30A14 Search Results

DPS512E8MGG

Contextual Info: 512Kx8, 55 - 120ns, DLCC 30A142-00 B 4 Megabit CMOS SRAM DPS512E8MGG DESCRIPTION: The DPS512E8MGG is a monolithic 512K x 8 Static Random Access Memory SRAM fabricated using CMOS technology. It is designed for use in high density, low power applications. All pins are TTL

YLE relay

Abstract: AgSn02 YL-317 30A14VDC DC6V coil dc24v
Contextual Info: yl-317 YL-317 Electromechanical Relays with High Contact Load Contact Form: 1C/1A Contact Material: AgSn02 Rated Switching Current: 40A 14VDC 1A 30A14VDC(1C) Max.Switching Voltage: 75VDC Max switching current: 40A Rated switching power: 560W (1A) 420W(1C)

FWJ-30A14F

Abstract: FWJ-20A14F FWJ-25A14F
Contextual Info: Bussmann Ferrule 20-30A FWJ 1000V Electrical Characteristics I2t A2S Rated Current Clearing RMS-Amps Pre-arc at 1000V Size ® Ordering Information Watts Loss Part Number Carton Qty. Carton Weight (kg) 9 11 14 FWJ-20A14F FWJ-25A14F FWJ-30A14F 10 0.300

simm 72 pin socket

Contextual Info: 4Mx8/2Mx16/1Mx32, 15 - 35ns, ZIP/SIMM 30A147-00 E 32 Megabit CMOS SRAM DESCRIPTION: The DPS1MX32ML/DPS1MX32MW is a 1 Meg x 32 high density, high-speed Static Random Access Memory SRAM module, intended for high performance computers and digital signal processing

FWH-10A14F

Contextual Info: 2/13/01 10:50 AM Page 1 BIF Document Semiconductor Fuse 1-30A, 500 Volts 35785298 Size 14≈ 51 104 6 4 2 103 6 4 2 102 6 4 Virtual Pre-Arcing Time In Seconds 35785298* FWH-5A14F FWH-10A14F FWH-15A14F FWH-20A14F FWH-25A14F FWH-30A14F 2 101 6 4 2 100 6 4 2

DPS512C32MKV3

Contextual Info: 2Mx8/1Mx16/512Kx32, 20 - 45ns, PGA 30A141-02 D 16 Megabit High Speed CMOS SRAM DPS512C32MKV3 DESCRIPTION: The DPS512C32MKV3 ‘’VERSA-STACK’’ module is a revolutionary new high speed memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip

bussmann semiconductor fuse

Abstract: FWJ-30A14F FWJ20A FWJ-20A14F transistor a 1413 FWJ-25A14F
Contextual Info: BIF Document Semiconductor Fuse 20-30A, 1000 Volts 35785315 Size 14≈ 67 104 6 4 2 103 6 4 2 102 6 4 Virtual Pre-Arcing Time In Seconds 2 101 6 4 FWJ-20A14F FWJ-25A14F FWJ-30A14F 2 100 6 4 2 10–1 6 4 2 10–2 6 4 2 10–3 6 4 2 10–4 101 2 4 6 8 102 2

bussmann semiconductor fuse

Abstract: bussmann LE12 5TH transistor a 1413 bussmann 1A14F-30A14F
Contextual Info: BIF Document Semiconductor Fuse 1-30A, 250 Volts Pre-Arcing Time-Current Characteristic Curves FWX 1A14F-30A14F 1-17-01 SB00233 BUSSMANN P.O. Box 14460 St. Louis, MO 63178-4460 U.S.A. Phone: 636-394-2877 Fax: 800-544-2570 Int’l Fax: 636-527-1413 35785302

Contextual Info: 2Mx8/1Mx16/512Kx32, 17 - 25ns, ZIP/SIMM 30A148-00 D 16 Megabit CMOS SRAM DPS512X32ML/DPS512X32MW DESCRIPTION: The DPS512X32ML/DPS512X32MW is a 512K x 32 high density, high-speed Static Random Access Memory SRAM module, intended for high performance computers and digital signal processing

FWP-50A14F

Abstract: FWP25A14F FWP40A14F FWP-32A14F FWP-40A14F FWP20A14F FWP-30A fwp-30a14f FWP-5A14F FWP-10A14F
Contextual Info: BIF Document Semiconductor Fuse 1-50A, 700 Volts 35785307 Size 14≈51 104 6 4 2 103 6 4 2 FWP-25A14F FWP-30A14F FWP-32A14F FWP-40A14F FWP-50A14F 2 10 Virtual Pre-Arcing Time In Seconds 6 4 2 101 6 4 2 100 6 4 FWP-5A14F FWP-10A14F FWP-15A14F FWP-20A14F 2 10–1

cmos static ram 1mx8 5v

Contextual Info: 1Mx8, 55 - 150ns, DIP 30A143-00 C 8 Megabit CMOS SRAM DPS1MS8MP DESCRIPTION: The DPS1MS8MP is a 1Meg x 8 high-density, low-power static RAM module comprised of two 512K x 8 monolithic SRAM’s, an advanced high-speed CMOS decoder and decoupling capacitors surface mounted on

Contextual Info: DENSE-PAC 1024 Megabit CMOS DRAM MICROSYSTEMS DPD32MS32PW5 PRELIMINARY PIN-OUT DIAGRAM D ESC R IPT IO N : The DPD32MS32PW5 is the 32 Meg x 32 Dynamic RAM module in the family of Sup er SIMM modules that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of sixteen dynamic RAM stacks

Contextual Info: DENSE-PAC 16 Megabit CM OS SRAM MICROSYSTEMS DPS512X32ML/DPS512X32MW PRELIMINARY DESCRIPTION: PIN-OUT DIAGRAM The DPS512X32ML/DPS512X32MW is a 512K x 32 high density, high-speed Static Random Access Memory SRAM module, intended for high performance computers and digital signal processing

Contextual Info: D EN SE-PA C 8 Megabit CMOS SRAM M I C R O S Y S T E M S DPS1MS8MP DESCRIPTION: The D PS1M S8M P is a IM eg x 8 high-density, low-power static RAM module comprised of two 512K x 8 monolithicSRAM's,an advanced high-speed CMOS decoder and decouplingcapacitors surface mounted on

AL437

Abstract: L97c L235C L103T L41C L140C L94C l165c L239C L43C
Contextual Info: ORCA ORSPI4 Dual SPI4 Interface and High-Speed SERDES FPSC November 2003 Preliminary Data Sheet Lattice Semiconductor has developed a next-generation FPSC targeted at high-speed data transmission. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORSPI4 FPSC contains two

Contextual Info: DENSE-PAC MICROSYSTEMS 64 Megabit C M O S D R A M DPD16MX4PKY5 PRELIMINARY D E S C R IP T IO N : The DPD16M X4PKY5 is the 16 M eg x 4 Dynamic R A M module that utilize the new and innovative space saving 300m il T S O P stacking technology. The module is constructed of four 16 Meg x 1 Dynamic RAM's.

Contextual Info: DENSE-PAC MICROSYSTEMS 16 Megabit CMOS SRAM DPS512X32ML/DPS512X32MW PRELIMINARY DESCRIPTION: P IN -O U T D IA G R A M The DPS512X32ML/DPS512X32MW is a 512K x 32 high density, high-speed Static Random Access Memory SRAM module, intended for high performance computers and digital signal processing

Contextual Info: DENSE-PAC 8 Me8abit CMOSSRAM M I C R O S Y S T E M S D P S 1M S 8 M P PRELIM IN A RY DESCRIPTIO N: The DPS1MS8MP is a 1Meg x 8 high-density, low-power static RAM module comprised of two 512Kx8 monolithic SRAM's, an advanced high-speed CMOS decoder and decoupling capacitors surface

L130C

Abstract: L74c l31c l97c l65c A311TC l146c l48c L202C L235C
Contextual Info: ORCA ORSPI4 Dual SPI4 Interface and High-Speed SERDES FPSC May 2009 Data Sheet Lattice Semiconductor has developed a next-generation FPSC targeted at high-speed data transmission. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORSPI4 FPSC contains two

Contextual Info: D E N S E - P A 512 Megabit C M O S D R A M C M I C E OS Y S T EM S DPD16MS32PW5 PRELIMINARY DESCRIPTION: The DPD16MS32PW 5 is the 16 Meg x 32 Dynamic RAM module in the family of Super SIMM1*1 modules that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of eight dynamic RAM stacks surface

Contextual Info: 8 Megabit CMOS SRAM M I C R O S Y S T E MS DPS1MS8MP DESCRIPTION: The D PS1M S8M P is a 1Meg x 6 high-density, low-power static RAM module comprised of two 512K x 8 monolithic SRAM's, an advanced high-speed CMOS decoder and decoupling capacitors surface mounted on

Contextual Info: DENSE-PAC MICROSYSTEMS 4 Megabit CMOS SRAM DPS512E8MGG PRELIMINARY D ESCRIPTIO N : The DPS512E8M CC is a monolithic 512K x 8 Static Random Access Memory SRAM fabricated using CMOS technology. It is designed for use in high density, low power applications. All pins are TTL

DPS512C32MKV3

Contextual Info: D E N S E -P A C 16 Megabit High Speed CMOS SRAM MICROSYSTEMS DPS512C32MKV3 D E S C R IP T IO N : T h e D P S 5 1 2 C 3 2 M K V 3 " V E R S A -S T A C K ” m odule is a revolutionary new high speed m em ory subsystem using Dense-P ac Microsystems' ceram ic Stackable Lead less Chip

asus motherboard circuit diagram

Abstract: SuperSpeed USB 3.0 to Serial ATA Bridge P1263 intel MOTHERBOARD SERVICE MANUAL
Contextual Info: Intel Atom Processor E3800 Product Family Datasheet October 2013 Revision 1.0 Reference Number: 538136 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS