COLECTOR Search Results

5B00

Contextual Info: UNCONTROLLED DOCUMENT ANODE MARK TOP VIEW REV, A B NOTES: 1t j 16 2E Ì15 1.3.5.7. ANODE 2.4.6.8. CATHODE 3t j 14- 10,12,14-/16. COLECTOR 4E Ì 13 5 È 3 12 bf 3 11 PART NUMBER REV. OCP — PCT41 1 6/E B E.C.N. NUMBER AND REVISION COMMENTS E.C.N, #10BRDR. & #10776.

PC702VB

Contextual Info: PC702V SHARP High Colector -emitter Voltage Type Photocoupler & Lead forming type I type and taping reel type (P type) are also available. (PC702VI/PC702VP)(Page 656) * * T U V (VDE0884) approved type is also available as an option. • Features (Unit ! mm)

PC8052

Abstract: O300V pc8q52 sharp
Contextual Info: SHARP PC852 Series /PC853/ PC853H High Colector -emitter Voltage Type Photocouplers PC852 Series PC853/PC853H * Lead forming type I type and taping reel type (P type) are also available. (PC852I/PC852P/PC853I/PC853P) (Page 656) • Features 1. High collector-emitter voltage

IRGB430UD2

Abstract: IRGTI140U06 CPV362MU IRGPC50U
Contextual Info: Illl E S S I n t e r n a t i o n a l R e c t if i e r Insulated Gate Bipolar Transistors VCES Colector to Emitter Voltage Volts PMt Number M«*VcE(on) Colector to Emitter Voltage (Volts) IGBTs ICContinuous Colector Current Tc=25‘ C Tc=100*C (Amps) (Amps)

Contextual Info: forward [ntejuatiokal electronicslid, BC818S SEMICONDUCTOR TECHNICAL DATA. NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS at Tamb=*25*C Characteristic Colectoi>Base Voka^ Colector-EmWer Vokage Emitter-Base Voltage Colector Curreit

Contextual Info: P FORWARDINTERNATIONAL ELECTRONICS LTD. 2N2222 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR Colector-Bnittef Voltage: VCBO=30V * Cofcctor Dissipation: Pc max =625 mW ABSOLUTE MAXIMUM RATINGS at Tamb=25'C C haracteristic

106U

Abstract: be311
Contextual Info: PART NUMBER REV. OCP — PCT41 1 6 / E A UNCONTROLLED DOCUMENT TOP VIEW ANODE MARK REV, A NflTFS' j 16 1.3.5.7. ANODE 2E Ì15 2.4.6.8. CATHODE 9,11,13,15. EMITTER 3t j 14- 10,12,14-.16. COLECTOR 4E Ì 13 5 È 3 12 bf 3 11 7t 3 ID BE 3 9 E.C.N. NUMBER AND REVISION COMMENTS

pc851

Contextual Info: SHARP PC851 High Colector-em itter Voltage Type Photocoupler PC851 * Lead forming type I type and taping reel type (P type) are also available. ( PC851I/PC851P) (Page 656) • Features ■ Outlne Dim ensions (Unit : mm) 1. High collector-emitter voltage

2sb646

Abstract: 2SD666 2S8646 2SB646A
Contextual Info: HITACHI 2SB646, 2SB646A SILICON PNP EPiTAXIAL LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A a r 1. Hmiiier 2. Colector Base Dimension« in mm} I A B S O L U T E M AXIM UM R A T IN G S (Ta=255C Item Symbol M AXIM UM C O L L E C T O R D tSSiPA T lO H

em 434

Abstract: PC826 PC846 PC816 Sharp PC816
Contextual Info: SHARP PC816 Serise High Colector-emitter Voltage, High Density Mounting Type Photocoupler PC816 Series * Lead forming type I type and taping reel type (P type) are also available. (PC816I/PC816P) (Page 656) • Features ■ Applcatkm s 1. High collector-emitter voltage ( V c a : 7 0 V )

I12C

Abstract: KSC2758 samsung tuner
Contextual Info: SAMSUNG SEM ICON D UCTOR . INC KSC2758 14E D | T 'lb M m a OOObTSS fl | NPN EPITAXIAL SILICO N TRANSISTOR ' RF. MIXER FOR UHF TUNER T-31-15 SO T-23 • HIGH POWER GAIN TYP. 17d8 • LOW NF TYP. 2.8dB ABSOLUTE MAXIMUM RATINGS T,=25°C Characteristic Colector-Base Voltage

Contextual Info: F LS TTL DN74LS Series DN74LS156 DN74LS156 Dual 2-line to 4-line Decoders / Demultiplexers with Open Colector Outputs • Description P-2 DN74LS156 contains two 2-bit binary to quarternary decoder/demultiplexer circuits with open collector outputs. ■ Features

DN74LS156

Contextual Info: LS TTL DN74LS Series D N 7 4 L S 1 5 6 DN74LS156 IV 7 ^ r5 & Dual 2-lin e to 4 -lin e Decoders / Demultiplexers with Open Colector Outputs) P-2 • Description D N 74LS156 contains tw o 2-bit binary to quarternary d ecoder/dem ultiplexer circuits w ith open collector outputs.

PED relay

Abstract: ICA11 2SC2738 vdfc
Contextual Info: Silicon NPN Triple Diffused Power Transistors TO-220 Package 2SC2738 NPN A b s o lu te M axim um R a tin g s (T i= 2 5 °C ) item Colector-Base Voltage Colecto r-Emiter VoliOQO Em«ter-8asö Voilago Peak C dockx Carrent Coilector Curren« Baso Current Cottedor Power Dissipaion

670p

Contextual Info: PC3Q66/PC3Q66Û SHARP PC3Q66/PC3Q66Q i-flat Package, High Colector-Em itter Voltage Type Half Pitch Photocoupler • Features ■ O ullne Dimensions 1. High collector-em itter voltage U nit : mm 1 0 .3 t u (V cko : 80V) 2. Half pitch type (lead pitch : 1.27mm)

Contextual Info: LS TTL DN74LS Series DN74LS156 DN74LS156 IV, 7 4 ^ 1 5 6 Dual 2 -lin e to 4 -lin e Decoders / Demultiplexers with Open Colector Outputs • Description D N 74LS156 P-2 c o n ta in s tw o 2 -b it b in a ry to q u a rte rn a ry d e c o d e r/d e m u ltip le x e r c irc u its w ith o p e n c o lle c to r o u tp u ts .

transistor marking RHs

Contextual Info: SIEMENS BFS 483 NPN Silicon RF Transistor « For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA » f i = 8GHz F = 1.2dB at 900MHz •Two galvanic internal isolated Transistors in one package n Fi I R Li 111 □ ESP: Electrostatic discharge sensitive device, observe handling precaution!

AVC8

Contextual Info: SI E M EN S C M P N T S -, OPTO ñS3b32b GGOSD4Û 3 H S I E X 44E » MCT2/MCT2E SIEMENS PHOTOTRANSISTOR OPTOCOUPLER T -m - 93 Package Dim ensions in Inches mm Ñ fl Pi um COLECTOR FEATURES M a x im u m R a t in g s • 7500 Volt W ithstand Test Voltage Gallium Arsenide LED

DN74LS156

Abstract: ab2c
Contextual Info: LS TTL DN74LS Series D N 7 4 L S 1 5 6 DN74LS156 IV 7 ^ r5 & Dual 2-lin e to 4 -lin e Decoders / Demultiplexers with Open Colector Outputs) P-2 • Description D N 74LS156 contains tw o 2-bit binary to quarternary d ecoder/dem ultiplexer circuits w ith open collector outputs.

Q62702-F1574

Abstract: GMA marking
Contextual Info: BFS 483 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA • fT = 8GHz F = 1.2dB at 900MHz • Two galvanic internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution!

ttl ic for demultiplexer

Abstract: DN74LS156 ab2c
Contextual Info: LS T T L DN74LS Series DN74LS156 DN74LS156 Dual 2-line to 4-line Decoders / Demultiplexers with Open Colector Outputs • Description P-2 D N 7 4 L S 1 5 6 c o n ta in s tw o 2 -b it b in a ry to q u a rte m a ry d e c o d e r/d e m u ltip le x e r c irc u its w ith o p e n c o lle c to r o u tp u ts .

TQ-220AB

Abstract: IRGBC20S IRGNI165F06 *gBC20f
Contextual Info: In t e r n a t io n a l R e c tifie r « Insulated Gate Bipolar Transistors IGBTs Part Numbar cran VCES Cdactorto EnMarVokage Volt. Mm VceM Colectorto EmitterVoltage (Vota) ICConUnuoiB Cohctof Currant Tc*25’C Tc«100*C (Amp*) (Amp*) Pd Mu Power Dissipation Qrcti

PC895

Contextual Info: SHARP PC865 Serlos High Sensitivity, Low Colector Dark Current, High Colector-emitter Voltage Type Photocoupler • Applcatfons PC865 Series ■ Features 1. Low collector dark current I a o : M A X . 10 / / A at V ce — 2 4 V , Ta = 8 5 ° C 2. High current transfer ratio

Contextual Info: SIEMENS BFS 483 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA • fT = 8GHz F = 1.2dB at 900MHz • Two galvanic internal isolated Transistors in one package El Fl F SI ¥ Ef FI ¥ C2 ESP: Electrostatic discharge sensitive device, observe handling precaution!