COB1 Search Results

ISD1730

Abstract: ISD1700 isd1700 series isd1730 PCB ISD1730 demo ISD17xx ISD17xxx Voice recording kit
Contextual Info: ISD-COB17x x x User’s Manual September 2006 Rev 2 1/4 DESCRIPTION: The ISD-COB17xxx is a COB/demo board for ISD1700 series. It has either an ISD17xxx die or ISD17xxx SOIC unit assembled, where xxx represents the duration, to demonstrate the functionalities and voice

SSB-COB11668SRW

Abstract: double sided pcb FR4
Contextual Info: UNCONTROLLED DOCUMENT SC :1.5 PART NUMBER REV. SSB-COB11668SRW PRELIM INARY IN P / N DIR 6.00 [0.236] 120.00 E4.724] 116.00 [4.567] <21.00 [00.039] <2 PLS. in ro CO a] i_ i CD CD ai r^ Is* N \D ai 1_1 TEST COND MIN REVERSE VOLTAGE 1 MAX UNITS nm 3.6 4 .6

FF55

Abstract: MD10
Contextual Info: UNCONTROLLED DOCUMENT PA RT NUM BER SC:2 SSB-COB1 6880SIW-1 1 REV, 11,00 [0.433] r I REV. 2 .3 5 [0.093] E.C.N. NUM BER AND REVISIO N B COMMENTS DATE A E.C.N, # 1 0 8 5 4 . 4 .1 8 .0 2 B E.C .N. # 1 1 0 6 0 . 1 1 .2 0 .0 3 UNDER REVISION 193.10 [7.602] 3

tp4093

Abstract: TMPT5401 mA 723 TMPT2907 TP4221
Contextual Info: PNP TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO V Device Marking Type v BR CBO V ’ (BR)CEO (BR)EBO Max. @ V C8 (V) (V) (V) (nA) (V) v CE(MI) DC Current Gain K* @ lc @ v CE Max. @ lc Min. Max. (mA) (V) (V) (mA) Min. @ lc Cob1 t,1 (MHz) (mA)

double sided pcb FR4

Contextual Info: UNCONTROLLED DOCUMENT SC :1.5 PA R T N U M B E R REV. SSB-COB1 16 6 8 YW PRELIM INARY IN P / N DIR 6.00 [0 .2 3 6 ] LEO.OO E 4 .7 2 4 ] 116.00 [4 .5 6 7 ] <21.00 [0 0 .0 3 9 ] <2 P L S . in ro CO a] i_ i CD CD ai r^ Is* N \D ai 1_1 r CD ELECTRO-OPTICAL CHARACTERISTICS TA=25T PER MODULE

COP8-PM-00

Abstract: eeprom programmer schematic cop8sa COP8 EEPROM program COP8SE COP8sgr eeprom programmer EPROM 30 pin programmer schematic free circuit eprom programmer ic eeprom programmer
Contextual Info: Revision 1.0, 8/2001 COP8 OTP/ROM PROTOTYPING KIT QUICKSTART MANUAL for COP8-PRO-COB1 INTRODUCTION The COP8-PRO-COB1 Prototyping Kit provides a low cost, easy-to-use environment for quickly starting the development and debugging of COP8 OTP/ROM applications.

Contextual Info: PNP TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO V Device Marking Type BR CBO V ’ (BR)CEO (V) (V) v DC Current Gain (BR)EBO Max. @ V C8 (V) (nA) (V) K* v CE(MI) @ lc @ v CE Max. @ lc Min. Max. (mA) (V) (V) (mA) Min. @ lc Cob1 t,1 (MHz) (mA)

MO-155

Abstract: MD10 peak soldering body temp
Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER SSB-COB1 6880SIW -1 1 REV, *-1 1 ,0 0 [ 0 .4 3 3 ] I A 2 ,3 5 E0.093] E.C.N. [00 .1 90] 0 6 .3 6 DATE 4 .1 8 .0 2 [ 0 0 .2 5 0 ]

COB15518GW

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. S S B — COB15518GW E L E C T R O -O P T IC A L CHARACTERISTICS Ta = 2 5 X P E R M O D U LE lf=31DmA P ARAM ETER TEST COND MIN TYP PEAK W AVELENGTH 565 FORW ARD V OLTAG E 42 R EV ER S E V O LTA G E MAX nm 4 ,5 3 LUM INOUS INTENSITY

Contextual Info: UNCONTROLLED DOCUMENT PA R T N U M B ER REV. SSB-COB11667SRW ELECTRO-OPTICAL CHARACTERISTICS TA=25X PER MODULE IH ID Q n A PARAMETER TEST COND MIN TYP PEAK WAVELENGTH 650 FORWARD VOLTAGE 3.4 REVERSE VOLTAGE MAX nm 4,4- 3 LUMINOUS INTENSITY RED REFLECTOR FINISH:

Contextual Info: ISD-COB19xx User’s Manual Publication Release Date: June 12, 2008 Revision 1.0 J19 FMC1 2 J13 FMC3 J15 R/P J14 FMC2 1 3 4 5 Hardware Configuration 1. Frequency selection: J16, J17 and J18. Use jumper to select desired sampling frequency. Sampling Frequency

MPS8093

Abstract: mps404
Contextual Info: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE, 13 D • GS0M33Ô 00035^7 7 ■ ALGR 93D 03597 2 S E M I C O N D S / ICS T'Ql'Qb ' PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain ^CBO

BBC DS 6

Abstract: THBC547B bbc ds 2
Contextual Info: ALL E GR O M I C R O S Y S T E M S 8514019 SPRAGUE, INC T3 D • D5G1433Ô 0 0 0 3 5 ^ SEM ICON DS / I C S 93D E ■ ALGR ''^ fO 0 3 5 6 9 2>^ BIPOLAR TRANSISTOR CHIPS NPN Transistors Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device

mpsa25c

Abstract: MPS-A12 MPS6576C
Contextual Info: AL L E GRO MI C ROS Y S T E MS I NC T3 D • 0504330 DDQBSbb - 8514019 SPRAGUE. 7 ■ ALGR , ^ 93D 03566 3 ' X ' f l i l ~\£> SEMICONDS / ICS BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type

Contextual Info: B U R R -B R O W N - DESCRIPTION • 16-BIT RESOLUTION T he D A C 70B H /72B H are com plete 16-bit digitalto- analog converters th a t include a precision buriedzener voltage reference an d a low -noise, fast-setting o u tp u t o p eratio n al am plifier voltage o u tp u t m od­

9y transistor

Abstract: cog lcd scan 1206 cms diode diagram of LED matrix display op amp current booster using transistors HCD66727A03 HCD66727A03BP HCD66727A04 HCD66727A04BP HD44780U
Contextual Info: HD66727 Low-Power Dot-Matrix Liquid Crystal Display Controller/Driver with Key Scan Function Description The HD66727, dot-matrix liquid crystal display controller and driver LSI incorporating a key scan function, displays alphanumerics, katakana, hiragana, and symbols. It can be configured to drive a dotmatrix liquid crystal display and control key scan functions under the control of an I2C bus or a clocksynchronized serial microprocessor. A single HD66727 is capable of displaying up to four 12-character

Contextual Info: B U R R -B R O W N E ADC84 ADC85H ADC87H ] 1C ANALOG-TO-DIGITAL CONVERTERS FEATURES • INDUSTRY STANDARD 12-BIT A/D CONVERTERS • COM PLETE WITH CLOCK AND INPUT BUFFER • HIGH SPEED CONVERSION: 10*/» {mix • THREE TEM PERATURE RANGES: 0°C to + 70 ° C

10AM12

Abstract: COB1
Contextual Info: 10AM12 12 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM12 is a COMMON EMITTER transistor capable of providing 12 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

Contextual Info: SPRAGUE/SEtllCOND 8514019 SPRAGUE, G R OU P 13 T> • SEMICONDS/ IC S Ö513ÖSD GGGaSbT 93D 0 3 5 6 9 2>^ r - â 3 - i ■ - BIPOLAR TRANSISTOR CHIPS NPN Transistors Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TÄ = 25°C DC Current Gain Ic ß O

Contextual Info: SPRAGUE/ 1 : SPRAGUE/SEMICOND 8514019 SPRAGUE! GROUP T3 D • SEMICONDS / ICS ÖS13Ö50 0003550 =5 T^âl^O 93D 0 3 5 5 8 P BIPOLAR TRANSISTOR CHIPS NPN Transistors T H ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO Device Type DC Current Gain

transistor c257

Contextual Info: S P RAG UE /S EM IC ON D GROUP 8 514 0 19 SPRAGUE. =13 D • SEM ICO N D S / ICS fiS13ÔS0 00G357b 0 ■ T*" <27-^Î ö 93D 03576J>. BIPOLAR TRANSISTOR CHIPS PNP Transistors Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain

Contextual Info: PRODUCT DATASHEET Barbara series last update 13/6/2013 DETAILS Ordering Number C12955_BARBARA-XW Family Barbara Type Reflector Color white Diameter 70 mm Height 44,7 mm Style round Optic Material PC Holder Material Fastening glue Status ready ROHS Comliant

TRANSISTOR BH 4216

Abstract: SCROLLING LED DISPLAY CIRCUIT diagram 8x 8 led dot matrix annunciator hl 4020 LR 1737 R HCD66727A03 HCD66727A03BP HCD66727A04 HCD66727A04BP
Contextual Info: HD66727 Low-Power Dot-Matrix Liquid Crystal Display Controller/Driver with Key Scan Function HITACHI A D E -2 0 7 -3 1 1 (Z ) '9 9 .9 R e v . 0 .0 Description The HD66727, dot-matrix liquid crystal display controller and driver LSI incorporating a key scan

philips 433-2

Abstract: el 817 PHILIPS 966 india cities philips ks
Contextual Info: MAIN MAIN MENU MENU SALES OFFICES Philips Components - a worldwide company Australia: Philips Components Pty Ltd, NORTH RYDE, Tel. 02 9805 4455, Fax. (02) 9805 4466. Philippines: Philips Semiconductors Philippines Inc., METRO MANILA, Tel. (02) 816 6345, Fax. (02) 817 3474.