CMOS STATIC RAM 1MX8 5V Search Results
CMOS STATIC RAM 1MX8 5V Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
CY7C167A-35PC |
![]() |
CY7C167A - CMOS SRAM |
![]() |
||
HM3-6504B-9 |
![]() |
HM3-6504 - Standard SRAM, 4KX1, 220ns, CMOS |
![]() |
||
HM1-6516-9 |
![]() |
HM1-6516 - Standard SRAM, 2KX8, 200ns, CMOS |
![]() |
||
HM1-6516B/B |
![]() |
HM1-6516 - Standard SRAM, 2KX8, 200ns, CMOS |
![]() |
||
HM4-6504S-8/B |
![]() |
HM4-6504 - Standard SRAM, 4KX1, 220ns, CMOS |
![]() |
CMOS STATIC RAM 1MX8 5V Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
1Mx8 bit Low Power CMOS Static RAMContextual Info: EDI8F81025C 1Mx8 STATIC RAM CMOS, MODULE FEATURES DESCRIPTION n 1Mx8 bit CMOS Static RAM The EDI8F81025C is an 8Mb CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. Access Times 70 through 100ns |
Original |
EDI8F81025C 100ns EDI8F81025LP) EDI8F81025C 512Kx8 EDI8F81025C70B6C EDI8F81025C85B6C 1Mx8 bit Low Power CMOS Static RAM | |
cmos static ram 1mx8 5v
Abstract: 1Mx8 bit Low Power CMOS Static RAM 1m x 8 sram EDI8F81026C EDI8F81026C20M6C EDI8F81026C20M6I EDI8F81026C35M6C EDI8F81026C85M6C
|
Original |
EDI8F81026C EDI8F81026C 512Kx8 cmos static ram 1mx8 5v 1Mx8 bit Low Power CMOS Static RAM 1m x 8 sram EDI8F81026C20M6C EDI8F81026C20M6I EDI8F81026C35M6C EDI8F81026C85M6C | |
EDI8F81024C
Abstract: EDI8F81024C100BSC EDI8F81024C70BSC EDI8F81024C70BSI EDI8F81024C85BSC EDI8F81024LP100BSC EDI8F81024LP70BSC EDI8F81024LP85BSC 1Mx8 bit Low Power CMOS Static RAM
|
Original |
EDI8F81024C 1024Kx8 EDI8F81024C 128Kx8 100ns EDI8F81024LP) EDI8F81024C70BSC EDI8F81024C100BSC EDI8F81024C70BSC EDI8F81024C70BSI EDI8F81024C85BSC EDI8F81024LP100BSC EDI8F81024LP70BSC EDI8F81024LP85BSC 1Mx8 bit Low Power CMOS Static RAM | |
Contextual Info: EDI8F81027C White Electronic Designs 1Mx8 CMOS SRAM MONOLITHIC FEATURES DESCRIPTION n 1 Mx8 bit CMOS Static RAM The EDI8F81027C is an 8Mb CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. • Access Times 55 through 100ns |
Original |
100ns EDI8F81027LP EDI8F81027C EDI8F81027C 512Kx8 EDI8F81027LP) EDI8F81027C55B6C EDI8F81027C70B6C EDI8F81027C85B6C | |
cmos static ram 1mx8 5v
Abstract: cd 5151 EDI8F81027C85B6C EDI8F81027LP55B6C EDI8F81027LP70B6C EDI8F81027LP85B6C EDI8F81027C EDI8F81027C100B6C EDI8F81027C55B6C EDI8F81027C70B6C
|
Original |
EDI8F81027C EDI8F81027C 512Kx8 100ns EDI8F81027LP EDI8F81027LP) EDI8F81027C55B6C EDI8F81027C70B6C cmos static ram 1mx8 5v cd 5151 EDI8F81027C85B6C EDI8F81027LP55B6C EDI8F81027LP70B6C EDI8F81027LP85B6C EDI8F81027C100B6C EDI8F81027C55B6C EDI8F81027C70B6C | |
EDI8F81027C
Abstract: EDI8F81027C100B6C EDI8F81027C55B6C EDI8F81027C70B6C EDI8F81027C85B6C EDI8F81027LP55B6C EDI8F81027LP70B6C EDI8F81027LP85B6C 1Mx8 bit Low Power CMOS Static RAM
|
Original |
EDI8F81027C EDI8F81027C 512Kx8 100ns EDI8F81027LP EDI8F81027LP) EDI8F81027C55B6C EDI8F81027C70B6C EDI8F81027C100B6C EDI8F81027C55B6C EDI8F81027C70B6C EDI8F81027C85B6C EDI8F81027LP55B6C EDI8F81027LP70B6C EDI8F81027LP85B6C 1Mx8 bit Low Power CMOS Static RAM | |
1024Kx8Contextual Info: EDI8F81024C White Electronic 1Mx8 Static RAM CMOS, Module FEATURES DESCRIPTION 1024Kx8 bit CMOS Static Random Access Memory • • • • Access Times 70 thru 100ns Data Retention Function EDI8F81024LP TTL Compatible Inputs and Outputs Fully Static, No Clocks |
Original |
1024Kx8 100ns EDI8F81024LP) EDI8F81024C EDI8F81024C 128Kx8 81024C70BSC EDI8F81024C85BSC | |
cmos static ram 1mx8 5v
Abstract: EDI8F81024C EDI8F81024C100BSC EDI8F81024C70BSC EDI8F81024C85BSC EDI8F81024LP70BSC EDI8F81024LP85BSC 1024Kx8
|
Original |
EDI8F81024C 1024Kx8 100ns EDI8F81024LP) EDI8F81024C 128Kx8 EDI8F81024LP70BSC EDI8F81024C85BSC cmos static ram 1mx8 5v EDI8F81024C100BSC EDI8F81024C70BSC EDI8F81024C85BSC EDI8F81024LP70BSC EDI8F81024LP85BSC | |
Contextual Info: EDI8F81024C White Electronic Designs 1Mx8 Static RAM CMOS, Module FEATURES DESCRIPTION n 1024Kx8 bit CMOS Static n Random Access Memory • • • • Access Times 70 thru 100ns Data Retention Function EDI8F81024LP TTL Compatible Inputs and Outputs Fully Static, No Clocks |
Original |
1024Kx8 100ns EDI8F81024LP) EDI8F81024C EDI8F81024C 128Kx8 singlF81024C70BSC EDI8F81024C85BSC | |
Contextual Info: EDI8F81027C 1Mx8 CMOS SRAM MONOLITHIC FEATURES DESCRIPTION • 1 Meg x 8 bit CMOS Static The EDI8F81027C is an 8 megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. ■ Random Access Memory • Access Times 55 thru 100ns |
Original |
EDI8F81027C 100ns EDI8F81027LP EDI8F81027C 512Kx8 EDI8F81027LP) EDI8F81027C55B6C EDI8F81027C70B6C | |
cmos static ram 1mx8 5vContextual Info: 1Mx8, 55 - 150ns, DIP 30A143-00 C 8 Megabit CMOS SRAM DPS1MS8MP DESCRIPTION: The DPS1MS8MP is a 1Meg x 8 high-density, low-power static RAM module comprised of two 512K x 8 monolithic SRAM’s, an advanced high-speed CMOS decoder and decoupling capacitors surface mounted on |
Original |
150ns, 30A143-00 600-mil-wide, 32-pin cmos static ram 1mx8 5v | |
Contextual Info: MS81OOORKX-70/85/10/20 Issue 1.0: June 1989 M S81000RKX 1Mx8 CM0S SRAMModule ADVANCE PRODUCT INFORMATION 1,048,576 x 8 CMOS High Speed Static RAM Pin Definition Features Vcc A0 A1 A2 A3 DO D1 A4 A5 A6 A7 AÔ A13 D2 CS A15 A16 A17 A9 GND OE A14 D3 D4 D5 WE |
OCR Scan |
MS81OOORKX-70/85/10/20 S81000RKX 110mW MS81000R | |
FBGA48
Abstract: 1mx8 STK14EE8-T STK14EE8-BF45
|
Original |
STK14EE8 STK14EE8 ML0068 FBGA48 1mx8 STK14EE8-T STK14EE8-BF45 | |
Contextual Info: DENSE-PAC 8 Me8abit CMOSSRAM M I C R O S Y S T E M S D P S 1M S 8 M P PRELIM IN A RY DESCRIPTIO N: The DPS1MS8MP is a 1Meg x 8 high-density, low-power static RAM module comprised of two 512Kx8 monolithic SRAM's, an advanced high-speed CMOS decoder and decoupling capacitors surface |
OCR Scan |
512Kx8 600-mil-wide, 32-pin A0-A17 30A143-00 | |
|
|||
Contextual Info: 8 Megabit CMOS SRAM M I C R O S Y S T E MS DPS1MS8MP DESCRIPTION: The D PS1M S8M P is a 1Meg x 6 high-density, low-power static RAM module comprised of two 512K x 8 monolithic SRAM's, an advanced high-speed CMOS decoder and decoupling capacitors surface mounted on |
OCR Scan |
600-mil-wide, 32-pin 30A143-00 | |
cmos static ram 1mx8 5vContextual Info: DENSE-PAC 8 Megabit CMOS SRAM M IC R O S Y S T EM S DPS1MS8MP PRELIMINARY DESCRIPTION: The DPS1MS8MP is a IM eg x 8 high-density, low-power static RAM module comprised of two 5 1 2K x 8 m o no lithic SR A M 's, an advanced high-speed C M O S decoder and decoupling |
OCR Scan |
600-mil-wide, 32-pin A0-A17 30A14 cmos static ram 1mx8 5v | |
1431 TContextual Info: 8 Megabit CM O S SRAM D E N S E - P A C D P S 1M S 8M P M I C R O S Y S T E M S DESCRIPTION: The D P S 1 M S 8 M P is a 1Meg x 8 high-density, low-power static RAM module comprised of two 512K x 8 monolithicSRAM's, an advanced high-speed CM OS decoder and decoupling capacitors surface mounted on |
OCR Scan |
600-mil-wide 32-pin 30A143-00 27Sims 1431 T | |
1Mx8 bit Low Power CMOS Static RAM
Abstract: AN 7470 cmos static ram 1mx8 5v EDI8F81026C EDI8F81026C20M6C EDI8F81026C25M6C EDI8F81026C25M6I EDI8F81026C35M6C
|
Original |
EDI8F81026C EDI8F81026C 512Kx8 EDI8F81026C25M6C EDI8F81026C25M6I. 01581USA 1Mx8 bit Low Power CMOS Static RAM AN 7470 cmos static ram 1mx8 5v EDI8F81026C20M6C EDI8F81026C25M6I EDI8F81026C35M6C | |
Contextual Info: WED8F88092C White Electronic Designs 8MBX8 STATIC RAM CMOS, MODULE FEATURES DESCRIPTION • 8Mx8 bit CMOS Static ■ Random Access Memory ■ ■ Access Times 70 thru 100ns ■ Data Retention Function WED8F88092LP ■ TTL Compatible Inputs and Outputs ■ |
Original |
WED8F88092C 100ns WED8F88092LP WED8F88092C WED8F88092LP) WED8F88092C70BSC WED8F88092C85BSC WED8F88092C100BSC | |
Contextual Info: EDI8F81026C m lUegxS SRAM Module ELECIROMC DC9SN&NC. 1Megabitx 8 StaticRAM CMOS, Module with RevolutionaryPinout F e a tu re s 1 Meg x 8 bit CM OS Static The EDI8F81026C is an 8 Megabit CM OS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered |
OCR Scan |
EDI8F81026C EDI8F81026C 512Kx8 EDI8F81035M6C EDI8F81026C25M6C EEM8F81026C2SM6I. 36PinDuaHhtne 4WECOf74TO | |
TLV5590
Abstract: TLV5591 x2 texas instruments modem usr TLC8044 TMS320FLEX F240 MCK240 TMS320 TC236 sprb118
|
Original |
SSFN018 com/sc/9709 SCG40 TLV5590 TLV5591 x2 texas instruments modem usr TLC8044 TMS320FLEX F240 MCK240 TMS320 TC236 sprb118 | |
Contextual Info: 1M x 8 SRAM MODULE SYS81000FK - 020/025/35 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 001 858 674 2233, Fax No: (001) 858 674 2230 Issue 3.0 : February 2000 Description Features The SYS81000FK is a plastic 8Mbit Static RAM Module housed in a JEDEC standard 36 pin Dual |
Original |
SYS81000FK 165mW 512Kx8 | |
Contextual Info: 1Mx8, 20 - 45ns, STACK/DIP 30A129-12 B 8 Megabit High Speed CMOS SRAM DPS1MX8MKN3 DESCRIPTION: The DPS1MX8MKN3 High Speed SRAM ‘’STACK’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC mounted on a co-fired |
Original |
30A129-12 600-mil-wide, 32-pin | |
TLV5590
Abstract: TLV5591 scld003a TLC8044 ScansUX7 flatbed scanner controller MOSFET ACER F240 MCK240 TMS320
|
OCR Scan |
TMS320FLEX TLV5593 TLV5594 TLV5591 SLVS160) TMS320C24X TLC8044 SLAS128/158) TLV5590 scld003a ScansUX7 flatbed scanner controller MOSFET ACER F240 MCK240 TMS320 |