANSISTOR ARRAY EEEEEEEEEEEEEEEECFCA93298C OIT26 consists in a silicon phototransistor’s monolithic array. The phototransistors have a common collector, every emitter is available as a pad. The pitch of the silicon arrays is 0.6 mm, while the component electrical pitch is

transistor bc 577

Abstract: bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575
Contextual Info: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47k£2, R2 = 47kQ PNP: R1 = 2.2kfl, R2 = 47ki2

Contextual Info: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit •Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47ki2, R2 = 47k£2 PNP: R1 = 2.2k£ì, R2 = 47k£2

transistor marking code wts

Abstract: pnp array Q62702-C2496 tansistor npn transistor bc icbo nA npn Tansistor BC
Contextual Info: BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ PNP: R1 = 2.2kΩ, R2 = 47kΩ

TRANSISTOR 7812

Abstract: HFA3046 HFA3046B HFA3096 HFA3096B HFA3127 HFA3127B HFA3128 HFA3128B 8660
Contextual Info: HFA3046, HFA3096, HFA3127, HFA3128 TM Data Sheet October 1998 File Number 3076.10 Ultra High Frequency Transistor Arrays Features The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1

transistor digital 47k 22k PNP NPN

Abstract: VPS05604 "two TRANSISTORs" sot-363 pnp npn WTs12 Marking wts sot
Contextual Info: BCR 48PN NPN/PNP Silicon Digital Transistor Array 4 • Switching circuit, inverter, interface circuit, 5 6 driver circuit • Two galvanic internal isolated NPN/PNP Transistors in one package • Built in bias resistor 2 1 NPN: R1 = 47kΩ, R2 = 47kΩ

DSA0037427

Abstract: pnp array SEMD48 transistor digital 47k 22k PNP NPN
Contextual Info: SEMD48 NPN/PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit 4 • Two galvanic internal isolated NPN/PNP 5 3 Transistors in one package 6 2 • Built in bias resistor 1 NPN: R1 = 47kΩ, R2 = 47kΩ

transistor digital 47k 22k PNP NPN

Abstract: BCR48PN VPS05604
Contextual Info: BCR48PN NPN/PNP Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated NPN/PNP Transistors in one package
Built in bias resistor 2 1 NPN: R1 = 47k, R2 = 47k VPS05604 PNP: R1= 2.2k, R 2 = 47k

MDC03

Abstract: Marking TRANSISTOR 737 common collector pnp array common collector npn array MFW14 Diode marking MFW transistor marking code 2C MDC-03 6 "transistor arrays" ic pnp 8 transistor array
Contextual Info: MDC03 Transistor, array, 3 x NPN, 3 x PNP Features Dimensions Units: mm • • available in MFW14 package package marking: MDC03 • three NPN transistors with common emitter and three PNP transistors with common emitter are mounted in single package •

4733 PNP

Abstract: 80E08 HFA3046 4407 ic data 9544 transistor UHF power TRANSISTOR PNP
Contextual Info: HFA3046, HFA3096, HFA3127, HFA3128 Data Sheet [ /Title HFA3 046, HFA30 96, HFA31 27, HFA31 28 /Subject (Ultra High Frequency Transistor Arrays ) /Autho r () /Keywords (Intersil Corporation, five, transistor array, NPN PNP, 8V, 15ma, uhf ghz ft, low October 1998

transistor digital 47k 22k PNP NPN

Abstract: IC Marking AC 6 PIN
Contextual Info: BCR48PN NPN/PNP Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated NPN/PNP Transistors in one package
Built in bias resistor 2 1 NPN: R1 = 47k, R2 = 47k VPS05604 PNP: R1= 2.2k, R 2 = 47k

Contextual Info: G EIM IM U M c or por at i Om LA200 Series LA250 mOBM SEMICUSTOM LINEAR ARRAYS DATA SHEET CIRCUIT DESCRIPTION ADVANTAGES OF THE SEMICUSTOM ARE: • custom circuitry at low cost The Gennum semicustom integrated circuits are arrays of bipolar transistors, p diffused resistors, pinch resistors, junction

fu 9024

Abstract: LA 7376 LA 4108 ic LA 7841 7338 transistor HFA3046 HFA3046B HFA3096 HFA3127 HFA3127B
Contextual Info: HFA3046, HFA3096, HFA3127, HFA3128 Data Sheet October 1998 File Number 3076.10 Ultra High Frequency Transistor Arrays Features The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1

234 8715

Abstract: Ic 9430 HFA3046 HFA3046B HFA3096 HFA3096B HFA3127 HFA3127B HFA3128 HFA3128B
Contextual Info: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Arrays August 1996 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are

Transistor TT 2144

Abstract: Sii 9573 2907 pnp transistor NPN/Transistor TT 2144 Sii 9024 22E09
Contextual Info: HFA3046, HFA3096, HFA3127, HFA3128 H a r r is S E M I C O N D U C T O R March 1998 Ultra High Frequency Transistor Arrays Features Description • NPN Transistor f r . 8GHz • NPN Current Gain (hpE).

Contextual Info: Small Signal Transistor Arrays UNA0216 UN216 Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) Unit: mm For motor drives 12 3 • Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-base voltage (Emitter open)