COMMON COLLECTOR CONFIGURATION Search Results

8T38

Abstract: n8t38n N8T38
Contextual Info: 8T38 Signetics Bus Transceiver Quad Bus Transceiver Open Collector Product Specification Logic Products DESCRIPTION The 8T38 is a quad bus transceiver with a common two input disable control for the drivers. Open collector driver outputs together with low input requirements for

Contextual Info: NE522-F.N PIN CONFIGURATION FEATURES APPLICATIONS • 15ns maximum guaranteed propagation delay • 20/liA maximum input bias current • TTL compatible strobes and outputs • Open collector output for wire-OR'd ap­ plications • Large common mode input voltage range

pin details of str f6654

Abstract: f6656 f6654 STR-S5707 STR-S5707 applications STR F6656 STR-S5707 STR-S5708 GK-002-1A F6653 Quasi-resonant flyback transformer
Contextual Info: Data Sheet 28114A STR-S5707 AND STR-S5708 OFF-LINE SWITCHING REGULATORS – WITH BIPOLAR SWITCHING TRANSISTOR COLLECTOR 1 COMMON 2 BASE 3 SINK 4 OVER-CURRENT PROTECTION 5 INHIBIT 6 32 V SENSE 7 DRIVE 8 V IN 9 The STR-S5707 and STR-S5708 are specifically designed to meet

transistor BF 199

Abstract: BF 199 bf199 transistor A11A
Contextual Info: SIEM ENS BF 199 NPN Silicon RF Transistor • For common emitter IF TV amplifier stages • Low feedback capacitance due to shield diffusion Type Marking Ordering Code BF 199 - Q62702-F355 Pin Configuration 1 2 3 C E Package1 TO-92 B Maximum Ratings Parameter

transistor marking code wts

Abstract: sot-23 marking WTs transistor marking code wts 15 sot-23 WTs WTs transistor
Contextual Info: SIEMENS BCR 166 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=4.7ki2, R2=47kfl Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23

transistor npn 100w amplifier

Abstract: 2SC3660 rf power amplifier 100w 470-860 rf amplifier 100w npn 28v 100w amplifier
Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2SC3660 Silicon NPN high power UHF transistor 2SC3660 is designed for Class AB Push­ Pull linear power amplifier applications in a common emitter configuration specifically in operating TV transmitters . Output Power: Frequency Range:

BCR158T

Abstract: SC75
Contextual Info: BCR158T PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=2.2k, R2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07183 Type Marking BCR158T WIs Pin Configuration 1=B 2=E Package 3=C SC75

BCR133T

Abstract: SC75
Contextual Info: BCR133T NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR133T WCs Pin Configuration 1=B 2=E Package 3=C SC75

BCR153

Contextual Info: BCR153 PNP Silicon Digital Transistor Preliminary data 3
Switching circuit, inverter, interface circuit, driver circuit
Built in resistor R 1=2.2k, R2=2.2k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR153 WBs Pin Configuration 1=B 2=E Package

BCR162T

Abstract: SC75
Contextual Info: BCR162T PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07183 Type Marking BCR162T WUs Pin Configuration 1=B 2=E Package 3=C SC75

BCR108T

Abstract: SC75
Contextual Info: BCR108T NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=2.2k, R2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR108T WHs Pin Configuration 1=B 2=E Package 3=C SC75

Contextual Info: SIEMENS BF 599 NPN Silicon RF Transistor • Common emitter IF/RF amplifier • Low feedback capacitance due to shield diffusion Type Marking Ordering Code tape and reel BF 599 NB Q62702-F979 Pin Configuration 2 1 3 E B Package1) SOT-23 C Maximum Ratings

MS1076

Abstract: HF SSB APPLICATIONS
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1076 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • 30 MHz 28 VOLTS GOLD METALLIZATION POUT = 220 W PEP GP = 12 dB GAIN MINIMUM COMMON EMITTER CONFIGURATION

transistor ballast 1000W

Abstract: transistor 1000W 1030 mhz 1000W TRANSISTOR MAPRST1030-1KS J22 transistor
Contextual Info: AVIONICS PULSED POWER TRANSISTOR 1000 WATTS, 1030 MHz, 10us PULSE, 1% DUTY 23 Jan 2007 Outline Drawing Features • • • • • • • • • MAPRST1030-1KS NPN Silicon Microwave Power Transistors Common Base Configuration Broadband Class C Operation

transistor c2383

Abstract: c2383 transistor C2383 C2383 NPN Transistor PH1214-30EL
Contextual Info: an AMP company Radar Pulsed Power Transistor, 3OW, 1 .Oms Pulse, 10% Duty PHI 214-30EL . 1.2 - 1.4 GHz v2.00 Features _-.- - - =.* NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors

BFR90

Contextual Info: SIEMENS NPN Silicon RF Transistor BFR 90 • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 90 BFR 90 Q62702-F560 Pin Configuration

Radar

Abstract: PH1214-12M radar 77 ghz
Contextual Info: Radar Pulsed Power Transistor 12 Watts, 1.20-1.40 GHz PH1214-12M PH1214-12M Radar Pulsed Power Transistor - 12 Watts, 1.20-1.40 GHz, 150 µS Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration

m5l8288

Abstract: M5L8289 M5L8284
Contextual Info: ETE D • M ITSUBISHI L S Is b24=1020 0 0 14T 02 G ■ M5L8289P T - 5 2 -3 3 -5 5 BUS ARBITER MITSUBISHI MICNPTR/niPRC DESCRIPTION T h e M 5L8289P Is a system bus ( ^ M U L T IB U S ) a rb ite r for the PIN CONFIGURATION (TOP VIEW) M E L P S 86, 88 16-b it m icroprocessors. W h e n a re q u e s t for

Contextual Info: MARKTECH 1 ÔE INTERNATIONAL ]> • PHOTOCOUPLER 6N138, 6N139 STTTbSS ÜOQGSE4 3 " P m -a 5 GaAIAs INFRARED+ PHOTO-IC The 6N138 and 6N139 consist of a GaAIAs infrared emitting diode coupled with a split-Darlington output configuration. A high.speed GaAIAs infrared manufactured with a unique

Contextual Info: MP4501 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type Four Darlington Power Transistors in One MP4501 Industrial Applications High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching • Package with heat sink isolated to lead (SIP 12 pins)

13MM

Abstract: transistor Common Base configuration capacitor 50 uf Rogers 6010.5
Contextual Info: z-s?=‘= .-= - = -M= ZF an AMP company * 3 = = - Radar Pulsed Power Transistor, 135W, 20~s Pulse, 1% Duty PH2931 -I 3% 2.9 - 3.1 GHz Features NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry

Mallory Capacitor

Contextual Info: -= -=z an AMP company = Radar Pulsed Power Transistor, 3OW, lps Pulse, 10% Duty PH3134-30s 3.1 - 3.4 GHz v2.00 Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors

ARC-182

Abstract: transistor Common emitter configuration transistor t 04 27 PHOI an/ARC-182
Contextual Info: an AMP company CW Power Transistor, 30 - 400 MHz 16W PHOI 04-I 6 Features NPN Silicon Power Transistor Common Emitter Configuration Class AB Broadband Operation 16 Watt PEP Output Diffused Emitter Ballasting Resistors Gold Metallization System Prqqn in Thousands of ARC-182 Airborne Radios

74LSXX IC

Abstract: 74LSxx hp 6n139 74lxx TTL 74LSxx ic 74xx characteristics of 74LSxx 74hxx 6n139
Contextual Info: M QUALITY • L TECHNOLOGIES h ig h g a in s plit -d a r lin g to n o pto c o u pler s 6N138 6N139 PACKAGE DIMENSIONS The 6N138/9 single channel optocouplers contain a 700 nm GaAsP LED emitter which is optically coupled to a high gain detector in a split Darlington configuration, providing extremely